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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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New automatic-level-control circuit protects against signal "overshoot." Zener diodes and series capacitors prevent voltage spikes (caused by sudden increase in input level) from appearing at output. When spike voltage drops below breakdown voltage of Zener diodes, they turn off. Initial output level is determined by Zener breakdown voltage and capacitance of series capacitor.
A voltage regulated DC to DC converter uses an inductor and a capacitor as storage elements. The inductor is composed of two windings having a common junction. A transformer with a center tap connected to the common junction of the two windings is connected at either end of its winding to ground through controlled switches. One winding of the inductor and either end of the transformer winding are connected by power diodes to the capacitor which supplies the output voltage to a load. The other winding of the inductor is connected to a fourth power diode as a clamping diode. Input voltage is supplied to the inductor through a third controlled switch. A pulse width modulator connected to the output of the converter alternately closes and opens the switches connected to either end of the transformer winding and also closes the switch supplying input voltage to the inductor each time either of the switches connected to the ends of the transformer winding are closed. The duty cycle of the closing and opening of the several switches is adjusted by the pulse modulator to regulate the output voltage.
Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.
Contactless power transfer devices for transferring electrical power across a rotating spacecraft interface were studied. A power level of 100 KW was of primary interest and the study was limited to alternating current devices. Rotary transformers and rotary capacitors together with the required dc to ac power conditioning electronics were examined. Microwave devices were addressed. The rotary transformer with resonant circuit power conditioning was selected as the most feasible approach. The rotary capacitor would be larger while microwave devices would be less efficient. A design analysis was made of a 100 KW, 20 kHz power transfer device consisting of a rotary transformer, power conditioning electronics, drive mechanism and heat rejection system. The size, weight and efficiency of the device were determined. The characteristics of a baseline slip ring were presented. Aspects of testing the 100 KW power transfer device were examined. The power transfer device is a feasible concept which can be implemented using presently available technologies.
A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.
Samples of Mylar and Teflon film were exposed to combinations of monoenergetic electron and lithium ion fluxes in various ratios. The samples' discharge rates and strengths were found to diminish as the ion proportion increased. Various types of capacitors were exposed in air to beta irradiation from a 100 mCie Strontium-90 radioisotope source located at distances ranging from 2 cm to 5 cm from the capacitors. In these preliminary experiments, no evidence of spontaneous electrical breakdown was noted, nor was any change in RF impedance detectable using the available instrumentation. A decrease in DC resistance was noted, apparently due to radiation-induced conductivity. A cylindrical glass vacuum chamber is being assembled. Its inside dimensions are 44 cm diameter by 100 cm length. All necessary associated components and instruments have been acquired, including electron and ion guns, Trek surface potential probe and turbo-molecular pump. A mass-spectrometer detector for leaks and evolved gases will be ordered shortly.
An automatic level control circuit for an operational amplifier for minimizing spikes or instantaneous gain of the amplifier at a low period wherein no signal is received on the input is provided. The apparatus includes a multibranch circuit which is connected between an output terminal and a feedback terminal. A pair of zener diodes are connected back to back in series with a capacitor provided in one of the branches. A pair of voltage dividing resistors are connected in another of the branches and a second capacitor is provided in the remaining branch of controlling the high frequency oscillations of the operational amplifier.
The assessment of flywheel energy storage for spacecraft power system is based on the conceptual flywheel design. This conceptual design of an integrated flywheel is based on the Mechanical Capacitor which evolved from development of magnetic bearings and permanent magnet ironless-brushless DC motors. The mechanical capacitor is based on three key technologies: (1) a composite rotor with a low ID to OD ratio for high energy density (weight and volume); (2) magnetic suspension close to the geometric center of the rotating mass to minimize loads normally encountered on the ends of a shaft, a no-wear mechanism in a vacuum environment, and to minimize losses at high rotational speeds; (3) permanent magnet ironless-brushless DC motor/generator for high efficiency of conversion and low losses at high rotational speeds. The complete system would include the necessary electronics for the motor/generator, containment, and counterrotating wheels for attitude control compatibility.
Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.
An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.
Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.
Feedback amplifier circuit synthesizes electronically variable capacitance. Variable Synthetic Capacitor is amplifier circuit with follower/feedback configuration. Effective input capacitance depends on input set current. If synthetic capacitor is connected across resonant element of oscillator, oscillator frequency controlled via input set current. Circuit especially suitable for fine frequency adjustments of piezoelectric-crystal or inductor/capacitor resonant oscillators.
A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.
Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.
A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.
To investigate metal surface corrosion and the breakdown of metal protective coatings, the ac impedance method is applied to six systems of primer coated and primer topcoated 4130 steel. Two primers were used: a zinc-rich epoxy primer and a red lead oxide epoxy primer. The epoxy-polyamine topcoat was used in four of the systems. The EG and G-PARC Model 368 ac impedance measurement system, along with dc measurements with the same system using the polarization resistance method, were used to monitor changing properties of coated 4230 steel disks immersed in 3.5 percent NaCl solutions buffered at pH 5.4 over periods of 40 to 60 days. The corrosion system can be represented by an electronic analog called an equivalent circuit consisting of resistors and capacitors in specific arrangements. This equivalent circuit parallels the impedance behavior of the corrosion system during a frequency scan. Values for the resistors and capacitors, that can be assigned in the equivalent circuit following a least-squares analysis of the data, describe changes that occur on the corroding metal surface and in the protective coatings. Two equivalent circuits have been determined that predict the correct Bode phase and magnitude of the experimental sample at different immersion times. The dc corrosion current density data are related to equivalent circuit element parameters. Methods for determining corrosion rate with ac impedance parameters are verified by the dc method.
Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.
Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.