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At least 1,171 records · Page 65

Methods of Fabricating Scintillators with Radioisotopes for Beta Battery Applications

Technology has been developed for a class of self-contained, long-duration power sources called beta batteries, which harvest the energy contained in the radioactive emissions from beta decay isotopes. The new battery is a significant improvement over the conventional phosphor/solar cell concept for converting this energy in three ways. First, the thin phosphor is replaced with a thick scintillator that is transparent to its own emissions. By using a scintillator sufficiently thick to completely stop all the beta particles, efficiency is greatly improved. Second, since the energy of the beta particles is absorbed in the scintillator, the semiconductor photodetector is shielded from radiation damage that presently limits the performance and lifetime of traditional phosphor converters. Finally, instead of a thin film of beta-emitting material, the isotopes are incorporated into the entire volume of the thick scintillator crystal allowing more activity to be included in the converter without self-absorption. There is no chemical difference between radioactive and stable strontium beta emitters such as Sr-90, so the beta emitter can be uniformly distributed throughout a strontium based scintillator crystal. When beta emitter material is applied as a foil or thin film to the surface of a solar cell or even to the surface of a scintillator, much of the radiation escapes due to the geometry, and some is absorbed within the layer itself, leading to inefficient harvesting of the energy. In contrast, if the emitting atoms are incorporated within the scintillator, the geometry allows for the capture and efficient conversion of the energy of particles emitted in any direction. Any gamma rays associated with secondary decays or Bremsstrahlung photons may also be absorbed within the scintillator, and converted to lower energy photons, which will in turn be captured by the photocell or photodiode. Some energy will be lost in this two-stage conversion process (high-energy particle to low-energy photons to electric current). The geometric advantage partially offsets this as well, since the absorption depth of high-energy beta radiation is much larger than the depth of a p-n junction. Thus, in a p-n junction device, much of the radiation is absorbed far away from the junction, and the electron- hole pairs are not all effectively collected. In contrast, with a transparent scintillator the radiation can be converted to light in a larger volume, and all of the light can be collected in the active region of the photodiode. Finally, the new device is more practical because it can be used at much higher power levels without unduly shortening its lifetime. While the crystal structure of scintillators is also subject to radiation damage, their performance is far more tolerant of defects than that of semiconductor junctions. This allows the scintillator- based approach to use both higher energy isotopes and larger quantities of the isotopes. It is projected that this technology has the potential to produce a radioisotope battery with up to twice the efficiency of presently used systems.

Rensing, Noa M.↗

Effect of substrate temperature on the growth of Nb$_3$Sn film on Nb by multilayer sputtering

Nb3Sn films were fabricated by multilayer sequential sputtering on Nb substrates at substrate temperatures ranging from room temperature to 250 °C. The film material properties were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmission electron microscopy. The films’ superconducting properties were studied by four-point probe resistivity measurements from room temperature to below the superconducting critical temperature Tc. The highest Tc was17.76 K, when the multilayers were deposited at room temperature. A superconducting Nb3Sn thin film with a smoother surface morphology but a lower Tc of 17.58 K was obtained on the film deposited at a substrate temperature of 250 °C.

Sayeed, Md. Nizam↗

Atomic-scale visualization of topological spin textures in the chiral magnet MnGe

Peeking into magnetic textures Topological spin textures hold promise as robust carriers of information and have been observed in bulk materials with a specific crystal structure. One of these materials, manganese germanide (MnGe), exhibits unusual textures in bulk form. Repicky et al . used spin-polarized scanning tunneling microscopy to study surface magnetism in thin films of MnGe. Achieving high spatial resolution, the researchers observed stripe-like features consistent with a helical state. In regions where the film was slightly curved due to strain, the intersection of domain walls led to characteristic closed patterns that could be manipulated with current/voltage pulses. —JS

Science & Technology - Other Topics↗

Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping

Abstract In recent years there has been an increasing effort in improving the performance of Nb 3 Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigation of new routes to advance the high-field pinning properties, the irreversibility and the upper critical fields ( H Irr and H c2 , respectively). The effect of hafnium addition to the standard Nb-4Ta alloy has been recently demonstrated to be particularly promising and, in this paper, we investigate the origins of the observed improvements of the superconducting properties. Electron microscopy, Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS) and Atom Probe Tomography (APT) characterization clearly show that, in presence of oxygen, both fine Nb 3 Sn grains and HfO 2 nanoparticles form. Although EXAFS is unable to detect significant amounts of Hf in the A15 structure, APT does indeed reveal some residual intragrain metallic Hf. To investigate the layer properties in more detail, we created a microbridge from a thin lamella extracted by Focused Ion Beam (FIB) and measured the transport properties of Ta-Hf-doped Nb 3 Sn. H c2 (0) is enhanced to 30.8 T by the introduction of Hf, ~ 1 T higher than those of only Ta-doped Nb 3 Sn, and, even more importantly the position of the pinning force maximum exceeds 6 T, against the typical ~ 4.5–4.7 T of the only Ta-doped material. These results show that the improvements generated by Hf addition can significantly enhance the high-field performance, bringing Nb 3 Sn closer to the requirements necessary for FCC realization.

36 MATERIALS SCIENCE↗

Ultralow effective Gilbert damping and induced orbital moment in strain-engineered FeGe films with Curie temperature exceeding room temperature

We report the magnetic and magnetodynamic properties of strained epitaxial FeGe thin films on Ge(111) substrates, and confirm the generation of orbital moment in tensile-strained FeGe not seen in bulk or unstrained films. In-plane tensile strain resulted in an increase of the magnetic transition temperature to 350 K, likely the result of decreased Fe–Fe bond lengths that increase spin–orbit coupling strength. X-ray magnetic circular dichroism (XMCD) shows orbital-to-spin magnetic moment ratios of 0.18 and 0.14 for films of 18 nm and 72 nm thickness, respectively, indicative of partially quenched atomic orbitals. Finally, a very low effective Gilbert damping parameter, α eff = 0.003 ± 0.001 at room temperature was observed, suggesting that strained FeGe could be useful for spintronic applications.

36 MATERIALS SCIENCE↗

Improved Self-Assembly of P3HT with Pyrene-Functionalized Methacrylates

A block copolymer with discotic liquid crystalline behavior was synthesized using Grignard metathesis polymerization (GRIM) and initiators for continuous activator regeneration atom transfer radical polymerization (ICAR-ATRP). A novel discotic liquid crystalline mesogen, 6-(pyren-1-yloxy)hexyl methacrylate (PyMA), comprises a block that is attached to regioregular poly(3- hexylthiophene) (rr-P 3 HT) generated by GRIM and subjected to end-group modification. Due to the continuous regeneration of Cu + in the reaction mixture in ICAR-ATRP compared to conventional methods, the synthesis was successfully performed with less catalyst. The purity and yield of the final product are increased by eliminating rigorous post-synthesis purification. Stacked pyrene units have contributed to the enhanced long-range π-π interactions and aligning of the P 3 HT block as observed in thin-film X-ray diffraction (XRD). Furthermore, field-effect mobilities in the order of 10 -2 cm 2 V -1 s -1 in bottom-gate, top-contact organic field-effect transistors (OFETs) suggest an enhancement in charge transport due to the discotic electron-rich pyrene units that help mitigate the insulating effect of the methacrylate backbone. The formation of uniform microdomains of P 3 HT-bpoly(PyMA) observed with tapping mode atomic force microscopy (TMAFM) on the channel regions of OFETs indicates the unique packing of the block copolymer in comparison to pristine P 3 HT. Thermotropic properties of the novel discotic mesogen in the presence and absence of P3HT were observed with both the poly(3-hexylthiophene)-b-poly(6-(pyren-1-yloxy)hexyl methacrylate) (P3HT-b-poly(PyMA)) block copolymer and poly(6-(pyren-1-yloxy)hexyl methacrylate) (poly(PyMA)) homopolymer using polarized optical microscopy (POM) and differential scanning calorimetry (DSC).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Intergranular corrosion of Ni-30Cr in high-temperature hydrogenated water after removing surface passivating film

Abstract High-resolution transmission electron microscopy and atom probe tomography are used to characterize the initial passivation and subsequent intergranular corrosion of degraded grain boundaries in a model Ni-30Cr alloy exposed to 360 °C hydrogenated water. Upon initial exposure for 1000 h, the alloy surface directly above the grain boundary forms a thin passivating film of Cr 2 O 3 , protecting the underlying grain boundary from intergranular corrosion. However, the metal grain boundary experiences severe Cr depletion and grain boundary migration during this initial exposure. To understand how Cr depletion affects further corrosion, the local protective film was sputtered away using a glancing angle focused ion beam. Upon further exposure, the surface fails to repassivate, and intergranular corrosion is observed through the Cr-depleted region. Through this combination of high-resolution microscopy and localized passive film removal, we show that, although high-Cr alloys are resistant to intergranular attack and stress corrosion cracking, degradation-induced changes in the underlying metal at grain boundaries make the material more susceptible once the initial passive film is breached.

(S)TEM↗

Coatings could protect composites from hostile space environment

An experiment has been conducted on about 100 different material/process combinations, most of which were candidates for use in solar arrays having high power-to-weight ratios. These substances were exposed to the LEO environment during Long-Duration Exposure Facility Experiment A0171 in order to evaluate the synergistic effects of the LEO environment on the materials' mechanical, electrical, and optical properties. Materials evaluated include solar cells, cover slips having antireflectance coatings, adhesives, encapsulants, reflective materials, mast and harness materials, structural composites, and thermal control thin films. About one-sixth of the experiment tray was devoted to composite-material tensile specimens, which were specifically to be studied for changes in their mechanical properties. Preliminary results of the surface-damage evaluation are presented. These surface effects are dominated by atomic-oxygen erosion and micrometeoroid/space debris impacts.

Whitaker, Ann F.↗

Suppressing Atmospheric Degradation of Sulfide-Based Solid Electrolytes via Ultrathin Metal Oxide Layers

Sulfide-based solid-state electrolytes (SSEs) are promising materials with superior Li-ion conductivity; however, their poor atmospheric stability limits commercial manufacturing at scale. Here, we investigate the impact of ultrathin metal oxide layers deposited via atomic layer deposition (ALD) on the stability of Li 6 PS 5 Cl (LPSCl). Al 2 O 3 layers grown directly on LPSCl particles significantly stabilize the surface chemistry and Li-ion transport properties relative to uncoated material upon exposure to both an ambient atmosphere (22% relative humidity, RH) and humidified O 2 (100% RH). Detailed investigations indicate that coatings impede the surface and bulk degradation kinetics of exposed materials, even for coatings as thin as ∼1 Å. Furthermore, this suggests that stabilization is due to more than just a physical barrier. Shifts in valence band edge positions of coated LPSCl indicate that ALD coatings alter the surface electronic structure and resulting oxidation tendency of underlying LPSCl, suggesting new avenues to improving the environmental stability of sulfide SSEs.

Atmospheric chemistry↗

Low temperature atomic layer deposition of PbO 2 for electrochemical applications

A low temperature atomic layer deposition (ALD) process for PbO 2 was developed using bis(1-dimethylamino-2-methyl-2-propanolate)lead(II), Pb(DMAMP) 2 , and O 3 as the reactants, with a high growth rate of 2.6 Å/cycle. PbO 2 readily reduces under low oxygen partial pressures at moderate temperatures making it challenging to deposit ALD PbO 2 from Pb 2+ precursors. However, thin films deposited with this process showed small crystalline grains of α-PbO 2 and β-PbO 2 , without signs of reduced PbO x phases. The ALD PbO 2 thin films show the high electrical conductivity characteristic of bulk PbO 2 . In situ measurements of ALD PbO 2 film conductivity during growth suggest a reaction mechanism by which sub-surface oxygen mobility contributes to the growth of resistive PbO or PbO x during the Pb(DMAMP) 2 surface reaction step, which is only fully oxidized from Pb 2+ to Pb 4+ during the O 3 reaction step. These films were electrochemically reduced to PbSO 4 in H 2 SO 4 and then reoxidized to PbO 2 , demonstrating their suitability for use as an electrode material for fundamental battery research and other electrochemical applications.

atomic layer deposition↗

Evolution of standardization and dissemination of cryo-EM structures and data jointly by the community, PDB, and EMDB

Cryogenic electron microscopy (cryo-EM) methods began to be used in the mid-1970s to study thin and periodic arrays of proteins. Following a half-century of development in cryo-specimen preparation, instrumentation, data collection, data processing and modeling software, cryo-EM has become a routine method for solving structures from large biological assemblies to small biomolecules at near to true atomic resolution. This review explores the critical roles played by the Protein Data Bank (PDB) and Electron Microscopy Data Bank (EMDB) in partnership with the community to develop the necessary infrastructure to archive cryo-EM maps and associated models. Public access to cryo-EM structure data has in turn facilitated better understanding of structure-function relationships and advancement of image processing and modeling tool development. The partnership between the global cryo-EM community and PDB and EMDB leadership has synergistically shaped the standards for metadata, one-stop deposition of maps and models, and validation metrics to assess the quality of cryo-EM structures. The advent of cryo-electron tomography (cryo-ET) for in situ molecular cell structures at a broad resolution range and their correlations with other imaging data introduces new data archival challenges in terms of data size and complexity in the years to come.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

microshutter arrays↗

Measurement and analysis of the Doppler broadened energy spectra of gamma radiation originating from the annihilation of positrons incident on clean and adsorbate-covered surfaces

We present measurements and theoretical modeling demonstrating the capability of coincidence Doppler broadened (CDB) annihilation gamma spectroscopy to provide element-specific information from the topmost atomic layer of surfaces. Our measurements show that the energy spectra of Doppler-shifted annihilation gamma photons emitted following the annihilation of positrons from the topmost atomic layers of clean and adsorbate covered surfaces of gold (Au), silver (Ag) and copper (Cu) differ significantly. The shape of the Doppler-broadened gamma spectrum, as analyzed using ratio curves, indicates that the elemental composition of the surface can still be identified despite contributions from positronium annihilation and a significant reduction in core electron annihilation. We estimate the chemical composition of the various probed surfaces by modeling the ratios of the measured Doppler spectra with respect to the Doppler spectra from a clean Cu surface using a linear combination of calculated ratio curves. The fitting of the experimental ratio curves was used to obtain an estimate of the elemental composition of Cu surfaces with sulfur segregation, oxygen adsorption, a thin film of Selenium (Se), and a single layer of graphene (SLG). A similar analysis was performed on the Ag surface with environmental adsorbates, the same surface after argon ion sputtering, as well as a sputter cleaned Au surface. The surface compositions obtained from the analysis of the CDB data were compared to the compositions obtained using positron annihilation induced Auger electron spectroscopy (PAES). Our results show that CDB can detect, identify, and quantify, sub-monolayer adsorbates and a single atomic layer deposited on metal substrates.

Lotfimarangloo, Sima [Univ. of Texas, Arlington, T↗

Controlling Pt Crystal Defects on the Surface of Ni–Pt Core–Shell Nanoparticles for Active and Stable Electrocatalysts for Oxygen Reduction

A strategy of direct growth of Pt on Ni was used to create and control Pt crystal defects on the surface of Ni–Pt core–shell nanoparticles. The control over the types of defects was easily achieved by changing the surfactant system. Here, in this work, two types of crystal defects have been introduced into Ni–Pt core–shell nanoparticles: polycrystalline shells with multiple grain boundaries and step-edge shells with undercoordinated atoms at corners and steps. We show that the step-edge shell has a higher specific activity for the oxygen reduction reaction (ORR), while the thinner polycrystalline shell results in a higher activity per mass and stability. Our results suggest that Ni–Pt core–shell nanoparticles with a thin Pt shell that have high density of crystal defect should be targeted for high performance ORR catalysts.

36 MATERIALS SCIENCE↗

Small energy gap revealed in CrBr 3 by scanning tunneling spectroscopy

CrBr 3 is a layered van der Waals material with magnetic ordering down to the 2D limit. For decades, based on optical measurements, it is believed that the energy gap of CrBr 3 is in the range of 1.68–2.1 eV. However, controversial results have indicated that the band gap of CrBr 3 is possibly smaller than that. An unambiguous determination of the energy gap is critical to the correct interpretations of the experimental results of CrBr 3 . Here, we present the scanning tunneling microscopy and spectroscopy (STM/S) results of CrBr 3 thin and thick flakes exfoliated onto highly ordered pyrolytic graphite (HOPG) surfaces and density functional theory (DFT) calculations to reveal the small energy gap (peak-to-peak energy gap to be 0.57 ± 0.04 eV; or the onset signal energy gap to be 0.29 ± 0.05 eV from dI/dV spectra). Atomic resolution topography images show the defect-free crystal structure and the dI/dV spectra exhibit multiple peak features measured at 77 K. The conduction band – valence band peak pairs in the multi-peak dI/dV spectrum agree very well with all reported optical transitions. STM topography images of mono- and bi-layer CrBr 3 flakes exhibit edge degradation due to short air exposure (~15 min) during sample transfer. The unambiguously determined small energy gap settles the controversy and is the key in better understanding CrBr 3 and similar materials.

36 MATERIALS SCIENCE↗

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Most SiC devices are implemented in homoepitaxial films grown on 4H/6H-SiC wafers with surfaces 3 degrees to 8 degrees off-axis from the (0001) basal plane. This approach has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This presentation describes recent advances in SiC epitaxial growth that begun to overcome the above shortcomings for arrays of mesas patterned into on-axis 4H/6H-SiC wafers. First, we demonstrated that atomic-scale surface steps can be completely eliminated from 4H/6H-SiC mesas via on-axis homoepitaxial step-flow growth, forming (0001) basal plane surfaces (up to 0.4 mm x 0.4 mm) for larger than previously thought possible. Step-free surface areas were then extended by growth fo thin lateral cantilevers from the mesa tops. These lateral cantilevers enabled substrate defects to be reduced and relocated in homoepitaxial films in a manner not possible with off-axis SiC growth. Finally, growth of vastly improved 3C-SiC heterofilms was achieved on 4H/6H-SiC mesas using the recently develop step-free surface heteroepitaxy process. These epitaxial growth developments should enable improved homojunction and heterojunction silicon carbide prototype devices.

Neudeck, Philip G.↗

In-Situ Laser Diagnostics to Understand Plasma-Surface Interactions in Titanium Thin Film Deposition

During the current project period the following tasks were completed: (1) We demonstrated the feasibility of a new way of measuring CH3 radicals in a plasma environment using a single, femtosecond (fs) pulsed laser for the first time, in a CH4 + Ar flow. A single fs pulsed Ti:Sa laser was split into two beams and with beam conversion using crystals we generatedtwo beams of 275 nm and 205 nm. The 275 nm was used to predissociate the CH3 radicals to CH2+H, followed by 205 nm Two Photon Laser Induced Fluorescence (TALIF) detection of H atoms, with a 11 ns delay from 275 nm predissociation pulse. (2) We demonstrated preliminary CH3 concentration measurements with spatial (< 100 µm) and time resolution (< 10 ns) by image processing of H and Kr TALIF signal images. (3) The methodology to quantify CH3 concentrations was developed. (4) Preliminary measurements of laser dissociation cross sections for CH4 and CH3 to (CH3+H), and (CH2+H), respectively, were conducted. (5) 275 nm laser dissociation of CH4 is a multiphoton process, and the CH4 dissociation cross section is a more sensitive function of the laser pulse energy than CH4 concentration. In the coming months, we will make more precise measurements of the dissociation cross sections, 𝑘275, 𝐶𝐻4 and 𝑘275, 𝐶𝐻3, by varying the laser energy while keeping the flow composition and conditions constant. This will enable more precise quantification of CH3 radical concentrations. More detailed measurements of CH3 radicals will be conducted in the following months of 2025 (Sept-Dec) in a Titanium Isopropoxide (TIP) + H2 + Ar flow meant for pure phase Ti thin film deposition by Chemical Vapor Deposition (CVD). More precise measurements of 275 nm laser dissociation cross sections for CH4 (to CH3 + H) and CH3 (to CH2 + H) will be conducted in the future. Detailed 275 nm laser predissociation cross sections for CH4 and CH3 dissociation to (CH3+H), and (CH2+H), respectively, as a function of gas heating, plasma power, and laser pulse energy will be evaluated. This will enable quantification of CH3 concentrations in the precursor flow over a substrate with time and spatial resolution. Comparison of the concentrations with 2D numerical simulations can lead to understanding of plasma surface interactions during pure metallic Ti thin film deposition using environmentally safer non-halogen TIP precursor. Flow conditions for pure Ti thin film deposition using non-halogen precursor (TIP) will be identified in the following months.

Uddi, Mruthunjaya [Advanced Cooling Technologies, ↗

Quadratic magnetoresistance across the insulator–metal transition in V4O7 thin films

We present a comparative magnetotransport study of V4O7 thin films grown simultaneously on single-crystal Al2O3 (r-cut) and amorphous SiO2 substrates, to examine substrate-induced effects on electronic transport across the insulator–metal transition (IMT). Temperature-dependent resistivity reveals a broad electronic ordering regime below the IMT, with both films exhibiting similar transition temperatures but differing by nearly an order of magnitude in absolute resistivity. Despite this strong substrate dependence of the resistivity scale, the magnetoresistance remains predominantly quadratic in magnetic field over wide temperature intervals for both substrates. Analysis of the quadratic magnetoresistance defines an effective mobility scale that evolves systematically across the IMT and exhibits a similar temperature dependence for the two films. Structural characterization, including atomic-resolution scanning transmission electron microscopy of the V4O7/Al2O3 interface and azimuthal X-ray diffraction measurements, reveals a sharp interface and well-defined in-plane crystallographic registry for the r-cut film, in contrast to the rotationally averaged in-plane structure expected for films grown on amorphous SiO2. These results indicate that while substrate-controlled structural registry modifies the resistivity scale, the quadratic magnetotransport response across the IMT remains largely robust, providing a consistent diagnostic of electronic transport in V4O7 thin films.

25 ENERGY STORAGE↗