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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Diamond surface functionalization via visible light–driven C–H activation for nanoscale quantum sensing

Nitrogen-vacancy (NV) centers in diamond are a promising platform for nanoscale NMR sensing. Despite significant progress toward using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. Such sensing requires that target molecules are immobilized within nanometers of NV centers with long spin coherence. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C–H bonds on single-crystal diamond surfaces under ambient conditions using visible light, forming C–F, C–Cl, C–S, and C–N bonds at the surface. This method is compatible with NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof-of-principle demonstration, we use shallow ensembles of NV centers to detect nuclear spins from surface-bound functional groups. Our approach to surface functionalization opens the door to deploying NV centers as a tool for chemical sensing and single-molecule spectroscopy.

Science & Technology - Other Topics↗
DOE OSTI2021

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi 2 Te 4

The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi 2 Te 4 , a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish oneto-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi 2 Te 4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi 2 Te 4

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature T N , though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (E g,ex ) and its spatial fluctuation in the QAH insulator 5-layer MnBi 2 Te 4 . Long-range fluctuations of E g,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores E g,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

3D superconducting radio-frequency resonators for quantum computing

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. In this presentation, I will review the current technology and progress towards the three dimensional SRF cavities to enhance the coherence time.

Dhakal, Pashupati↗
DOE OSTI2026

Potential Applications of Quantum Computing at Los Alamos National Laboratory, v0.3.0

Since the scientific revolution in the 16th and 17th centuries, the process of scientific discovery has followed an iterative feedback process of observation, hypothesis development and testing with physical experiments, which is widely referred to as the scientific method. This process remained largely unchanged until the middle of the 20th century, when the emergence of digital computers empowered scientist to build and inspect detailed simulations of physical phenomena. Over the last century, computational tools have transformed modern approaches to scientific discovery by enabling fast and affordable hypothesis testing before physical experiments are conducted, shown in Figure 1-1. Some notable examples include: global climate forecasts to understand how the environment may change over decades [130]; modeling the behavior of plasma to design fusion reactors [59]; and understanding the behavior of molecules in biological processes [161, 223].

36 MATERIALS SCIENCE↗
DOE OSTI2024

Near-Field Nanoimaging of Colloidal Transition Metal Dichalcogenide Waveguides

Bulk transition metal dichalcogenide (TMDC) nanostructures are regarded as promising material candidates for integrated photonics due to their high refractive index at the near-infrared wavelengths. Here in this work, colloidal TMDC waveguides with tailorable dimensions are prepared by a scalable synthetic approach. The optical waveguiding properties of colloidal nanowires are studied by the near-field nanoimaging technique. In addition to dependence on thickness and wavelength, the excitonic responses and resultant waveguide modes in TMDC nanowires can be modulated by the environmental temperature. With the high-throughput production and tunable optical properties, colloidal TMDC nanowires highlight the potential for active optical components and integrated photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlled n –Doping of Naphthalene Diimide–Based Two–Dimensional Polymers

Two-dimensional polymers (2DPs) are promising as structurally well-defined, permanently porous, organic semiconductors. However, 2DPs are nearly always isolated as closed shell organic species with limited charge carriers, which leads to low bulk conductivities. Here, we enhance the bulk conductivity of two naphthalene diimide (NDI)-containing 2DP semiconductors by controllably n-doping the NDI units using cobaltocene (CoCp 2 ). Optical and transient microwave spectroscopy reveals that both as-prepared NDI-containing 2DPs are semiconducting with sub-2 eV optical bandgaps and photoexcited charge-carrier lifetimes of tens of nanoseconds. Following reduction with CoCp 2 , both 2DPs largely retain their periodic structures and exhibit optical and electron-spin resonance spectroscopic features consistent with the presence of NDI-radical anions. Here, while the native NDI-based 2DPs are electronically insulating, maximum bulk conductivities of >10 –4 S cm –1 are achieved by substoichiometric levels of n-doping. Density functional theory calculations show that the strongest electronic couplings in these 2DPs exist in the out-of-plane (π-stacking) crystallographic directions, which indicates that cross-plane electronic transport through NDI stacks is primarily responsible for the observed electronic conductivity. Taken together, this study underlines that controlled molecular doping is a useful approach to access structurally well-defined, paramagnetic, 2DP n-type semiconductors with measurable bulk electronic conductivities of interest for electronic or spintronic devices.

2D polymers↗
DOE OSTI2022

Transition Metal Carbo-Chalcogenide “TMCC:” A New Family of 2D Materials

A new family of 2D transition metal carbo-chalcogenides (TMCCs) is reported, which can be considered a combination of two well-known families, TM carbides (MXenes) and TM dichalcogenides (TMDCs), at the atomic level. Single sheets are successfully obtained from multilayered Nb 2 S 2 C and Ta 2 S 2 C using electrochemical lithiation followed by sonication in water. The parent multilayered TMCCs are synthesized using a simple, scalable solid-state synthesis followed by a topochemical reaction. Superconductivity transition is observed at 7.55 K for Nb 2 S 2 C. The delaminated Nb 2 S 2 C outperforms both multilayered Nb 2 S 2 C and delaminated NbS 2 as an electrode material for Li-ion batteries. Ab initio calculations predict the elastic constant of TMCC to be over 50% higher than that of TMDC.

superconductors↗
DOE OSTI2022

Three‐Tier Hierarchical Structures for Extreme Pool Boiling Heat Transfer Performance

Abstract Boiling is an effective energy‐transfer process with substantial utility in energy applications. Boiling performance is described mainly by the heat‐transfer coefficient (HTC) and critical heat flux (CHF). Recent efforts for the simultaneous enhancement of HTC and CHF have been limited by an intrinsic trade‐off between them—HTC enhancement requires high nucleation‐site density, which can increase bubble coalescence resulting in limited CHF enhancement. In this work, this trade‐off is overcome by designing three‐tier hierarchical structures. The bubble coalescence is minimized to enhance the CHF by defining nucleation sites with microcavities interspersed within hemi‐wicking structures. Meanwhile, the reduced nucleation‐site density is compensated for by incorporating nanostructures that promote evaporation for HTC enhancement. The hierarchical structures demonstrate the simultaneous enhancement of HTC and CHF up to 389% and 138%, respectively, compared to a smooth surface. This extreme boiling performance can lead to significant energy savings in a variety of boiling applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Gas Separations using Nanoporous Atomically Thin Membranes: Recent Theoretical, Simulation, and Experimental Advances

Abstract Porous graphene and other atomically thin 2D materials are regarded as highly promising membrane materials for high‐performance gas separations due to their atomic thickness, large‐scale synthesizability, excellent mechanical strength, and chemical stability. When these atomically thin materials contain a high areal density of gas‐sieving nanoscale pores, they can exhibit both high gas permeances and high selectivities, which is beneficial for reducing the cost of gas‐separation processes. Here, recent modeling and experimental advances in nanoporous atomically thin membranes for gas separations is discussed. The major challenges involved, including controlling pore size distributions, scaling up the membrane area, and matching theory with experimental results, are also highlighted. Finally, important future directions are proposed for real gas‐separation applications of nanoporous atomically thin membranes.

2D materials↗
DOE OSTI2022

Fabrication of Arrays of Topological Solitons in Patterned Chiral Liquid Crystals for Real-Time Observation of Morphogenesis

Topological solitons have knotted continuous field configurations embedded in a uniform background, and occur in cosmology, biology, and electromagnetism. However, real-time observation of their morphogenesis and dynamics is still challenging because their size and timescale are enormously large or tiny. Liquid crystal (LC) structures are promising candidates for a model-system to study the morphogenesis of topological solitons, enabling direct visualization due to the proper size and timescale. We report a new way is found to rationalize the real-time observation of the generation and transformation of topological solitons using cholesteric LCs confined in patterned substrates. The experimental demonstration shows the topologically protected structures arise via the transformation of topological defects. Numerical modeling based on minimization of free energy closely reconstructs the experimental findings. The fundamental insights obtained from the direct observations pose new theoretical challenges in understanding the morphogenesis of different types of topological solitons within a broad range of scales.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe 2 –SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe 2 is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi Ag charged antisite defects in cubic AgBiSe 2 which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe 2 alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe 3 , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Abstract With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p‐type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P‐containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p‐type BP (5 × 10 20 cm −3 ) is achieved using C doping under B‐rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The Magneto-Transport Properties of Cr 1/3 TaS 2 with Chiral Magnetic Solitons

Cr 1/3 TaS 2 —a candidate of chiral magnet—has been reported as a trivial ferromagnetic material. In contrast, the Cr 1/3 TaS 2 single crystals exhibit a chiral helimagnetic (CHM) transition near 140 K. The magnetic moment versus magnetic field curves reveal a CHM—chiral soliton lattice (CSL)—forced ferromagnetic (FFM) transition in the magnetic ordered state. The conducting electrons interact with the CHM and CSL orders, giving rise to the nontrivial magnetoresistance (MR) in the Cr 1/3 TaS 2 single crystals. The normalized magnetic moment and normalized MR fit well with the analytical functions for chiral soliton density. The magnetic phase diagrams constructed from the magnetic moment data and MR data suggest a possible tri-critical point. Compared with the isostructural Cr 1/3 NbS 2 , the CHM transition temperature of Cr 1/3 TaS 2 is 13 K higher, the CSL—FFM transition field is about 10 times larger, and the Dzyaloshinskii-Moriya interaction strength is 3 times bigger. The latter two likely originate from the strong spin-orbit coupling (SOC) of Cr 1/3 TaS 2 . This work clarifies that high-quality Cr 1/3 TaS 2 single crystals are chiral magnets and Cr 1/3 (Nb,Ta)S 2 could serve as an intriguing platform for the flexible engineering of chiral magnetic solitons with tunable SOC.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Asymmetric Character of the Ferroelectric Phase Transition and Charged Domain Walls in a Hybrid Improper Ferroelectric

Abstract In improper ferroelectrics, the spontaneous ordering is typically driven by a structural distortion or a magnetic spin alignment. The induced electric polarization is only a secondary effect. This dependence is a rich source for unusual phenomena and ferroelectric domain configurations for proper, polarization‐driven ferroelectrics. This study focuses on the polar domain structure and the hysteretic behavior at the ferroelectric phase transition in Ca 3 Mn 1.9 Ti 0.1 O 7 as a representative of the recently discovered hybrid improper ferroelectric class of multiferroics. Combining optical second harmonic generation and Raman spectroscopy gives access to the spontaneous structural distortion and the resulting improper electric polarization. This study shows that hybrid improper ferroelectrics contrast proper and improper ferroelectrics in several ways. Most intriguingly, adjacent ferroelectric domains favor head‐to‐head and tail‐to‐tail domain walls over charge‐neutral configurations. Furthermore, the phase transition occurs in an asymmetric fashion. The regime of phase coexistence of the nonpolar and polar phases shows a clear and abrupt upper temperature limit. In contrast, the coexistence toward low temperatures is best described as a fade‐out process, where 100‐nm‐sized islands of the nonpolar phase expand deep into the polar phase.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantifying Polaron Mole Fractions and Interpreting Spectral Changes in Molecularly Doped Conjugated Polymers

Molecular doping of conjugated polymers causes bleaching of the neutral absorbance and results in new polaron absorbance transitions in the mid and near infrared. In this report the concentration dependent changes in the spectra for a series of molecularly doped diketopyrrolopyrrole (DPP) co-polymers with a series of ultra-high electron affinity cyanotrimethylenecyclopropane-based dopants is analyzed. With these strong dopants the polaron mole fraction (Θ) reaches saturation. Analysis of the full spectrum enables separation of neutral and polaron signals and quantification of the polaron mole fraction using a simple noninteracting site model. The peak ratios for both neutral and polaron peaks change systematically with increasing polaron mole fraction for all measured polymers. Analysis of the spectral changes indicates that the polaron mole fraction can be quantified to within 5%. While the total change in the absorbance spectrum with increasing polaron mole fraction is linear, the lowest energy polaron peak (P1) grows nonlinearly, which indicates increased polarization/delocalization. Molecular doping of polymers that form either H- or J-aggregates shows systematically different spectral changes in the vibronic peak ratios of the neutral spectra and provides insights into the polymer configuration at undoped sites in the film.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Modeling of transport in carrier-selective contacts in silicon heterojunction solar cells

High-performance silicon heterojunction (SHJ) solar cells use carrier-selective contact structures based on hydrogentated amorphous Si (a-Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ cells require that the carrier-selective contacts provide selectivity and passivation. However, a microscopic understanding of the dynamics of carrier transport through the a-Si layer is currently lacking. In this paper, we explicitly simulate the transport of holes across the a-Si:H(i) layer using a novel kinetic Monte Carlo approach. The hole-selective contact structure investigated in this paper uses p-type doped a-Si:H(p) and intrinsic a-Si:H(i) on an n-type crystalline silicon wafer, where the selectivity is provided by the a-Si:H(p) and the passivation is provided by the a-Si:H(i). However, in addition to the passivation provided by the a-Si:H(i), this layer also creates a potential barrier to the collection of photogenerated holes. There have been experimental studies in the literature that have suggested that multi-phonon processes are the main transport mechanism that assists in the transport of holes across the intrinsic a-Si:H barrier. Simulations presented here show that multi-phonon injection of holes into the a-Si:H(i) layer is the rate limiting step for transport across the a-Si:H(i) layer. Our results indicate that multi-phonon transport is strongly dependent on the electric field at the a-Si:H(i)/c-Si heterointerface as well. Transport simulations presented in this paper are consistent with experimental findings that multi-phonon processes limit transport across the a-Si:H(i) layer and are responsible for photocurrent suppression at the a-Si:H(i)/c-Si heterointerface when these processes are slower than the associated incident hole flux due to photo-excitation.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗