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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Influence of annealing temperature and Sn doping on the optical properties of hematite thin films determined by spectroscopic ellipsometry

Hematite (α-Fe{sub 2}O{sub 3}) thin films were prepared by sol-gel route and investigated for application in H{sub 2} generation by photo-assisted water splitting. The photoelectrochemical (PEC) performance was shown to increase significantly for films deposited on SnO{sub 2}:F/glass subjected to high temperature (T) annealing (>750 °C). Strong correlation was found between photogenerated current, donor concentration, and Sn concentration as determined by Mott-Schottky analysis and X-ray photoelectron spectroscopy. The effects of thermal annealing and Sn addition in the resulting microstructure and optical properties of hematite films deposited on fused silica substrates were determined by a combination of structural characterization techniques and spectroscopic ellipsometry. Thermal annealing (>600 °C) induces a higher optical absorption that is associated directly to film densification and grain growth; however, it promotes no changes in the energy positions of the main Fe{sub 2}O{sub 3} electronic transitions. The band gap energy was found to be 2.21 eV and independent of microstructure and of Sn concentration for all studied films. On the other hand, Sn can be incorporated in the Fe{sub 2}O{sub 3} lattice for concentration up to Sn/Fe ∼2%, leading to an increase in energy split of the main absorption peak, attributed to a distortion of the Fe{sub 2}O{sub 3} lattice. For higher concentrations, Sn incorporation leads to a reduction in absorption, associated with higher porosity and the formation of a secondary Sn-rich phase. In summary, the variation in the optical properties induced by thermal annealing and Sn addition cannot account for the order of magnitude increase of the current density generated by photoanodes annealed at high T (>750 °C); thus, it is concluded that the major contribution for the enhanced PEC performance comes from improved electronic properties induced by the n-type doping caused by Sn diffusion from the SnO{sub 2}:F substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
DOE OSTI2023

Implementation of a High-Fidelity Interface Resolving Method in Nek5000

The development and utilization of computational fluid dynamics (CFD) models for large, high-temperature electric melters in the Waste Treatment and Immobilization Plant (WTP) in eastern Washington State have proven to be valuable for various purposes. These models allow for a better understanding of the physio-chemical processes occurring within the melter vessels and can contribute to improving operational efficiency, throughput, and addressing operational issues related to vitrification. The CFD models employed for these melter vessels incorporate multiphase fluid flow and heat transfer simulations in different regions, including the plenum, cold cap, and molten glass regions. As the tank waste and glass formers are introduced into the melter, a reacting batch layer known as the cold cap forms on top of the molten glass. To enhance the melt rate, forced convection bubblers located at the bottom of the melters generate convection currents that help homogenize the molten glass and provide heat to the cold cap. As the bubbles rise through the highly viscous glass, they adopt a spherical-cap shape [1]. Meanwhile, the conversion of the batch to glass generates significant amounts of gases (such as water vapor, carbon dioxide, sulfur dioxide, and NOx) due to thermal decomposition [2]. These gases become trapped between the cold cap and molten glass, forming a foam layer [3]. For modeling multiphase flow in CFD and heat transfer simulations of waste glass melters at different scales, efforts are underway to augment the capabilities of the Nek5000 [4] and NekRS [5] open-source codes [6]. Nek5000/NekRS is a scalable and efficient spectral element code that has been successfully applied to a wide range of fluid dynamics problems. By leveraging the Nek5000/NekRS software, it becomes possible to model the melter systems more affordably and with lower computational requirements compared to currently utilized commercial CFD software. The specific objectives of this ongoing effort include: 1. Implementation of a level set method in Nek5000/NekRS: The level set method is a numerical technique commonly employed in CFD simulations to track and represent the interface between different phases or materials accurately. By incorporating this method into Nek5000/NekRS, the ability to simulate multiphase flows in waste glass melters at a high level of fidelity can be achieved. 2. Demonstration of capability for air bubbling through molten glass: As part of the development process, a specific case of air bubbling through molten glass will be simulated using the augmented Nek5000/NekRS code. This demonstration aims to showcase the ability of the software to accurately capture and analyze the complex phenomena involved in the multiphase flow within waste glass melters. By achieving these objectives, the improved Nek5000/NekRS code will offer a powerful computational tool for simulating and analyzing waste glass melter systems, enabling better understanding, optimization, and troubleshooting of these vitrification processes. The ability to accurately model and simulate multiphase flows has broad relevance across many industries and scientific domains, and the improved functionality can contribute to advancements in various fields beyond waste glass melter simulations.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2026

Developments in Performance and Portability of BlockGen

For more than a decade Monte Carlo event generators with the current matrix element algorithms have been used for generating hard scattering events on CPU platforms, with excellent flexibility and good efficiency. While the HL-LHC is approaching and precision requirements are becoming more demanding, many studies have been made to solve the bottleneck in the current Monte Carlo event generator tool chains. The novel BlockGen family of fast matrix element algorithms shown in this report, is one of the new developments that are more suitable for GPU acceleration. We report the development experience of porting BlockGen using Kokkos. Moreover, we discuss the performance of the Kokkos version in comparison with the dedicated GPU version in CUDA.

Bothmann, E. [Gottingen U.]↗
DOE OSTI2015

Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V{sub FB}=−5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R{sub 0}A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V{sub g} demonstrate good consistency with the measured values. The R{sub 0}A product remarkably degenerates when V{sub g} is far below or above V{sub FB} because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×10{sup 7} Ω · cm{sup 2} around the transition between surface depletion and weak inversion when V{sub g}≈−4 V, which might result from reduced generation-recombination current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Structure of a magnetic flux annihilation layer formed by the collision of supersonic, magnetized plasma flows

We present experiments characterizing the detailed structure of a current layer, generated by the collision of two counter-streaming, supersonic and magnetized aluminum plasma flows. The anti parallel magnetic fields advected by the flows are found to be mutually annihilated inside the layer, giving rise to a bifurcated current structure—two narrow current sheets running along the outside surfaces of the layer. Measurements with Thomson scattering show a fast outflow of plasma along the layer and a high ion temperature (T i ~¯ZT e , with average ionization ¯Z=7). Lastly, analysis of the spatially resolved plasma parameters indicates that the advection and subsequent annihilation of the in-flowing magnetic flux determines the structure of the layer, while the ion heating could be due to the development of kinetic, current-driven instabilities.

42 ENGINEERING↗
NASA NTRS1973

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Been, J. F.↗
NASA NTRS1993

Characterization of the IMF By-dependent field-aligned currents in the cleft region based on DE 2 observations

The magnetic field and plasma data from 47 passes of DE-2 are used to study the IMF By-dependent distribution of field-aligned currents in the cleft region. It is proposed that the low-latitude cleft current (LCC) region is not an extension of the region 1 or region 2 current system and that a pair of LCCs and high-latitude cleft currents (HCCs) constitutes the cleft field-aligned current regime. The proposed pair of cleft field-aligned currents is explained with a qualitative model in which this pair of currents is generated on open field lines that have just been reconnected on the dayside magnetopause. The electric fields are transmitted along the field lines to the ionosphere, creating a poleward electric field and a pair of field-aligned currents when By is positive; the pair of field-aligned currents consists of a downward current at lower latitudes and an upward current at higher latitudes. In the By negative case, the model explains the reversal of the field-aligned current direction in the LCC and HCC regions.

Taguchi, S.↗
NASA NTRS1993

Vorticity equation for MHD fast waves in geospace environment

The MHD vorticity equation is modified in order to apply it to nonlinear MHD fast waves or shocks when their extent along the magnetic field is limited. Field-aligned current (FAC) generation is also discussed on the basis of this modified vorticity equation. When the wave normal is not aligned to the finite velocity convection and the source region is spatially limited, a longitudinal polarization causes a pair of plus and minus charges inside the compressional plane waves or shocks, generating a pair of FACs. This polarization is not related to the separation between the electrons and ions caused by their difference in mass, a separation which is inherent to compressional waves. The resultant double field-aligned current structure exists both with and without the contributions from curvature drift, which is questionable in terms of its contribution to vorticity change from the viewpoint of single-particle motion.

Yamauchi, M.↗
NASA NTRS2024

Development of a High Frequency Class-A Amplifier for High Temperature Wireless Microsystems based on a Silicon Carbide Static Induction Transistor

Next generation gas turbine engine health monitoring for high performance jet engine-powered aircraft will incorporate integrated microelectronic sensors specifically designed to enhance aircraft functionality, engine efficiency, and safety. Temperature, air flow and pressure associated with the gas path as well as emissions from the engine correlate to the state of the combustor and other engine health conditions. Monitoring these parameters accurately requires positioning electronic sensors in the hot zone of the gas turbine engine, which exposes them to temperatures in excess of 400ºC. At these temperatures, signal amplification is needed at the transducer level to distinguish the desired measured signal from the significant electronic noise generated by the harsh environment. In this presentation, we report on the simulation, development, fabrication, and testing on a high temperature Class-A amplifier which utilizes a 4H-SiC Static Induction Transistor (SIT) as the active device and input/output matching and DC bias networks comprised of thin-film spiral inductors, metal-insulator-metal capacitors, and thick film chip resistors. A small signal model that emulates the operation of the 4H-SiC SIT from 25 to 400ºC, with an emphasis on operation at 400οC, was utilized. Measurements were performed from 25 to 400ºC to generate current-voltage curves, capacitive transistor characteristics and high frequency scattering parameters (S-parameters). The measured data was used to extrapolate the transconductance, gm, as a function of temperature for model development. Circuit simulation tools were used to generate S-parameters, which were compared to the measured values. At 400οC, a maximum difference between measured and simulated S-parameters for frequencies from 20 to 100 MHz were 3.84%, 0.68%, 10.61%, and 3.26% for S21, S12, S11, and S22, respectively. The average transit frequency, ft, was calculated from measured values to be 197.8 MHz, while the simulated value from the model was found to be 200 MHz. The Amplifier’s S-parameters were recorded at 20-100 MHz over a temperature range of 25-400ºC and show a gain of approximately 15.8 and 5.80 dBm at 25 and 400ºC, respectively. The input and output reflection coefficients at 50 MHz and 400ºC were -18.5 and -15.2 dB, respectively. The noise figure and phase noise were measured over the temperature range of 25-400ºC and recorded. The noise figure increased 21% at 50 MHz over the temperature range, while the 1 kHz offset of the phase noise remained below -110 dB. The stability factor, K, calculated with measured and simulated data demonstrates unconditional stability over the frequency range at 400ºC. Lastly, the 1-dB compression point was measured at 50 MHz and 400ºC with an approximated output of 9.5 dBm.

SiC↗
DOE OSTI2016

PROPINQUITY OF CURRENT AND VORTEX STRUCTURES: EFFECTS ON COLLISIONLESS PLASMA HEATING

Intermittency of heating in weakly collisional plasma turbulence is an active subject of research, with significant potential impact on understanding of the solar wind, solar corona, and astrophysical plasmas. Recent studies suggest a role of vorticity in plasma heating. In magnetohydrodynamics small-scale vorticity is generated near current sheets and this effect persists in kinetic plasma, as demonstrated here with hybrid and fully kinetic particle-in-cell simulations. Furthermore, vorticity enhances local kinetic effects, with a generalized resonance condition selecting sign-dependent enhancements or reductions of proton heating and thermal anisotropy. In such plasmas heating is correlated with vorticity and current density, but more strongly with vorticity. These results help explain several prior results that find kinetic effects and energization near to, but not centered on, current sheets. Evidently intermittency in kinetic plasma involves multiple physical quantities, and the associated coherent structures and nonthermal effects are closely related.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2018

Studying the Pyroelectric Effect in AlN Epilayers

We have studied the pyroelectric effect in 6- to 12-μm-thick AlN epilayers grown by hydride–chloride vapor phase epitaxy (HVPE) on 4H-SiC substrates. The pyroelectric current was generated by means of dynamic laser action. Evolution of the temperature fields was monitored by direct measurements of the surface temperature with allowance for the specific thermal heterogeneity of the AlN/SiC system. In combination with the results of pyroelectric current measurements, these data allowed the pyrocoefficient of the AlN/SiC structure to be estimated at p ≈ 3.0 μC/(m{sup 2} K). Pyroelectric figures of merit of the given structure are calculated that can be used for the comparison of pyroelectric materials intended for the creation of IR radiation detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1974

Reusable Agena study. Volume 1: Executive summary

The shuttle Agena upper stage interim tug concept is based on a building block approach. These building block concepts are extensions of existing ascent Agena configurations. Several current improvements, have been used in developing the shuttle/Agena upper stage concepts. High-density acid is used as the Agena upper stage oxidizer. The baffled injector is used in the main engine. The DF-224 is a fourth generation computer currently in development and will be flight proven in the near future. The Agena upper stage building block concept uses the current Agena as a baseline, adds an 8.5-inch (21.6 cm) extension to the fuel tank for optimum mixture ratio, uses monomethyl hydrazine as fuel, exchanges a 150:1 nozzle extension for the existing 45:1, exchanges an Autonetics DF-224 for the existing Honeywell computer, and adds a star sensor for guidance update. These modifications to the current Agena provide a 5-foot (1.52m) diameter shuttle/Agena upper stage that will fly all Vandenberg Air Force Base missions in the reusable mode without resorting to a kick motor. The delta V velocity of the Agena is increased by use of a strap-on propellant tank option. This option provides a shuttle/Agena upper stage with the capability to place almost 3900 pounds (1769 kg) into geosynchronous orbit (24 hour period) without the aid of kick motors.

Source record↗
NASA NTRS1993

Cross-tail current - Resonant orbits

A technique to generate self-consistent 1D current sheets is described. Groups of monoenergetic protons were followed in a modified Harris magnetic field. This sample current sheet is characterized by resonant quasi-adiabatic orbits. The magnetic moment of a quasi-adiabatic ion which is injected from outside a current sheet changes substantially during the orbit but returns to almost its initial value by the time the ion leaves. Several ion and electron groups were combined to produce a plasma sheet in which the charged particles carry the currents needed to generate the magnetic field in which the orbits were traced. An electric field also is required to maintain charge neutrality. Three distinct orbit types, one involving untrapped ions and two composed of trapped ions, were identified. Limitations associated with the use of a 1D model also were investigated; it can provide a good physical picture of an important component of the cross-tail current, but cannot adequately describe any region of the magnetotail in which the principal current sheet is separated from the plasma sheet boundary layer by a nearly isotropic outer position of the central plasma sheet.

Kaufmann, Richard L.↗
DOE OSTI2025

Advanced Microstructured BaTiO 3 -Embedded PVDF–HFP/PEO Film for Enhanced Triboelectric Interface in Self-Sufficient Energy Generation and Sensing

The global reliance on fossil fuels and natural gas has largely dominated the energy production field, but due to finite resource depletion and escalating greenhouse gas emissions, the immediate exploration of sustainable energy alternatives to mitigate climate change and ensure resource security has been a major concern. There has been extensive research into other more renewable methods of energy production, such as wind and hydropower. Of these current energy generation types, there are many areas of untapped potential from the mechanical movements generated ambiently not only in the large scale of power generation but also on a smaller scale. The piezoelectric and triboelectric effects are phenomena where these ambient mechanical movements can generate electrical energy. Developing a hybrid system that leverages both mechanical stress and surface charges presents an ideal opportunity to exploit these untapped energy sources. Producing a hybrid PVDF–HFP/PEO film with perovskite BaTiO 3 (BTO) enables ambient power harvesting from both mechanical movement and surface charge. The optimized cell produced a potential of up to 15 V and a current of 200 nA with a 68 kΩ resistor, a substantial increase from a base system with an average of 2.1 V and 40 nA. These hybrid TENGs offer significant potential for energy harvesting in small-scale applications, such as health monitoring devices and indicators in electric circuits.

Ybarra, Rigobert [University of Texas Rio Grande V↗
DOE OSTI2014

Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons

We show theoretically that pure spin current can be generated in zigzag edged graphene nanoribbons through the adiabatic pumping by edge selective pumping potentials. The origin of such pure spin current is the spin splitting of the edge localized states, which are oppositely spin polarized at opposite edges. In the proposed device, each edge of the ribbon is covered by two independent time-periodic local gate potentials with a definite phase difference, inducing the edge spin polarized current. When the pumping phase difference is opposite in sign between two edges, the total charge currents is zero and the pure edge spin current is generated.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Initial Investigation of the Small Feature Detection Capability of the ORNL Fast Neutron Tomographic Imaging System

A variety of fast neutron imaging simulations and measurements were performed to investigate the spatial resolution and small feature detection capability of a fast-neutron tomographic imaging system developed at Oak Ridge National Laboratory. The system uses an associated particle DT (deuterium-tritium) neutron generator as the source and 25 mm × 25 mm × 100 mm plastic scintillators as the neutron detectors. Two image quality indicators were examined: 1) a variety of long steel pins embedded axially in the interior of a polyethylene cylinder and 2) a variety of short steels pins embedded radially in the surface of a shielded polyethylene cylinder. Measurements demonstrated detectability down to approximately 3 mm. Further data analysis may show improved detection performance and allow a more precise determination of the spatial resolution and small feature detection limit. The current DT generator has a neutron production spot size of about 3.5 mm, which appears to be the limiting factor in the current system configuration.

Wright, Michael C.↗
DOE OSTI2014

Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

Dark current characteristics of 7 Monolayers (ML) InAs/ 4 ML GaSb SL pin photodiodes are simulated using ATLAS software. Using appropriate models and material parameters, we obtain good agreement between the simulated and the experimental dark current curves of photodiodes grown by molecular beam epitaxy. The n-type non-intentionally-doped (nid) SL samples exhibit a dependence of the lifetime with temperature following the T{sup -1/2} law, signature of Shockley-Read-Hall (SRH) Generation-Recombination current. We also studied the dependence of the dark current with the absorber doping level. It appears that the absorber doping level must not exceed a value of 2×10¹⁵cm⁻³, above this value the dark current is increasing with increased doping level. However for this doping value, a dark current as low as 5 × 10⁻⁹ A/cm², at 50 mV reverse bias at 77 K can be obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗