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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This section of the short course discusses radiation effects in semiconductor devices. This is a broad topic, and it is not possible to cover all aspects in a course of this length. The approach that will be used is to briefly review basic mechanisms and device responses, and to go into more detail for new topics such as latchup that have not been covered in as much detail in previous short courses.
This viewgraph presentation describes the magnetic device design and evaluation capabilities at the Center for Space Microelectronics Technology at the Jet Propulsion Laboratory. The capabilities start with supercomputers for design and simulation. Circuits can be examined via electrical flow and microscopic examination. These capabilities are useful for developing new devices, particularly for space applications.
We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.
Describes an effort to produce device-independent color on three types of devices: color monitors, high precesion color film recorder, and color printer using a dye sublimation process.
The deployment of mechanical systems in space flight is often accomplished with pyrotechnic devices. The activation element of a pyrotechnic device is a squib, such as the NASA Standard Initiator (NSI).
We report the use fo delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50-1500 eV energy range. These are the first measurements with a solid state device to detect electrons in this energy range.
Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.
Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
Improvement of the performance of an AMTEC device requires improvement and development of components as well as of device geometry and construction.
Electroactive polymers, especially electromechanically active polymers, have drawn extensive attention worldwide since the piezoelectricity and ferroelectricity of poly (vinylidene fluoride) (PVDF) was discovered in 1969. In the past three decades, several new classes of electroactive polymers that demonstrate promising electromechanical properties have been developed. Electrostrictive Graft Elastomers (G-elastomer) developed at NASA Langley Research Center have been recognized as one of the more promising electroactive polymers due to their large electric field-induced strain (~4%) and high mechanical modulus (~700 MPa). Electromechanical performance of the G-elastomer is a promising class of electroactive polymer materials because it exhibits a novel molecular mechanism that allows enhancement in the field induced strain and in the mechanical modulus synergistically. The combination of large induced strain and high mechanical modulus allows the electrostrictive graft elastomer to offer very promising electromechanical properties, in terms of output mechanical energy density, making it plausible as a candidate for use in high performance and low mass actuation devices in various aerospace applications. In this presentation, the molecular structures, properties, processing and mechanisms of the electromechanical performance, as well as its applications in actuation devices for advanced aerospace technologies, will be comprehensively reviewed and discussed.
This paper presents an aeroelastic trim drag optimization study of the Mach 0.8 Transonic Truss-Braced Wing (TTBW) aircraft using the High-lift devices and control surfaces. An aero-structural analysis solver VSPAERO with transonic small disturbance, integral boundary-layer, and wing-strut interference corrections coupled to mode shapes computed by NASTRAN using the Galerkin method is developed to provide a rapid aircraft aeroelastic performance evaluation. Three different flight conditions corresponding to Mach 0.8 are selected for the aeroelastic trim drag optimization at the design and off-design cruise lift coefficients. The preliminary optimization results show that the TTBW aircraft with the optimized deflection of the high-lift devices and control surfaces achieves a drag reduction of about 8.2 counts, 6.5 counts, and 9.7 counts corresponding to the lift coefficients 0.661, 0.695, and 0.729, respectively. A high-fidelity CFD solver FUN3D is used to verify the aeroelastic trim drag optimization.
The use of cryogenic propellants has and will continue to play an integral role in manned-space exploration due the high specific impulses offered and its ubiquity through in-situ resource utilization. But guaranteeing vapor-free transfer of such low-surface tension liquids is difficult for traditional capillary-action propellant management devices (PMDs). Screen-channel liquid acquisition devices and compliant origami bladders are potential solutions, but to quantify the benefits these technologies offer, this paper present a cast study analyzing the performance metrics of an orthodox vane PMD as a benchmark for comparison. A 0.15 m3 liquid hydrogen tank at 20.3 K and 103 kPa was selected for study. Then assuming no body forces and no heat transfer (for simplicity), a steady-state 1-D differential equation was numerically solved in tandem with four possible wetted area configurations to yield an expulsion efficiency for a theoretically maximum inputted expulsion flow rate. Maximization of the flow rate was constrained by the onset of choked flow. Additional inputs, including vane height and vane number, were parametrically varied between 0.1 – 10 cm and 4 – 28 vanes, respectively.
Material degradation during the fabrication of microelectronic devices has plagued the space industry for many years owing to the layering of many dissimilar metals to create these devices. Often, commonly used materials and systems are overlooked as potential sources of material degradation. This technical bulletin highlights extensive research to isolate probable causes of this degradation.
Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.
Abstract The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event‐driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co‐design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware‐based probabilistic computing technologies.
Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.
Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.