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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Electrocatalytic and Optoelectronic Characteristics of the Two-Dimensional Titanium Nitride Ti 4 N 3 T x MXene

A relatively new class of two-dimensional (2D) materials called MXenes have garnered tremendous interest in the field of energy storage and conversion. Thus far nearly all MXenes reported experimentally have been described as metals, with a lone report of a mixed-metal carbide phase exhibiting semiconducting character. Here, we report the optical, electrocatalytic, and electrical properties of the 2D Ti 4 N 3 T x MXene (Tx = basal plane surface terminating groups) and show that this material exhbits both metallic and semiconducting behaviors. We provide complete structural characterization of exfoliated Ti 4 N 3 T x MXene and assign T x = O and/or OH and find that this material is susceptible to surface oxidation. Optical experiments indicate that the exfoliated Ti 4 N 3 T x MXene forms a hybrid with a thin surface oxide layer resulting in visible light absorbtion at energies greater than ~2.0 eV and an excitation wavelength-dependent defect-state emission over a broad range centered at ~2.9 eV. As an electrocatalyst for the hydrogen evolution reaction, the exfoliated Ti 4 N 3 T x shows an overpotential of ~300 mV at -10 mA cm -2 and a Tafel slope of ~190 mV dec -1 . Finally, we observe semiconducting behavior at temperatures below ~90 K from temperature-dependent transport measurements under 5 T magnetic field likely resulting from the thin oxide layer. These results unveil the intriguing optical, electrocatalytic, and electrical properties of this 2D Ti 4 N 3 T x MXene that expands the potential of these new 2D materials into electrocatalysis and (opto)electronic applications.

2D materials↗
DOE OSTI2022

Laser-Assisted Synthesis of Monolayer 2D MoSe 2 Crystals with Tunable Vacancy Concentrations: Implications for Gas and Biosensing

We report tuning the structural and electronic properties of atomically thin two-dimensional (2D) materials via defect and vacancy engineering is the key to enabling their potential use in various applications, including electronics, energy, and sensing devices. Vacancies are, for instance, becoming highly promising for the enhanced interaction of gases and biomolecules with 2D materials in energy and sensing applications. However, the deterministic generation of desirable vacancies with tunable concentrations remains a challenge in 2D materials due to the limitations in the current growth methods, such as the complex reaction chemistries and gas flow dynamics. Therefore, engineering defects and vacancies in 2D materials have been mainly limited to destructive top-down processes such as heating, ion bombardments, and laser postprocessing. Here, we introduce a single-step bottom-up synthesis approach for the growth of monolayer MoSe 2 crystals with tunable vacancy concentrations. This method utilizes the spatiotemporal properties and adjustable power densities of the lasers to control the vaporization dynamics of the stoichiometric MoSe 2 powders. Such a mechanism in the vaporization allows us to grow tunable stoichiometry monolayer MoSe 2–x crystals on the substrates. The localized and time-controlled (250 ms to 2 s) vaporization of the MoSe 2 powder by a CO 2 laser enables the formation of monolayer crystals with controlled vacancy concentrations ranging from ~1 to 20%. The effects of laser power, laser irradiation time, and background pressure on the tuning range and subsequent properties of the crystals are investigated and quantified using Raman and photoluminescence spectroscopy, scanning transmission electron microscopy (STEM), and time-correlated single-photon counting (TCSPC). This bottom-up synthesis is a promising approach that allows the deterministic vacancy tuning for future electronics and, in particular, gas and biosensing applications without the need for further postprocessing and potential structural disruption of the crystals.

2D materials↗
DOE OSTI2024

Thermal-Strain-Enabled Enhanced Emission from UV Laser-Induced Defect Levels near the Surface of Multilayer MoS 2

Monolayer two-dimensional (2D) materials have been intensively studied while research on multilayers is still in its infancy. Here, we induce defects inside bulk MoS 2 through thermal annealing and near the surface of multilayer MoS 2 using 375 nm laser irradiation, and investigate their photoluminescence (PL) and fluorescence lifetime imaging (FLIM). Enhanced emission is limited within a certain MoS 2 thickness. The observed enhanced emission is evidenced by a threshold behavior in super-linear PL intensity increase, strong polarization effects, and increased lifetime of defect peak. The laser power threshold for enhanced emission is much smaller in defects near the surface than that inside the bulk of multilayer MoS 2 . The mechanical strain from a wrinkle of the sample further lowers the laser power threshold for enhanced emission. By exciting with a 639 nm laser that is close to the fundamental gap between the conduction band minimum and the valence band maximum, the lifetime of defect enhanced emission increased by 5 times. Furthermore, one of the competing indirect bandgap emissions disappears, and the defect emission peak dominates the PL spectrum in the wrinkle area with a strain. Furthermore, the discovered principle can be applied to future studies on the integration of enhanced emission and single photon emission involving selectively depopulating the conduction band of the host crystal to defect levels for quantum emitters.

2D materials↗
DOE OSTI2022

Metal-Confined Synthesis of ZnS 2 Monolayer Catalysts for Dinitrogen Electroreduction

Atomically thin two-dimensional (2D) materials are of great significance in catalytic, energy storage, and electronic devices. So far, such materials are limited to several categories with layered structures. Herein, we predict an unusual atomically thin ZnS2 monolayer and exploit a metal-confined chemical vapor deposition strategy for the successful preparation of such an unprecedented 2D material, where a sulfide monolayer was first grown on metal nanosheets to form a sulfide/metal/sulfide sandwich structure, and then, the metal core was etched out to obtain freestanding sulfide monolayers. As shown in this work, the ZnS 2 monolayer possesses unique electron-deficient properties related to the atomic structure and exhibits high catalytic activity for dinitrogen electroreduction. Our work will enable creating 2D TMD materials that were previously inexistent or inaccessible.

2D Materials↗
DOE OSTI2026

4-Electron Oxygen Reduction Reaction (ORR) with Iron Phthalocyanine (FePc) Functionalized Nanowire Templated-3D Fuzzy Graphene (NT-3DFG)

Iron phthalocyanine (FePc) is a promising alternative to platinum-based catalysts for sustainable energy devices; however, the plane-symmetry of Fe-N 4 sites, random aggregation, and poor conductivity of FePc present major barriers for their application as oxygen reduction reaction (ORR) electrocatalysts. Here, we report the synergistic effects of FePc electrocatalysts supported by a nanowire-templated three-dimensional fuzzy graphene (FePc@NT-3DFG) substrate. The in situ functionalized oxygen groups (iFOGs) at the edge of NT-3DFG localize Fe active sites in FePc under alkaline ORR conditions. With a uniform FePc distribution through many single layers of graphene, the NT-3DFG substrates improve O 2 adsorption and catalytic activity while stabilizing the electrochemical activity during reactions. The FePc@NT-3DFG catalyst exhibits fast ORR kinetics with an extremely low Tafel slope of 28.3 ± 2.7 mV dec −1 , a higher half-wave potential of 0.911 ± 0.004 V (vs RHE), and notable long-term stability at 0.5 V (vs RHE) of 96.0 ± 0.4% retention after 30 h. Surface chemistry spectra validate electronic configuration modification of Fe at the iFOGs. Density functional theory calculations indicate that the extra layers of graphene improve oxygen adsorption. Moreover, additional exploration of other transition metal phthalocyanines supports the effects of iFOGs through the transition toward 4e − ORR. This work offers an expanded strategy for active site modification through edge-based graphene substrates for 4e − ORR.

X-ray absorption spectroscopy↗
DOE OSTI2020

Flash Graphene from Plastic Waste

In this work, an approach to upcycling plastic waste (PW) products is presented. The method relies on flash Joule heating (FJH) to convert PW into flash graphene (FG). In addition to FG, the process results in the formation of carbon oligomers, hydrogen, and light hydrocarbons. In order to make high quality graphene, a sequential alternating current (AC) and direct current (DC) flash is used. Here, the FJH process requires no catalyst and works for PW mixtures, which makes the process suitable for handling landfill PW. The energy required to convert PW to FG is ~ 23 kJ/g or ~ $125 in electricity per ton of PW, potentially making this process economically attractive for scale-up. The FG was characterized by Raman spectroscopy and had a I 2D /I G peak ratio up to 6 with a low-intensity D band. Moreover, transmission electron microscopy and X-ray diffraction analysis show that the FG is turbostratic with an interlayer spacing of 3.45 Å. The large interlayer spacing will facilitate its dispersion in liquids and composites. Analysis of FG dispersions in 1% Pluronic aqueous solution shows that concentrations up to 1.2 mg/mL can be achieved. The carbon oligomers that distilled from the process were characterized by Fourier-transform infrared spectroscopy and have chemical structures similar to the starting PW. Initial analysis of gas phase products shows the formation of considerable amounts of hydrogen along with other light hydrocarbons. Since graphene is naturally occurring and it shows a low toxicity profile, this could be an environmentally beneficial method to upcycle PE.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

Short-Range Crystalline Order-Tuned Conductivity in Cr 2 Si 2 Te 6 van der Waals Magnetic Crystals

Two-dimensional magnetic materials (2DMMs) are significant not only for studies on the nature of 2D long-range magnetic order but also for future spintronic devices. Of particular interest are 2DMMs where spins can be manipulated by electrical conduction. Whereas Cr 2 Si 2 Te 6 exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in Cr 2 Si 2 Te 6 , on the length scale below 0.6 nm, induces a substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results in this work will be helpful in designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Probing Electron Beam Induced Transformations on a Single-Defect Level via Automated Scanning Transmission Electron Microscopy

A robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an operational microscope, enabling the exploration of the dynamics of specific atomic configurations under electron beam irradiation via an automated experiment in STEM. Combined with beam control, this approach allows studying beam effects on selected atomic groups and chemical bonds in a fully automated mode. Here, in this study, we demonstrate atomically precise engineering of single vacancy lines in transition metal dichalcogenides and the creation and identification of topological defects in graphene. The ELIT-based approach facilitates direct on-the-fly analysis of the STEM data and engenders real-time feedback schemes for probing electron beam chemistry, atomic manipulation, and atom by atom assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nanoscale View of Engineered Massive Dirac Quasiparticles in Lithographic Superstructures

Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects, and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is reported, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of 0.64 ± 0.03 eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The methodology demonstrates band structure engineering guided by directly viewing structurally and electrically tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys

Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS 2 crystals into Janus WSSe and WSe 2 by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS 2 transforms through WS 2(1–x) Se 2x alloys to WSe 2 and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.

2D materials↗
DOE OSTI2023

Hybrid Heterostructures to Generate Long-Lived and Mobile Photocarriers in Graphene

We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor F 8 ZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS 2 or WS 2 few-layer flakes on a graphene film, followed by deposition of F 8 ZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of F 8 ZnPc/few-layer-MoS 2 /graphene, electrons excited in F 8 ZnPc can transfer to graphene and thus be separated from the holes that reside in F 8 ZnPc. By increasing the thickness of MoS 2 , these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm 2 V–1 s –1 . Graphene doping with mobile holes is also demonstrated with WS 2 as the middle layers. Furthermore, these artificial heterostructures can improve the performance of graphene-based optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Nanoscale Periodic Trapping Sites for Interlayer Excitons Built by Deformable Molecular Crystal on 2D Crystal

The nanoscale moiré pattern formed at 2D transition-metal dichalcogenide crystal (TMDC) heterostructures provides periodic trapping sites for excitons, which is essential for realizing various exotic phases such as artificial exciton lattices, Bose–Einstein condensates, and exciton insulators. At organic molecule/TMDC heterostructures, similar periodic potentials can be formed via other degrees of freedom. Here, we utilize the structure deformability of a 2D molecular crystal as a degree of freedom to create a periodic nanoscale potential that can trap interlayer excitons (IXs). Specifically, two semiconducting molecules, PTCDI and PTCDA, which possess similar band gaps and ionization potentials but form different lattice structures on MoS 2 , are investigated. The PTCDI lattice on MoS 2 is distorted geometrically, which lifts the degeneracy of the two molecules within the crystal’s unit cell. The degeneracy lifting results in a spatial variation of the molecular orbital energy, with an amplitude and periodicity of ~0.2 eV and ~2 nm, respectively. On the other hand, no such energy variation is observed in PTCDA/MoS 2 , where the PTCDA lattice is much less distorted. Furthermore, the periodic variation in molecular orbital energies provides effective trapping sites for IXs. For IXs formed at PTCDI/MoS 2 , rapid spatial localization of the electron in the organic layer toward the interface is observed, which demonstrates the effectiveness of these interfacial IX traps.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Atomistic Probing of Defect-Engineered 2H-MoTe 2 Monolayers

Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe 2 monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe 2 samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe 2 , respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe 2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.

2H-MoTe 2↗