Effect on dark matter exclusion limits from new silicon photoelectric absorption measurements
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Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ~10% higher κ for bulk 28 Si than for bulk natural Si ( nat Si). Here we show that in stark contrast to this bulk behavior, 28 Si (99.92% enriched) nanowires have up to 150% higher κ than nat Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in nat Si nanowires, correlated via transmission of phonons to the native amorphous SiO 2 shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.
The nuclear charge radius of 32 Si was determined using collinear laser spectroscopy. The experimental result was confronted with ab initio nuclear lattice effective field theory, valence-space in-medium similarity renormalization group, and mean field calculations, highlighting important achievements and challenges of modern many-body methods. The charge radius of 32 Si completes the radii of the mirror pair 32 Ar – 32 Si, whose difference was correlated to the slope L of the symmetry energy in the nuclear equation of state. Furthermore, our result suggests L ≤ 60 MeV, which agrees with complementary observables.
We perform a systematic study of thermal resistance and conductance of tilt grain boundaries (GBs) in Si using classical molecular dynamics. The GBs studied are naturally divided into three groups according to the structural units forming the GB core. In this work we find that, within each group, the GB thermal conductivity strongly correlates with the excess GB energy. All three groups predict nearly the same GB conductivity extrapolated to the high-energy limit. This limiting value is close to the thermal conductivity of amorphous Si, suggesting similar heat transport mechanisms. While the lattice thermal conductivity decreases with temperature, the GB conductivity slightly increases. However, at high temperatures it turns over and starts decreasing if the GB structure undergoes a premelting transformation. Analysis of vibrational spectra of GBs resolved along different directions sheds light on the mechanisms of their thermal resistance. The existence of alternating tensile and compressive atomic environments in the GB core gives rise to localized vibrational modes, frequency gaps creating acoustic mismatch with lattice phonons, and anharmonic vibrations of loosely bound atoms residing in open atomic environments.
Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.
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Perfect-crystal neutron interferometry, which is analogous to Mach-Zehnder interferometry, uses Bragg diffraction to form interfering neutron paths. The measured phase shifts can be used to probe many types of interactions whether it be nuclear, electromagnetic, gravitational, or topological in nature. For a perfect-crystal interferometer to preserve coherence, the crystal must possess a high degree of dimensional tolerance as well as being relatively defect-free with minimal internal stresses. In the past, perfect-crystal neutron interferometers have been produced by a two-step process. First, a resin diamond wheel would be used to remove excess material and shape the interferometer. Afterword, the crystal would be etched to remove surface defects and elevate strains. This process has had limitations in terms of repeatability and in maximizing the final contrast, or fringe visibility, of the interferometer. We have tested various fabrication and post-fabrication techniques on a single perfect-crystal neutron interferometer and measured the interferometer's performance at each step. Here we report a robust, nonetching fabrication process with high final contrast. For the interferometer used in this work, we achieved contrasts of greater than 90% several times and ultimately finished with an interferometer that has 92% contrast and a uniform phase distribution. Published by the American Physical Society 2024
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Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.
We present a CMOS-fabricated photonic integrated circuit tailored to the generation of ultrabroadband polarization-entangled photons. This fully on-chip source leverages a novel design combining polarization splitter-rotators and a bidirectionally pumped microring resonator to produce high-fidelity polarization Bell states over 115 frequency-bin pairs spaced 38.4 GHz apart.