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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Thin n-i-p silicon solar cell

A space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.

Meulenberg, A., Jr.↗
NASA NTRS1980

Solar cells and modules from dentritic web silicon

Some of the noteworthy features of the processes developed in the fabrication of solar cell modules are the handling of long lengths of web, the use of cost effective dip coating of photoresist and antireflection coatings, selective electroplating of the grid pattern and ultrasonic bonding of the cell interconnect. Data on the cells is obtained by means of dark I-V analysis and deep level transient spectroscopy. A histogram of over 100 dentritic web solar cells fabricated in a number of runs using different web crystals shows an average efficiency of over 13%, with some efficiencies running above 15%. Lower cell efficiency is generally associated with low minority carrier time due to recombination centers sometimes present in the bulk silicon. A cost analysis of the process sequence using a 25 MW production line indicates a selling price of $0.75/peak watt in 1986. It is concluded that the efficiency of dentritic web cells approaches that of float zone silicon cells, reduced somewhat by the lower bulk lifetime of the former.

Campbell, R. B.↗
NASA NTRS1980

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Weinberg, I.↗
NASA NTRS1981

Meteoric ion production near Jupiter

Meteoric ion layer formation within the Jovian atmosphere is examined with attention to metallic ion production in the lower ionosphere. The Fe(+) impact ionization rate within the Jovian atmosphere peaks above the mesopause with a magnitude of approximately 0.5 cu cm/sec and is much less than the ambient ionosphere photoionization rates near the late afternoon Pioneer 10 ionosphere occultation. Charge exchange of the ablated neutral Fe atoms with ambient ions can result in an Fe(+) production rate of about 10 cu cm/sec. Ignoring transport, steady state Fe(+) density maxima of about 10,000 or 1,000,000 cu cm can be maintained when Fe(+) loss is through radiative association or radiative recombination respectively. Even if an estimated lower limit to the incident meteoroid flux is used based on a meteoroid spatial density which does not vary with distance from the sun, the corresponding Fe(+) peak densities are 1,000 and 500,000 cu cm, respectively. Meteoric ion densities may thus be important in the Jovian lower ionosphere.

Grebowsky, J. M.↗
NASA NTRS1981

H2 abundance in the atmosphere of Venus

The in situ measurements from the Pioneer Venus Orbiter (PVO) Ion Mass Spectrometer have led to the detection of H2(+) ions in the Venus ionosphere. Although H2(+) is a minor ion, its measurement provides the first direct clue for determining the H2 abundance in the upper atmosphere of Venus. A photochemical model using PVO measurements is used to derive an H2 mixing ratio of 10 ppm below 140 km altitude. The presence of this much H2 confirms a previous prediction that the reactions of O(+) with H2 and subsequent recombination of OH(+) provide an important source of nonthermal H observed in the Venus atmosphere. The estimated escape flux for H is 10 to the 8th per sq cm/s.

Kumar, S.↗
NASA NTRS1981

Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation

The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.

Whitaker, A. F.↗
NASA NTRS1981

Spectroscopy of the B-gamma line in the Galactic center

Spectra of the B-gamma recombination line of hydrogen in the Galactic center show that the line has central velocities and shapes similar to those reported previously for the Ne II line. Observations are made at 10 positions within the infrared cluster of the Galactic center with a circular diaphragm of diameter 5 arcsec and with a spectral resolution of approximately 85 km/sec. The spectra confirm that the ionized gas in the Galactic center is distributed in discrete clouds.

Nadeau, D.↗
NASA NTRS1981

Transport velocity transformation - A convenient method for performance analysis of multilayer solar cell structure

It is noted that in the case of low-level injection, space-charge quasi-neutrality, and spatially constant material parameters (including an electrostatic field), the individual layer can be treated analytically and the basic solar cell performance parameters can be evaluated from three equations. The first equation represents the transformation of the transport velocity across the layer from the other layer boundary. The second establishes the light-generated current output from the layer interface, under the influence of the transport velocities and minority-carrier density at both layer boundaries and of bulk recombination. The third equation describes the flow of these carriers across other layers. The power of the approach is considered to lie in its facility for analysis of the solar cell's performance layer by layer, giving a clear picture of the individual layer's influence on cell efficiency.

Wolf, M.↗
NASA NTRS1981

Ultraviolet emission of the Vela supernova remnant and the Cygnus Loop

Ultraviolet emission spectra of several filaments in the Vela supernova remnant and the Cygnus Loop are compared with theoretical models of radiative shocks. Shock velocities range from 85 to 130 km/s. Little or no grain depletion is apparent. Several of the observed filaments deviate from the steady-flow models in the sense that much of the photoionization-recombination zone is absent. It is shown that resonance line scattering within the emitting region can account for the weakness of the C II 1335 and C IV 1550 lines. Evaporation fronts, which are basic to the McKee and Ostriker picture of supernova remnant evolution, do not contribute significantly to the observed emission. Some discrepancies in UV emission predicted by different sets of shock models are traced to differing atomic rates used in the calculations. A fluorescent emission line of H2 may be observable in some supernova remnants.

Raymond, J. C.↗
NASA NTRS1981

Cathodoluminescence of InP

Cathodoluminescence studies were carried out on p-type InP having carrier concentrations ranging from 7.2 x 10 to the 16th to 7.4 x 10 to the 18th per cu cm in the temperature range of 80-580 K. It was found that low-temperature spectra exhibited peaks at 1.41 and 1.38 eV. These peaks were attributed to band-to-band and band-acceptor transitions, respectively. The dependence of the band-to-band peak on temperature was used to extend knowledge of the temperature dependence of the energy gap of InP to 550 K. It was shown that the half-width of the cathodoluminescence peak can be used for the determination of carrier concentration and carrier-concentration inhomogeneities in the material. The variations of the cathodoluminescence peak height with temperature indicated the possibility of Auger recombination for high carrier concentrations (7.4 x 10 to the 18th per cu cm) at temperatures above 450 K.

Gatos, C. H.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS1981

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗
NASA NTRS1981

New ionization fractions for the lithium- and helium-like ionization stages of calcium and iron

A reinterpretation of the high resolution X-ray spectra of Ca XIX and Fe XXV, observed during a solar flare on March 25, 1979, is presented. New ionization fractions for Ca XVIII, Ca XIX, Fe XXIV, and Fe XXV are used, and it is shown that the new calculations substantially change the interpretation of the spectra. It is implied that the flare plasma was ionizing during the early phases of the flare, and recombining during the decay phase.

Doyle, J. G.↗
NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗
NASA NTRS1981

Power Sources Conference, 29th, Atlantic City, NJ, June 9-12, 1980, Proceedings

Fuel systems are considered along with thermal batteries, primary batteries, lithium primary batteries, lithium/sulfur dioxide primary batteries, lithium/oxychloride primary batteries, high temperature secondary batteries, advanced secondary batteries, and nickel secondary batteries. Attention is given to a Ni-Fe battery with gas recombination device and state-of-charge indication, the development of the nickel-iron battery system for electric vehicle propulsion, improved lead-acid batteries, the behavior of the lead-acid batteries used to start the military vehicles at low temperatures, a life cycle energy analysis of the lead-acid battery, and the anodic corrosion of fiber reinforced lead composites for use in lead-acid submarine batteries. A description is presented of the key physical characteristics for predicting Zr powder burn times, the production of zirconium metal powder for rapid rise time thermal battery application, and high rate lithium-iron disulfide batteries.

Source record↗
NASA NTRS1983

Electrolyte Reservoir Would Lengthen Cell Life

Controlled-capillary sump supplies proper amount of electrolyte during cell operation. Releases electrolyte to compensate for electrolyte that empties from electrodes and separators: thus extending operating life of electrochemical cells that depend on recombination of gases in sealed condition without undue pressure buildup.

Thaller, L.↗
NASA NTRS1981

Moderate temperature detector development

P-side backside reflecting constant, photodiode characterization, and photodiode diffusion and G-R currents were investigated in an effort to develop an 8 m to 12 m infrared quantum detector using mercury cadmium telluride. Anodization, phosphorus implantation, and the graded band gap concept were approaches considered for backside formation. Variable thickness diodes were fabricated with a back surface anodic oxide to investigate the effect of this surface preparation on the diffusion limited zero bias impedance. A modeling technique was refined to thoroughly model diode characteristics. Values for the surface recombination velocity in the depletion region were obtained. These values were improved by implementing better surface damage removal techniques.

Marciniec, J. W.↗
NASA NTRS1982

Pulsed radiolysis of model aromatic polymers and epoxy based matrix materials

Models of primary processes leading to deactivation of energy deposited by a pulse of high energy electrons were derived for epoxy matrix materials and polyl-vinyl naphthalene. The basic conclusion is that recombination of initially formed charged states is complete within 1 nanosecond, and subsequent degradation chemistry is controlled by the reactivity of these excited states. Excited states in both systems form complexes with ground state molecules. These excimers or exciplexes have their characteristics emissive and absorptive properties and may decay to form separated pairs of ground state molecules, cross over to the triplet manifold or emit fluorescence. ESR studies and chemical analyses subsequent to pulse radiolysis were performed in order to estimate bond cleavage probabilities and net reaction rates. The energy deactivation models which were proposed to interpret these data have led to the development of radiation stabilization criteria for these systems.

Gupta, A.↗