Performance of vacuum plasma spray and HVOF bond coatings at 900° and 1100 °C
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Lance, M. J. (ORCID:0000000151675452)↗
SEARCH · Engineering Papers
Results for “RESIDUAL STRESS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effect of APS flash bond coatings and curvature on TBC performance on rod specimens
The addition of an air plasma sprayed (APS) “flash” bond coating layer on top of a high velocity oxy-fuel (HVOF) bond coating greatly extended the lifetime of APS yttria stabilized zirconia (YSZ) thermal barrier coatings (TBC) on rod specimens of superalloy 247 tested using 100-h cycles in air+10%H 2 O at 1100 °C. The flash bond coatings of both NiCoCrAlY and NiCoCrAlYHfSi powder were compared to an HVOF-only and a vacuum plasma sprayed (VPS) NiCoCrAlYHfSi bond coating. Here, the flash coatings appear to form a mixed oxide-metal zone, which likely inhibits crack formation and therefore extends lifetime compared to conventional bond coatings. The underlying dense HVOF layer appeared to act as a source of Al for this intermixed zone and prevented the oxide from penetrating deeper into the bond coating. Residual stress in the thermally-grown Al 2 O 3 scale was measured using photo-luminescence piezospectroscopy (PLPS) as a function of time for each coating variation, including a comparison of concave and convex surfaces on a specially designed rod.
36 MATERIALS SCIENCE↗
Microstructural and nanomechanical studies of PVD Cr coatings on SiC for LWR fuel cladding applications
The microstructure and nanomechanical properties of pure Cr coatings deposited on SiC with various physical vapor deposition (PVD) methods have been investigated for the mitigation of hydrothermal corrosion of SiC-SiC f (SiC fiber-reinforced SiC matrix) composite fuel cladding in light water reactors (LWR). Cr coatings (4–7 μm thick) were deposited on unbiased SiC substrates using six variants of magnetron sputtering processes: (i) standard (S-DCMS), (ii) pulsed (P-DCMS), (iii) ion-assisted (I-DCMS), and (iv) pulsed ion-assisted direct current magnetron sputtering (PI-DCMS), (v) high-power impulse magnetron sputtering (HiPIMS), and (vi) bipolar HiPIMS (B-HiPIMS). Microstructural characterization and nanoindentation testing were used to evaluate effects of deposition technique on coating microstructure and nanomechanical properties. The application of positive reverse pulses to the sputter target induced coarsening of the columnar grain structure, while ion bombardment of substrates during deposition promoted densification of the coating microstructure. Both effects are exemplified in B-HiPIMS deposition, resulting in a high-density microstructure with compressive residual stress. Material pile-up around nano-indents and plastic work during nanoindentation were analyzed to understand deformation behavior of the coatings. Finally, the results suggest the B-HiPIMS process to be among the promising methods for the deposition of Cr coatings on SiC-SiC f for LWR cladding application.
36 MATERIALS SCIENCE↗
Effects of growth rate and dynamic substrate tilt on properties of Au-Ta alloy films deposited by high-power impulse magnetron sputtering
Gold-tantalum (Au—Ta) alloys are promising for next-generation hohlraums for magnetically-assisted indirect-drive inertial confinement fusion. Hohlraum fabrication involves sputter deposition of ultrathick coatings on sphero-cylindrical substrates. The control of physical properties of such coatings remains a challenge. Here, in this work, we systematically study effects of the growth rate and dynamic substrate tilt on properties of AuTa 4 films deposited onto rotating planar substrates mounted at different tilt angles to mimic different regions of the sphero-cylindrical surface of a hohlraum. We use high-power impulse magnetron sputtering (HiPIMS) in the constant charge per pulse mode with a pulse duration of 100 μs, a charge per pulse of 190 μC, a peak target current of about 3 A, and the pulse frequency varied in the range of 400–1400 Hz. The Langmuir probe, mass-resolved ion energy spectrometry, and optical emission spectroscopy are used to monitor plasma discharge characteristics in order to isolate and study effects of the growth rate. The deposition rate and the ballistics and energetics of depositing species are estimated by Monte Carlo simulations. Results show that the film microstructure, crystallographic phase, residual stress, and electrical resistivity strongly depend on both the deposition rate and substrate tilt, highlighting their critical role in tailoring properties of Au—Ta films during hohlraum fabrication.
36 MATERIALS SCIENCE↗
Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating
Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorous concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.
14 SOLAR ENERGY↗
Effects of particle inclusions on cracking in ultrathin barrier films
Here, the effects of particle inclusions with different mechanical properties on the development of cracks in ultra-thin barrier films have been studied. Two types of particles, alumina and poly(styrene-b-methyl methacrylate) with large differences in their elastic modulus were used, representing both hard and soft inclusions. Particles were seeded onto polyethylene naphthalate substrates and subsequently coated with atomic layer deposited Al 2 O 3 as a barrier film. Ca corrosion tests used to determine the performance of the barrier films revealed that soft polymer particle inclusions severely affect the development of cracking in barrier films as compared to stiff ceramic particles. Tensile tests also confirmed that the barrier films with polymer particle inclusions have the lowest value of critical onset strain. Parametric simulations, conducted by varying the elastic modulus of the particle inclusions over a wide range, resulted in a larger strain energy release rate near particle inclusions which promotes crack formation and negatively impacts the performance of barrier films with softer particle inclusions. Thus, the combination of high residual stresses in the barrier films with the presence of soft particle inclusions is found the most detrimental for the development of high-performance ultrathin barrier films.
36 MATERIALS SCIENCE↗
Tribological performance of monolithic copper thin films during nanowear
Mathematical models suggest that the strain along the film formed by parallel passes of a nanoindentation probe in contact with the film can be either homogenous or heterogeneous, depending on contact pressure and spacing between passes. Here, in this study, a 1 µm copper thin film was worn with a cono-spherical diamond probe with normal loads ranging from 25 to 800 µN and wear box edge lengths of 40, 60, and 80 µm. The nanoindenter counterface was rastered across the surface to mimic dry sliding wear. To determine potential strain field changes, 10-step quasi-static indents (200–2000 µN) were performed using nanoindentation inside the wear boxes created at various loads to determine if a strain field alteration could be observed in changes in hardness of the copper thin film. It was shown that there was a softening effect in the hardness for normal loads < 400 µN used during nanowear compared to the as-deposited copper. Normal loads ≥ 400 µN had a similar or higher hardness than the as-deposited copper. This is believed to have occurred due to a relaxation in the residual stresses created during deposition in the copper thin films at lower loads, which caused a decrease in hardness. Conversely, at the higher loads, increased deformation leads to an increase in hardness. Lastly, all of the wear boxes displayed a higher estimated strain hardening exponent than the as-deposited material.
36 MATERIALS SCIENCE↗
Rapid Solidification Effects in Additively Manufactured Si and SiGe Compositions
SiGe alloys have a proven track record as robust high-temperature thermoelectric materials, powering NASA missions like SNAP-10A, LES-9, and Voyager 1 and 2. Enhancing thermoelectric efficiency hinges on minimizing thermal conductivity while preserving electrical conductivity. Rapid solidification via LPBF can generate microstructural features such as subgrain cellular boundaries and twinning, which may help reduce thermal conductivity while preserving semiconducting behavior. Here, this study investigates the potential of laser powder bed fusion (LPBF) additive manufacturing to fabricate nanostructured Si and SiGe thermoelectric materials. High cooling rates (10 5 to 10 7 K/s) rates inherent to the LPBF process are conducive to forming such nanostructures. Moreover, this fabrication technique could also be suitable for fabricating complex geometries needed to achieve improved device level performance. Process mapping of commercial Si powder with irregular morphology was first performed to understand the LPBF processing behavior of this semiconductor material. Subsequent studies included in-house synthesized B-doped (p-type) Si7 8 Ge 22 spherical powder that was produced via ultrasonic atomization. Scan strategies involved multiple laser exposures to mitigate solidification cracking: a high density of >98% was achieved, but solidification cracking could not be fully eliminated. Subsequently, a high electrical resistivity (i.e., low conductivity) was observed, but the measured Seebeck coefficient, ∼230 μV/K @ 500 °C, proved that good semiconductor material was being fabricated. A subgrain cellular structure (5–10 μm) was observed as defined by Ge segregation to the intercellular boundaries. The remelting strategies helped lower the cooling rates in processing SiGe, but this still resulted in high residual stresses, which induced a remarkably high density of twins (78–95%) to accommodate the deformation. This unique grain structure offers an avenue for phonon scattering and potential improvements in thermoelectric performance.
figure of merit↗
Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling
The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN’s performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m 2 K/GW at the diamond/Si 3 N 4 /GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within ~1 nm of the GaN channel layer without degrading the channel’s electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 μm and a ~1.9 μm lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Transient behavior of oxide fuels with controlled microstructure and Cr2O3 additive
Abstract Microstructure and Cr 2 O 3 doping profoundly impact the thermal-mechanical properties and fracture of oxides fuels. It is a challenge to study the transient behavior of nuclear fuels under loss-of-coolant-event (LOCA). In this study, the crack behavior of UO 2 pellets with controlled grain structure and Cr 2 O 3 doping was tested with rapid power ramping (300−900 °C per min) mimicking a prototypical LOCA heating profile. Dense micron-sized UO 2 pellets display well-maintained integrity without cracking with the ramping up to 1500 °C at a heating rate of 8 °C per second. Fracture occurs in both pure and Cr 2 O 3 -doped dense nano-sized UO 2 pellets. The Cr 2 O 3 doped oxide fuel pellet with a larger grain size (~ 22.2 μm) displays the best performance under LOCA testing due to its highest thermal conductivity under high temperature. FEA calculations suggest a temperature gradient across the fuel pellet during transient testing, resulting in residual stress and cracking, which can be correlated with their thermal-mechanical properties.
Zhao, Dong (ORCID:0000000191377257)↗
Laser shock peening on Zr-based bulk metallic glass and its effect on plasticity: Experiment and modeling
The Zr-based bulk metallic glasses (BMGs) are a new family of attractive materials with good glass-forming ability and excellent mechanical properties, such as high strength and excellent wear resistance, which make them candidates for structural and biomedical materials. Although the mechanical behavior of BMGs has been widely investigated, their deformation mechanisms are still poorly understood. In particular, their poor ductility significantly impedes their industrial application. In the present work, we show that the ductility of Zr-based BMGs with nearly zero plasticity is improved by a laser shock peening technique. Moreover, we map the distribution of laser-induced residual stresses via the micro-slot cutting method, and then predict them using a three dimensional finite-element method coupled with a confined plasma model. Reasonable agreement is achieved between the experimental and modeling results. The analysis of serrated flow reveals plentiful and useful information of the underlying deformation process. As a result, our work provides an easy and effective way to extend the ductility of intrinsically-brittle BMGs, opening up wider applications of these materials.
36 MATERIALS SCIENCE↗
Crystallization kinetics of rapid spray plasma processed multiple cation perovskites in open air
Rapid Spray Plasma Processing (RSPP) is a high throughput, scalable, and open-air route toward manufacturing perovskite solar modules. The plasma exposure is dosed such that the perovskite precursor solution is cured in milliseconds using a combination of rapid heating, reactive species, and UV photons. We implemented in situ wide angle X-ray scattering (WAXS) to characterize the crystal growth in multiple cation, mixed halide perovskite thin films—Cs x (MA z FA 1-z ) 1-x Pb(Br 0.17 I 0.83 ) 3 for 0.05 ≤ x ≤ 0.25—fabricated in open air. The use of synchrotron radiation and high detector speeds resolved the formation and dissolution of a transient intermediate crystalline phase during the tens of milliseconds when the perovskite crystallized. Increasing the mole fraction of cesium and methylammonium resulted in a decrease in the intermediate phase and an increase in the average grain diameter. Increasing the cesium fraction suppressed phase segregation, as observed in photoluminescence. Calculations showed the refractive index decreased and the extinction coefficient increased with cesium fraction. Based on the rapid crystallization kinetics, RSPP perovskite films exhibit residual stress values >5× lower than spin coated films. Understanding the kinetics of perovskite formation enables the design of perovskite films with improved thermomechanical and operational stability.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Non-destructive evaluation of degradation in EB-PVD thermal barrier coatings by infrared reflectance spectroscopy
At room temperature and atmospheric conditions infrared reflectance spectroscopy and X-ray diffraction were employed for the detection of the phase transformation and residual stress within thermal barrier coatings (TBC). The TBC's samples initially consisted of the porous ceramic topcoat deposited by electron beam plasma vapor deposition, a bond coat and a superalloy substrate. Reflectance spectroscopy scans were performed from 7497 cm{sup -1} to 68 cm{sup -1} to analysis the fingerprint region as well as the chemical bonding region. These regions should indicate if a detectable change within the TBC response is a result of thermal degradation of the microstructure and the changes in yttrium dispersion throughout the yttrium stabilized zirconium. The thermal degradation was induced by thermal cycling the samples to 1100 Degree-Sign C and then cooling them in an atmospheric environment. X-ray diffraction was also used to detect the phase composition within the TBC samples and see if either would clearly identify failure prior to actual spallation. The eventual measurability and quantify-ability of the phase changes within the TBC's may be used as an effective non-destructive evaluation (NDE) technique that would allow personnel in the field to know when servicing of the turbine blade was necessary.
36 MATERIALS SCIENCE↗
Controlled exfoliation of (100) GaAs-based devices by spalling fracture
The importance of exfoliation techniques increases as the semiconductor industry progresses toward thinner devices as a way to reduce material costs and improve performance. Here, the controlled spalling technique is a recently developed substrate removal process that utilizes the physics of fracture to create wafer cleavage parallel to the surface at a precise depth. In this letter, we apply principles of linear elastic fracture mechanics to predict the process conditions needed to exfoliate (100) GaAs of a desired thickness. Spalling can be initiated in a controllable manner, by depositing a stressor film of a residual stress value just below the threshold value to induce a spontaneous spall. Experimental data show process window requirements to controllably spall (100) GaAs. Additionally, experimental spall depth in (100) GaAs compares well to spalling mechanics predictions when the effects of wafer thickness and modulus are considered. To test spalled material quality, III-V single junction photovoltaic devices are lifted off of a (100)-GaAs substrate by spalling methods and electrical characteristics are recorded. No degradation is observed in the spalled device, illustrating the potential of this method to rapidly produce thin, high quality devices.
14 SOLAR ENERGY↗
Current-induced surface roughness reduction in conducting thin films
Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film’s wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. In conclusion, the modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.
36 MATERIALS SCIENCE↗
Direct metal writing: Controlling the rheology through microstructure
Most metal additive manufacturing approaches are based on powder-bed melting techniques such as laser selective melting or electron beam melting, which often yield uncontrolled microstructures with defects (e.g., pores or microcracks) and residual stresses. Here, we introduce a proof-of-concept prototype of a 3D metal freeform fabrication process by direct writing of metallic alloys in the semi-solid regime. This process is achieved through controlling the particular microstructure and the rheological behavior of semi-solid alloy slurries, which demonstrate a well suited viscosity and a shear thinning property to retain the shape upon printing. Furthermore, the ability to control the microstructure through this method yields a flexible manufacturing route to fabricating 3D metal parts with full density and complex geometries.
36 MATERIALS SCIENCE↗
Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets
A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4 , matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.
36 MATERIALS SCIENCE↗
Oblique angle deposition of boron carbide films by magnetron sputtering
Many applications of boron carbide (B4C) films entail deposition on non-planar substrates, necessitating a better understanding of oblique angle deposition phenomena. Here, we systematically study the effect of substrate tilt on properties of B 4 C films with thicknesses up to 10 μm deposited by direct current magnetron sputtering. Results show that all films are amorphous and columnar with an average column width of ~100 nm, independent of substrate tilt. Column tilt angles are limited to ~20° even for substrate tilt of 80°. Film density, residual stress, and the refractive index weakly (within ≲20%) depend on substrate tilt. Furthermore, oxygen impurities bond preferentially with carbon atoms in inter-columnar regions. Substrate tilt has a major effect on mechanical properties that decrease by ~50%, suggesting weak interconnection between nano-columns. Implications of these observations for the deposition onto non-planar substrates are discussed.
36 MATERIALS SCIENCE↗