Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ALIGNMENT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Structurally induced large changes of the energy level alignment in CuPc on Cu ( 110 ) - ( 2 × 1 ) O

While it is becoming apparent that organic semiconductor/metal interfaces may exhibit a variety of different structural phases, it is at present unclear to what extent these different thin-film structures determine the interfacial electronic structure. Here, we observe large changes in the interfacial electronic structure for the case of copper(II) phthalocyanine (CuPc) on Cu(110)–(2×1)O. This striking evolution of the interfacial electronic structure occurs beyond the first monolayer of CuPc and is particularly evident in the frontier orbital region. Using scanning tunneling microscopy in conjunction with photoemission spectroscopy, we characterize ultrathin films of CuPc grown on oxygen reconstructed Cu(110). We propose that the observed unique changes to the electronic structure result from an abrupt transition in film structure between the first and second layers: An interface layer of ordered, face-on molecules templates a largely vertical, edge-on orientation of molecules in the subsequent layer. The quadrupole moment of the molecule accounts for the sizable and unusual change in ionization energy between molecules in the two layers. Lastly, our results demonstrate that the precise structure of the organic semiconductor film exerts an important role in determining the interfacial electronic structure that must be considered and may be harnessed for tailoring energy level alignment at such interfaces.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Alignment without decoupling: The portal to light dark matter in the MSSM

Here we study light, thermal neutralino dark matter in the sub-GeV to ~65 GeV mass range in the minimal supersymmetric extension of the Standard Model. We consider realizations of the limit of alignment without decoupling in the Higgs sector where the heavier CP-even Higgs impersonates the observed Higgs state at 125 GeV, while the lighter CP-even Higgs is the mediator of dark matter annihilation. We single out three distinct and novel possibilities for light dark matter: (i) a neutralino with mass around half the light Higgs mass, in the sub-GeV to ~30 GeV mass range; (ii) a neutralino with a mass around half the pseudoscalar Higgs boson mass, in our examples around (60 – 65) GeV; (iii) a very light neutralino with mass around the light Higgs mass, pair annihilating to Higgs pairs. We discuss the implications of all these possibilities for indirect and direct dark matter detection experiments, and we demonstrate that all scenarios will be tested by next generation direct detection experiments. We also emphasize that the unique Higgs phenomenology of this setup warrants a dedicated search program at the LHC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

First-principles approach to calculating energy level alignment at aqueous semiconductor interfaces

A first-principles approach is demonstrated for calculating the relationship between an aqueous semiconductor interface structure and energy level alignment. The physical interface structure is sampled using density functional theory based molecular dynamics, yielding the interface electrostatic dipole. The GW approach from many-body perturbation theory is used to place the electronic band edge energies of the semiconductor relative to the occupied 1 b ₁ energy level in water. The application to the specific cases of nonpolar (101¯0 ) facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations. As a result, these effects contribute up to 0.5 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Erratum: First-Principles Approach to Calculating Energy Level Alignment at Aqueous Semiconductor Interfaces [Phys. Rev. Lett. 113, 176802 (2014)]

We note, while extending our approach in our Letter to calculate energy level alignment at aqueous TiO 2 interfaces, we discovered two problems with our application of the GW methodology. Briefly, in our approach, we used a DFT + U approach for the underlying structure determination and as an input to the GW calculations. Then, GW calculations were carried out at the full-frequency spectrum-self-consistent level. All calculations were performed with the projector augmented wave (PAW) method as it is implemented in VASP. The specific semiconductors considered were GaN and ZnO. The first problem was caused by improper handling of the U parameter when initializing the follow-up GW calculations, leading to a final calculated band gap for GaN and ZnO that was too large. Second, we used an older set of pseudopotentials for the PAW method. In a paper that was published while our original manuscript was under review, the impact of the completeness of the partial waves representing empty states in the PAW method was analyzed, showing significant issues with the convergence of the GW results for certain materials, particularly ZnO. Specifically, those issues included use of PAW pseudopotentials that deviate too much from norm conservation, an unduly restricted basis set size that constrains the number of empty states available, and use of a small cutoff for the dielectric matrix size that can result in a false convergence with respect to the number of empty states included. Our GW calculations for GaN and ZnO were affected by these problems.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3 Sr 1/3 MnO 3 : ZnO nanocomposites, in which La 2/3 Sr 1/3 MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Accurate band alignment at the amorphous Al 2 O 3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

Here, we have investigated the band alignment at the interface of amorphous aluminum oxide (am-Al 2 O 3 ) grown by atomic layer deposition on p-Ge(100) and the effects of postgrowth annealing using hard x-ray photoelectron spectroscopy and density function theory (DFT). Accurate determination of the valence-band offsets was obtained by comparing the experimentally measured valence bands with DFT-calculated densities of states. The am-Al 2 O 3 density of states calculated from a weighted ensemble of crystalline Al 2 O 3 structures gives excellent agreement with experiment, sufficiently capturing the nonlinear shape of the valence-band edge. We report a valence-band offset of 2.60 ± 0.1 eV for am-Al 2 O 3 /p-Ge, which is reduced by 0.20 eV upon annealing as interfacial GeOx is formed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Surface termination control of charge transfer and band alignment across a semiconductor–crystalline-oxide heterojunction

Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO 3 . Itinerant electrons in Si migrate across the interface toward the surface of SrTiO 3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO 3 and Si. The modification in the dipole leads to a change in band alignment, in which the conduction band of SrTiO 3 moves from being above the valence band of Si in energy, to below it. By capping the SrTiO 3 surface with ultrathin (≤ 1 nm) layers of BaO, SrO or TiO 2 , charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen associated with exposure to ambient conditions as driving the surface depletion in SrTiO 3 . In conclusion, the electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Five-analyzer Johann spectrometer for hard X-ray photon-in/photon-out spectroscopy at the Inner Shell Spectroscopy beamline at NSLS-II: design, alignment and data acquisition

Here, a recently commissioned five-analyzer Johann spectrometer at the Inner Shell Spectroscopy beamline (8-ID) at the National Synchrotron Light Source II (NSLS-II) is presented. Designed for hard X-ray photon-in/photon-out spectroscopy, the spectrometer achieves a resolution in the 0.5–2 eV range, depending on the element and/or emission line, providing detailed insights into the local electronic and geometric structure of materials. It serves a diverse user community, including fields such as physical, chemical, biological, environmental and materials sciences. This article details the mechanical design, alignment procedures and data-acquisition scheme of the spectrometer, with a particular focus on the continuous asynchronous data-acquisition approach that significantly enhances experimental efficiency.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

An Edge Alignment-Based Orientation Selection Method for Neutron Tomography

Neutron computed tomography (nCT) is a 3D char-acterization technique used to image the internal morphology or chemical composition of samples in biology and materials sciences. A typical workflow involves placing the sample in the path of a neutron beam, acquiring projection data at a predefined set of orientations, and processing the resulting data using an analytic reconstruction algorithm. Typical nCT scans require hours to days to complete and are then processed using conventional filtered back-projection (FBP), which performs poorly with sparse views or noisy data. Hence, the main methods in order to reduce overall acquisition time are the use of an improved sampling strategy combined with the use of advanced reconstruction methods such as model-based iterative reconstruction (MBIR). In this paper, we propose an adaptive orientation selection method in which an MBIR reconstruction on previously-acquired measurements is used to define an objective function on orientations that balances a data-fitting term promoting edge alignment and a regularization term promoting orientation diversity. Using simulated and experimental data, we demonstrate that our method produces high-quality reconstructions using significantly fewer total measurements than the conventional approach.

Yang, Diyu↗
DOE OSTI2025

Unsupervised anomaly clustering via offset alignment in multivariate grid sensing data

Modern industries increasingly rely on multi-sensor technologies to acquire complex, high-dimensional data streams, enabling advanced monitoring and control systems. One critical application is online anomaly detection in electrical smart grids, where multivariate and multimodal sensing technologies play a vital role. However, detecting anomalies in such time-series data is challenging due to their inherent temporal dependencies and stochastic behavior. Traditional approaches based on supervised and semi-supervised learning methods depend on labeled datasets, which are often unavailable in real-world scenarios. While unsupervised methods have emerged as promising alternatives, these methods are highly susceptible to noise and outliers commonly present in sensing applications. Furthermore, deep learning-based anomaly detection methods, despite their performance, are often criticized for their black-box nature, limiting their applicability in safety-critical and online environments where interpretability and explainability are paramount. In this work, we propose an unsupervised anomaly clustering method leveraging a cyclic alignment-based offset detection algorithm for multivariate time-series signals. The proposed method is applied to multivariate data collected from vibrational, voltage, and magnetic field sensors deployed in a local grid substation. Our results demonstrate the robustness of the algorithm in accurately clustering various anomalies/events across different sensing modalities. Additionally, we compare the effectiveness of the proposed approach against a simple pattern-based anomaly detection method, which performs well for univariate data but fails to generalize to multivariate and multimodal time-series data.

Mukherjee, Subrata [ORNL] (ORCID:0000000309930338)↗
DOE OSTI2026

A Physics-Aligned Multi-Domain Machine Learning Framework for Time-Localised Diagnosis of Power Electronics Faults

This paper presents a physics-aligned framework for fault diagnosis in multi-phase power-electronic systems using cycle-synchronous windowing and multi-domain features derived from Fourier, wavelet, and Hilbert–Huang representations. While both logistic regression and multilayer perceptron (MLP) models achieve perfect performance under standard evaluation, blind unseen testing reveals a critical failure in a baseline MLP. This is shown to arise from model selection based on validation accuracy. Using validation-loss-based selection restores correct unseen performance and improves confidence. Feature ablation shows that Fourier and wavelet features dominate, while computational analysis indicates that feature extraction, particularly HHT, governs runtime.

Kumar, Praveen [ORNL] (ORCID:0000000291877857)↗
DOE OSTI2021

Compact, All-PM Fiber Integrated and Alignment-Free Ultrafast Yb:Fiber NALM Laser With Sub-Femtosecond Timing Jitter

We report a simple and compact design of a dispersion compensated mode-locked Yb:fiber oscillator based on a nonlinear amplifying loop mirror (NALM). The fully polarization maintaining (PM) fiber integrated laser features a chirped fiber Bragg grating (CFBG) for dispersion compensation and a fiber integrated compact non-reciprocal phase bias device, which is alignment-free. The main design parameters were determined by numerically simulating the pulse evolution in the oscillator and by analyzing their impact on the laser performance. Experimentally, we achieved an 88 fs compressed pulse duration with sub-fs timing jitter at 54 MHz repetition rate and 51 mW of output power with 5.5×10 -5 [20 Hz, 1 MHz] integrated relative intensity noise (RIN). Furthermore, we demonstrate tight phase-locking of the laser's carrier-envelope offset frequency ( fceo ) to a stable radio frequency (RF) reference and of one frequency comb tooth to a stable optical reference at 291 THz.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗
DOE OSTI2018

Self Aligned Aluminum Selective Emitter for n-type Si Cells

We show a method for making a self-aligned selective emitter by annealing aluminum grid lines above the SiAl eutectic temperature, and study the recombination properties using lifetime measurements. The dark saturation current density at the metal contact (J 0,metal ) is determined as a function of minority carrier density using photoconductive decay. After annealing at 600 degrees C, J 0,metal decreases from 1800 fA cm -2 to 500 fA cm -2 at an injection level of 1E15 cm -3 . This value of J 0,metal would correspond to a very low emitter recombination contribution of ~10 - 25 fA cm -2 for a front metal grid with area coverage of 2 - 5%. In addition, J 0,metal is found to be injection dependent. A low contact resistivity of ~0.1 mOhm cm -2 is obtained from transmission line measurement (TLM).

14 SOLAR ENERGY↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2026

Performance-Aligned LLMs for Generating Fast HPC Code

Optimizing scientific software is a difficult task because codebases are often large and complex, and performance can depend upon several factors including the algorithm, its implementation, and hardware among others. Causes of poor performance can originate from disparate sources and be difficult to diagnose. Recent years have seen a multitude of work that use large language models (LLMs) to assist in software development tasks. However, these tools are trained to model the distribution of code as text, and are not specifically designed to understand performance aspects of code. In this work, we introduce a reinforcement learning based methodology to align the outputs of code LLMs with performance. This allows us to build upon the current code modeling capabilities of LLMs and extend them to generate better performing code. Here, we demonstrate that our fine-tuned model improves the expected speedup of generated code over base models for a set of benchmark tasks from 0.9 to 1.6 for serial code and 1.9 to 4.5 for OpenMP parallel code.

Computer science↗
DOE OSTI2018

Band alignment at the CdTe/InSb (001) heterointerface

Typically, CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. Here, molecular beam epitaxy was used to deposit a 5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Self-assembled vertically aligned nanocomposite systems integrated on silicon substrate: Progress and future perspectives

Silicon (Si) integration is a critical step for implementing functional oxides into Si-based electronic devices, considering the advantages of low-cost and scalability of Si substrates. In the past decade, self-assembled vertically aligned nanocomposites (VANs) have attracted enormous research interest owing to their unique multifunctionalities and highly tunable physical properties as well as their one-step self-assembly process. Most of the VAN thin films have been reported to grow epitaxially on single crystalline oxide substrates, however, with limited systems reported on Si substrates due to the very large lattice mismatch between oxides and Si lattices. In this review, the current progress for self-assembled VAN systems integrated on a Si substrate is summarized. Buffer layered enabled VAN growth has been proven to be an effective approach for improving the epitaxial quality of oxide-oxide and oxide-metal VAN systems, while direct growth is preferred in nitride-metal VAN systems. Furthermore, the material versatility enables the Si-integrated VAN thin films to exhibit distinct physical properties such as ferromagnetism, ferroelectricity, magnetoresistance, as well as unique optical properties. The review also summarizes the various parameters for tuning the growth morphologies and corresponding properties for the VAN systems, including phase molar ratio, deposition frequency, buffer layers, background pressure, etc. Finally, future perspectives are discussed including new VAN system exploration, physical properties tuning, as well as design and fabrication of Si-based nanoelectronics and nanophotonic devices applications.

36 MATERIALS SCIENCE↗