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At least 1,189 records · Page 66

Performance test results of a skutterudite-based unicouple with a metallic coating

A performance test of a Skutterudite-based unicouple (MAY-04) with a metallic coating to suppress the sublimation of antimony from the legs near the hot junction is performed in vacuum (~ 9 x10-7 torr) for ~ 2,000 hours at hot and cold junction temperatures of 892.1 + 11.9 K and 316.1 + 5.5 K, respectively. The p-leg is made of CeFe3.5Co0.5Sb12 and the n-leg is made of CoSb3. Presented are the measured voltage-current characteristics, electrical power, open-circuit voltage, and Seebeck coefficients of the legs as functions of cumulative test time. Also presented is the estimate of the conversion efficiency, shortly (~ 96 hrs) after the start of test. To demonstrate the effectiveness of the metallic coating, the measurements for MAY-04 are compared with those of two uncoated unicouples of the same leg materials (MAR-03 and JUN-03), which had been tested earlier. The cross-sectional areas of the legs in MAY-04 are larger than those in MAR-03 and JUN-03, tested in argon cover gas at ~ 0.051-0.068 MPa for 450 and 1200 hours, respectively. The open circuit voltage, Voc (204 mV) of MAY-04 at Beginning-Of-Test (BOT) is almost the same as that of MAR-03, but higher than that of JUN-03 (~180 mV). Although the argon gas effectively decreased antimony loss from legs of MAR-03 and JUN-03, marked degradations in performance occurred with time in these tests. Conversely, the metallic coating in MAY-04 effectively reduced the performance degradation with cumulative test time. The estimated peak efficiency of MAY-04, shortly after BOT (10.65%) is only ~ 0.37 percentage point lower than the theoretical value, assuming zero side heat losses and zero contact resistance per leg. The peak power of MAY- 04 decreased by only ~12%, from its BOT value of ~1.6 We to ~ 1.4 We after ~ 2,000 of cumulative testing

Caillat, Thierry↗

Single frequency RF powered ECG telemetry system

It has been demonstrated that a radio frequency magnetic field can be used to power implanted electronic circuitry for short range telemetry to replace batteries. A substantial reduction in implanted volume can be achieved by using only one RF tank circuit for receiving the RF power and transmitting the telemetered information. A single channel telemetry system of this type, using time sharing techniques, was developed and employed to transmit the ECG signal from Rhesus monkeys in primate chairs. The signal from the implant is received during the period when the RF powering radiation is interrupted. The ECG signal is carried by 20-microsec pulse position modulated pulses, referred to the trailing edge of the RF powering pulse. Satisfactory results have been obtained with this single frequency system. The concept and the design presented may be useful for short-range long-term implant telemetry systems.

Ko, W. H.↗

Complementary DMOS-VMOS integrated circuit structure

A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by forming a double diffusion along one edge of a V groove, or ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.

Jhabvala, M. O.↗

Sudden-Discharge Cycling Characteristics and Millisecond Dynamic Behaviors of a HTS Stainless-Steel Insulated Double-Pancake Coil With Thin Copper Plates

We have tested an intermediate-sized HTS stainless-steel (co-wound) insulated double pancake coil (~132 turns per coil) and discovered dynamic effects during sudden discharge on both millisecond and second scales. For soft break, the power supply is turned off suddenly but the shunt resistor (164 milliohm) is still connected; for hard break, a high voltage contactor is used to suddenly open the circuit so that the leads are completely open. Hard break is dangerous to traditionally insulated LTS magnets, but the SS-insulated HTS DPC retained integrity over ¡80 charge-discharge cycles. Voltage decay curves for soft and hard breaks are studied on short and long timescales. On long timescales, we observe the expected exponential decay and measure the time constant to calculate contact resistance. On short timescales, we observe highly dynamic effects: a hyper-exponential decay suggesting that the inductance or contact resistance is suddenly changing with time, likely an indication of the RL circuit forming. Moreover, peak voltage immediately (ms) after the sudden discharge were collected and compared. It is found that the peak voltage in soft-discharge is proportional to the applied current, while the those in hard-break has a unique pattern and tends to stay flat even though the applied current increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Polarization-controlled volatile ferroelectric and capacitive switching in Sn 2 P 2 S 6

Abstract Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn 2 P 2 S 6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau–Ginzburg–Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

97 MATHEMATICS AND COMPUTING↗

Low-cost gradient amplifiers for small MRI systems

Here, we describe low-cost gradient amplifiers for small MRI systems, such as those based on small/medium permanent magnets. The requirements for MRI gradient amplifiers are quite similar to those of modestly priced audio stereo power amplifiers. Such amplifiers for sound service can be modified to be DC coupled, extending their response down to zero frequency, as needed for MRI gradient service. We describe such modifications to one unit (Samson Servo 600) and mention a commercially available modification of another. The 600 is capable of an output greater than ±8 A and ±60 V, much greater than our needs for a greenhouse MRI. Audio amplifiers can be used this way as controlled voltage (CV) gradient amplifiers, with acceptable performance because the gradient coils typically have short L/R time constants. Superior performance can be had by using a controlled current (CC) “front end”; the circuit of our simple front end is included. The complete 3-axis CC system costs about $1200.

47 OTHER INSTRUMENTATION↗

Simplified calculation of the area specific impedance for solid-state battery design

Simplified algebraic area specific impedance (ASI) correlations have been developed for solid-state composite battery electrodes made of a single ion conducting electrolyte, conductive additive, and intercalation active material. Two ASI expressions were developed, one for short times ( i.e. , pulsed power operation) and another for the pseudo steady state operation (i.e., sustained discharge for energy estimation). A full electrochemical model based on porous electrode theory was developed to examine the accuracy of the simplified ASI expressions. The simplified expressions agree favorably with full model results over a wide range of parameters (i.e. , electrode thicknesses, electrolyte conductivities, solid-state diffusion coefficients, specific surface areas, etc.) and conditions (i.e. , C-rates, states of charge, and pulse times). Under most conditions, the error between the full model and the correlations is well below 7 %. Higher errors were observed for the pseudo steady state expression at high/ low states of charge where the assumption of uniform reaction distributions loses validity. Here, the short time ASI has higher error at low states of charge due to the nonlinearity of the open circuit voltage equation, which is assumed linear in the formulation of the simplified algebraic expression.

25 ENERGY STORAGE↗

LEBT Buncher / Feed Forward / Frequency Generation: System Design Document (SDD)

The LAMP Low Energy Beam Transport (LEBT) transfers a continuous beam at 100 keV from the ion source to RFQ in LEBT. A LEBT buncher imposes an energy tilt to initiate velocy bunching in the chopped beam pulse about 25 ns long to form a short MPEG bunch. One possible option for the LEBT buncher based on a two-gap LC-circuit driven structure was considered, which is similar to the existing LANSCE low-frequncy buncher (LFB). Another possible option is a non-resonant element driven by a pulse-forming-network that provides a single pulse at the repetition frequency of MPEG beam, with a period of 1.8 µs. The LEBT operation is synchronized with the accelerator timing system.

43 PARTICLE ACCELERATORS↗

Response of a metal-oxide-semiconductor field-effect transistor to a cosmic-ray ion track

A cosmic-ray ion track passing perpendicularly through the oxide layer of an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) forms a conducting path, the resistance of which is proportional to the stopping power of the cosmic ion and independent of the cross-sectional area of the ion track. The voltage across the oxide capacitance may drop below the threshold voltage if the gate bias is sufficiently low or if the external resistance in the gate-source circuit is sufficiently high. The first of a pair of MOSFETs forming a flip-flop circuit may thus be turned off, and the second transitor may turn on, providing it has a sufficiently short delay time, thereby completing a single-event upset.

Benumof, Reuben↗

Providing hydrogen maser timing stability to orbiting VLBI radio telescope observations by post-measurement compensation of linked frequency standard imperfections

Orbiting VLBI (OVLBI) astronomical observations are based upon measurements acquired simultaneously from ground-based and earth-orbiting radio telescopes. By the mid-1990s, two orbiting VLBI observatories, Russia's Radioastron and Japan's VSOP, will augment the worldwide VLBI network, providing baselines to earth radio telescopes as large as 80,000 km. The challenge for OVLBI is to effectuate space to ground radio telescope data cross-correlation (the observation) to a level of integrity currently achieved between ground radio telescopes. VLBI radio telescopes require ultrastable frequency and timing references in order that long term observations may be made without serious cross-correlation loss due to frequency source drift and phase noise. For this reason, such instruments make use of hydrogen maser frequency standards. Unfortunately, space-qualified hydrogen maser oscillators are currently not available for use on OVLBI satellites. Thus, the necessary long-term stability needed by the orbiting radio telescope may only be obtained by microwave uplinking a ground-based hydrogen maser derived frequency to the satellite. Although the idea of uplinking the frequency standard intrinsically seems simple, there are many 'contaminations' which degrade both the long and short term stability of the transmitted reference. Factors which corrupt frequency and timing accuracy include additive radio and electronic circuit thermal noise, slow or systematic phase migration due to changes of electronic circuit temporal operating conditions (especially temperature), ionosphere and troposphere induced scintillations, residual Doppler-incited components, and microwave signal multipath propagation. What is important, though, is to realize that ultimate stability does not have to be achieved in real-time. Instead, information needed to produce a high degree of coherence in the subsequent cross-correlation operation may be derived from a two-way coherent radio link, recorded and later introduced as compensations adjunct to the VLBI correlation process. Accordingly, this paper examines the technique for stable frequency/time transfer within the OVLBI system, together with a critique of the types of link degradation components which must be compensated, and the figures of merit known as coherence factors.

Springett, James C.↗

Light induced ion migration studies in perovskite solar cell using nonlinear impedance spectroscopy

Complex interactions between mobile ions and charge carriers in perovskite solar cells (PSCs) make it challenging to fully understand their dynamic interplay. Exposure to light further complicates these interactions, altering the system’s dynamics and inducing nonlinear effects that lead to changes in the J−V curve. Understanding these effects is crucial for improving the operational stability of PSCs. Impedance spectroscopy (IS) is a powerful technique for evaluating relaxation processes in the frequency domain; however, it is limited in capturing nonlinear contributions. Here, in this work, nonlinear impedance spectroscopy (NLIS) is employed to analyze the higher harmonic response to AC perturbation, both in the dark and after short-term light exposure. A shift in the low-frequency (LF) higher harmonic peak is observed after open-circuit light exposure, attributed to an altered electric field suggesting ion re-distribution, whereas closed-circuit exposure shows no LF shift, indicating minimal ion movement. Additionally, light exposure reduces higher-order admittance, more notably in open-circuit conditions, suggesting decreased recombination. Temperature-dependent analysis was conducted to characterize the activation energy of migrating species, identifying iodide as the dominant migrating ion.

14 SOLAR ENERGY↗

Cam-operated limit switch features safe fuse replacement

Two hermetically sealed, short travel, limit switches permit fuse replacement without danger of a spark or arcing. The switches are wired in parallel circuits and actuated by manually operated cams containing the circuit fuses.

Weber, G. J.↗

New aircraft instrument indicates turbulence intensity

System consists of accelerometer, indicator, and necessary electronic circuits for summing and averaging accelerations. Averaging-time feature enables pilot to see large values of accelerations over a short time or smaller accelerations over longer period of time.

Champine, R. A.↗

Solar modulation of atmospheric electrification through variation of the conductivity over thunderstorms

It is suggested that variations of the current in the global atmospheric electrical circuit can be produced through regulation of the resistance between the tops of thunderclouds and the ionosphere. Long- and short-term changes in the conductivity of this region occur due to changes in the ionization rate resulting from solar activity. Previous suggestions that the phenomena might be due to conductivity variations in the fair weather part of the world or an influx of space charge to the upper atmosphere are discussed and considered unlikely. It might be possible to test the proposed mechanism by measuring the temporal variation of the ionospheric potential during distributed solar periods. Another approach would be to measure simultaneously the variation in ionization rate and electric current over thunderstorms. Several ways in which changes in atmospheric electrification might influence other meteorological phenomena are mentioned.

Markson, R.↗

Nonvolatile GaAs Random-Access Memory

Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

Katti, Romney R.↗

Sixty Earth-Days Test of a Prototype Pt/HTCC Alumina Package in Simulated Venus Environment

This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar pressure. The prototype package is based on previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degC Earth air ambient for over ten thousands hours, and short-term tested at temperatures above 800 degC. The three-phase harsh environment test started with 48 hours in 465 degC Earth air, followed by 48 hours in 465 degC nitrogen at 90 bar pressure and 1400 hours in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar. Initial analytical results of the package materials and surfaces after exposure to Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.

Chen, Liangyu↗

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗

Using Explainable Artificial Intelligence to Predict Perovskite Solar Cell Electrical Metastability from Operando Photoluminescence Images in Accelerated Stress Testing

Metal halide perovskite (MHP) solar cells exhibit a metastable response to bias governed by coupled ionic–electronic processes, complicating the conventional reciprocity relation between luminescence intensity and device open-circuit voltage (V oc ). This limits the use of luminescence as a diagnostic for device screening or accelerated stress testing, motivating new approaches that can interpret photoluminescence (PL) signals under nonequilibrium conditions. From the artificial intelligence perspective, we develop an explainable deep learning framework that integrates convolutional neural networks (CNN), long short-term memory (LSTM) layers, and an attention mechanism to learn spatiotemporal features from operando photoluminescence PL image sequences. The model achieves a mean absolute error of ±0.027 V in predicting open-circuit voltage transients and reduces extreme-tail errors by up to 78% compared to physics-based reciprocity calculations. Gradient-weighted Class Activation Mapping (Grad-CAM) provides interpretability by highlighting physically meaningful regions such as electrode edges and emergent defect features. From the engineering application perspective, this framework enables accurate, contactless prediction of device V oc and identification of degradation-relevant features during accelerated aging of perovskite solar cells. This approach demonstrates how explainable AI can enhance operando diagnostics and reliability analysis in photovoltaic devices under nonequilibrium conditions.

14 SOLAR ENERGY↗