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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Adapting Secure MultiParty Computation to Support Machine Learning in Radio Frequency Sensor Networks

In this project we developed and validated algorithms for privacy-preserving linear regression using a new variant of Secure Multiparty Computation (MPC) we call "Hybrid MPC" (hMPC). Our variant is intended to support low-power, unreliable networks of sensors with low-communication, fault-tolerant algorithms. In hMPC we do not share training data, even via secret sharing. Thus, agents are responsible for protecting their own local data. Only the machine learning (ML) model is protected with information-theoretic security guarantees against honest-but-curious agents. There are three primary advantages to this approach: (1) after setup, hMPC supports a communication-efficient matrix multiplication primitive, (2) organizations prevented by policy or technology from sharing any of their data can participate as agents in hMPC, and (3) large numbers of low-power agents can participate in hMPC. We have also created an open-source software library named "Cicada" to support hMPC applications with fault-tolerance. The fault-tolerance is important in our applications because the agents are vulnerable to failure or capture. We have demonstrated this capability at Sandia's Autonomy New Mexico laboratory through a simple machine-learning exercise with Raspberry Pi devices capturing and classifying images while flying on four drones.

42 ENGINEERING↗
DOE OSTI2020

Microfluidic package and method of making the same

The present invention relates to encapsulated microfluidic packages and methods thereof. In particular embodiments, the package includes a device, a cradle configured to support the device, and a lid having a bonding surface configured to provide a fluidic seal between itself and the device and/or cradle. Other package configurations, as well as methods for making such fluidic seals, are described herein.

42 ENGINEERING↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2022

Compositional texture engineering for highly stable wide-bandgap perovskite solar cells

The development of highly stable and efficient wide-bandgap (WBG) perovskite solar cells (PSCs) based on bromine-iodine (Br–I) mixed-halide perovskite (with Br greater than 20%) is critical to create tandem solar cells. However, issues with Br–I phase segregation under solar cell operational conditions (such as light and heat) limit the device voltage and operational stability. This challenge is often exacerbated by the ready defect formation associated with the rapid crystallization of Br-rich perovskite chemistry with antisolvent processes. We combined the rapid Br crystallization with a gentle gas-quench method to prepare highly textured columnar 1.75–electron volt Br–I mixed WBG perovskite films with reduced defect density. Here, with this approach, we obtained 1.75–electron volt WBG PSCs with greater than 20% power conversion efficiency, approximately 1.33-volt open-circuit voltage (V oc ), and excellent operational stability (less than 5% degradation over 1100 hours of operation under 1.2 sun at 65°C). When further integrated with 1.25–electron volt narrow-bandgap PSC, we obtained a 27.1% efficient, all-perovskite, two-terminal tandem device with a high V oc of 2.2 volts.

14 SOLAR ENERGY↗
DOE OSTI2023

Channeling Engineering of Hydroxide Ion Exchange Polymers and Reinforced Membranes

In this project, a team of researchers from Rensselaer Polytechnic Institute developed high performance alkaline conductors which can improve efficiency and lower cost of energy storage and conversion technology. The Rensselaer Polytechnic Institute team has developed a highly ion conductive, chemically stable, and mechanically durable alkaline membrane materials. Such membranes will serve as a critical component in electrochemical devices when energy was generated from renewable sources (e.g., sun and wind) or hydrogen fuel. The use of alkaline membrane in electrochemical reactions allows to replace expensive platinum catalyst to less expensive, earth abundant metals as catalysts, offering huge economic advantages in renewable energy technology.

08 HYDROGEN↗
DOE OSTI2022

High-precision vapor pressure measurement apparatus with facile and inexpensive construction

This study describes an apparatus for high-precision variable temperature measurement of liquid vapor pressure. The apparatus can be used to measure the vapor pressure using only 0.5 ml of the liquid sample. To evaluate the accuracy of the device measurement, water and 2-propanol are utilized as standard liquids, and their vapor pressure is measured with a maximum uncertainty of ~1%. This apparatus can be replicated using inexpensive and commonly used laboratory fittings and fixtures, making it an indispensable tool for synthetic chemists and chemical engineers involved in the iterative synthesis of compounds, targeting different vapor–liquid equilibrium regimes.

Engineering↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Encoding multistate charge order and chirality in endotaxial heterostructures

Abstract High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1 T -TaS 2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS 2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H -TaS 2 /1 T -TaS 2 heterostructures in which the number of endotaxial metallic H -TaS 2 monolayers dictates the number of resistance transitions in 1 T -TaS 2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

MODEL DEVELOPMENT AND VERIFICATION OF A 1,350°C AIR RECEIVER TEST SYSTEM

Open-loop volumetric receivers work with air at atmospheric pressure and are suitable for single-cycle or multicycle power plants. A novel additively manufactured (AM) silicon carbide (SiC), ceramic matrix composite (CMC) volumetric receiver was developed that consisted of a lattice structure, which absorbs solar radiation and converts it into heat energy. Heat energy from the porous receiver was transferred to heated ambient air. The receiver acted as a convective heat exchanger, transferring heat to the fluid through convection. Engineering was facilitated to develop a high-temperature air receiver test bed at Sandia national Laboratories (SNL) capable of demonstrating a 50kWth open-loop volumetric SiC air receiver module developed by General Electric Aerospace Research (GE Aerospace). This paper presents the development of the high temperature AM SiC-CMC air receiver, the test bed, and the first testing operations of this device, which was experimentally demonstrated to achieve 1,350°C for over 3.5 hours of operation, based on input flux levels of 67–91 W/cm2 0.5-2.5 kg/s flow rates. From the test campaign results, based on the measured convective heat transfer to the airflow and bounded radiative-loss assumptions, the solar-thermal efficiency of HOTSSTAR test module was estimated to be approximately as high as 74% for representative test conditions.

14 SOLAR ENERGY↗
DOE OSTI2024

Indirect Liftoff Mechanism for High‐Throughput, Single‐Source Laser Scribing for Perovskite Solar Modules

A high‐throughput, single‐source laser scribing method exploiting a transparent conducting oxide (TCO) indirect liftoff mechanism is developed to produce serially interconnected perovskite solar modules. The TCO‐based indirect liftoff mechanism relies solely on laser absorption in the front transparent electrode material reducing thermal damage to the overlying layers and allowing for fast scribing speeds with low‐cost μs‐pulse duration fiber laser systems. Minimal resistive power losses are observed with the method compared to conventional ablative laser scribes, maintaining the power conversion efficiencies of small‐area devices (≈0.2 cm 2 ) across significantly larger deposition areas (≈1 cm 2 ). Finally, demonstrating > 3 m s −1 processing speeds, TCO‐based liftoff provides the highest throughput laser scribing method for thin‐film photovoltaic devices produced on glass/TCO substrates, capable of processing large‐area perovskite solar modules at a manufacturing scale.

14 SOLAR ENERGY↗
DOE OSTI2021

Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates

The rational bottom-up synthesis of graphene nanoribbons (GNRs) provides atomically precise control of widths and edges that give rise to a wide range of electronic properties promising for electronic devices such as field-effect transistors (FETs). Since the bottom-up synthesis commonly takes place on catalytic metallic surfaces, the integration of GNRs into such devices requires their transfer onto insulating substrates, which remains one of the bottlenecks in the development of GNR-based electronics. Herein, we report on a method for the transfer-free placement of GNRs on insulators. This involves growing GNRs on a gold film deposited onto an insulating layer followed by gentle wet etching of the gold, which leaves the nanoribbons to settle in place on the underlying insulating substrate. Scanning tunneling microscopy and Raman spectroscopy confirm that atomically precise GNRs of high density uniformly grow on the gold films deposited onto SiO 2 /Si substrates and remain structurally intact after the etching process. We have also demonstrated transfer-free fabrication of ultrashort channel GNR FETs using this process. A very important aspect of the present work is that the method can scale up well to 12 in. wafers, which is extremely difficult for previous techniques. Our work here thus represents an important step toward large-scale integration of GNRs into electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Generation of excited species in a streamer discharge

At or near atmospheric pressure, most transient discharges, particularly in molecular gases or gas mixture containing molecular gases result in a space-charge dominated transport called a streamer discharge. The excited species generation in such discharges forms the basis for plasma chemistry in most technological applications. In this paper we simulate the propagation of streamers in atmospheric pressure N 2 to understand the energy partitioning in the formation of various excited species and compare the results to a uniform Townsend discharge. The model is fully two-dimensional with azimuthal symmetry. Results show a significantly larger fraction of the energy goes into vibrational excitation of the N 2 ground state in a streamer-type discharge in comparison to a Townsend discharge. For lower applied voltages, the anode-directed (negative) steamer is slightly more efficient in channeling energy for excited species production in comparison to a cathode-directed (positive) streamer. Near 70% overvoltage both types of streamers show very similar energy partitioning but quite different from a Townsend discharge.

42 ENGINEERING↗
DOE OSTI2021

Coupling of a single tin-vacancy center to a photonic crystal cavity in diamond

In this work, we demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the β factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.

42 ENGINEERING↗
DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
DOE OSTI2019

Colloquium: Ice rule and emergent frustration in particle ice and beyond

Geometric frustration and the ice rule are two concepts that are intimately connected and widespread across condensed matter. The first refers to the inability of a system to satisfy competing interactions in the presence of spatial constraints. The second, in its more general sense, represents a prescription for the minimization of the topological charges in a constrained system. Both can lead to manifolds of high susceptibility and nontrivial, constrained disorder where exotic behaviors can appear and even be designed deliberately. This Colloquium describes the emergence of geometric frustration and the ice rule in soft condensed matter. It excludes the extensive developments of mathematical physics within the field of geometric frustration, but rather focuses on systems of confined microscopic or mesoscopic particles that emerge as a novel paradigm exhibiting spin degrees of freedom. In such systems, geometric frustration can be engineered artificially by controlling the spatial topology and geometry of the lattice, the position of the individual particle units, or their relative filling fraction. These capabilities enable the creation of novel and exotic phases of matter and also potentially lead toward technological applications related to memory and logic devices that are based on the motion of topological defects. The rapid progress in theory and experiments is reviewed and the intimate physical connections with other frustrated systems at different length scales are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Searching for Grid-Forming Technologies That Do Not Impact Protection Systems: A promising technology

The design of legacy-line protection elements has been guided by the behavior of synchronous machines during faults. Because of the significant field-winding inductance and rotating mass, the magnitude, angular frequency, and phase angle of the back-electromotive force (EMF) voltage waveforms of synchronous machines remain practically constant for several hundreds of milliseconds after a fault occurs. Furthermore this has facilitated the engineering of the memory-polarization technique in mho distance elements, which has been effective for machine-dominant power grids. However, this assumption is no longer held for inverter-based resources (IBRs) because of the lack of field winding and moment of inertia in power electronics devices. Notably, the negative-sequence directional overcurrent protection and the quadrilateral distance elements have been impacted by early IBRs with grid-following (GFL) controls because they did not inject negative-sequence currents during asymmetrical faults.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Artificial Intelligence for Power Electronics in Electric Vehicles: Challenges and Opportunities

We report progress in the field of power electronics within electric vehicles has generally been driven by conventional engineering design principles and experiential learning. Power electronics is inherently a multidomain field where semiconductor physics and electrical, thermal, and mechanical design knowledge converge to achieve a practical realization of desired targets in the form of conversion efficiency, power density, and reliability. Due to the promising nature of artificial intelligence in delivering rapid results, engineers are starting to explore the ways in which it can contribute to making power electronics more compact and reliable. Here, we conduct a brief review of the foray of artificial intelligence in three distinct subtechnologies within a power electronics system in the context of electric vehicles: semiconductor devices, power electronics module design and prognostics, and thermal management design. The intent is not to report an exhaustive literature review, but to identify the state of the art and opportunities for artificial intelligence to play a meaningful role in power electronics design from a mechanical and thermal standpoint, as well as to discuss a few promising future research directions.

33 ADVANCED PROPULSION SYSTEMS↗