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At least 1,171 records · Page 65

Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures

Polymorphic phase transition is an important route for engineering the properties of two-dimensional materials. Heterostructure construction, on the other hand, not only allows the integration of different functionalities for device applications, but also enables the exploration of new physics arising from proximity coupling. Yet, implementing a design that incorporates the advantages of both remains underexplored. Here in this paper, based on comprehensive experimental and theoretical studies of WSe 2 /SnSe 2 core-shell lateral heterostructure, we demonstrate an unexpected H to T' phase transition in transition metal dichalcogenides (TMDs), correlating to a change of materials properties from semiconductor to topological insulator (TI), and propose a novel shell-to-core stress propagation mechanism. This finding offers new insights into TMD phase transition empowered by the rational design of heterostructures. Owing to the superconducting properties of SnSe 2 at low temperatures, the unique TI/superconductor core-shell template is expected to add more arsenals to the ongoing search of Majorana fermions in condensed matter systems.

36 MATERIALS SCIENCE↗

Monolayer 1T-LaN 2 : Dirac spin-gapless semiconductor of p -state and Chern insulator with a high Chern number

Two-dimensional transition-metal dinitrides have attracted considerable attention in recent years due to their rich magnetic properties. Here, we focus on rare-earth-metal elements and propose a monolayer of lanthanum dinitride with a 1T structural phase, 1T-LaN 2 . Using first-principles calculations, we systematically investigated the structure, stability, magnetism, and band structure of this material. It is a flexible and stable monolayer exhibiting a low lattice thermal conductivity, which is promising for future thermoelectric devices. Here, the monolayer shows the ferromagnetic ground state with a spin-polarized band structure. Two linear spin-polarized bands cross at the Fermi level forming a Dirac point, which is formed by the p atomic orbitals of the N atoms, indicating that monolayer 1T-LaN 2 is a Dirac spin-gapless semiconductor of p-state. When the spin–orbit coupling is taken into account, a large nontrivial indirect bandgap (86/354 meV) can be opened at the Dirac point, and three chiral edge states are obtained, corresponding to a high Chern number of C = 3, implying that monolayer 1T-LaN 2 is a Chern insulator. Importantly, this kind of band structure is expected to occur in more monolayers of rare-earth-metal dinitride with a 1T structural phase.

2D materials↗

Particle–hole asymmetry and quantum confinement effects on the magneto-optical response of topological insulator thin-films

Intrinsically broken symmetries in the bulk of topological insulators (TIs) are manifested in their surface states. Despite particle–hole asymmetry in TIs, it has often been assumed that their surface states are characterized by a particle–hole symmetric Dirac energy dispersion. In this work, we demonstrate that the effect of particle–hole asymmetry is essential to correctly describe the energy spectrum and the magneto-optical response in TIs thin-films. In thin-films of TIs with a substantial degree of particle–hole symmetry breaking, such as Sb 2 Te 3 , the longitudinal optical conductivity displays absorption peaks arising from optical transitions between bulk and surface Landau levels for low photon energies. The transition energies between the bulk and surface Landau levels exhibit clearly discernable signatures from those between surface Landau levels due to their distinct magnetic field dependence. Furthermore, bulk contributions to the magneto-optical conductivity in a TI thin-film are enhanced via one type of doping while being suppressed by the other. This asymmetric dependence on the type of doping aids in revealing the particle–hole asymmetry in TI thin-films.

36 MATERIALS SCIENCE↗

Low-damage electron beam lithography for nanostructures on Bi 2 Te 3 -class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi 2 Se 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. In conclusion, although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

42 ENGINEERING↗

Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide

Hybrid structures between conventional, s-wave superconductors, and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, whereas the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi 2 Se 3

Topologically protected surface current is highly promising for next-generation low-dissipation and disorder-tolerant quantum electronics and computing. Yet, electric transport from the co-existing bulk state dominates the responses of the Dirac surface state, especially at elevated temperatures relevant to technological applications. Here, we present an approach that convincingly showcases the generation, disentanglement, and precise control of enduring surface charge carriers on a topological insulator, Bi 2 Se 3 , with high bulk conductivity, all achieved at room temperature. By using pump–probe modulation spectroscopy under ultrabroadband driving tunable from 4 meV to 1.55 eV, we show the terahertz (THz) field-induced surface carriers by discovering their initial temporal responses dominant over high density trivial bulk carriers. Strikingly, the response of the induced surface carrier responses persists for more than ~5 ps and is enhanced by reducing pump photon energy. The dynamics and lifetime of the distinct surface response manifest themselves as the enhanced THz pump-induced THz transmission, which directly correlates with the transient negative THz conductivity. Increasing the THz driving field reduces the induced surface carrier lifetime and identifies, particularly, an optimal pump field of E s ~ 224 kV cm -1 for generating the dominant surface response relative to the bulk. This surface carrier dominant regime is suppressed by a joint effect of enhanced surface-bulk scattering and a more rapid saturation of surface excitation compared to the bulk that sets in above E s . The controllability of room temperature topologically surface carriers through pump photon energy offer compelling possibilities for extending this approach to other topological complex materials.

36 MATERIALS SCIENCE↗

Boundary scattering in topological Kondo insulator SmB 6

We have studied the effects of phonon-boundary scattering on the thermal transport of topological Kondo insulator SmB6. The studies have been performed using the 3ω method across a temperature range 3–300 K. Our results indicate that the thermal conductivity of micro-sized SmB 6 is of an order of magnitude smaller than that of a bulk single crystal. Using the Callaway model, we analyzed the low-temperature lattice thermal conductivity of the microcrystal and demonstrated that phonon scattering at the sample boundaries is a major contributor to the thermal resistance in this topological material. Furthermore, our study reveals that the temperature dependence of the lattice thermal conductivity exhibits a double-peak structure, suggesting strong phonon–phonon or phonon–defect interactions in this material, characteristic of resonant scattering. Furthermore, these findings will help in a better understanding of thermal transport in advanced materials and devices at the micro scale.

Physics - Condensed matter physics↗

The Dirac equation as a model of topological insulators

The Dirac equation with a spatially dependent mass can be used as a simple, exactly soluble, continuum model of a three-dimensional Topological Insulator. For a bulk system, the sign of the mass determines the parity at the only time-reversal point ( k _ = 0 ) and, thus, leads to the designation of the bulk as being topologically trivial or non-trivial. Since the mass changes sign at the interface between a topologically trivial and non-trivial materials, topological surface states appear on that boundary. We present that electron scattering experiments may provide an alternate probe of the topological character of the surface states. For infinitely thick slabs, the states on the opposite sides of the slab decouple. The spatial decoupling results in the surface states become gapless, non-degenerate and, due to the Rashba spin–orbit coupling generated by the loss of inversion symmetry, exhibit spin-momentum locking. We review several characteristic properties of the topological surface states which are dependent on the topological quantum numbers and show that, using this model, they can be calculated exactly using simple approaches.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Magnetic fluctuations and the spin–orbit interaction in Mott insulating CoO

Motivated by the presence of an unquenched orbital angular momentum in CoO, a team at Chalk River, including a recently hired research officer Roger Cowley, performed the first inelastic neutron scattering experiments on the classic Mott insulator. Despite identifying two magnon modes at the zone boundary, the team was unable to parameterise the low energy magnetic excitation spectrum below TN using conventional pseudo-bosonic approaches, instead achieving only qualitative agreement. It would not be for another 40 years that Roger, now at Oxford and motivated by the discovery of the high-Tc cuprate superconductors, would make another attempt at the parameterisation of the magnetic excitation spectrum that had previously alluded him at the start of his career. Upon his return to CoO, Roger found a system embroiled in controversy, with some of its most fundamental parameters still remaining undetermined. Faced with such a formidable task, Roger performed a series of inelastic neutron scattering experiments in the early 2010s on both CoO and a magnetically dilute structural analogue Mg 0.97 Co 0.03 O. These experiments would prove instrumental in the determination of both single-ion and cooperative magnetic parameters for CoO. Both these sets of parameters would eventually be used in a spin–orbit exciton model, developed by his longtime friend and collaborator Bill Buyers, to successfully parameterise the complex spectrum that both measured at Chalk River almost 50 years prior. The story of CoO is of one that has come full circle, one filled with both spectacular failures and intermittent, yet profound, little victories.

36 MATERIALS SCIENCE↗

Asymmetric Fraunhofer spectra in a topological insulator-based Josephson junction

Josephson junctions with topological insulators as their weak link (S–TI–S junctions) are predicted to host Majorana fermions, which are key to creating qubits for topologically protected quantum computing. But the details of the S–TI–S current-phase relation and its interplay with magnetic fields are not well understood. We fabricate a Bi 2 Se 3 junction with NbTi leads and measure the Fraunhofer patterns of the junction with applied in-plane fields. We observe that asymmetric Fraunhofer patterns appear in the resistance maps of B z vs B x,y , with aperiodic node spacings. These asymmetric patterns appear even at zero parallel field and for temperatures up to 1 K. The anomalous features are compared to asymmetric Fraunhofer patterns expected for finite Cooper pair momentum shifts as well as geometric effects. We show that the geometric effects can dominate, independent of in-plane field magnitude. Furthermore, these results are important for differentiating geometrical phase shifts from those caused by Cooper pair momentum shifting, Majorana mode signatures, or other unconventional superconducting behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lattice distortions and the metal–insulator transition in pure and Ti-substituted Ca 3 Ru 2 O 7

Here, we report pair distribution function studies on the relationship between the metal–insulator transition (MIT) and lattice distortions in pure and Ti-substituted bilayer Ca 3 Ru 2 O 7 . Structural refinements performed as a function of temperature, magnetic field and length scale reveal the presence of lattice distortions not only within but also orthogonal to the bilayers. Because of the distortions, the local and average crystal structure differ across a broad temperature region extending from room temperature to temperatures below the MIT. The coexistence of distinct lattice distortions is likely to be behind the marked structural flexibility of Ca 3 Ru 2 O 7 under external stimuli. This observation highlights the ubiquity of lattice distortions in an archetypal Mott system and calls for similar studies on other families of strongly correlated materials.

36 MATERIALS SCIENCE↗

Two-atom-thin topological crystalline insulators lacking out of plane inversion symmetry

A two-dimensional topological crystalline insulator (TCI) with a single unit cell (u.c.) thickness is demonstrated here. To that end, one first shows that tetragonal (C 4 in-plane) symmetry is not a necessary condition for the creation of zero-energy metallic surface states on TCI slabs of finite-thicknesses, because zero-energy states persist even as all the in-plane rotational symmetries—furnishing topological protection—are completely removed. In other words, zero-energy levels on the model are not due to (nor are they protected by) topology. Furthermore, effective two-fold energy degeneracies taking place at few discrete k-points away from zero energy in the bulk Hamiltonian—that are topologically protected—persist at the u.c. thickness limit. Here, the chiral nature of the bulk TCI Hamiltonian permits creating a $2\times 2$ square Hamiltonian, whose topological properties remarkably hold invariant at both the bulk and at the single u.c. thickness limits. The identical topological characterization for bulk and u.c.-thick phases is further guaranteed by a calculation involving Pfaffians. This way, a two-atom-thick TCI is deployed hereby, in a demonstration of a topological phase that holds both in the bulk, and in two dimensions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin and orbital excitations through the metal-to-insulator transition in Cd 2 Os 2 O 7 probed with high-resolution resonant inelastic x-ray scattering

Here, high-resolution resonant inelastic x-ray scattering measurements (ΔE=46meV) have been performed on Cd 2 Os 2 O 7 through the metal-to-insulator transition (MIT). A magnetic excitation at 125 meV evolves continuously through the MIT, in agreement with recent Raman-scattering results, and provides further confirmation for an all-in all-out magnetic ground state. Asymmetry of this feature is likely a result of coupling between the electronic and the magnetic degrees of freedom. We also observe a broad continuum of interband excitations centered at 0.3 eV energy loss. This is indicative of significant hybridization between Os 5d and O 2p states and the concurrent itinerant nature of the system. In turn, this suggests a possible breakdown of the free-ion model for Cd 2 Os 2 O 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Time-resolved resonant inelastic x-ray scattering in a pumped Mott insulator

Collective excitations contain rich information about photoinduced transient states in correlated systems. In a Mott insulator, charge degrees of freedom are frozen, but can be activated by photodoping. The energy-momentum distribution of the charge excitation spectrum reflects the propagation of charge degrees of freedom and provides information about the interplay among various intertwined instabilities on the timescale set by the pump. To reveal charge excitations out of equilibrium, here we simulate time-resolved x-ray absorption and resonant inelastic x-ray scattering using a Hubbard model. After pumping, the former resolves photodoping, while the latter characterizes the formation, dispersion, weight, and nonlinear effects of collective excitations. Intermediate-state information from time-resolved resonant inelastic x-ray scattering (trRIXS) can be used to decipher the origin of these excitations, including bimagnons, Mott-gap excitations, doublon and single-electron in-gap states, and anti-Stokes relaxation during an ultrafast pump. This paper provides a theoretical foundation for existing and future trRIXS experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Semimetal–Mott insulator quantum phase transition of the Hubbard model on the honeycomb lattice

We take advantage of recent improvements in the grand canonical hybrid Monte Carlo algorithm, to perform a precision study of the single-particle gap in the hexagonal Hubbard model, with on-site electron-electron interactions. After carefully controlled analyses of the Trotter error, the thermodynamic limit, and finite-size scaling with inverse temperature, we find a critical coupling of U c /κ = 3.834(14) and the critical exponent zν = 1.185(43). Under the assumption that this corresponds to the expected antiferromagnetic Mott transition, we are also able to provide a preliminary estimate β = 1.095(37) for the critical exponent of the order parameter. We consider our findings in view of the SU(2) Gross-Neveu, or chiral Heisenberg, universality class. Here, we also discuss the computational scaling of the hybrid Monte Carlo algorithm, and possible extensions of our work to carbon nanotubes, fullerenes, and topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Iterated projected position algorithm for constructing exponentially localized generalized Wannier functions for periodic and nonperiodic insulators in two dimensions and higher

Localized bases play an important role in understanding electronic structure. In periodic insulators, a natural choice of localized basis is given by the Wannier functions which depend on a choice of unitary transform known as a gauge transformation. Over the past few decades, there have been many works that have focused on optimizing the choice of the gauge so that the corresponding Wannier functions are maximally localized or reflect some symmetry of the underlying system. In this work, we consider fully nonperiodic materials where the usual Wannier functions are not well defined and gauge optimization is impractical. To tackle the problem of calculating exponentially localized generalized Wannier functions in both periodic and nonperiodic systems, we discuss the ‘iterated projected position (IPP)” algorithm. Here, the IPP algorithm is based on matrix diagonalization and therefore unlike optimization-based approaches, it does not require initialization and cannot get stuck at a local minimum. Furthermore, the IPP algorithm is guaranteed by a rigorous analysis to produce exponentially localized functions under certain mild assumptions. We numerically demonstrate that the IPP algorithm can be used to calculate exponentially localized bases for the Haldane model, the Kane-Mele model (in both Z 2 invariant even and Z 2 invariant odd phases), and the p x + ip y model on a quasicrystal lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Non-Loudon-Fleury Raman scattering in spin-orbit coupled Mott insulators

In this work we revisit the theory of magnetic Raman scattering in Mott insulators with strong spin-orbit coupling, with a major focus on Kitaev materials. We show that Kitaev materials with bond-anisotropic interactions are generally expected to show both one- and two-magnon responses. It is further shown that, in order to obtain the correct leading contributions to the Raman vertex operator R, one must take into account the precise, photon-assisted microscopic hopping processes of the electrons and that, in systems with multiple hopping paths, R contains terms beyond those appearing in the traditional Loudon-Fleury theory. Most saliently, a numerical implementation of the revised formalism to the case of the three-dimensional hyperhoneycomb Kitaev material β– Li 2 Ir O 3 reveals that the non-Loudon-Fleury scattering terms actually dominate the Raman intensity. In addition, they induce a qualitative modification of the polarization dependence, including, e.g., the emergence of a sharp one-magnon peak at low energies, which is not expected in the traditional Loudon-Fleury theory. This peak is shown to arise from microscopic photon-assisted tunneling processes that are of similar type with the ones leading to the symmetric off-diagonal interaction Γ (known to be present in many Kitaev materials), but take the form of a bond-directional magnetic dipole term in the Raman vertex. These results are expected to apply across all Kitaev materials and mark a drastic change of paradigm for the understanding of Raman scattering in materials with strong spin-orbit coupling and multiple exchange paths.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Probing the effect of magnetic field on charge order in the quasi-two-dimensional Mott insulator κ - (ET) 2 Hg(SCN) 2 Cl

Molecular-based quasi-two-dimensional charge-ordered Mott insulators can possess both spin S = 1/2 and an electric dipole degree of freedom residing on each (BEDT - TTF) 2 lattice site. There exists a theoretical proposal for a magnetoelectric effect in such a material, which can manifest itself as a sensitivity of charge distribution on (BEDT - TTF) 2 dimers to the magnetic field. Here in this work, we used Raman scattering spectroscopy in the magnetic field up to 31 T applied perpendicular to the two-dimensional triangular lattice planes to probe a magnetoelectric effect in $\kappa$ - (ET) 2 H g (SCN) 2 Cl. This is a model compound, which shows charge order and antiferromagnetic correlations at temperatures below 30 K. We discuss possible reasons for the absence of an observable magnetoelectric effect in the probed temperature and magnetic field ranges.

36 MATERIALS SCIENCE↗