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At least 1,189 records · Page 66

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 10{sup 8} n/cm{sup 2}s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 10{sup 11}, 5 × 10{sup 11}, and 1 × 10{sup 12} n/cm{sup 2}, respectively. The mean dark signal (K{sub D}), dark signal spike, dark signal non-uniformity (DSNU), noise (V{sub N}), saturation output signal voltage (V{sub S}), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.

36 MATERIALS SCIENCE↗

A metallography and x-ray tomography study of spall damage in ultrapure Al

We characterize spall damage in shock-recovered ultrapure Al with metallography and x-ray tomography. The measured damage profiles in ultrapure Al induced by planar impact at different shock strengths, can be described with a Gaussian function, and showed dependence on shock strengths. Optical metallography is reasonably accurate for damage profile measurements, and agrees within 10–25% with x-ray tomography. Full tomography analysis showed that void size distributions followed a power law with an exponent of γ = 1.5 ± 2.0, which is likely due to void nucleation and growth, and the exponent is considerably smaller than the predictions from percolation models.

36 MATERIALS SCIENCE↗

Electronic damage in S atoms in a native protein crystal induced by an intense X-ray free-electron laser pulse

Current hard X-ray free-electron laser (XFEL) sources can deliver doses to biological macromolecules well exceeding 1 GGy, in timescales of a few tens of femtoseconds. During the pulse, photoionization can reach the point of saturation in which certain atomic species in the sample lose most of their electrons. This electronic radiation damage causes the atomic scattering factors to change, affecting, in particular, the heavy atoms, due to their higher photoabsorption cross sections. Here, it is shown that experimental serial femtosecond crystallography data collected with an extremely bright XFEL source exhibit a reduction of the effective scattering power of the sulfur atoms in a native protein. Quantitative methods are developed to retrieve information on the effective ionization of the damaged atomic species from experimental data, and the implications of utilizing new phasing methods which can take advantage of this localized radiation damage are discussed.

Galli, L.↗

Spectroscopic properties and radiation damage investigation of a diamond based Schottky diode for ion-beam therapy microdosimetry

In this work, a detailed analysis of the properties of a novel microdosimeter based on a synthetic single crystal diamond is reported. Focused ion microbeams were used to investigate the device spectropscopic properties as well as the induced radiation damage effects. A diamond based Schottky diode was fabricated by chemical vapor deposition with a very thin detecting region, about 400 nm thick (approximately 1.4 μm water equivalent thickness), corresponding to the typical size in microdosimetric measurements. A 200 × 200 μm{sup 2} square metallic contact was patterned on the diamond surface by standard photolithography to define the sensitive area. Experimental measurements were carried out at the Ruder Boškovic′ Institute microbeam facility using 4 MeV carbon and 5 MeV silicon ions. Ion beam induced charge maps were employed to characterize the microdosimeter response in terms of its charge collection properties. A stable response with no evidence of polarization or memory effects was observed up to the maximum investigated ion beam flux of about 1.7 × 10{sup 9} ions·cm{sup −2}·s{sup −1}. A homogeneity of the response about 6% was found over the sensitive region with a well-defined confinement of the response within the active area. Tests of the radiation damage effect were performed by selectively irradiating small areas of the device with different ion fluences, up to about 10{sup 12} ions/cm{sup 2}. An exponential decrease of the charge collection efficiency was observed with a characteristic decay constant of about 4.8 MGy and 1 MGy for C and Si ions, respectively. The experimental data were analyzed by means of GEANT4 Monte Carlo simulations. A direct correlation between the diamond damaging effect and the Non Ionizing Energy Loss (NIEL) fraction was found. In particular, an exponential decay of the charge collection efficiency with an exponential decay as a function of NIEL is observed, with a characteristic constant of about 9.3 kGy-NIEL for both carbon and silicon ions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Shock recompaction of spall damage

Spall fracture is a high strain-rate damage phenomenon associated with shock or impulsive loading events. When a material that has been subjected to shock compression is allowed to release, rarefaction waves propagate into the sample and reduce the internal stress to zero. If multiple rarefaction waves intersect, they generate tension which, if sufficient, can nucleate voids in the material. It has been observed in several works investigating spall fracture that although the shock-wave profiles suggested spall occurred, imaging of the recovered sample revealed no voids or cracks. In this study, we aim to determine whether a second shock event could recompact existing spall damage, and if so, what form does the microstructure at the recompaction interface have? Through a series of gas-gun flyer-plate impact experiments, we demonstrate that modest shock stresses of 2 GPa–3 GPa are enough to both fully compact a damaged copper target back to a state of zero porosity and, furthermore, drive recrystallization of the interface such that there is a new bond formed where the free surfaces were brought together.

42 ENGINEERING↗

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga 2 O 3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga 2 O 3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.

Tripepi, Michael↗

Use of a non-collinear wave mixing technique to image internal microscale damage in concrete

This research demonstrates the feasibility of using a non-collinear wave mixing technique to image internal microscale damage throughout the interior volume of a relatively large (28 cm thick) concrete component. By exploiting the underlying mechanics of nonlinear wave mixing, it is possible to mix two incident waves with frequencies low enough to propagate without being scattered by the inherently heterogenous, concrete microstructure, while still being sensitive to damage features with length scales well below these incident wavelengths. For this study, scanning and imaging is accomplished by manually adjusting the locations of the two incident waves, while a knowledge of the wave speeds in concrete plus synchronization identifies the location of the mixing zone—the specific volume of concrete being imaged. The viability of the proposed technique is demonstrated by examining a concrete prism specimen with known, embedded internal microscale damage.

Kim, Jin-Yeon (ORCID:0000000255180032)↗

APE2 Zf-GRF facilitates 3'-5' resection of DNA damage following oxidative stress

The Xenopus laevis APE2 (apurinic/apyrimidinic endonuclease 2) nuclease participates in 3'-5' nucleolytic resection of oxidative DNA damage and activation of the ATR-Chk1 DNA damage response (DDR) pathway via ill-defined mechanisms. Here we report that APE2 resection activity is regulated by DNA interactions in its Zf-GRF domain, a region sharing high homology with DDR proteins Topoisomerase 3α (TOP3α) and NEIL3 (Nei-like DNA glycosylase 3), as well as transcription and RNA regulatory proteins, such as TTF2 (transcription termination factor 2), TFIIS, and RPB9. Biochemical and NMR results establish the nucleic acid-binding activity of the Zf-GRF domain. Moreover, an APE2 Zf-GRF X-ray structure and small-angle X-ray scattering analyses show that the Zf-GRF fold is typified by a crescent-shaped ssDNA binding claw that is flexibly appended to an APE2 endonuclease/exonuclease/phosphatase (EEP) catalytic core. Structure-guided Zf-GRF mutations impact APE2 DNA binding and 3'-5' exonuclease processing, and also prevent efficient APE2-dependent RPA recruitment to damaged chromatin and activation of the ATR-Chk1 DDR pathway in response to oxidative stress in Xenopus egg extracts. Collectively, our data unveil the APE2 Zf-GRF domain as a nucleic acid interaction module in the regulation of a key single-strand break resection function of APE2, and also reveal topologic similarity of the Zf-GRF to the zinc ribbon domains of TFIIS and RPB9.

59 BASIC BIOLOGICAL SCIENCES↗

Sprain energy consequences for damage localization and fracture mechanics

The 2023 smooth Lagrangian Crack-Band Model (slCBM), inspired by the 2020 invention of the gap test, prevented spurious damage localization during fracture growth by introducing the second gradient of the displacement field vector, named the “sprain,” as the localization limiter. The key idea was that, in the finite element implementation, the displacement vector and its gradient should be treated as independent fields with the lowest ( C 0 ) continuity, constrained by a second-order Lagrange multiplier tensor. Coupled with a realistic constitutive law for triaxial softening damage, such as microplane model M7, the known limitations of the classical Crack Band Model were eliminated. Here, we show that the slCBM closely reproduces the size effect revealed by the gap test at various crack-parallel stresses. To describe it, we present an approximate corrective formula, although a strong loading-path dependence limits its applicability. Except for the rare case of zero crack-parallel stresses, the fracture predictions of the line crack models (linear elastic fracture mechanics, phase-field, extended finite element method (XFEM), cohesive crack models) can be as much as 100% in error. We argue that the localization limiter concept must be extended by including the resistance to material rotation gradients. We also show that, without this resistance, the existing strain-gradient damage theories may predict a wrong fracture pattern and have, for Mode II and III fractures, a load capacity error as much as 55%. Finally, we argue that the crack-parallel stress effect must occur in all materials, ranging from concrete to atomistically sharp cracks in crystals.

Science & Technology - Other Topics↗

Radiation damage free ghost diffraction with atomic resolution

The x-ray free electron lasers can enable diffractive structural determination of protein nanocrystals and single molecules that are too small and radiation-sensitive for conventional x-ray diffraction. However the electronic form factor may be modified during the ultrashort x-ray pulse due to photoionization and electron cascade caused by the intense x-ray pulse. For general x-ray imaging techniques, the minimization of the effects of radiation damage is of major concern to ensure reliable reconstruction of molecular structure. Here in this paper, we show that radiation damage free diffraction can be achieved with atomic spatial resolution by using x-ray parametric down-conversion and ghost diffraction with entangled photons of x-ray and optical frequencies. We show that the formation of the diffraction patterns satisfies a condition analogous to the Bragg equation, with a resolution that can be as fine as the crystal lattice length scale of several Ångstrom. Since the samples are illuminated by low energy optical photons, they can be free of radiation damage.

74 ATOMIC AND MOLECULAR PHYSICS↗

Atomistic modeling of radiation damage in crystalline materials

This review discusses atomistic modeling techniques used to simulate radiation damage in crystalline materials. Radiation damage due to energetic particles results in the formation of defects. The subsequent evolution of these defects over multiple length and time scales requiring numerous simulations techniques to model the gamut of behaviors. This work focuses attention on current and new methodologies at the atomistic scale regarding the mechanisms of defect formation at the primary damage state.

36 MATERIALS SCIENCE↗

Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties

Ion beam milling is the most common modern method for preparing specific features for microscopic analysis, even though concomitant ion implantation and amorphization remain persistent challenges, particularly as they often modify materials properties of interest. Atomic force microscopy (AFM), on the other hand, can mechanically mill specific nanoscale regions in plan-view without chemical or high energy ion damage, due to its resolution, directionality, and fine load control. As an example, AFM-nanomilling (AFM-NM) is implemented for top-down planarization of polycrystalline CdTe thin film solar cells, with a resulting decrease in the root mean square (RMS) roughness by an order of magnitude, even better than for a low incidence FIB polished surface. Subsequently AFM-based property maps reveal a substantially stronger contrast, in this case of the short-circuit current or open circuit voltage during light exposure. Furthermore, electron back scattering diffraction (EBSD) imaging also becomes possible upon AFM-NM, enabling direct correlations between the local materials properties and the polycrystalline microstructure. Smooth shallow-angle cross-sections are demonstrated as well, based on targeted oblique milling. As expected, this reveals a gradual decrease in the average short-circuit current and maximum power as the underlying CdS and electrode layers are approached, but a relatively consistent open-circuit voltage through the diminishing thickness of the CdTe absorber. AFM-based nanomilling is therefore a powerful tool for material characterization, uniquely providing ion-damage free, selective area, planar smoothing or low-angle sectioning of specimens while preserving their functionality. This then enables novel, co-located advanced AFM measurements, EBSD analysis, and investigations by related techniques that are otherwise hindered by surface morphology or surface damage.

33 ADVANCED PROPULSION SYSTEMS↗

Focused-helium-ion-beam blow forming of nanostructures: radiation damage and nanofabrication

Targeted irradiation of nanostructures by a finely focused ion beam provides routes to improved control of material modification and understanding of the physics of interactions between ion beams and nanomaterials. Here, we studied radiation damage in crystalline diamond and silicon nanostructures using a focused helium ion beam, with the former exhibiting extremely long-range ion propagation and large plastic deformation in a process visibly analogous to blow forming. We report significant dependence of damage morphology on material, geometry, and irradiation conditions (ion dose, ion energy, ion species, and location). In this work, we suggest that our approach and findings will not only improve the understanding of radiation damage in isolated nanostructures, but will also support the design of new engineering materials and devices for current and future applications in nanotechnology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Low-cost sensor-based damage localization for large-area monitoring of FRP composites

Abstract In recent years, there has been growing interest in self-sensing structural materials across research and industry sectors. Detecting and locating structural damage typically requires numerous sensors wired to a data acquisition (DAQ) circuit, rendering implementation impractical in real structures. This paper proposes an innovative, cost-effective sensor network for damage detection and localization in fiber-reinforced polymer composites. The innovation encompasses three key elements: (1) utilizing carbon fiber tows within the composite as piezoresistive sensors, eliminating the need for additional foreign sensor devices; (2) introducing a novel sensor layout wherein sensor tow branches with varied resistance values are connected in parallel, reducing the number of connections to the DAQ circuit and cutting manufacturing costs significantly; (3) developing a practical sensor terminal fabrication technique to minimize manufacturing expenses. The proposed design methodology for the branch resistance values is first validated using a demonstration panel. Subsequently, the overall strategy is assessed by conducting impact tests on carbon and glass fiber-reinforced composite specimens. Results validate the sensor’s ability to accurately detect and locate structural damage.

Demo, Luke B. (ORCID:0000000208806522)↗

Measurements with silicon photomultipliers of dose-rate effects in the radiation damage of plastic scintillator tiles in the CMS hadron endcap calorimeter

Measurements are presented of the reduction of signal output due to radiation damage for two types of plastic scintillator tiles used in the hadron endcap (HE) calorimeter of the CMS detector. The tiles were exposed to particles produced in proton-proton (pp) collisions at the CERN LHC with a center-of-mass energy of 13 TeV, corresponding to a delivered luminosity of 50 fb−1. The measurements are based on readout channels of the HE that were instrumented with silicon photomultipliers, and are derived using data from several sources: a laser calibration system, a movable radioactive source, as well as hadrons and muons produced in pp collisions. Results from several irradiation campaigns using 60Co sources are also discussed. The damage is presented as a function of dose rate. Within the range of these measurements, for a fixed dose the damage increases with decreasing dose rate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Does sink efficiency unequivocally characterize how grain boundaries impact radiation damage?

The role of grain boundaries in limiting irradiation damage in nanocrystalline materials is often correlated with the grain boundary sink efficiency. Here, we demonstrate on a tungsten material system (which has very distinct vacancy and interstitial mobilities) that sink efficiency does not unequivocally describe how grain boundaries impact irradiation damage. Rather, it reflects a particular defect diffusion equation that can change if any of the bulk conditions change. Even when denuded zone formation does not occur and grain boundaries have zero sink efficiencies, grain boundaries still impact the performance of nanocrystalline materials under irradiation by acting as a saturable defect storage site. However, denuded zone formation can occur under a necessary requirement of extra defect recombination at the grain boundaries (which, for example, is not possible when vacancy migration does not occur). These insights provide answers to several outstanding questions regarding the sink efficiency of a grain boundary and assist in parametrizing the role of grain boundaries in limiting irradiation damage in nanocrystalline materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hard X-ray-induced damage on carbon–binder matrix for in situ synchrotron transmission X-ray microscopy tomography of Li-ion batteries

The electrode of Li-ion batteries is required to be chemically and mechanically stable in the electrolyte environment for in situ monitoring by transmission X-ray microscopy (TXM). Evidence has shown that continuous irradiation has an impact on the microstructure and the electrochemical performance of the electrode. To identify the root cause of the radiation damage, a wire-shaped electrode is soaked in an electrolyte in a quartz capillary and monitored using TXM under hard X-ray illumination. The results show that expansion of the carbon–binder matrix by the accumulated X-ray dose is the key factor of radiation damage. For in situ TXM tomography, intermittent X-ray exposure during image capturing can be used to avoid the morphology change caused by radiation damage on the carbon–binder matrix.

Lim, Cheolwoong↗

Miniature Crack or Damage Detection on Cable Insulation and Jacket Using Conformal Surface Wave Reflectometry

This letter introduces the study and application of a conformal surface wave launcher array to detect miniature insulation and/or jacket damage on unshielded cables. Here simulation and experimental results are presented that demonstrate that with the proposed concept very small instances of damage at various distances along power cables can be detected. Effects of damage detection feasibility in the presence of other cables in proximity and for cables containing semiconducting screen are also presented.

42 ENGINEERING↗