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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

42 ENGINEERING↗
NASA NTRS2002

Oxidation of Copper Alloy Candidates for Rocket Engine Applications

The gateway to affordable and reliable space transportation in the near future remains long-lived rocket-based propulsion systems; and because of their high conductivities, copper alloys remain the best materials for lining rocket engines and dissipating their enormous thermal loads. However, Cu and its alloys are prone to oxidative degradation -- especially via the ratcheting phenomenon of blanching, which occurs in situations where the local ambient can oscillate between oxidation and reduction, as it does in a H2/02- fuelled rocket engine. Accordingly, resistance to blanching degradation is one of the key requirements for the next generation of reusable launch vehicle (RLV) liner materials. Candidate copper alloys have been studied with a view to comparing their oxidation behavior, and hence resistance to blanching, in ambients corresponding to conditions expected in rocket engine service. These candidate materials include GRCop-84 and GRCop-42 (Cu - Cr-8 - Nb-4 and Cu - Cr-4 - Nb-2 respectively); NARloy-Z (Cu-3%Ag-0.5%Y), and GlidCop (Cu-O.l5%Al2O3 ODS alloy); they represent different approaches to improving the mechanical properties of Cu without incurring a large drop in thermal conductivity. Pure Cu (OFHC-Cu) was included in the study to provide a baseline for comparison. The samples were exposed for 10 hours in the TGA to oxygen partial pressures ranging from 322 ppm to 1.0 atmosphere and at temperatures of up to 700 C, and examined by SEM-EDS and other techniques of metallography. This paper will summarize the results obtained.

Ogbuji, Linus U. Thomas↗
NASA NTRS1994

Polyimides containing pendent siloxane groups

Novel polyimides containing pendent siloxane groups (PISOX) were prepared by the reaction of functionalized siloxane compounds with hydroxy containing polyimides (PIOH). The pendent siloxane groups on the polyimide backbone offer distinct advantages such as lowering the dielectric constant and moisture resistance and enhanced atomic oxygen resistance. The siloxane containing polyimides are potentially useful as protective silicon oxide coatings and are useful for a variety of applications where atomic oxygen resistance is needed.

Connell, John W.↗
DOE OSTI2025

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Anodization Compatibility of Eutectic Aluminum–Cerium Alloys

Anodizing is the most common method for producing corrosion resistant layer coatings for aluminum alloys. It is possible to use anodizing with most commercial aluminum alloys to increase material corrosion resistance, but often the brittle, passive oxide layer formed during anodization does not adhere well to the material, reducing effectiveness, and overall compatibility. Therefore, it is important for the compatibility and effect of anodization to be studied for any newly developed alloys. Recently developed eutectic Al–Ce alloys offer advantages like high castability, limited or no heat treatment requirements, and high-temperature strength retention. In this work, Al–Ce alloys are shown to have good compatibility with current processes and may exhibit improved adhesion of passivated layer because intermetallic phases anchor the anodized product to unconverted bulk. The source of these phenomena and their effect on material corrosion and layer adhesion properties of Al–Ce alloys will be discussed and compared with results from common commercial aluminum alloys.

Sims, Zachary↗
DOE OSTI2023

Voltage-controlled magnetic anisotropy enabled by resistive switching

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Holistic comparison of environmental barrier coating material candidates through design of a figure of merit

The first figure of merit for environmental barrier coating (EBC) materials was designed through a ranking system for material properties pertaining to established EBC failure modes in service. Seven past, present, and novel EBC candidate materials were used in the figure of merit design: SiO 2 , Ba 0.75 Sr 0.25 Al 2 Si 2 O 8 (BSAS), HfSiO 4 , Yb 2 Si 2 O 7 , Yb 2 SiO 5 , Yb 2 O 3 , and YbPO 4 . Utilizing compiled data from the literature, the presented figure of merit verified Yb 2 Si 2 O 7 as the state-of-the-art candidate with optimal EBC properties and inferred that YbPO 4 should be considered as a potentially viable EBC material candidate. Further, the figure of merit allows for a holistic comparison of EBC candidates and informs experimental and computational search efforts for next-generation complex EBCs. Clear knowledge gaps found through this work include CaO–MgO–Al 2 O 3 –SiO 2 (CMAS)-resistant coatings, EBC lifetimes before delamination, and oxidant diffusion rates in relevant EBC microstructures. It was shown that while some materials show promise for solving a single key failure mode for EBCs (i.e., CMAS reactivity), a community-wide goal should be placed on materials development to achieve acceptable resistance against all major failure modes, which are interconnected. Novel compositionally complex EBC materials, in addition to layered EBC architectures, show promise for the optimization of material properties for long-lifetime EBCs in combustion environments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗
DOE OSTI2023

Electrode Blocking Due to Redox Reactions in Aluminum Chloride-Sodium Iodide Molten Salts

Iodide redox reactions in molten NaI/AlCl 3 are shown to generate surface-blocking films, which may limit the useful cycling rates and energy densities of molten sodium batteries below 150 °C. An experimental investigation of electrode interfacial stability at 110 °C reveals the source of the reaction rate limitations. Electrochemical experiments in a 3-electrode configuration confirm an increase of resistance on the electrode surface after oxidation or reduction current is passed. Using chronopotentiometry, chronoamperometry, cyclic voltammetry, and electrochemical impedance spectroscopy, the film formation is shown to depend on the electrode material (W, Mo, Ta, or glassy carbon), as well as the Lewis acidity and molar ratio of I − /I 3 − in the molten salt electrolytes. These factors impact the amount of charge that can be passed at a given current density prior to developing excessive overpotential due to film formation that blocks the electrode surface. The results presented here guide the design and use of iodide-based molten salt electrolytes and electrode materials for grid scale battery applications.

25 ENERGY STORAGE↗
NASA NTRS1973

Two-phase charge-coupled device

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Kosonocky, W. F.↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Variations in temperatures used in experimental processing and their effect on the resulting solar cell performance parameters were investigated. Diffusion temperature variation results in a fairly distinct optimum cell performance for diffusion temperatures in the immediate vicinity of 850 C. An additional effort was also devoted to redesign of the matallization gridline pattern for both minimum light blockage and minimum fill factor alteration due to series resistance. Efforts on improvement of tantalum oxide antireflection coatings were undertaken. Fifty 2 cm x 2 cm cells having a range of thicknesses have been submitted as the first sample group. These cells were processed under conditions tentatively identified during this first contractual quarter's experiments as being optimal for resulting cell performance.

Lindmayer, J.↗
NASA NTRS1978

Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

Weinberg, I.↗
NASA NTRS1986

Material for Fast Cutting

New material for cutting tools increases productivity of machining processes. Material, called Iscanite (or equivalent), based on silicon nitride contains more than 90 percent silicon. Combines impact resistance close to that of coated carbides with heat and wear resistance close to those of aluminum oxide ceramics. Material used for cutting on old or new machine tools and makes it possible to exploit fully power and speed of machine.

Perez, A.↗
NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗