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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Origin of the broad three-terminal Hanle signals in Fe/SiO{sub 2}/Si tunnel junctions

Lorentzian-shaped broader three-terminal Hanle (B-3TH) signals are observed in Fe/SiO{sub 2}/Si tunnel junction devices at 6–300 K. We propose a spin conducting model, which explains all the characteristics of our experimental results, such as field angle dependence and bias dependence of the B-3TH signals, as well as experimental results reported by other groups. It was found that the shape of the B-3TH signals is determined by the spin depolarization at the Fe/SiO{sub 2} interface caused by local magnetic fields, unlike the conventional understanding. The shape of the B-3TH signals, including narrower and inverted Hanle signals, reflects the magnetic order of an ultrathin paramagnetic layer formed at the Fe/SiO{sub 2} interface. Our model provides a unified explanation of the B-3TH signals observed in three-terminal Hanle measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Characterization of two-dimensional hexagonal boron nitride using scanning electron and scanning helium ion microscopy

Characterization of the structural and physical properties of two-dimensional (2D) materials, such as layer number and inelastic mean free path measurements, is very important to optimize their synthesis and application. In this study, we characterize the layer number and morphology of hexagonal boron nitride (h-BN) nanosheets on a metallic substrate using field emission scanning electron microscopy (FE-SEM) and scanning helium ion microscopy (HIM). Using scanning beams of various energies, we could analyze the dependence of the intensities of secondary electrons on the thickness of the h-BN nanosheets. Based on the interaction between the scanning particles (electrons and helium ions) and h-BN nanosheets, we deduced an exponential relationship between the intensities of secondary electrons and number of layers of h-BN. With the attenuation factor of the exponential formula, we calculate the inelastic mean free path of electrons and helium ions in the h-BN nanosheets. Our results show that HIM is more sensitive and consistent than FE-SEM for characterizing the number of layers and morphology of 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Generation of electromagnetic waves in the very low frequency band by velocity gradient

It is shown that a magnetized plasma layer with a velocity gradient in the flow perpendicular to the ambient magnetic field is unstable to waves in the Very Low Frequency band that spans the ion and electron gyrofrequencies. The waves are formally electromagnetic. However, depending on wave vector k{sup ¯}=kc/ω{sub pe} (normalized by the electron skin depth) and the obliqueness, k{sub ⊥}/k{sub ||}, where k{sub ⊥,||} are wave vectors perpendicular and parallel to the magnetic field, the waves are closer to electrostatic in nature when k{sup ¯}≫1 and k{sub ⊥}≫k{sub ||} and electromagnetic otherwise. Inhomogeneous transverse flows are generated in plasma that contains a static electric field perpendicular to the magnetic field, a configuration that may naturally arise in the boundary layer between plasmas of different characteristics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Influence of the bonding front propagation on the wafer stack curvature

The influence of the dynamics of the direct wafer bonding process on the curvature of the final wafer stack is investigated. An analytical model for the final curvature of the bonded wafers is developed, as a function of the different load components acting during the bonding front propagation, using thin plate theory and considering a strain discontinuity locked at the bonding interface. Experimental profiles are measured for different bonding conditions and wafer thicknesses. A very good agreement with the model prediction is obtained and the influence of the thin air layer trapped in-between the two wafers is demonstrated. The proposed model contributes to further improvement of the bonding process, in particular, for the stacking of layers of electronic devices, which requires a high accuracy of wafer-to-wafer alignment and a very low distortion level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Modifications of band gap in Si/Ge multilayers through vacuum annealing

In the present paper, important experimental findings and their impact on physical properties of Si/Ge systems are presented with the focus on structural and electronic properties investigations also covering band gap engineering. The use of synchrotron radiation based valence band photoemission spectroscopy technique has been demonstrated which provides the variation in bandgap values as a function of annealing on [Si/Ge]{sub x10} multilayers structure. For this purpose, the required VB offsets are obtained by considering the corresponding VB maximum of as prepared sample as a reference. The bandgap values thus obtained show a gradually decreasing pattern with increasing temperature, which is discussed in terms of the effect of various factors such as: (i) quantum confinement effect normally observed in confined systems (ii) change in the annealing induced intermixing leading to the formation of SiGe alloy and (iii) roughness at the surface/interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Duplex accident tolerant coating for nuclear fuel rods

A method is described for forming duplex layers including an interlayer and a corrosion resistant boundary layer on a nuclear fuel rod cladding tube for use in a water cooled nuclear reactor. The method includes forming, by thermal deposition or physical vapor deposition, on the exterior of a substrate, an inner interlayer with Mo, Ta, W or Nb or other particles, and forming, by thermal deposition or physical vapor deposition, on the interlayer, an outer corrosion resistant layer with particles selected from the group consisting of Cr, a Cr alloy, and combinations thereof. The interlayer prevents eutectic formation between the corrosion resistant layer and the substrate.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

Enhanced Reactivity of Lithium and Copper at High Pressure

High pressure can profoundly affect the electronic structure and reactivity, creating compounds between elements that do not react at ambient conditions. Lithium is known to react with gold and silver; however, no copper compounds are known to date. Here, by compressing mixtures of the elements in diamond-anvil cells, compounds of lithium and copper have been synthesized and characterized by X-ray diffraction for the first time. Pressures as low as 1 GPa lead to the formation of a complex layered phase LiCu, displaying two-dimensional kagomé lattice layers of Cu atoms. With increasing pressure, the layered Cu–Cu bonding is replaced by linear chains of Cu atoms in the high-pressure phase Li 2 Cu. Here we show the powerful effects of even modest pressures on the reactivity of lithium, leading to structures of remarkable complexity and low-dimensional transition metal bonding.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

A numerical study of mixing enhancement in supersonic reacting flow fields

NASA Langley has intensively investigated the components of ramjet and scramjet systems for endoatmospheric, airbreathing hypersonic propulsion; attention is presently given to the optimization of scramjet combustor fuel-air mixing and reaction characteristics. A supersonic, spatially developing and reacting mixing layer has been found to serve as an excellent physical model for the mixing and reaction process. Attention is presently given to techniques that have been applied to the enhancement of the mixing processes and the overall combustion efficiency of the mixing layer. A fuel injector configuration has been computationally designed which significantly increases mixing and reaction rates.

Drummond, J. Philip↗
DOE OSTI2023

Evidence of Long-Range and Short-Range Magnetic Ordering in the Honeycomb Na 3 Mn 2 SbO 6 Oxide

We present a comprehensive study of the synthesis, structure, and magnetic properties of the honeycomb oxide Na 3 Mn 2 SbO 6 supported by neutron diffraction, heat capacity, and magnetization measurements. The refinements of the neutron diffraction patterns (150, 50, and 45 K) using the Rietveld method confirm the monoclinic (S. G. C2/m) structure. Temperature-dependent magnetic susceptibilities measured at varying fields along with the heat capacity measurements demonstrate the coexistence of long-range ordering (∼42 K) and short-range ordering (∼65 K). The field-dependent isothermal magnetization measurements at 5 K indicate a spin-flop transition around 5 T. Rietveld refinements of the low-temperature (below 45 K) neutron diffraction data further confirm the long-range magnetic ordering. In addition, the temperature variation of the lattice parameters obtained from the neutron powder diffraction analysis exhibited a distinct anomaly near the antiferromagnetic transition temperature. The appearance of the concomitant broadened backgrounds in the neutron powder diffraction data collected at 80, 50, and 45 K supports the short-range ordering. The resultant magnetic structure consists of spins that are aligned antiparallel with the nearest neighbors and also with the spins of the adjacent honeycomb layers. The occurrence of a fully ordered magnetic ground state (Neel antiferromagnetic (AFM)) in Na3Mn 2 SbO 6 consolidates the significance of fabricating new honeycomb oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Ag{sub 1.75}InSb{sub 5.75}Se{sub 11}: A new noncentrosymmetric compound with congruent-melting behavior

A new type of quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. It crystallizes in the non-centrosymmetric space group Cm of monoclinic system, with a=13.419 (1) Å, b=4.084 (1) Å, and c=19.165 (2) Å, Z=2. The compound has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV, which agrees with its dark gray color. Moreover, the compound exhibits congruent-melting behavior. - Graphical abstract: Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. - Highlights: • The new quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. • It crystallizes in non-centrosymmetric space group Cm and has a new layer structure. • The structure consists of {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. • The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV. • The compound exhibits congruent-melting behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1989

Numerical analysis of flow about a total temperature sensor

The unsteady flowfield about an airfoil-shaped inlet temperature sensor has been investigated using the thin-layer and full Navier-Stokes equations. A finite-volume formulation of the governing equations was used in conjunction with a Runge-Kutta time stepping scheme to analyze the flow about the sensor. Flow characteristics for this configuration were established at Mach numbers of 0.5 and 0.8 for different Reynolds numbers. The results were obtained for configurations of increasing complexity; important physical phenomena such as shock formation, boundary-layer separation, and unsteady wake formation were noted. Based on the computational results, recommendations for further study and refinement of the inlet temperature sensor were made.

Von Lavante, Ernst↗
DOE OSTI2014

Tunable MoS{sub 2} bandgap in MoS{sub 2}-graphene heterostructures

Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS{sub 2}-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS{sub 2} strongly influences the type and the value of the electronic bandgap in MoS{sub 2}, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S–S interplanar distance (MoS{sub 2} thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo–S bonds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin switches for compact implementation of neuron and synapse

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Thickness and temperature depending intermixing of SiO{sub x}/SiO{sub 2} and SiO{sub x}N{sub y}/SiO{sub 2} superlattices: Experimental observation and thermodynamic modeling

Multilayered SiO{sub x}/SiO{sub 2} and SiO{sub x}N{sub y}/SiO{sub 2} thin films were fabricated using different techniques and subsequently annealed at high temperatures (≥1100 °C) in order to form Si nanocrystals by means of the well-known superlattice approach. The thickness of the SiO{sub x} and SiO{sub x}N{sub y} layers was varied from 1.5 to 5 nm, while for the SiO{sub 2} layers it was fixed at 4 nm. Using transmission electron microscopy, we showed that the multilayered structure generally sustains the high temperature annealing for both types of films. However, for samples with ultrathin SiO{sub x} or SiO{sub x}N{sub y} layers a breakdown of the superlattice structure and a complete intermixing of layers were observed at high temperatures. On the contrary, annealing at lower temperature (900 °C) preserves the multilayered structure even of such samples. Theoretical calculations showed that the intermixing of SiO{sub x}/SiO{sub 2} and SiO{sub x}N{sub y}/SiO{sub 2} superlattices in the ultrathin layers thickness limit may be explained thermodynamically by the gain in the Gibbs free energy, which depends in turn on the annealing temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

How the Hydrophobic Interface between a Perfluorosulfonic Acid Polymer and Water Vapor Controls Membrane Hydration

Stable hydration in perfluorinated polyelectrolyte membranes such as Nafion is essential to maintain good ion conductivity and manage permeation, especially in vapor-fed devices where water content depends on relative humidity in a gas stream. Extensive studies in the literature have shown that Nafion hydration in water vapor is controlled by its interfacial transport resistance. Nafion forms a fluorine-rich layer at the polymer-gas interface, and it has been proposed that this layer blocks water transport due to its hydrophobicity. To develop a molecular-level description of the physics underlying transport resistance in this system, we have performed a computational reaction-diffusion kinetics study of water evaporation from Nafion. Two distinct models are examined, one mimicking the blocking function proposed in the literature and the other assuming that there is no blocking, treating instead water evaporation as a dynamic balance between uptake from the gas and desorption from the polymer surface. Simulation results are compared to time-dependent infrared data over a range of 100-0% relative humidity from the literature. Only the dynamic model successfully reproduces experimental observations. This indicates that the physical nature of interfacial transport resistance is not slow diffusion across an interfacial layer; rather, it is due to the competition between dehydration and rehydration. The simulation data provide details on the accompanying water distributions throughout the membrane and on interfacial kinetics, showing that they are characterized by strong fluctuations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗