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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Array Phase Shifters: Theory and Technology

While there are a myriad of applications for microwave phase shifters in instrumentation and metrology, power combining, amplifier linearization, and so on, the most prevalent use is in scanning phased-array antennas. And while this market continues to be dominated by military radar and tracking platforms, many commercial applications have emerged in the past decade or so. These new and potential applications span low-Earth-orbit (LEO) communications satellite constellations and collision warning radar, an aspect of the Intelligent Vehicle Highway System or Automated Highway System. In any case, the phase shifters represent a considerable portion of the overall antenna cost, with some estimates approaching 40 percent for receive arrays. Ferrite phase shifters continue to be the workhorse in military-phased arrays, and while there have been advances in thin film ferrite devices, the review of this device technology in the previous edition of this book is still highly relevant. This chapter will focus on three types of phase shifters that have matured in the past decade: GaAs MESFET monolithic microwave integrated circuit (MMIC), micro-electromechanical systems (MEMS), and thin film ferroelectric-based devices. A brief review of some novel devices including thin film ferrite phase shifters and superconducting switches for phase shifter applications will be provided. Finally, the effects of modulo 2 phase shift limitations, phase errors, and transient response on bit error rate degradation will be considered.

Romanofsky, Robert R.↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
NASA NTRS2017

Method for Fabricating and Packaging an M.Times.N Phased-Array Antenna

A method for fabricating an M.times.N, P-bit phased-array antenna on a flexible substrate is disclosed. The method comprising ink jet printing and hardening alignment marks, antenna elements, transmission lines, switches, an RF coupler, and multilayer interconnections onto the flexible substrate. The substrate of the M.times.N, P-bit phased-array antenna may comprise an integrated control circuit of printed electronic components such as, photovoltaic cells, batteries, resistors, capacitors, etc. Other embodiments are described and claimed.

Subbaraman, Harish↗
DOE OSTI2016

Switched-capacitor isolated LED driver

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Experimental demonstration of revival of oscillations from death in coupled nonlinear oscillators

We experimentally demonstrate that a processing delay, a finite response time, in the coupling can revoke the stability of the stable steady states, thereby facilitating the revival of oscillations in the same parameter space where the coupled oscillators suffered the quenching of oscillation. This phenomenon of reviving of oscillations is demonstrated using two different prototype electronic circuits. Further, the analytical critical curves corroborate that the spread of the parameter space with stable steady state is diminished continuously by increasing the processing delay. Finally, the death state is completely wiped off above a threshold value by switching the stability of the stable steady state to retrieve sustained oscillations in the same parameter space. The underlying dynamical mechanism responsible for the decrease in the spread of the stable steady states and the eventual reviving of oscillation as a function of the processing delay is explained using analytical results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗
DOE OSTI2015

Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

A thorough investigation of the progressive reset dynamics in HfO{sub 2}-based resistive switching structures

According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Three-phase short-circuit fault implementation in converter based transmission line emulator

A hardware test-bed (HTB) has been developed to realize power system emulation by mimicking the system components with universal three-phase voltage source converters (VSCs). The VSC-based transmission line emulator has also been successfully developed to flexibly represent interconnected ac lines under normal operating conditions. As the most serious short-circuit fault condition, the three-phase short-circuit fault emulation is essential for power system studies. This paper proposes a model to realize the three-phase short-circuit fault emulation within the emulated transmission line. At the same time, a combination method is proposed to eliminate the undesired transients caused by the current reference step changes while switching between the fault state and normal state.

Zhang, Shuoting↗
DOE OSTI2020

CCM vs. CRM Design Optimization of a Boost-derived Parallel Active Power Decoupler for Microinverter Applications

Single-phase inverter or rectifier systems often make use of an auxiliary active power decoupler (APD) to balance the mismatch between steady DC power and fluctuating AC power. This paper deals with efficiency and size optimization of a parallel boost-type APD circuit for PV microinverter applications. Specifically, design of an eGaNFET-based, 400 W APD circuit, employing planar inductor and operating in either continuous conduction mode (CCM) or critical conduction mode (CRM) is considered. Available design variables including inductance value, inductor core geometry, capacitor voltage, switching frequency, and modulation scheme (CCM vs. CRM) are explored to identify Pareto-optimal configurations, which can achieve low California Energy Commission (CEC) efficiency drop while also reducing the footprint area of the inductor. The theoretical study predicts that the optimal CRM design can achieve 37% reduced inductor size, while operating with similar efficiency drop, compared to the optimal CCM design. Experimental results, obtained using two separate 40 V, 400 W hardware prototypes for CCM and CRM, are presented to verify the analyses.

14 SOLAR ENERGY↗
NASA NTRS1991

Microwave integrated circuits for space applications

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Leonard, Regis F.↗
NASA NTRS1992

Infrared Measurement

A Jet Propulsion Laboratory Technical Support Package (TSP) describing a technique for processing data from an infrared radiometer assisted a manufacturer of laminates for printed circuit boards. To reduce emissions and lower the cost of producing prepreg (a continuous glass cloth, or web, impregnated with epoxy resin and partially cured by applying heat), Norplex Oak switched to infrared treating towers. The TSP confirmed the company's computer prediction of heat flux patterns, provided information that allowed the company to modify infrared treaters for consistency, and furnished a basis for development of optimal heater placements. The treaters are now successfully operating at increased speeds with improved product consistency.

Source record↗
DOE OSTI2022

Reconfigurable quantum phononic circuits via piezo-acoustomechanical interactions

Abstract We show that piezoelectric strain actuation of acoustomechanical interactions can produce large phase velocity changes in an existing quantum phononic platform: aluminum nitride on suspended silicon. Using finite element analysis, we demonstrate a piezo-acoustomechanical phase shifter waveguide capable of producing ± π phase shifts for GHz frequency phonons in 10s of μm with 10s of volts applied. Then, using the phase shifter as a building block, we demonstrate several phononic integrated circuit elements useful for quantum information processing. In particular, we show how to construct programmable multi-mode interferometers for linear phononic processing and a dynamically reconfigurable phononic memory that can switch between an ultra-long-lifetime state and a state strongly coupled to its bus waveguide. From the master equation for the full open quantum system of the reconfigurable phononic memory, we show that it is possible to perform read and write operations with over 90% quantum state transfer fidelity for an exponentially decaying pulse.

Taylor, Jeffrey C. (ORCID:0000000215982436)↗
NASA NTRS1984

Integrating amplifiers using cooled JFETs

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

Low, F. J.↗
NASA NTRS1994

A PC based time domain reflectometer for space station cable fault isolation

Significant problems are faced by astronauts on orbit in the Space Station when trying to locate electrical faults in multi-segment avionics and communication cables. These problems necessitate the development of an automated portable device that will detect and locate cable faults using the pulse-echo technique known as Time Domain Reflectometry. A breadboard time domain reflectometer (TDR) circuit board was designed and developed at the NASA-JSC. The TDR board works in conjunction with a GRiD lap-top computer to automate the fault detection and isolation process. A software program was written to automatically display the nature and location of any possible faults. The breadboard system can isolate open circuit and short circuit faults within two feet in a typical space station cable configuration. Follow-on efforts planned for 1994 will produce a compact, portable prototype Space Station TDR capable of automated switching in multi-conductor cables for high fidelity evaluation. This device has many possible commercial applications, including commercial and military aircraft avionics, cable TV, telephone, communication, information and computer network systems. This paper describes the principle of time domain reflectometry and the methodology for on-orbit avionics utility distribution system repair, utilizing the newly developed device called the Space Station Time Domain Reflectometer (SSTDR).

Pham, Michael↗
NASA NTRS2007

Design of a Low-Energy FARAD Thruster

The design of an electrodeless thruster that relies on a pulsed, rf-assisted discharge and electromagnetic acceleration using an inductive coil is presented. The thruster design is optimized using known performance,scaling parameters, and experimentally-determined design rules, with design targets for discharge energy, plasma exhaust velocity; and thrust efficiency of 100 J/pulse, 25 km/s, and 50%, respectively. Propellant is injected using a high-speed gas valve and preionized by a pulsed-RF signal supplied by a vector inversion generator, allowing for current sheet formation at lower discharge voltages and energies relative to pulsed inductive accelerators that do not employ preionization. The acceleration coil is designed to possess an inductance of at least 700 nH while the target stray (non-coil) inductance in the circuit is 70 nH. A Bernardes and Merryman pulsed power train or a pulse compression power train provide current to the acceleration coil and solid-state components are used to switch both powertrains.

Polzin, K. A.↗
NASA NTRS1999

Satellite ATM Networks: Architectures and Guidelines Developed

An important element of satellite-supported asynchronous transfer mode (ATM) networking will involve support for the routing and rerouting of active connections. Work published under the auspices of the Telecommunications Industry Association (http://www.tiaonline.org), describes basic architectures and routing protocol issues for satellite ATM (SATATM) networks. The architectures and issues identified will serve as a basis for further development of technical specifications for these SATATM networks. Three ATM network architectures for bent pipe satellites and three ATM network architectures for satellites with onboard ATM switches were developed. The architectures differ from one another in terms of required level of mobility, supported data rates, supported terrestrial interfaces, and onboard processing and switching requirements. The documentation addresses low-, middle-, and geosynchronous-Earth-orbit satellite configurations. The satellite environment may require real-time routing to support the mobility of end devices and nodes of the ATM network itself. This requires the network to be able to reroute active circuits in real time. In addition to supporting mobility, rerouting can also be used to (1) optimize network routing, (2) respond to changing quality-of-service requirements, and (3) provide a fault tolerance mechanism. Traffic management and control functions are necessary in ATM to ensure that the quality-of-service requirements associated with each connection are not violated and also to provide flow and congestion control functions. Functions related to traffic management were identified and described. Most of these traffic management functions will be supported by on-ground ATM switches, but in a hybrid terrestrial-satellite ATM network, some of the traffic management functions may have to be supported by the onboard satellite ATM switch. Future work is planned to examine the tradeoffs of placing traffic management functions onboard a satellite as opposed to implementing those functions at the Earth station components.

vonDeak, Thomas C.↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗