High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite
Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH 3 NH 3 ) 0.5 (NH 2 CHNH 2 ) 0.5 Pb 0.5 Sn 0.5 I 3 (MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 ), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 10 12 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.