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At least 1,171 records · Page 65

Voltage-induced broad-spectrum reflectivity change with surface-plasmon waves

Voltage-induced broad-spectrum reflectivity change with surface-plasmon waves is reported. When white light is incident at a metal/electro-optical material interface, surface-plasmon waves can be excited under phase match conditions. This surface-plasmon resonance depends on the dielectric constants of both the metal and the electro-optical material. Photons in the surface-plasmon resonance wavelength range are absorbed by the interface. Since metals have large imaginary parts of their dielectric constants, the surface-plasmon resonances are broad and may cover all visible wavelengths. Applying voltage to the electro-optical material to change its dielectric constant can result in a change in the reflectivity at the interface. Experimental results showed a reflectivity change from almost 0% to about 40% under an applied voltage using a liquid-crystal and nickel film structure, and the results had good agreement with theoretical calculations. The theoretical calculations also predicted a 90% reflectivity recovery by exciting surface-plasmon waves at a Rh-Al/electro-optical material interface. These results demonstrate that a high efficiency white light modulator can be built using surface-plasmon excitations.

white light modulator↗

High Voltage Power Supply Design Guide for Space

This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

Bever, Renate S.↗

Multiple high voltage output DC-to-DC power converter

Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

Cronin, Donald L.↗

Voltage Sensors Monitor Harmful Static

A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

Source record↗

Application of carbon nanotube hold-off voltage for determining gas composition

Method and system for determining chemical composition of a single-component or multiple-component gas, using a discharge holdoff mechanism. A voltage difference V between two spaced apart electrodes is brought to a selected value and held, the holdoff time interval .DELTA.t(V;ho) required before gas discharge occurs is measured, and the associated electrical current or cumulative electrical charge is measured. As the voltage difference V increases, the time interval length .DELTA.t(V;ho) decreases monotonically. Particular voltage values, V.sub..infin. and V.sub.0, correspond to initial appearance of discharge (.DELTA.t.apprxeq..infin.) and prompt discharge (.DELTA.t.apprxeq.0). The values V.sub..infin. and V.sub.0 and the rate of decrease of .DELTA.t(V;ho) and/or the rate of increase of current or cumulative charge with increasing V are characteristic of one or more gas components present.

Schipper, John F.↗

Integration Testing of a Modular Discharge Supply for NASA's High Voltage Hall Accelerator Thruster

NASA s In-Space Propulsion Technology Program is developing a high performance Hall thruster that can fulfill the needs of future Discovery-class missions. The result of this effort is the High Voltage Hall Accelerator thruster that can operate over a power range from 0.3 to 3.5 kW and a specific impulse from 1,000 to 2,800 sec, and process 300 kg of xenon propellant. Simultaneously, a 4.0 kW discharge power supply comprised of two parallel modules was developed. These power modules use an innovative three-phase resonant topology that can efficiently supply full power to the thruster at an output voltage range of 200 to 700 V at an input voltage range of 80 to 160 V. Efficiencies as high as 95.9 percent were measured during an integration test with the NASA103M.XL thruster. The accuracy of the master/slave current sharing circuit and various thruster ignition techniques were evaluated.

Pinero, Luis R.↗

Three-Function Logic Gate Controlled by Analog Voltage

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that performs one of three different logic functions, depending on the level of an externally applied control voltage, V(sub sel). Specifically, the circuit acts as A NAND gate at V(sub sel) = 0.0 V, A wire (the output equals one of the inputs) at V(sub sel) = 1.0 V, or An AND gate at V(sub sel) = -1.8 V. [The nominal power-supply potential (VDD) and logic "1" potential of this circuit is 1.8 V.] Like other multifunctional circuits described in several prior NASA Tech Briefs articles, this circuit was synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. An evolved circuit can be tested by computational simulation and/or tested in real hardware, and the results of the test can provide guidance for refining the design through further iteration. The evolutionary synthesis of electronic circuits can now be implemented by means of a software package Genetic Algorithms for Circuit Synthesis (GACS) that was developed specifically for this purpose. GACS was used to synthesize the present trifunctional circuit. As in the cases of other multifunctional circuits described in several prior NASA Tech Briefs articles, the multiple functionality of this circuit, the use of a single control voltage to select the function, and the automated evolutionary approach to synthesis all contribute synergistically to a combination of features that are potentially advantageous for the further development of robust, multiple-function logic circuits, including, especially, field-programmable gate arrays (FPGAs). These advantages include the following: This circuit contains only 9 transistors about half the number of transistors that would be needed to obtain equivalent NAND/wire/AND functionality by use of components from a standard digital design library. If multifunctional gates like this circuit were used in the place of the configurable logic blocks of present commercial FPGAs, it would be possible to change the functions of the resulting digital systems within shorter times. For example, by changing a single control voltage, one could change the function of thousands of FPGA cells within nanoseconds. In contrast, typically, the reconfiguration in a conventional FPGA by use of bits downloaded from look-up tables via a digital bus takes microseconds.

Zebulum, Ricardo↗

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Okojie, Robert S.↗

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

Seefeldt, James↗

High-Voltage Clock Driver for Photon-Counting CCD Characterization

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

Baker, Robert↗

Integration Test of the High Voltage Hall Accelerator System Components

NASA Glenn Research Center is developing a 4 kilowatt-class Hall propulsion system for implementation in NASA science missions. NASA science mission performance analysis was completed using the latest high voltage Hall accelerator (HiVHAc) and Aerojet-Rocketdyne's state-of-the-art BPT-4000 Hall thruster performance curves. Mission analysis results indicated that the HiVHAc thruster out performs the BPT-4000 thruster for all but one of the missions studied. Tests of the HiVHAc system major components were performed. Performance evaluation of the HiVHAc thruster at NASA Glenn's vacuum facility 5 indicated that thruster performance was lower than performance levels attained during tests in vacuum facility 12 due to the lower background pressures attained during vacuum facility 5 tests when compared to vacuum facility 12. Voltage-Current characterization of the HiVHAc thruster in vacuum facility 5 showed that the HiVHAc thruster can operate stably for a wide range of anode flow rates for discharge voltages between 250 and 600 volts. A Colorado Power Electronics enhanced brassboard power processing unit was tested in vacuum for 1,500 hours and the unit demonstrated discharge module efficiency of 96.3% at 3.9 kilowatts and 650 volts. Stand-alone open and closed loop tests of a VACCO TRL 6 xenon flow control module were also performed. An integrated test of the HiVHAc thruster, brassboard power processing unit, and xenon flow control module was performed and confirmed that integrated operation of the HiVHAc system major components. Future plans include continuing the maturation of the HiVHAc system major components and the performance of a single-string integration test.

Hall propulsion system↗

Spacecraft Charging Current Balance Model Applied to High Voltage Solar Array Operations

Spacecraft charging induced by high voltage solar arrays can result in power losses and degradation of spacecraft surfaces. In some cases, it can even present safety issues for astronauts performing extravehicular activities. An understanding of the dominant processes contributing to spacecraft charging induced by solar arrays is important to current space missions, such as the International Space Station, and to any future space missions that may employ high voltage solar arrays. A common method of analyzing the factors contributing to spacecraft charging is the current balance model. Current balance models are based on the simple idea that the spacecraft will float to a potential such that the current collecting to the surfaces equals the current lost from the surfaces. However, when solar arrays are involved, these currents are dependent on so many factors that the equation becomes quite complicated. In order for a current balance model to be applied to solar array operations, it must incorporate the time dependent nature of the charging of dielectric surfaces in the vicinity of conductors1-3. This poster will present the factors which must be considered when developing a current balance model for high voltage solar array operations and will compare results of a current balance model with data from the Floating Potential Measurement Unit4 on board the International Space Station.

Willis, Emily M.↗

Characterization of DBD Plasma Actuators Performance without External Flow : Thrust-Voltage Quadratic Relationship in Logarithmic Space for Sinusoidal Excitation - Part I

We present results of thrust measurements of Dielectric Barrier Discharge (DBD) plasma actuators. We have used a test setup, measurement, and data processing methodology that we developed in prior work. The tests were conducted with High Density Polyethylene (HDPE) actuators of three thicknesses. The applied voltage driving the actuators was a pure sinusoidal waveform. The test setup was suspended actuators with a partial liquid interface. The tests were conducted at low ambient humidity. The thrust was measured with an analytical balance and the results were corrected for anti-thrust to isolate the plasma generated thrust. Applying this approach resulted in smooth and repeatable data. It also enabled curve fitting that yielded quadratic relations between the plasma thrust and voltage in log-log space at constant frequencies. The results contrast power law relationships developed in literature that appear to be a rough approximation over a limited voltage range.

Dielectric Barrier Discharge↗

Key Elements of a Low Voltage, Ultracompact Plasma Spectrometer

Taking advantage of technological developments in wafer-scale processing over the past two decades, such as deep etching, 3-D chip stacking, and double-sided lithography, we have designed and fabricated the key elements of an ultracompact 1.5cm (exp 3)plasma spectrometer that requires only low-voltage power supplies, has no microchannel plates, and has a high aperture area to instrument volume ratio. The initial design of the instrument targets the measurement of charged particles in the 3-20keV range with a highly directional field of view and a 100 duty cycle; i.e., the entire energy range Is continuously measured. In addition to reducing mass, size, and voltage requirements, the new design will affect the manufacturing process of plasma spectrometers, enabling large quantities of identical instruments to be manufactured at low individual unit cost. Such a plasma spectrometer is ideal for heliophysics plasma investigations, particularly for small satellite and multispacecraft missions. Two key elements of the instrument have been fabricated: the collimator and the energy analyzer. An initial collimator transparency of 20 with 3deg x 3deg angular resolution was achieved. The targeted 40 collimator transparency appears readily achievable. The targeted energy analyzer scaling factor of 1875 was achieved; i.e.20 keV electrons were selected for only a 10.7V bias voltage in the energy analyzer.

Scime, E. E.↗

High Voltage Hybrid Electric Propulsion - Multilayered Functional Insulation System (MFIS) NASA-GRC

High power transmission cables pose a key challenge in future Hybrid Electric Propulsion Aircraft. The challenge arises in developing safe transmission lines that can withstand the unique environment found in aircraft while providing megawatts of power. High voltage AC, variable frequency cables do not currently exist and present particular electrical insulation challenges since electrical arcing and high heating are more prevalent at higher voltages and frequencies. Identifying and developing materials that maintain their dielectric properties at high voltage and frequencies is crucial.

Power distribution↗

Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs

We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.

Silicon Carbide↗

UPGRADING THE CEBAF INJECTOR WITH A NEW BOOSTER, HIGHER VOLTAGE GUN, AND HIGHER FINAL ENERGY

The Continuous Electron Beam Accelerator Facility (CEBAF) accelerator at Jefferson Lab will be upgraded from 6 GeV to 12 GeV in the next few years. To meet the requirement of the new machine and to take the opportunity to improve the beam quality, the CEBAF injector will be upgraded with a higher voltage gun, a new booster, and a new accelerating RF module. The CEBAF injector creates and accelerates three beams at different currents simultaneously. The beams are interleaved, each at one third of the RF frequency, traveling through the same beam line. The higher voltage gun will lower the space charge effects. The new booster with optimized beam dynamics will complete the bunching process and provide initial acceleration matched to the new gun voltage. Using our latest SRF design, the new booster has significantly lower x/y coupling effects that should improve our beam setup and operation for the highly sensitive parity experiments scheduled for the CEBAF's future. Finally, the new accelerating RF module will roughly double the injector final energy to match the rest of the 12 GeV accelerator. In this paper we will provide more detail about this upgrade.

43 PARTICLE ACCELERATORS↗

Operational Results of Pulse Shaping Techniques for the High Voltage Convertor Modulator

The High Voltage Converter Modulators (HVCMs) are used to power the RF klystrons used throughout the accelerator systems at Spallation Neutron Source (SNS). The output voltage of the HVCM has significant droop and ripple which, combined with low level RF (LLRF) system limitations, affect performance and efficiency of accelerator cavities. In conjunction with the progress in development of the new HVCM controller, different pulse modulation techniques were implemented and studied on the test modulator. This paper discusses the results of implementation of frequency modulation and phase modulation on output voltage. Operational data, including full average power operation, of test modulator is also discussed. Future plans for the new modulation scheme will be presented.

Patel, Gunjan P↗