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At least 1,189 records · Page 66

Identified charged-hadron production in 𝑝+Al, 3 He + Au, and Cu + Au collisions at $\sqrt{s_{NN}}$ = 200 GeV and in U + U collisions at $\sqrt{s_{NN}}$ = 193 GeV

The PHENIX experiment has performed a systematic study of identified charged-hadron (𝜋 ± , 𝐾 ± , 𝑝, $\bar{𝑝}$) production at midrapidity in 𝑝 + Al, 3 He + Au, and Cu + Au collisions at $\sqrt{s_{NN}}$ = 200 GeV and U + U collisions at $\sqrt{s_{NN}}$ = 193 GeV. Identified charged-hadron invariant transverse-momentum (𝑝 𝑇 ) and transverse-mass (𝑚 𝑇 ) spectra are presented and interpreted in terms of radially expanding thermalized systems. The particle ratios of 𝐾/𝜋 and 𝑝/𝜋 have been measured in different centrality ranges of large (Cu + Au and U + U) and small (𝑝 + Al and 3 He + Au) collision systems. The values of 𝐾/𝜋 ratios measured in all considered collision systems were found to be consistent with those measured in 𝑝+𝑝 collisions. However, the values of 𝑝/𝜋 ratios measured in large collision systems reach the values of ≈0.6, which is a factor of ≈2 larger than in 𝑝 + 𝑝 collisions. These results can be qualitatively understood in terms of the baryon enhancement expected from hadronization by recombination. Identified charged-hadron nuclear-modification factors (𝑅 𝐴⁢𝐵 ) are also presented. Enhancement of proton 𝑅 𝐴⁢𝐵 values over meson 𝑅 𝐴⁢𝐵 values was observed in central 3 He + Au, Cu + Au, and U + U collisions. Finally, the proton 𝑅 𝐴⁢𝐵 values measured in the 𝑝 + Al collision system were found to be consistent with 𝑅 𝐴⁢𝐵 values of 𝜙, 𝜋 ± , 𝐾 ± , and 𝜋 0 mesons, which may indicate that the size of the system produced in 𝑝 + Al collisions is too small for recombination to cause a noticeable increase in proton production.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Discrimination of electronic recoils from nuclear recoils in two-phase xenon time projection chambers

We present a comprehensive analysis of electronic recoil vs. nuclear recoil discrimination in liquid/gas xenon time projection chambers, using calibration data from the 2013 and 2014-16 runs of the Large Underground Xenon (LUX) experiment. We observe strong charge-to-light discrimination enhancement with increased event energy. For events with S1 = 120 detected photons, i.e. equivalent to a nuclear recoil energy of ~100 keV, we observe an electronic recoil background acceptance of <10 –5 at a nuclear recoil signal acceptance of 50%. We also observe modest electric field dependence of the discrimination power, which peaks at a field of around 300 V/cm over the range of fields explored in this study (50-500 V/cm). In the WIMP search region of S1 = 1-80 phd, the minimum electronic recoil leakage we observe is (7.3 ± 0.6) 10 –4 , which is obtained for a drift field of 240-290 V/cm. Pulse shape discrimination is utilized to improve our results, and we find that, at low energies and low fields, there is an additional reduction in background leakage by a factor of up to 3. We develop an empirical model for recombination fluctuations which, when used alongside the Noble Element Scintillation Technique (NEST) simulation package, correctly reproduces the skewness of the electronic recoil data. We use this updated simulation to study the width of the electronic recoil band, finding that its dominant contribution comes from electron-ion recombination fluctuations, followed in magnitude of contribution by fluctuations in the S1 signal, fluctuations in the S2 signal, and fluctuations in the total number of quanta produced for a given energy deposition.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Decay of multiple dark matter particles to dark radiation in different epochs does not alleviate the Hubble tension

Decaying cold dark matter (CDM) has been considered as a mechanism to tackle the tensions in the Hubble expansion rate and the clustering of matter. However, polarization measurements of the cosmic microwave background (CMB) severely constrain the fraction of dark matter decaying before recombination, and lensing of the CMB anisotropies by large-scale structure sets strong constraints on dark matter decaying after recombination. Together, these constraints make an explanation of the Hubble tension in terms of decaying dark matter unlikely. In response to this situation, we investigate whether a dark matter ensemble with CDM particles decaying into free streaming dark radiation in different epochs can alleviate the problem. We find that it does not.

79 ASTRONOMY AND ASTROPHYSICS↗

Forecasting ground-based sensitivity to the Rayleigh scattering of the CMB in the presence of astrophysical foregrounds

The Rayleigh scattering of cosmic microwave background (CMB) photons off the neutral hydrogen produced during recombination effectively creates an additional scattering surface after recombination that encodes new cosmological information, including the expansion and ionization history of the universe. A first detection of Rayleigh scattering is a tantalizing target for next-generation CMB experiments. We have developed a Rayleigh scattering forecasting pipeline that includes instrumental effects, atmospheric noise, and astrophysical foregrounds (e.g., Galactic dust, cosmic infrared background, or CIB, and the thermal Sunyaev-Zel'dovich effect). We forecast the Rayleigh scattering detection significance for several upcoming ground -based experiments, including SPT-3G+, Simons Observatory, CCAT-prime, and CMB-S4, and examine the limitations from atmospheric and astrophysical foregrounds as well as potential mitigation strategies. When combined with Planck data, here we estimate that the ground-based experiments will detect Rayleigh scattering with a significance between 1.6 and 3.7, primarily limited by atmospheric noise and the CIB.

79 ASTRONOMY AND ASTROPHYSICS↗

Thermal effects mediating the flow induced by laser-induced optical breakdown

Here, a short focused laser pulse can generate a hot plasma, which expands then contracts and can eject a hot jet, the speed and direction of which is sensitive to the details of the plasma kernel. The coupling of thermal and chemical nonequilibrium plasma mechanisms with this hydrodynamic development is assessed with detailed simulations of a two-temperature, three-species plasma model. Time scales for electron recombination, thermal relaxation, and diffusion are compared to that of the plasma expansion to anticipate conditions in which these mechanisms might affect the vorticity generation that leads to the ultimate flow pattern. The effect of these mechanisms are analyzed through comparison with corresponding inert-gas and equilibrium models. Thermal-nonequilibrium effects are found to be weak due to rapid relaxation of the heavy-particle and electronic temperatures. In contrast, chemical equilibration occurs at a rate comparable to the expansion and thereby enhance both it and subsequent hydrodynamic mechanisms as the energy stored in ion formation during the preceding breakdown is released by electron recombination. Thermal conduction, enhanced by high-temperature free electrons, weakens the ejection.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

First Simultaneous Acceleration of Multiple Charge States of Heavy Ion Beams in a Large-Scale Superconducting Linear Accelerator

Experimental studies of the simultaneous acceleration of three-charge-state 129 Xe 49+,50+,51+ beam from 17 to 180 MeV/nucleon in a superconducting linear accelerator are presented. The beam parameters for each individual- and multiple-charge-state beam were measured and compared with the particle tracking simulations. Detailed measurements were performed to characterize the multiple-charge-state beam’s recombination after a second-order achromat and isopath 180° bending system. As a result of the recombination of three charge states in the six-dimensional phase space, the xenon beam intensity was increased by 2.5-fold compared to the single-charge-state beam. Lastly, the results presented in the Letter fully validate the possibility to produce and utilize high-quality multiple-charge-state heavy-ion beams in a large-scale superconducting linac to increase the available beam power on an isotope production target.

43 PARTICLE ACCELERATORS↗

Signatures of Multiband Effects in High-Harmonic Generation in Monolayer MoS 2

High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS 2 , as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally observe a prominent angular shift of the parallel-polarized odd harmonics for energies above approximately 3.5 eV, and our calculations indicate that this shift originates in subtle differences in the recombination dipole strengths involving multiple conduction bands. Further, this observation is material specific and is in addition to the angular dependence imposed by the dynamical symmetry properties of the crystal interacting with the laser field, and may pave the way for probing the vectorial character of multiband recombination dipoles.

2-dimensional systems↗

Quantum-Path-Resolved Attosecond High-Harmonic Spectroscopy

Strong-field ionization of molecules releases electrons which can be accelerated and driven back to recombine with their parent ion, emitting high-order harmonics. This ionization also initiates attosecond electronic and vibrational dynamics in the ion, evolving during the electron travel in the continuum. Revealing this subcycle dynamics from the emitted radiation usually requires advanced theoretical modeling. Here we show that this can be avoided by resolving the emission from two families of electronic quantum paths in the generation process. The corresponding electrons have the same kinetic energy, and thus the same structural sensitivity, but differ by the travel time between ionization and recombination-the pump-probe delay in this attosecond self-probing scheme. We measure the harmonic amplitude and phase in aligned CO 2 and N 2 molecules and observe a strong influence of laser-induced dynamics on two characteristic spectroscopic features: a shape resonance and multichannel interference. This quantum-path-resolved spectroscopy thus opens wide prospects for the investigation of ultrafast ionic dynamics, such as charge migration.

74 ATOMIC AND MOLECULAR PHYSICS↗

Bright trion emission from semiconductor nanoplatelets

The trion, a quasiparticle comprising one exciton and an additional charge carrier, offers unique opportunities for generating spin-photon interfaces that can be used in developing quantum networks. Trions are also actively sought after for integrated optoelectronic devices including photovoltaics, photodetectors, and spintronics. However, formation of trions in strongly confined low-dimensional materials is often deemed detrimental. This is because trion emission in such materials is typically prohibited due to the predominant nonradiative Auger recombination processes. Semiconductor nanoplatelets with their strong confinement in the thickness direction and extended lateral geometries exhibit large exciton coherence sizes and reduced carrier-carrier interactions that may enable unprecedented trion properties. In this paper, we perform optical spectroscopic studies of individual CdSe nanoplatelets at cryogenic temperatures and observe bright trion emission with intensities comparable to that of neutral exciton emission. We perform carrier dynamics studies of the nanoplatelets and find that due to their extended lateral geometry, the fast radiative decay rate of the nanoplatelets at cryogenic temperatures is comparable to the inhibited Auger recombination rate, leading to the bright trion emission. Our tight-binding theory further reveals distinct size-tunable trion emission in the nanoplatelets that is advantageous for efficient trion emission. These properties make semiconductor nanoplatelets potential candidates as photon sources for optoelectronic and quantum logic devices.

36 MATERIALS SCIENCE↗

Reduction of bright exciton lifetimes by radiation-induced disorder

Quantum-radiative decay is a fundamental process in many optoelectronic systems such as laser diodes and solar cells. The bright exciton lifetime is a critical factor in determining the performance of these systems. Motivated by the ever-increasing need for laser systems in space and nuclear applications, we develop a many-particle approach to predict the radiative lifetime under harsh radiation environments. Here, using GaAs as a model system, we find that radiation-induced band tailing reduces the bright exciton lifetime. This result shows that the efficiency of radiative recombination, in addition to nonradiative recombination, can be affected by ionization radiation. Our approach enables a detailed understanding of the interplay between correlation, localization, and radiation that affect the performance of gain media.

36 MATERIALS SCIENCE↗

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al 2 O 3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al 2 O 3 layers prior to MoOx deposition, and the thermal history of the completed Al 2 O 3 /MoO x stacks were also investigated. When an SiO x /Al 2 O 3 passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoO x direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm 2 . Finally, the data demonstrate the capability of ultrathin Al 2 O 3 to improve Si/MoO x contact properties and may be of interest in the design of future Si heterojunctions.

14 SOLAR ENERGY↗

Degradation of Monocrystalline Silicon Photovoltaic Modules From a 10-Year-Old Rooftop System in Florida

A system of 180 monocrystalline aluminum back-surface field modules were installed in Cocoa, Florida, for 10 years. In total, 156 modules are characterized and compared to 3 controls. Power degradation rates vary between – 0.14% to – 3.22% per year, with median and average rates of –0.92% and –1.05% per year, respectively. The losses are primarily resistive with minor optical and recombination loss contributions. Electroluminescence imaging shows a characteristic pattern, which is shown to be resistive in nature when compared to photoluminescence. Resistive losses are due to corrosion of the rear contact Ag/solder interface and, to a much lesser degree, gridline Ag oxidation. Moisture ingress through the backsheet is likely responsible for mediating corrosion. Optical losses are due mostly to a combination of antireflection coating degradation, minor encapsulant browning, and delamination. Minor front contact corrosion may contribute to recombination. Furthermore, this study expands upon previous work on this vintage of the module by examining a large sample set, comprehensive characterization including techniques not previously used on these modules, and a comparison between two other systems of different climates.

14 SOLAR ENERGY↗

Doped GaInAs/GaP Quantum Well Superlattice Solar Cells With 27.5% Efficiency

Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. Finally, we show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.

13 HYDRO ENERGY↗

Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films

We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 10^15 ~10^18 /cm 3 . We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-um to a few um and concentration variation of one order of magnitude (low 10^16 to low 10^17 /cm 3 ). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge - thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.

14 SOLAR ENERGY↗

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC1 2 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC1 2 temperature.

cadmium telluride thin films↗

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Al2O3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al2O3 /Cd(Se,Te)/Al2O3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

CdTe↗