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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗
NASA NTRS1980

Automated array assembly task development of low-cost polysilicon solar cells

Development of low cost, large area polysilicon solar cells was conducted in this program. Three types of polysilicon materialk were investigated. A theoretical and experimenal comparison between single crystal silicon and polysilicon solar cell efficiency was performed. Significant electrical performance differences were observed between types of wafer material, i.e. fine grain and coarse grain polysilicon and single crystal silicon. Efficiency degradation due to grain boundaries in fin grain and coarse grain polysilicon was shown to be small. It was demonstrated that 10 percent efficient polysilicon solar cells can be produced with spray on n+ dopants. This result fulfills an important goal of this project, which is the production of batch quantity of 10 percent efficient polysilicon solar cells.

Jones, G. T.↗
NASA NTRS1980

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Wang, K. L.↗
NASA NTRS1980

Radiation tolerance of vertical junction solar cells

Extensive radiation testing of vertical junction (VJ) solar cells demonstrated a radiation tolerance better than both planar silicon cells and at least one type of (AlGa)As-GaAs cell. Due to tradeoffs between short circuit current and open circuit voltage, the end of life (10 to the 16th power 1 MeV electrons/sq cm) maximum power point is nearly independent of bulk resistivity between 2 and 10 ohm cm, increases slightly with increasing wafer thickness between 3 and 11 mils, and increases slightly with increasing groove depth between 1 and 3 mils.

Schelnine, A.↗
NASA NTRS1979

A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.

Trotter, J. D.↗
NASA NTRS1978

The 31.4 GHz parametric amplifier

A degenerate parametric amplifier for 31.4 GHz was studied, designed and constructed. Good mechanical stability and a wide bandwidth of about 800 MHz were achieved using Schottky barrier varactors mounted in specially designed Sharpless wafers and a fixed tuned amplifier mount.

Edrich, J.↗
NASA NTRS1979

Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

Knobloch, J.↗
NASA NTRS1980

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

Pryor, R. A.↗
NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗
NASA NTRS1981

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

Hopkins, R. H.↗
NASA NTRS1981

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗
NASA NTRS1981

High-current, fast-switching transistor development

The design, wafer-processing techniques, and various measurements which include forward safe operating area, dc characteristics, and switching times are described for a larger-diameter (33) transistor. An improved base contact for equalizing the base-emitter voltage at high currents was developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design.

Hower, P. L.↗
NASA NTRS1981

Evaluation and verification of epitaxial process sequence for silicon solar cell production

The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

Redfield, D.↗
NASA NTRS1980

A silicon sheet casting experiment

The casting of silicon blanks for solar cells directly without slicing is an exciting concept. An experiment was performed to investigate the feasibility of developing a machine that casts wafers directly. A Czochralski furnace was modified to accept a graphite ingot-simulating fixture. Silicon was melted in the middle of the ingot simulator in a boron nitride mold. Sample castings showed reasonable crystal size. Solar cells were made from the cast blanks. The performance is reported.

Bickler, D. B.↗
NASA NTRS1981

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗
NASA NTRS1980

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗
NASA NTRS1983

Etching Integrated Circuits

20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

Kennedy, B. W.↗
NASA NTRS1983

Vacuum Ampoule Isolates Corrosive Materials

Quartz vacuum ampoule confines corrosive sample wafer between two quartz plugs inserted in quartz tube. One quartz plug is window for measuring sample thermodynamic properties while laser pulse entering other quartz plug heats sample to molten state. Confinement of sample in vacuum prevents contamination of measurement system by hot corrosive vapors and any interference by preferential evaporation of melt.

Crouch, R. K.↗