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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Origin of Active Oxygen in a Ternary CuO x /Co 3 O 4 –CeO 2 Catalyst for CO Oxidation

In this paper, we have studied CO oxidation over a ternary CuO x /Co 3 O 4 -CeO 2 catalyst and employed the techniques of N 2 adsorption/desporption, XRD, TPR, TEM, in situ DRIFTS and QMS (Quadrupole mass spectrometer) to explore the origin of active oxygen. DRIFTS-QMS results with labeled 18O2 indicate that the origin of active oxygens in CuO x /Co 3 O 4 -CeO 2 obeys a model, called as queue mechanism. Namely gas-phase molecular oxygens are dissociated to atomic oxygens and then incorporate in oxygen vacancies located at the interface of Co 3 O 4 -CeO 2 to form active crystalline oxygens, and these active oxygens diffuse to the CO-Cu + sites thanks to the oxygen vacancy concentration magnitude and react with the activated CO to form CO 2 . This process, obeying a queue rule, provides active oxygens to form CO 2 from gas-phase O 2 via oxygen vacancies and crystalline oxygen at the interface of Co 3 O 4 -CeO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Programmable catalysis by support polarization: elucidating and breaking scaling relations

The Sabatier principle and the scaling relations have been widely used to search for and screen new catalysts in the field of catalysis. However, these powerful tools can also serve as limitations of catalyst control and breakthrough. To overcome this challenge, this work proposes an efficient method of studying catalyst control by support polarization from first-principles. The results demonstrate that the properties of catalysts are determined by support polarization, irrespective of the magnitude of spontaneous polarization of support. The approach enables elucidating the scaling relations between binding energies at various polarization values of support. Moreover, we observe the breakdown of scaling relations for the surface controlled by support polarization. By studying the surface electronic structure and decomposing the induced charge into contributions from different atoms and orbitals, we identify the inherent structural property of the interface that leads to the breaking of the scaling relations. Specifically, the displacements of the underlying oxide support impose its symmetry on the catalyst, causing the scaling relations between different adsorption sites to break.

Chemical engineering↗
DOE OSTI2026

Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping

Tungsten diselenide (WSe 2 ) is a promising p-type semiconductor limited by high contact resistance (R C ) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe 2 to chloroform provides simple and stable p-type doping. In monolayer WSe 2 transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces R C to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10 10 at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic R C of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe 2 , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe 2 interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe 2 transistors with good p-type performance.

42 ENGINEERING↗
DOE OSTI2016

Liquid-solid joining of bulk metallic glasses

Here, we successfully welded two bulk metallic glass (BMG) materials, Zr 51 Ti 5 Ni 10 Cu 25 Al 9 and Zr 50.7 Cu 28 Ni 9 Al 12.3 (at. %), using a liquid-solid joining process. An atomic-scale metallurgical bonding between two BMGs can be achieved. The interface has a transition layer of ~50 μm thick. In conclusion, the liquid-solid joining of BMGs can shed more insights on overcoming their size limitation resulting from their limited glass-forming ability and then promoting their applications in structural components.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Study of Gd-doped Bi{sub 2}Te{sub 3} thin films: Molecular beam epitaxy growth and magnetic properties

Incorporation of magnetic dopants into topological insulators to break time-reversal symmetry is a prerequisite for observing the quantum anomalous Hall (QAHE) effect and other novel magnetoelectric phenomena. GdBiTe{sub 3} with a Gd:Bi ratio of 1:1 is a proposed QAHE system, however, the reported solubility limit for Gd doping into Bi{sub 2}Te{sub 3} bulk crystals is between ∼0.01 and 0.05. We present a magnetic study of molecular beam epitaxy grown (Gd{sub x}Bi{sub 1–x}){sub 2}Te{sub 3} thin films with a high Gd concentration, up to x ≈ 0.3. Magnetometry reveals that the films are paramagnetic down to 1.5 K. X-ray magnetic circular dichroism at the Gd M{sub 4,5} edge at 1.5 K reveals a saturation field of ∼6 T, and a slow decay of the magnetic moment with temperature up to 200 K. The Gd{sup 3+} ions, which are substitutional on Bi sites in the Bi{sub 2}Te{sub 3} lattice, exhibit a large atomic moment of ∼7 μ{sub B}, as determined by bulk-sensitive superconducting quantum interference device magnetometry. Surface oxidation and the formation of Gd{sub 2}O{sub 3} lead to a reduced moment of ∼4 μ{sub B} as determined by surface-sensitive x-ray magnetic circular dichroism. Their large atomic moment makes these films suitable for incorporation into heterostructures, where interface polarization effects can lead to the formation of magnetic order within the topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The effect of Argon ion irradiation on the thickness and structure of ultrathin amorphous carbon films

Carbon films synthesized by plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) exhibit a layered structure consisting of a bottom (interface) and a top (surface) layer rich in sp{sup 2} atomic carbon bonding and a middle (bulk) layer of much higher sp{sup 3} content. Because of significant differences in the composition, structure, and thickness of these layers, decreasing the film thickness may negatively affect its properties. In this study, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) were used to examine the effect of Ar{sup +} ion irradiation on the structure and thickness of ultrathin films of hydrogenated amorphous carbon (a-C:H) and hydrogen-free amorphous carbon (a-C) deposited by PECVD and FCVA, respectively. The TEM and EELS results show that 2-min ion irradiation decreases the film thickness without markedly changing the film structure and composition, whereas 4-min ion irradiation results in significant film thinning and a moderate decrease of the sp{sup 3} content of the bulk layer. This study demonstrates that Ar{sup +} ion irradiation is an effective post-deposition process for reducing the thickness and tuning the structure of ultrathin carbon films. This capability has direct implications in the synthesis of ultrathin protective carbon overcoats for extremely high-density magnetic recording applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Molecular insights into ionic liquid/aqueous interface of phosphonium based phase-separable ionic liquids

Phosphonium based phase-separable ionic liquids (PSILs) are promising green solvents for dissolution of cellulose and lignin, a necessary step for conversion of biomass to fuels and chemicals. The knowledge of interfacial behavior of ionic liquid/solvent systems is critical for designing efficient separation processes. Here, molecular dynamics simulations are carried out for aqueous interface of tetraalkylphosphonium ionic liquids with chloride and acetate as anions to investigate IL miscibility with water. The transition zone from miscible to immiscible behavior was observed for alkyl chain lengths of 6 to 8. Emulsion phase was observed for [P8888]+ ion and multiple IL/water interface was observed for [P12121212]+ phosphonium cation. IL/water interface is observed to be enriched with solvated anions with phosphorous atom oriented towards the aqueous phase. The potential of mean force calculations suggest that as the alkyl chain of the phosphonium cations increase, so does the driving force for aggregation of cations in the aqueous phase. Due to the difference in the molecular shape and size, anions are better solvated by the water molecules, and these ions diffuse into the aqueous phase. Furthermore, the analysis of selected pair interactions provides insights into the nature of intermolecular forces and the role of the alkyl side chains on the interfacial properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Experimental and modeling study of 1/ f noise in multilayer MoS2 and MoSe2 field-effect transistors

In field-effect transistors (FETs) with two-dimensional (2D) transition metal dichalcogenide channels, the dependence of field-effect mobility on atomic layer thickness has been studied and interpreted in terms of interface scattering and interlayer coupling resistance (Rint). However, a model for 1/f noise, such as in MoS2 and in MoSe2 FETs, for various contact metals and layer number thicknesses has not been reported. In this work, we have experimentally studied current–voltage and 1/f noise on MoS2 and MoSe2 FETs with source and drain contacts of high and low work function metals to understand both the mobility and the noise behavior. We have developed a noise model incorporating layer number dependent Hooge parameters and Rint. The noise and mobility models utilize screening lengths for charge, mobility, and Hooge parameter to describe the variation of these quantities with a layer number. Using our single model topology with appropriate fitting parameters for each material and each contact metal, the model captures the experimentally observed layer thickness dependence of the Hooge parameter. Our noise analysis is fully comprehensive and, hence, could be applied to any 2D layered systems.

Kwon, Jiseok↗
DOE OSTI2021

First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

Nano-membrane tri-gate β-gallium oxide (β-Ga 2 O 3 ) field-effect transistors (FETs) on SiO 2 /Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga 2 O 3 and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al 2 O 3 ) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec –1 , high drain current (I DS ) ON/OFF ratio of 1.5 × 10 9 , and negligible transfer characteristic hysteresis. Furthermore, we also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices

The radiation response of TaO x -based RRAM devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization damage from a 60 Co gamma source did not cause any changes in device resistance for either device type, up to 45 Mrad(Si). Displacement damage from a heavy ion beam caused the Set B in the high resistance state to decrease in resistance at 1 x 10 21 oxygen displacements per cm 3 ; meanwhile, the Set A devices did not exhibit any decrease in resistance due to displacement damage. Both types of devices exhibited an increase in resistance around 3 x 10 22 oxygen displacements per cm 3 , possibly due to damage at the oxide/metal interfaces. These extremely high levels of damage represent near-total atomic disruption, and if this level of damage were ever reached, other circuit elements would likely fail before the RRAM devices in this study. Overall, both sets of devices were much more resistant to radiation effects than other devices reported in the literature. Displacement damage effects were only observed in the Set A devices once the displacement-induced oxygen vacancies surpassed the intrinsic vacancy concentration in the devices, suggesting that high oxygen vacancy concentration played a role in the devices’ high tolerance to displacement damage.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Capacitance and conductance versus voltage characterization of Al{sub 2}O{sub 3} layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C

In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D{sub it}) ∼10{sup 11} eV{sup −1} cm{sup −2} could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N{sub fix}) around −2.5 × 10{sup 12} cm{sup −2}. At the substrate temperature of 150 °C, highest N{sub fix} (−2.9 × 10{sup 12} cm{sup −2}) and moderate D{sub it} (2.7 × 10{sup 11} eV{sup −1} cm{sup −2}) values were observed. The as deposited PE-ALD layer at RT shows both low D{sub it} in the range of (1 to 3) × 10{sup 11} eV{sup −1} cm{sup −2} and low N{sub fix} (−4.4 × 10{sup 11} cm{sup −2}) at the same time. The dependencies of N{sub fix}, D{sub it}, and relative permittivity on the substrate temperatures and its adjustability are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Structure and Dynamics of the Liver Receptor Homolog 1–PGC1 α Complex

Peroxisome proliferator-activated gamma coactivator 1-α (PGC1α) regulates energy metabolism by directly interacting with transcription factors to modulate gene expression. Among the PGC1α binding partners is liver receptor homolog 1 (LRH-1; NR5A2), an orphan nuclear hormone receptor that controls lipid and glucose homeostasis. Although PGC1α is known to bind and activate LRH-1, mechanisms through which PGC1α changes LRH-1 conformation to drive transcription are unknown. Here, we used biochemical and structural methods to interrogate the LRH-1–PGC1α complex. Purified, full-length LRH-1, as well as isolated ligand binding domain, bound to PGC1α with higher affinity than to the coactivator, nuclear receptor coactivator-2 (Tif2), in coregulator peptide recruitment assays. We present the first crystal structure of the LRH-1–PGC1α complex, which depicts several hydrophobic contacts and a strong charge clamp at the interface between these partners. In molecular dynamics simulations, PGC1α induced correlated atomic motion throughout the entire LRH-1 activation function surface, which was dependent on charge-clamp formation. In contrast, Tif2 induced weaker signaling at the activation function surface than PGC1α but promoted allosteric signaling from the helix 6/β-sheet region of LRH-1 to the activation function surface. These studies are the first to probe mechanisms underlying the LRH-1–PGC1α interaction and may illuminate strategies for selective therapeutic targeting of PGC1α-dependent LRH-1 signaling pathways.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

14 SOLAR ENERGY↗
DOE OSTI2022

Graph-theoretical KMC Framework for Calculating Effective Diffusivity in TPBAR Components: Effective Diffusivity of Tritium in α-Zr Grain Boundaries

We report the development of a computer simulation tool based on the Graph-theoretical kinetic Monte Carlo (GT-KMC) approach that can be used to simulate diffusion and derive effective diffusivity of species in complex structures of TPBAR components. The GT-KMC framework was implemented in AKSOME, an on-lattice self-learning kinetic Monte Carlo tool developed at PNNL and was previously used to study solute diffusion in metal alloys. This newly developed tool will be helpful in simulating atom diffusion and extracting their effective diffusivities in grain boundaries and interfaces in various TPBAR components. Once benchmarked, the tool will be used to simulate the diffusion of tritium (hydrogen) along grain boundaries in α-Zr using the activation energy barrier data previously obtained from Density Functional Theory calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electron Energy-Loss Spectroscopy and Differential Phase Contrast Imaging with Active Decision in Multimodal Electron Microscopy: Isotopic detection at the atomic scale

Isotopic engineering provides a powerful route to control phonon behavior in crystalline solids, enabling fundamental studies of lattice dynamics and heat transport at the atomic scale. Here, we directly visualize isotope-dependent phonon propagation in epitaxial Cr 2 O 3 using aberration-corrected scanning transmission electron microscopy (STEM) combined with monochromated, high-energy-resolution electron energy-loss spectroscopy (EELS). Guided by ab initio phonon calculations, we demonstrate that optical phonon modes above 70 meV are predominantly oxygen-derived and exhibit measurable redshifts upon substitution of natural 16 O by enriched 18 O. Spatially resolved vibrational spectrum imaging reveals isotope-enriched tracer layers within Cr 2 O 3 thin films, correlating isotope concentration with phonon intensity variations and vibrational energy shifts. At the nanometer and atomic scales, vibrational EELS mapping uncovers coherent phonon propagation across isotopic interfaces, consistent with theoretical phonon density of states and dispersion relations. These results establish vibrational EELS as a quantitative probe for isotope-dependent phonon transport in materials, opening new possibilities for studying energy dissipation and lattice dynamics.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Effect of electronic structure of the diamond surface on the strength of the diamond-metal interface

A diamond surface undergoes a transformation in its electronic structure by a vacuum anneal at approximately 900 C. The polished surface has no electronic states in the band gap, whereas the annealed surface has both occupied and unoccupied states in the and gap and exhibits some electrical conductivity. The effect of this transformation on the strength of the diamond metal interface was investigated by measuring the static friction force of an atomically clean meta sphere on a diamond flat in ultrahigh vacuum. It was found that low friction (weak bonding) is associated with the diamond surface devoid of gap states whereas high friction (strong bonding) is associated with the diamond surface with gap states. Exposure of the annealed surface to excited hydrogen also leads to weak bonding. The interfacial bond is discussed in terms of interaction of the metal conduction band electrons with the band gap states on the diamond surface. Effects of surface electrical conductivity on the interfacial bond are also be considered.

Pepper, S. V.↗
NASA NTRS2001

Effect of Air and Vacuum Storage on the Degradation of X-Ray-Exposed Aluminized-Teflon Investigated

Metalized Teflon FEP (fluorinated ethylene propylene, DuPont), a common thermal control material, has been found to degrade in the low-Earth-orbit space environment. The aluminized-FEP (Al-FEP) exterior layer on the Hubble Space Telescope has become extremely embrittled, with extensive cracking occurring on all sides of the telescope. This embrittlement has been primarily attributed to radiation exposure (x-rays from solar flares, electron/proton radiation, and possibly near-ultraviolet radiation) combined with thermal cycling. Limited samples of FEP tested after long-term exposure to low Earth orbit on the Hubble Space Telescope and on the Long Duration Exposure Facility indicated that there might be continued degradation in tensile properties over time. An investigation was conducted at the NASA Glenn Research Center to evaluate the effect of air and vacuum storage on the mechanical properties of x-ray-exposed FEP. Aluminized-FEP (5-mil-thick) tensile samples were x-ray exposed with 15.3-kV copper xrays for 2 hr, reducing the percent elongation to failure by approximately 50 percent in comparison to that for pristine Al-FEP. X-ray-exposed samples were stored in air or under vacuum for various time periods to see the effect of storage on tensile properties. Tensile results indicated that samples stored in air had larger decreases in tensile properties than samples stored under vacuum had, as seen in the graph. Samples stored under vacuum (for up to 400 hr) showed no further decrease in tensile properties over time, whereas samples stored in air (for up to 900 hr) appeared to show decreases in tensile properties over time. X-ray-exposed samples stored in air developed a hazy appearance in the exposed area, as seen in the photographs. When the source of the haziness was evaluated using scanning electron microscopy and atomic force microscopy, it was found to reside at the Al/FEP interface as witnessed by an increased surface roughness of the aluminized side of the material and a dramatic decrease in the adhesion between the Al and FEP. Optical properties of air-stored irradiated samples showed an increase in the diffuse reflectance, which is consistent with observed roughening that was characterized by AFM. These findings indicate that air exposure helps degrade x-ray-irradiated FEP. These results indicate that proper sample handling and storage is necessary with space-retrieved materials and with those exposed to ground-based irradiation simulation exposures.

deGroh, Kim K.↗
DOE OSTI2015

Ab initio studies on the adsorption and implantation of Al and Fe to nitride materials

The formation of transfer material products on coated cutting and forming tools is a major failure mechanism leading to various sorts of wear. To describe the atomistic processes behind the formation of transfer materials, we use ab initio to study the adsorption energy as well as the implantation barrier of Al and Fe atoms for (001)-oriented surfaces of TiN, Ti{sub 0.50}Al{sub 0.50}N, Ti{sub 0.90}Si{sub 0.10}N, CrN, and Cr{sub 0.90}Si{sub 0.10}N. The interactions between additional atoms and nitride-surfaces are described for pure adhesion, considering no additional stresses, and for the implantation barrier. The latter, we simplified to the stress required to implant Al and Fe into sub-surface regions of the nitride material. The adsorption energies exhibit pronounced extrema at high-symmetry positions and are generally highest at nitrogen sites. Here, the binary nitrides are comparable to their ternary counterparts and the average adhesive energy is higher (more negative) on CrN than TiN based systems. Contrary, the implantation barrier for Al and Fe atoms is higher for the ternary systems Ti{sub 0.50}Al{sub 0.50}N, Ti{sub 0.90}Si{sub 0.10}N, and Cr{sub 0.90}Si{sub 0.10}N than for their binary counterparts TiN and CrN. Based on our results, we can conclude that TiN based systems outperform CrN based systems with respect to pure adhesion, while the Si-containing ternaries exhibit higher implantation barriers for Al and Fe atoms. The data obtained are important to understand the atomistic interaction of metal atoms with nitride-based materials, which is valid not just for machining operations but also for any combination such as interfaces between coatings and substrates or multilayer and phase arrangements themselves.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗