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The mechanisms of scale cracking, scale color changes, and scale growth, and their interrelations, were studied in zirconium specimens at elevated temperatures in air, oxygen and nitrogen. Nitrogen was found to be responsible for monoclinic-to-cubic ZrO2 conversion, for scale cracking and breakaway on zirconium nitride, and for the formation of ZrN on the metal interface underneath an outer oxide layer.
The preparation of composites in space depends on the immersion of reinforcements in a liquid-metal matrix and their uniform, stable dispersion in the bulk products until solidification occurs. The chief problem in achieving the composite is associated with the 'wetting' of the reinforcements. A study of the theory of wetting revealed that wetting is prevented by the presence of gaseous and oxide contaminants at the interface between the pure liquid and pure solid. Experiment then confirmed that the use of a vacuum environment, cleaning of all surfaces, elevated temperature, ion bombardment, and vigorous mechanical agitation enabled the immersion and dispersion of candidate reinforcements. The technique is limited by the increased tendency for reaction if the time at elevated temperature is extended.
Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.
A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.
SiCSiC (silicon carbide fiber reinforced silicon carbide) composites are candidate materials for various turbine engine applications because of their high specific strength and good creep and oxidation resistance at elevated temperatures. This study was performed to characterize the microstructure of a melt infiltrated (MI) SiCSiC, and to examine environmental degradation mechanisms occurring in precracked MI SiCSiC CMC specimens under tensile stresses of 30 ksi or less at 815C in dry air or argon. In addition, the oxidation of the BN interface was characterized at815C, and crack opening displacement as a function of stress measurements were made. This material characterization is being performed to obtain data to support NASA GRC modeling of SiCSiC environmental degradation. The comparison of experimentally-observed phenomena with model predictions can lead to improved understanding of material degradation mechanisms.
Oxides and their tailored structures are at the heart of electrochemical energy storage technologies and advances in understanding and controlling the dynamic behaviors in the complex oxides, particularly at the interfaces, during electrochemical processes will catalyze creative design concepts for new materials with enhanced and better-understood properties. Such knowledge is not accessible without new analytical tools. New innovative experimental techniques are needed for understanding the chemistry and structure of the bulk and interfaces, more importantly how they change with electrochemical processes in situ. Analytical Transmission Electron Microscopy (TEM) is used extensively to study electrode materials ex situ and is one of the most powerful tools to obtain structural, morphological, and compositional information at nanometer scale by combining imaging, diffraction and spectroscopy, e.g., EDS (energy dispersive X-ray spectrometry) and Electron Energy Loss Spectrometry (EELS). Determining the composition/structure evolution upon electrochemical cycling at the bulk and interfaces can be addressed by new electron microscopy technique with which one can observe, at the nanometer scale and in situ, the dynamic phenomena in the electrode materials. In electrochemical systems, for instance in a lithium ion battery (LIB), materials operate under conditions that are far from equilibrium, so that the materials studied ex situ may not capture the processes that occur in situ in a working battery. In situ electrochemical operation in the ultra-high vacuum column of a TEM has been pursued by two major strategies. In one strategy, a 'nano-battery' can be fabricated from an all-solid-state thin film battery using a focused ion beam (FIB). The electrolyte is either polymer based or ceramic based without any liquid component. As shown in Fig. 1a, the interfaces between the active electrode material/electrolyte can be clearly observed with TEM imaging, in contrast to the composite electrodes/electrolyte interfaces in conventional lithium ion batteries, depicted in Fig.1b, where quantitative interface characterization is extremely difficult if not impossible. A second strategy involves organic electrolyte, though this approach more closely resembles the actual operation conditions of a LIB, the extreme volatility In Situ Analytical Electron Microscopy for Probing Nanoscale Electrochemistry by Ying Shirley Meng, Thomas McGilvray, Ming-Che Yang, Danijel Gostovic, Feng Wang, Dongli Zeng, Yimei Zhu, and Jason Graetz of the organic electrolytes present significant challenges for designing an in situ cell that is suitable for the vacuum environment of the TEM. Significant progress has been made in the past few years on the development of in situ electron microscopy for probing nanoscale electrochemistry. In 2008, Brazier et al. reported the first cross-section observation of an all solid-state lithium ion nano-battery by TEM. In this study the FIB was used to make a 'nano-battery,' from an all solid-state battery prepared by pulsed laser deposition (PLD). In situ TEM observations were not possible at that time due to several key challenges such as the lack of a suitable biasing sample holder and vacuum transfer of sample. In 2010, Yamamoto et al. successfully observed changes of electric potential in an all-solid-state lithium ion battery in situ with electron holography (EH). The 2D potential distribution resulting from movement of lithium ions near the positive-electrode/electrolyte interface was quantified. More recently Huang et al. and Wang et al. reported the in situ observations of the electrochemical lithiation of a single SnO{sub 2} nanowire electrode in two different in situ setups. In their approach, a vacuum compatible ionic liquid is used as the electrolyte, eliminating the need for complicated membrane sealing to prevent the evaporation of carbonate based organic electrolyte into the TEM column. One main limitation of this approach is that EELS spectral imaging is not possible due to the high plasmon signal of the ionic liquid. To this end, we have developed a novel in situ instrumental system combining analytical electron microscopy with advanced spectroscopy to probe the dynamic phenomena in an all solid-state nano-battery. In situ electron microscopy is a versatile technique that yields insights into challenging questions that could not be obtained using other techniques. However, in order to fully exploit the capabilities, a very carefully thought-out plan of action is essential. It is important to recognize that this is not just a simple characterization tool, but a collection of tools that make up a complete experimental set-up: the choice of FIB operation conditions, specimen holder for biasing, grid materials and design as well as microscope environment must be thoroughly considered before performing an experiment.
The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlW.sub.xF.sub.y) improves the electrochemical stability of LiCoO.sub.2. AlW.sub.xF.sub.y thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlW.sub.xF.sub.y coatings (<10 .ANG.) on LiCoO.sub.2 significantly enhance stability relative to bare LiCoO.sub.2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlW.sub.xF.sub.y coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.
The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 Å) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.
The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO 2 . AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 Å) on LiCoO 2 significantly enhance stability relative to bare LiCoO 2 when cycled to 4.4 V. The coated LiCoO 2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.
Cation segregation occurring near the surface or interfaces of solid catalysts plays an important role in catalytic reactions. Unfortunately, the native surface of perovskite oxides is dominated by passivated A-site segregation, which severely hampers the catalytic activity and durability of the system. To address this issue, we present a wet exsolution method to reconstruct surface segregation in perovskite cobalt oxide. Here, under reduction etching treatment of glycol solution, inert surface Sr segregation was transformed into active Co 3 O 4 segregation. By varying the reaction time, we achieved differing coverage of the active Co 3 O 4 segregation on the La 0.5 Sr 0.5 CoO 3-δ (LSCO) perovskite oxide surface. This study reveals that CO oxidation activity exhibits a volcano-shaped dependence on the coverage of Co 3 O 4 segregation at the surface of a perovskite cobalt oxide. Furthermore, we find that a suitable coverage of Co 3 O 4 segregation can dramatically improve the catalytic activity of the perovskite catalyst by enhancing interface interactions. Co K-edge, Co L-edge, and O K-edge X-ray absorption spectra confirm that the synergistic effect optimizes the covalence of the metal-oxygen bond at the surface and interface. This work not only contributes to the design of perovskite-type catalysts, but also provides important insight into the relationship between surface segregation and catalytic activity.
Catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. Our paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixture of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.
The interface roughness, Boron distribution in bulk CoFeB and at interface, Gilbert damping constant (α), and inhomogeneous broadening in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures are found to be sensitive to the MgO growth process. The ion-assist and reactive growth processes that result in sharper interfaces of width ∼0.5 nm lead to smaller α of 0.0050 ± 0.0003 and 0.0060 ± 0.0002 and inhomogeneous broadening ΔH{sub 0} of 3 ± 0.3 and 1 ± 0.3 Oe, respectively. On the other hand, the post-oxidation method results in rough interface and higher retention of Boron in CoFeB leading to higher values for α and ΔH{sub 0} as 0.0080 ± 0.0006 and 5 ± 0.3 Oe, respectively.
Atomic emission spectroelectrochemistry (AESEC) combined with linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) provided insights on both active and passive dissolution of Ni-Fe-Cr-Mn-Co multi-principal element alloy. Elemental dissolution rates measured by AESEC during open circuit experiment were in agreement with those extrapolated from AESEC-LSV and indicated element-specific dissolution tendencies. AESEC-EIS at open circuit potential showed nearly in-phase elemental dissolution during potential modulation which suggests direct dissolution from the alloy surface to the electrolyte. In the passive potential domain, no oscillation of the elemental dissolution rate was detected by AESEC-EIS, suggesting non-oxidative chemical dissolution of the outer layer of the passive film. In this case, dissolution at the passive film/electrolyte interface was equal to the metal oxidation rate (passive current density) at the metal/passive film interface and the passive current density was independent of potential.
The objective of this work is to develop a better understanding of the interactions between battery components that drive the observed battery performance. Using computational tools at the atomistic level, we elucidate molecular, crystal, and amorphous structures, interfacial structures and reactions, and electrochemical behavior. We focus on Li metal anodes, liquid electrolytes, solid electrolytes, S cathodes, and metal-oxide cathodes, and their corresponding interfaces. Within liquid electrolytes, we study their bulk structure and dynamics, as a function of salt concentration. The analysis allows to understand the formation of localized high concentrated regions as the solvent is substituted by a weakly interacting diluent species. Analysis of the electron distribution yields the reactive behavior at interfaces. Moreover, we employ tools that allow the characterization of ion and electron transport at interfaces, during the processes of solvation and desolvation occurring while cycling. For Sulfur cathodes we elucidate synthesis processes and the role of carbon-sulfur and nitrogen-sulfur interactions not only to provide electronic conductivity but also to define alternative reaction pathways during discharge of Li-S batteries. Full-cell simulations offer new insights regarding the integration of all the battery components. Our studies also include solid electrolytes and their interfaces with Li metal, S-C, and metal-oxide electrodes.
The Hafnium oxide (HfO{sub 2}) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO{sub 2} film have been studied employing Al/HfO{sub 2}/p-Si metal–oxide–semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO{sub 2} film is obtained as 23,7.57×1011eV{sup −1} cm{sup −2} and 2.7×10{sup −5} Acm{sup −2}, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.
We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe 3 O 4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe 3 O 4 . When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe 3 O 4 , leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe 3 O 4 and negative TMR under selected oxidation conditions.
Understanding the structural stability and dynamics at the interface between the solid metal oxide and aqueous phase is significant in a variety of industrial applications including heterogeneous catalysis and environmental remediation. In the present work, the stabilities of three low-index ceria (CeO2) surfaces, i.e., (111), (110) and (100) in vapor and aqueous phases were studied using ab initio molecular dynamics simulations and density functional theory (DFT) calculations. Gibbs surface free energies as a function of temperature, water partial pressure, and water coverages were calculated using DFT based atomistic thermodynamic approach. On the basis of surface free energies, the morphology and exposed surface structures of the CeO2 nanoparticle were predicted using Wulff construction principle. It is found that the partially hydroxylated (111) and (100) are two major surface structures of CeO2 nanoparticles in vapor phase at ambient temperature (300 K). As the temperature increases, the fully dehydrated (111) surface gradually becomes the most dominant surface structure. While in aqueous phase, the exposed surface of the CeO2 nanoparticle is dominated by the hydroxylated (110) structure at 393 K. Finally, the morphology and stability of a cuboctahedron Pt13 nanocluster supported on CeO2 surfaces in both gas and aqueous phases were investigated. In gas phase, the supported Pt13 nanocluster has the tendency to wetting the CeO2 surface due to the strong metal-support interaction. The calculated interaction energies suggest the CeO2(110) surface provides the best stability for the Pt13 nanocluster. The CeO2 supported Pt13 nanoclusters are oxidized. Compared to the gas phase, the morphology of the CeO2 supported Pt13 nanocluster is less distorted due to the solvation effect provided by surrounding water molecules in aqueous phase. More electrons are transferred from the Pt13 nanocluster to the CeO2 support, implying the supported Pt13 nanocluster is further oxidized in aqueous phase.
Coplanar waveguide resonators are a perfect tool to evaluate the losses induced by defects and interfaces in superconducting devices. Even if niobium is the most used superconductor for resonators and qubits, its native oxide at the metal-air (MA) interface limits the device results. Tantalum has recently significantly improved qubit performances due to a thinner and less disordered oxide layer compared to Nb. To further improve the MA interface, we used rhenium, a superconducting material with 1.7 K critical temperature resistant to oxidation: it forms an oxide layer thinner than 1 nm. In this study, we will present a thorough investigation of rhenium CPW resonator measurements with internal quality factors at the single photon level exceeding 2 million. The devices have been fabricated on a sapphire substrate while the processing parameters have been varying and optimized. The measurements have been performed as a function of power and temperature to disentangle different sources of losses, such as two-level systems (TLS) and quasi-particles. A peculiar TLS temperature dependence has been measured and analyzed. In this work, we also vary the participation ratio of the devices to extract the losses introduced by the involved interfaces with higher fidelity and precision. We carried on a deep material characterization effort to link the results to the differences in the fabrication steps, and we will present material characterization measurements performed via AFM, ToF-SIMS, XPS, and TEM.