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At least 1,189 records · Page 66

Hard x-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction

The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, nondestructive, in-situ measurement ideal for this system. We have thus applied hard X-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few kilo-electron-volt energy range to probe the structure of an epitaxially grown MgO/Fe superlattice. The superlattice consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO(001) substrate, with a protective Al 2 O 3 capping layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 ± 4 Å, with the minor presence of FeO at the interfaces and a significantly distorted top bilayer with ca. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and X-ray reflectivity measurements. Through the STEM measurements, we confirm an overall epitaxial stack with dislocations and warping at the interfaces of ca. 5 Å. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. Finally, we thus demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few-angstrom precision.

36 MATERIALS SCIENCE↗

Pressure-induced polymorphism and piezochromism in Mn 2 FeSbO 6

In the last decade, major efforts have been devoted to searching for polar magnets due to their vast potential applications in spintronic devices. However, the polar magnets are rare because of conflicting electronic configuration requirements of ferromagnetism and electric polarization. Double-perovskite oxides with a polar structure containing transition metal elements represent excellent candidates for the polar magnet design. In this work, the crystal structure evolution of Mn 2 FeSbO 6 (MFSO) was investigated at pressures reaching ~50 GPa by in situ synchrotron X-ray diffraction (XRD), Raman scattering, and ab initio calculation techniques. The XRD results reveal ilmenite- to perovskite-type phase transition at around 35 GPa. An additional intermediate phase, observed in the range of 31–36 GPa by Raman spectroscopy, but not the XRD technique, is proposed to represent the polar LiNbO 3 phase. It is argued that this phase emerged due to the heating effect of the Raman-excitation laser. The LiNbO 3 -type MFSO compounds, displaying an intrinsic dipole ordering, represent a promising candidate for multiferroic materials. The detected phase transitions were found to be reversible although a significant hysteresis was noticeable between compression and decompression runs. Moreover, a pressure-induced piezochromism, signifying a bandgap change, was discovered by the direct visual observations and corroborated by ab initio calculations. The present study benefits an efficient high-pressure synthesis of polar magnetic double-perovskite oxides in the future.

36 MATERIALS SCIENCE↗

Embedding non-collinear two-component electronic structure in a collinear quantum environment

Spin-containing materials are important for spintronic applications. In this work, we present a computational framework to embed nonrelativistic, two-component calculations in a one-component environment. In this framework, both embedding scalar potential and magnetic field can be included to describe the interaction between quantum subsystems. In this current development, a generalized Kohn-Sham density functional theory electronic structure is embedded in unrestricted Kohn-Sham density functional theory. Two test systems are studied, specifically: a Li3 on a closed-shell He lattice and a Li3 on a He lattice containing a Li atom defect. The noncollinearity of Li3 is unaffected upon embedding in a closed-shell environment through the scalar potential embedding. However, the open-shell nature of the Li atom defect introduces an effective magnetic field that couples to the magnetic components of the generalized Kohn-Sham Hamiltonian. These results show that noncollinear quantum embedding in an open-shell collinear environment may modify the spin structure of the embedded system. The formalism developed herein may serve as a useful tool in the modeling of inhomogeneous magnetic fields in two-component calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Epitaxial Co 50 Fe 50 (110)/Pt(111) films on MgAl 2 O 4 (001) and its enhancement of perpendicular magnetic anisotropy

Perpendicular magnetic anisotropy (PMA) in magnetic thin films with low coercivity is desirable for magnetic memory devices. It has been discovered that a (111)-oriented or textured Pt seed layer can enhance PMA and is, therefore, commonly utilized in spintronic structures. We grow (111)-oriented Pt epitaxial films via off-axis sputtering on various substrates and investigate the optimal substrate and orientation for high quality, epitaxial growth. Our results show that Pt(111) epitaxial films grow remarkably well on MgAl 2 O 4 (001) with an exceptionally narrow X-ray diffraction rocking curve. This high-quality seed layer is determined to promote epitaxial growth of Pt/Co 50 Fe 50 /Pt trilayers with strong PMA comparable to many repeats of the magnetic multilayers reported previously. In addition, the Pt seed layer enhances the maximum thicknesses of Co 50 Fe 50 that can still maintain PMA up to 1.07 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Detection of Rashba spin splitting in 2D organic-inorganic perovskite via precessional carrier spin relaxation

The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (e.g., Pb and I) makes these materials interesting for applications in spintronics. In conjunction with a lack of inversion symmetry associated with distortions of the metal-halide octahedra, surfaces and interfaces, or the application of a bias, the Rashba effect (used in spin field-effect transistors and spin filters) has been predicted to be much larger in these materials than in traditional III-V semiconductors such as GaAs. Evidence of strong Rashba coupling has been observed in both 3D (bulk) and 2D perovskites, with the relative role of bulk and surface Rashba contributions in the former case under active debate. The varying size of the reported spin splittings points to the need for more experimental studies of Rashba effects in the organic-inorganic perovskite family of materials. Here, we apply time-resolved circular dichroism techniques to the study of carrier spin dynamics in a 2D perovskite thin film [(BA)2MAPb2I7; BA = CH3(CH2)3NH3, MA = CH3NH3]. Our findings confirm the presence of a Rashba spin splitting via the dominance of precessional spin relaxation induced by the Rashba effective magnetic field (also known as D’yakonov Perel spin relaxation). The size of the Rashba spin splitting in our system was extracted from simulations of the measured spin dynamics incorporating LO-phonon and electron-electron scattering, yielding a value of 10 meV at an electron energy of 50 meV above the band gap, representing a 20 times larger value than in GaAs quantum wells.

36 MATERIALS SCIENCE↗

Ultrathin interfacial layer with suppressed room temperature magnetization in magnesium aluminum ferrite thin films

Low-damping magnetic oxide thin films with small thicknesses are essential for efficient insulator spintronic devices, particularly those driven by spin torque effects. Here, we investigate the depth-resolved compositional and magnetic properties of epitaxial spinel MgAl 0.5 Fe 1.5 O 4 (MAFO), which has recently been reported as a promising low-damping insulator. We find that ≈11nm films exhibit optimal Gilbert damping, with a typical damping parameter of 0.001. While defects due to strain relaxation in the bulk of the film contribute to increased damping for large film thickness, the damping increase in thinner films is attributed to the presence of a chemically disordered magnetic dead layer at the film/substrate interface. This interfacial dead layer arises from an Fe-deficient MAFO layer. Notably, this layer is only about one-sixth the thickness of that found at the interface between yttrium iron garnet films and gadolinium gallium garnet substrates, making MAFO an ideal thin-film insulator for spin-torque applications.

36 MATERIALS SCIENCE↗

Ferromagnetic resonance of perpendicularly magnetized Tm 3 Fe 5 O 12 /Pt heterostructures

Herein, broadband ferromagnetic resonance is used to investigate magnetization dynamics, damping, interfacial spin transport, and perpendicular magnetic anisotropy (PMA) of (111)-oriented epitaxial thin films of the ferrimagnetic insulator Tm 3 Fe 5 O 12 (TmIG) on substrates of (111)-oriented Gd 3 Ga 5 O 12 . A PMA field of ~162 mT is found at 350 K, in the temperature range where spin–orbit torque switching was previously reported. A Landé g -factor of 1.56 strongly supports large intrinsic spin–orbit coupling due to the presence of the heavy rare earth Tm. Gilbert damping coefficients α are compared for three samples: a 28 nm thin TmIG film ( α ~ 0.014), a TmIG (28 nm)/Pt (6 nm) bilayer ( α ~ 0.022), and a TmIG (28 nm)/Cu (3 nm)/Pt (6 nm) trilayer ( α ~ 0.024). Applying the spin pumping formalism, we find that the real part of the effective interfacial spin mixing conductance G eff ↑↓ = 5.7 × 10 14 Ω –1 m –2 is comparable to that of well-studied garnet/Pt interfaces. Our work strengthens the candidacy of TmIG for spintronics applications requiring PMA in insulating thin films.

36 MATERIALS SCIENCE↗

Surface-enhanced spin current to charge current conversion efficiency in CH3NH3PbBr3-based devices

Hybrid organic-inorganic perovskites have shown great promise for spintronic applications due to their large spin-orbit coupling induced by the Pb and halogen atoms. Particularly, the large observed surface-induced Rashba splitting in CH3NH3PbBr3 indicates efficient spin-current-to-charge-current (StC) conversion, which, however, has not been demonstrated yet. In this work, the StC conversion efficiency in ferromagnet/CH3NH3PbBr3-based devices is studied using the pulsed spin-pumping technique measured by the inverse spin Hall effect. We found that the StC conversion efficiency is anomalous in that it increases at small perovskite layer thickness. This indicates the existence of a surface-dominated StC mechanism such as the inverse Rashba-Edelstein effect. By inserting a thin LiF layer between the ferromagnet and the perovskite film, the StC conversion efficiency is greatly suppressed, validating the existence of a Rashba surface in the CH3NH3PbBr3 film.

Sun, Dali (ORCID:0000000346623265)↗

Electronegative ligands enhance charge transfer to Mn 12 single-molecule magnets deposited on graphene

Combining single-molecule magnets (SMMs) and emergent two-dimensional substrates such as graphene may lead to device configurations that are promising for spintronics and quantum computing. Yet, to fully consider the unique features of SMMs anchored to two-dimensional substrates, the choice of ligand attachments, which could affect the magnetic and electronic properties, is critical. In this work, we focus on hybrid junctions comprising CVD-grown graphene and [Mn 12 O 12 (O 2 CR) 16 (H 2 O) 4 ]( R = CH 3 , CHCl 2 ) SMMs with different ligands. We find that [Mn 12 O 12 (O 2 CCH 3 ) 16 (H 2 O) 4 ] SMMs barely change the graphene’s conductivity, while [Mn 12 O 12 (O 2 CCHCl 2 ) 16 (H 2 O) 4 ] SMMs with more electronegative ligands, by means of charge transfer, remarkably modify the electronic transport in graphene as revealed by gate-voltage dependent magnetotransport measurements.

74 ATOMIC AND MOLECULAR PHYSICS↗

Emerging edge states on the surface of the epitaxial semimetal CuMnAs thin film

Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here, we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step edge reconstruction can be attributed to an As deficiency that results in changes in the density of states of the remaining As atoms at the step edge. Furthermore, this understanding of the surface structure and step edges on the CuMnAs thin film will enable in-depth studies of its topological properties and magnetism.

36 MATERIALS SCIENCE↗

Pulsed-laser epitaxy of metallic delafossite PdCrO 2 films

Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO 2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of delafossites may enable not only the tuning of the basic physical properties beyond what bulk materials can exhibit, but also the development of novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO 2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinity, the direct growth of epitaxial PdCrO 2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities with the substrate and volatile nature of the PdO sublayer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO 2 buffer layers before PdCrO 2 films were grown. Unlike PdCrO 2 , CuCrO 2 films were readily grown with a relatively wide growth window. Only a monolayer thick buffer layer was sufficient to grow the correct PdCrO 2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness. This work provides key insights into advancing the epitaxial growth of the broader class of metallic delafossites for both studying the basic physical properties and developing new spintronic and computing devices.

36 MATERIALS SCIENCE↗

Ultrafast low-temperature metal–insulator interface phonon dynamics and heat transport in a Pt/Gd 3 Fe 5 O 12 heterostructure

Interfacial thermal and acoustic phenomena have an important role in quantum science and technology, including in spintronic and spincaloritronic materials and devices. Simultaneous measurements of the low-temperature thermal and acoustic properties of a metal/insulator heterostructure reveal distinct dynamics in the characteristic phonon frequency ranges of acoustic and thermal transport. The measurements probed a heterostructure consisting of a thin film of Pt on the ferrimagnetic insulator gadolinium iron garnet (Gd 3 Fe 5 O 12 , GdIG) grown epitaxially on a gadolinium gallium garnet substrate. Ultrafast structural dynamics within the Pt layer were tracked using time-resolved ultrafast x-ray diffraction and analyzed to probe interfacial acoustic and thermal properties. The rapid heating of the Pt layer by a 400 nm wavelength femtosecond-duration optical pulse produced transient structural changes that provided the stimulus for these measurements. Rapid heating produced a broadband acoustic pulse that was partially reflected by the Pt/GdIG interface. Temporal frequencies up to 740 GHz, corresponding to angular frequencies of several THz, were detected in a wavelet analysis of the acoustic oscillations of the strain in the Pt layer. The structural results were analyzed to determine (i) the acoustic damping coefficient and phonon mean free path in Pt at frequencies of hundreds of GHz and (ii) the Grüneisen anharmonicity parameter. The thermal conductance of the Pt/GdIG interface was tracked using the slower, tens-of-picosecond-scale, dynamics of the initial cooling of the heated Pt layer. Analysis using a model based on the Boltzmann transport equation shows that the phonon transmission is lower at the phonon frequencies relevant to thermal transport than for subterahertz regime acoustics.

Acoustic phenomena↗

Deformation of Néel-type skyrmions revealed by Lorentz transmission electron microscopy

Néel-type magnetic skyrmions in multilayers are promising candidates for ultra-low power spintronic devices. To image the Néel-type skyrmions using Lorentz transmission electron microscopy (L-TEM), the samples must be tilted. Thus, the external magnetic field consists of both in-plane and out-of-plane components. To date, it is still not well known on the effect of the in-plane magnetic field on the L-TEM images, leading to ambiguities in retrieving the structure of Néel-type skyrmions. Here, Néel-type skyrmions in three [Pt/Co/Ta]$_{20}$ multilayer samples, with the easy magnetization axis being tuned from the out-of-plane to the in-plane direction by increasing the Co thickness from 1.8 to 2.2 nm, are imaged. When using a smaller defocus value (-2 mm) and a higher magnification (×9100) of L-TEM, a surprising dark-bright-dark-bright double contrasted pattern, instead of the previously reported dark-bright contrasted pattern, is observed. The additional dark-bright contrasted pattern becomes more evident for thicker Co layer samples in which the magnetization axis tilts more toward the in-plane direction. Further analysis, via a combination of magnetic force microscopy experiments, micromagnetic simulations, and micromagnetic analysis to Lorentz TEM simulation, shows that the additional dark-bright features originate from the deformation of the Néel-type skyrmions within an in-plane magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The role of iron in magnetic damping of Mg(Al,Fe) 2 O 4 spinel ferrite thin films

© 2020 Author(s). We have investigated magnesium aluminum ferrite thin films with a range of iron concentrations and identified the optimal iron content to obtain high crystalline quality thin films with the low magnetic damping required for spin current-based applications. Epitaxial MgAl 2-x FexO4 films with 0.8 < x < 2.0 were grown by pulsed laser deposition on single crystal MgAl2O4 substrates and were characterized structurally and magnetically. We find that the x = 1.5 composition minimizes the room-temperature magnetic damping with a typical Gilbert damping parameter of α eff = 1.8 × 10-3. This minimized damping is governed by a competition between the more robust magnetic ordering with increased iron content, x, and the more defective structure due to larger film-substrate lattice mismatch with increased iron content. The temperature-dependent magnetization curves indicate that Tc is suppressed below room temperature for iron content x ≤ 1.2 and eventually suppressed entirely for x = 0.8. X-ray magnetic circular dichroism results indicate that for all x the magnetic moment is dominated by Fe 3 + cations distributed in a 60:40 ratio on the octahedral and tetrahedral sites, with minimal contribution from Fe 2 + cations. Films with x = 1.4-1.6 exhibit very strong ferromagnetic resonance and low Gilbert damping with α eff = (1.8-6) × 10-3, making them ideal candidates for microwave and spintronic applications.

36 MATERIALS SCIENCE↗

Study of the perpendicular magnetic anisotropy, spin–orbit torque, and Dzyaloshinskii–Moriya interaction in the heavy metal/CoFeB bilayers with Ir 22 Mn 78 insertion

The perpendicular magnetic anisotropy (PMA), current-induced spin–orbit torques (SOTs), and Dzyaloshinskii–Moriya interaction (DMI) in the as-grown W or Ta/Ir 22 Mn 78 (IrMn)/CoFeB/MgO stacks with varying IrMn layer thicknesses were investigated. The in-plane magnetized W/CoFeB/MgO sample becomes perpendicularly magnetized after inserting the IrMn layer without the requirement of the annealing process. The effective magnetization fields 4π Meff show a nonmonotonic dependence on the IrMn layer thickness, which reaches the maximum in magnitude at a thickness of tIrMn = 0.75 nm. The SOT effective fields corresponding to damping-like and field-like torques decrease with the insertion layer thickness. Moreover, the variation of the IrMn layer thickness leads to the change of the DMI in magnitude and sign change from positive (favoring right-handed chirality) to negative (favoring left-handed chirality). The realization of changing the PMA, SOTs, and DMI by inserting the IrMn layer provides more flexibility in the design of spintronic devices.

Physics↗

Controlling antiferromagnetic domains in patterned La0.7Sr0.3FeO3 thin films

Transition metal oxide thin films and heterostructures are promising platforms to achieve full control of the antiferromagnetic (AFM) domain structure in patterned features as needed for AFM spintronic devices. In this work, soft x-ray photoemission electron microscopy was utilized to image AFM domains in micromagnets patterned into La0.7Sr0.3FeO3 (LSFO) thin films and La0.7Sr0.3MnO3 (LSMO)/LSFO superlattices. A delicate balance exists between magnetocrystalline anisotropy, shape anisotropy, and exchange interactions such that the AFM domain structure can be controlled using parameters such as LSFO and LSMO layer thickness, micromagnet shape, and temperature. In LSFO thin films, shape anisotropy gains importance only in micromagnets where at least one extended edge is aligned parallel to an AFM easy axis. In contrast, in the limit of ultrathin LSFO layers in the LSMO/LSFO superlattice, shape anisotropy effects dominate such that the AFM spin axes at micromagnet edges can be aligned along any in-plane crystallographic direction.

Lee, Michael S. (ORCID:0000000177852189)↗

Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.

36 MATERIALS SCIENCE↗

Magnetic states of atomic vacancies in graphite probed by scanning tunneling microscopy

Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the localization effect and hinders the observation of those magnetic states. Here, we use an ultra-low-temperature scanning tunneling microscope with a high magnetic field to observe the magnetic states of atomic vacancies in graphite generated by ion sputtering. Scanning tunneling spectroscopy reveals localized states at the vacancies, which exhibit splitting at a certain magnetic field whose separation increases with the field strength. The transition is well described by the “Anderson model,” which describes the emergence of localized magnetic states inside the metallic reservoir through electron–electron interaction. The interaction strength is estimated to be between 1 meV and 3 meV, which is supported by the density functional theory calculation. The observation provides an important foundation for application of intrinsic defects to carbon-based spintronic devices.

36 MATERIALS SCIENCE↗