SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Brazing process uses vapor-deposited titanium and an aluminum-zirconium-silicon alloy to prevent formation of brittle intermetallic compounds in stainless steel and aluminum bonding. Joints formed by this process maintain their high strength, corrosion resistance, and hermetic sealing properties.
Fe-Si electric steel is the most widely used soft magnetic materials in electric mahines and motors, transformers and generators. Improving the surperior magnetic and electric properties of 6.5 wt.% high silicon steel is essential for higher may improve energy efficiency and power density of electric machines. However, the brittleness due to the formation of B2 and D03 ordered phases in high silicon steel make it difficult forbids for the application of high silicon steel. It is known that these ordered phases can be fully or partially suppressed by rapid cooling. However, further study is needed to understand the extend of cooling on the magnetic and mechanical properties of 6.5 wt.% silicon steel with various degree of ordering. By tuning the wheel speed from 1m/s to 30m/s with several intervals of the melt spinning process, varying degrees of cooling were achieved on 6.5 wt.% silicon steel ribbons. The cooling rate significant altered the ordering, microstructure size scale, and thus the mechanical and magnetic properties. TEM results showed that D03 ordering can be fully suppressed at high wheel speed, but started to nucleate at 5m/s and below, which correlates with the hardness and Young’s modulus increase towards low wheel speeds as tested by micro and nano indentation. The grain sizes of the ribbons on the wheel side decreased with increasing wheel speeds being ~100 micron at 1m/s and ~8 micron at 30m/s, which led to the change in coercivity. Saturation magnetization and electric resistivity of the ribbons remained about 190 emu/g and 84 microhm *cm, which appeared to be mainly depend on the chemistry.
This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.
Perovskite (PVSK) solar cells offer significant benefits over conventional silicon cells including low-cost solution processibility, minimal materials usage related to strong photon absorption in thin-film cell architectures, and a tunable bandgap. However, PVSK films are mechanically fragile, and fracture of PVSK layers and adjacent interfaces are a significant concern during fabrication, encapsulation, and operation. Herein, a thin-film mechanics fracture analysis tailored for p–i–n and n–i–p PVSK solar cells on both soda lime glass and polyimide substrates fabricated with three PVSK crystallization methods is presented. Here, the role of thermal processing of each cell layer is explored to determine the maximum allowable temperature below which fracture is inhibited. In the analysis, the mechanics basis for processing and materials selection guidelines for preventing fracture in PVSK solar cells is provided.
Impurity levels were measured in cerium oxide microspheres fabricated by modified internal gelation sol-gel methods. A combination of glow discharge mass spectrometry, electron impact mass spectrometry, combustion gas analysis and instrumental gas analysis were used to assess a wide range of potential elemental impurities. Low concentrations of carbon, nitrogen, and hydrogen impurities in microspheres showed a dependence on how microspheres were washed. Silicon impurities are believed to derive from silicone oil used during sol-gel processing. Spheres washed by the preferred approach had impurity levels below 100 ppm for all elements tested. For applications such as nuclear fuels, sol-gel methods could meet purity specifications as long as metal nitrate feed solutions of sufficient purity are used and microspheres are washed appropriately. In this study, cerium was used as a surrogate for plutonium-238, which is used in radioisotope power systems as a heat source, to determine whether carbon or other impurities were concentrated during internal gelation processing and remained after heat treatments. Analyses indicated low concentrations of impurities in cerium oxide microspheres after sintering steps that were well below documented limits for plutonium-238 oxide fuels. Modified washing methods, combined with a pressurized water treatment, resulted in sintered cerium oxide sol-gel microspheres with low impurity levels.
The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H{sub 2}-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.
Not Available
Undoped (B 4 C), B rich (B 5.5 C), and B/Si co-doped (Si-B 6.5 C) boron carbides were annealed at 500 °C for up to 21 days to investigate the thermal stability of primary dopants, B and Si. Structural changes associated with dedoping were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stable phase B 4 C showed no microstructural or lattice parameter changes. Similarly, lattice parameters of B 5.5 C remained constant, suggesting that B dopant is stable at the given conditions. However, the shortened lattice parameters and reduced Si content of Si-B 6.5 C over the annealing time indicated that Si dopant was in a metastable state at the annealing temperature. Consequently, Si dedoping led to an increase in amorphization (a loss of local crystalline order) which degrades the ballistic performance of boron carbide. The insight highlights the importance of Si dopant in boron carbide and suggests that rapid processing may be necessary to retain more silicon for better performance.
Limited Z-axis bandwidth of piezotube scanners used in conventional Scanning Tunneling Microscopes (STMs) has been a major limiting factor in achieving high scan speeds in STM applications. Slow Z-axis dynamics of typical piezotube scanners combined with the weight of the STM tip/tip holder assembly, that the scanner has to carry, substantially limit the achievable Z-axis bandwidth in both imaging and lithography modes. To tackle this issue, we introduce a high bandwidth microelectromechanical-system-based nanopositioner to be integrated into an existing STM scanner. The device is designed to replace the STM tip and fine Z-positioning mechanisms in the conventional STM setup, while providing an order of magnitude higher bandwidth in Z axis. The device is microfabricated using double silicon-on-isolator technology, and standard cleanroom processes. Experiments show that tunneling current between the device tip and a highly ordered pyrolytic graphite sample can be successfully established and maintained in air using the proposed device in a feedback loop. Results suggest that the proposed device uniquely combines a very high resolution and a large stroke with a substantially larger Z-axis bandwidth compared to that of conventional STM piezotube scanners, enabling higher scanning speeds in STM operations.
This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.
Buildings consume approximately 35% of the electricity used in the U.S. and building owners can significantly reduce this energy use by providing services like heating, electrical power and lighting only when people are present. The ARPAe funded program titled “INTEGRATED SPATIAL, SPECTRAL, & TEMPORAL OPTICAL REFLECTANCE SYSTEM FOR PRECISION OCCUPANCY & LOCATION SENSING TO IMPROVE BUILDING ENERGY EFFICIENCY” demonstrates how a low cost sensor technology developed for measuring distances can be used to count and locate occupants with a high degree of precision with a very low error rates. This platform tells a building control system where occupants are located (but not who they are) so that energy consuming services can be provided only when the services are needed by building occupants. The original proof of concept involved using low cost, commercially available time-of-flight (TOF) sensors that measure distance, but the performance of these existing sensors was lacking, as they could not operate properly in the presence of sunlight, which blinded the simple TOF sensors and limited their utility in buildings. This project proposed a powerful new class of TOF sensors that used state-of-the-art integrated circuit (IC) fabrication processes that combined advanced photonics with conventional silicon chip circuitry for improved sensor performance. An equally important part of this project was to find ways to maximize occupant count and location accuracy while using the fewest number of sensors possible, in order to keep costs low. By using building blueprints to create digital twins of commercial building spaces, the team developed new algorithms to maximize occupant count and tracking accuracy by properly locating the minimum number of sensors at just the right spots in the building. This capability not only minimizes system costs but also simplified sensor installation and system commissioning. Our simulations of our sensor networks for a range of commercial floorplan designs demonstrated that our installed cost target of $0.08/sqft was attainable, though not fully demonstrated during the project. Finally, we noted that the TOF sensor concept could provide a valuable role in health and eldercare by tracking patients without the need for worn sensors and would be useful for fall detection and other patient safety metrics, including tracking healthcare/patient interactions. We feel that, when fully developed, this new class of sophisticated TOF sensors and support software will be a powerful new approach to improving building energy efficiency based on occupant centric control platforms and will also open new levels of patient safety in healthcare operations. To realize this potential, the team formed the Troy Sensor Company LLC to oversee licensing of the programs patents and continue to seek commercialization of this program’s activity sensing technologies.
Casting process development for ternary magnesium- lithium-silicon alloy
Growth of silicon dioxide on a silicon carbide crystal ensures proper orientation of photoresist masks on the crystals used for semiconductor devices. The crystal is heated in a water vapor-saturated gas to delineate p-n junctions that intersect the crystal surface.
The feasibility of making an adherent and moisture degradation resistant silver-only front contact to silicon solar cells was demonstrated. Optimum fabrication processes and process sequences were determined for making such contacts. These contacts were found to also have good electrical characteristics. A back contact of aluminum-silver was also developed. This proved very satisfactory for low-temperature applications.
An investigation was conducted to explore the possibility of using Sirtl etch as a nondestructive evaluation step for categorizing silicon wafers before device fabrication is begun. It is known that chromium is deposited as a residue during the chemical reaction associated with etching silicon in Sirtl etch. There has been concern that the use of Sirtl etch could result in the diffusion of chromium into the silicon slice during subsequent high-temperature processing steps. The investigation revealed, however, that residual chromium resides only on the surface of the slice and can easily be removed.
An investigation was conducted to determine the technology readiness of lithium-doped silicon solar cells with respect to use in space programs. A pilot line fabrication program was established, in which the pilot line cells were evaluated after being exposed to environments ordinarily imposed on nonlithium-doped silicon solar cells. Results indicate that further process improvements are required, particularly with respect to the P/N junction diffusion and the electrical contacting technique (including solder coating). It is concluded that lithium-doped cells can be fabricated to exhibit (1) high efficiencies, (2) uniform cell-to-cell recovery characteristics after exposure to 1-MeV electrons; and (3) good stability in most environments investigated (the only exception being the thermal shock environment).
Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.
Imaging system uses charge-coupled devices (CCD's) to generate TV-like pictures with high resolution, sensitivity, and signal-to-noise ratio. It combines detectors for five spectral bands as well as processing and control circuitry all on single silicon chip.