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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

epitaxial thin films↗
DOE OSTI2014

Prior-based artifact correction (PBAC) in computed tomography

Purpose: Image quality in computed tomography (CT) often suffers from artifacts which may reduce the diagnostic value of the image. In many cases, these artifacts result from missing or corrupt regions in the projection data, e.g., in the case of metal, truncation, and limited angle artifacts. The authors propose a generalized correction method for different kinds of artifacts resulting from missing or corrupt data by making use of available prior knowledge to perform data completion. Methods: The proposed prior-based artifact correction (PBAC) method requires prior knowledge in form of a planning CT of the same patient or in form of a CT scan of a different patient showing the same body region. In both cases, the prior image is registered to the patient image using a deformable transformation. The registered prior is forward projected and data completion of the patient projections is performed using smooth sinogram inpainting. The obtained projection data are used to reconstruct the corrected image. Results: The authors investigate metal and truncation artifacts in patient data sets acquired with a clinical CT and limited angle artifacts in an anthropomorphic head phantom data set acquired with a gantry-based flat detector CT device. In all cases, the corrected images obtained by PBAC are nearly artifact-free. Compared to conventional correction methods, PBAC achieves better artifact suppression while preserving the patient-specific anatomy at the same time. Further, the authors show that prominent anatomical details in the prior image seem to have only minor impact on the correction result. Conclusions: The results show that PBAC has the potential to effectively correct for metal, truncation, and limited angle artifacts if adequate prior data are available. Since the proposed method makes use of a generalized algorithm, PBAC may also be applicable to other artifacts resulting from missing or corrupt data.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2024

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

Raman↗
DOE OSTI2022

Laser-driven, ion-scale magnetospheres in laboratory plasmas. II. Particle-in-cell simulations

Ion-scale magnetospheres have been observed around comets, weakly magnetized asteroids, and localized regions on the Moon and provide a unique environment to study kinetic-scale plasma physics, in particular in the collision-less regime. In this work, we present the results of particle-in-cell simulations that replicate recent experiments on the large plasma device at the University of California, Los Angeles. Using high-repetition rate lasers, ion-scale magnetospheres were created to drive a plasma flow into a dipolar magnetic field embedded in a uniform background magnetic field. The simulations are employed to evolve idealized 2D configurations of the experiments, study highly resolved, volumetric datasets, and determine the magnetospheric structure, magnetopause location, and kinetic-scale structures of the plasma current distribution. We show the formation of a magnetic cavity and a magnetic compression in the magnetospheric region, and two main current structures in the dayside of the magnetic obstacle: the diamagnetic current, supported by the driver plasma flow, and the current associated with the magnetopause, supported by both the background and driver plasmas with some time-dependence. From multiple parameter scans, we show a reflection of the magnetic compression, bounded by the length of the driver plasma, and a higher separation of the main current structures for lower dipolar magnetic moments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

Y{sub 2}O{sub 3}:Yb/Er nanotubes: Layer-by-layer assembly on carbon-nanotube templates and their upconversion luminescence properties

Graphical abstract: Well-shaped Y{sub 2}O{sub 3}:Yb/Er nanotubes have been successfully synthesized on a large scale via layer-by-layer assembly on carbon nanotubes templates followed by a subsequent heat treatment process. The as-prepared Y{sub 2}O{sub 3}:Yb/Er nanotubes show a strong red emission corresponding to the {sup 4}F{sub 9/2}–{sup 4}I{sub 15/2} transition of the Er{sup 3+} ions under excitation at 980 nm. Display Omitted Highlights: ► Well-shaped Y{sub 2}O{sub 3}:Yb/Er nanotubes have been successfully synthesized. ► CNTs were used as templates for Y{sub 2}O{sub 3}:Yb/Er nanotubes. ► LBL assembly and calcination were used for preparation of Y{sub 2}O{sub 3}:Yb/Er nanotubes. ► The as-prepared Y{sub 2}O{sub 3}:Yb/Er nanotubes show a strong red emission. -- Abstract: Well-shaped Y{sub 2}O{sub 3}:Yb/Er nanotubes have been successfully synthesized on a large scale via layer-by-layer (LBL) assembly on carbon nanotubes (CNTs) templates followed by a subsequent heat treatment process. The crystal structure, element analysis, morphology and upconversion luminescence properties were characterized. XRD results demonstrate that the diffraction peaks of the samples calcinated at 800 °C or above can be indexed to the pure cubic phase of Y{sub 2}O{sub 3}. SEM images indicate that a large quantity of uniform and rough nanotubes with diameters of about 30–60 nm can be observed. The as-prepared Y{sub 2}O{sub 3}:Yb/Er nanotubes show a strong red emission corresponding to the {sup 4}F{sub 9/2}–{sup 4}I{sub 15/2} transition of the Er{sup 3+} ions under excitation at 980 nm, which have potential applications in such fields as nanoscale devices, molecular catalysts, nanobiotechnology, photonics and optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗
DOE OSTI2016

Atomic Scale Understanding of Poly-Si/SiO2/c-Si Passivated Contacts: Passivation Degradation Due to Metallization

The key attributes for achieving high efficiency crystalline silicon solar cells include class leading developments in the ability to approach the theoretical limits of silicon solar technology (29.4% efficiency). The push for high efficiency devices is further compounded with the clear need for passivation to reduce recombination at the metal contacts. At the same time there is stringent requirement to retain the same material device quality, surface passivation, and performance characteristics following subsequent processing. The development of passivated silicon cell structures that retain active front and rear surface passivation and overall material cell quality is therefore a relevant and active area of development. To address the potential outcomes of metallization on passivated silicon stack, we report on some common microstructural features of degradation due to metallization for a series of silicon device stacks. A fundamental materials understanding of the metallization process on retaining high-efficiency passivated Si devices is therefore gained over these series of results.

14 SOLAR ENERGY↗
DOE OSTI2019

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in B i2 Se 3 /ZnO Heterostructures

The Bi 2 Se 3 /ZnO heterostructure is a new combination of high- and low-band-gap nanomaterials that can be implemented for optoelectronic devices. The influence of the Bi 2 Se 3 substrate on crystallization of ZnO nanolayers and charge separation at the Bi 2 Se 3 /ZnO interface reflects these important parameters, which affect optical and electronic properties of the heterostructure. Despite a few studies on Bi 2 Se 3 /ZnO heterostructures, the mechanisms of enhanced optical properties and correlation between optical and structural properties in such heterostructures are not studied in detail. In the present paper, we report on structure and optical properties of ZnO nanolayers with different thicknesses (10–150 nm) deposited by atomic layer deposition on planar and nonplanar Bi 2 Se 3 nanostructured coatings. Crystallization of ZnO nanolayers grown on Bi 2 Se 3 and Si substrates was analyzed by X-ray diffraction and scanning and transmission electron microscopy methods. Enhancement of ZnO photoluminescence in Bi 2 Se 3 /ZnO heterostructures in comparison to the photoluminescence of ZnO nanolayers of the same thickness deposited on p-doped Si substrates was observed. Correlation between the structure and optical properties of ZnO nanolayers in Bi 2 Se 3 /ZnO heterostructures is analyzed. Three complementary mechanisms of enhancement of optical properties of ZnO in Bi 2 Se 3 /ZnO heterostructures, based on charge separation at the Bi 2 Se 3 /ZnO interface, improvement of ZnO crystalline structure, and surface-plasmon–photon coupling, are proposed. The Bi 2 Se 3 /ZnO heterostructure is a new combination of high- and low-band-gap nanomaterials that can be implemented for optoelectronic devices. The influence of the Bi 2 Se 3 substrate on crystallization of ZnO nanolayers and charge separation at the Bi 2 Se 3 /ZnO interface reflects these important parameters, which affect optical and electronic properties of the heterostructure. Despite a few studies on Bi 2 Se 3 /ZnO heterostructures, the mechanisms of enhanced optical properties and correlation between optical and structural properties in such heterostructures are not studied in detail. In the present paper, we report on structure and optical properties of ZnO nanolayers with different thicknesses (10–150 nm) deposited by atomic layer deposition on planar and nonplanar Bi 2 Se 3 nanostructured coatings. Crystallization of ZnO nanolayers grown on Bi 2 Se 3 and Si substrates was analyzed by X-ray diffraction and scanning and transmission electron microscopy methods. Enhancement of ZnO photoluminescence in Bi 2 Se 3 /ZnO heterostructures in comparison to the photoluminescence of ZnO nanolayers of the same thickness deposited on p-doped Si substrates was observed. Correlation between the structure and optical properties of ZnO nanolayers in Bi 2 Se 3 /ZnO heterostructures is analyzed. Finally, three complementary mechanisms of enhancement of optical properties of ZnO in Bi 2 Se 3 /ZnO heterostructures, based on charge separation at the Bi 2 Se 3 /ZnO interface, improvement of ZnO crystalline structure, and surface-plasmon–photon coupling, are proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Characterization of the Hamamatsu R11780 12 in. photomultiplier tube

Future large water Cherenkov and scintillator detectors have been proposed for measurements of long baseline neutrino oscillations, proton decay, supernova and solar neutrinos. To ensure cost-effectiveness and optimize scientific reach, one of the critical requirements for such detectors are large-area, high performance photomultiplier tubes (PMTs). One candidate for such a device is the Hamamatsu R11780, a 12 in. PMT that is available in both standard and high quantum efficiency versions. Measurements of the single photoelectron response characteristics, relative efficiencies of the standard and high quantum efficiency versions, a preliminary measurement of the absolute quantum efficiency of the standard quantum efficiency version, and a two-dimensional scan of the relative efficiency across the photocathode surface are presented in this paper. All single photoelectron investigations were made using a Cherenkov light source at room temperature at a gain of 1×10 7 . These results show that the R11780 PMT is an excellent candidate for such large optical detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Imaging Reconfigurable Molecular Concentration on a Graphene Field-Effect Transistor

The spatial arrangement of adsorbates deposited onto a clean surface under vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors (FETs) exhibit reversible, electrically tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F 4 TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables the precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. Gate-tunable molecular concentration is explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Finally, the molecular surface concentration is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Strain Effects in SrHfO 3 Films Grown by Hybrid Molecular Beam Epitaxy

Perovskite oxide heterostructures host a large number of interesting phenomena such as ferroelectricity, which are often driven by octahedral distortions in the crystal that may induce polarization. SrHfO 3 (SHO) is a perovskite oxide with a pseudocubic lattice parameter of 4.08 Å that previous density functional theory (DFT) calculations suggest can be stabilized in a ferroelectric P4mm phase when stabilized with sufficient compressive strain. Additionally, it is insulating and possesses a large band gap and a high dielectric constant, making it an ideal candidate for oxide electronic devices. Here, to test the viability of epitaxial strain as a driver of ferroic phase transitions, SHO films were grown by hybrid molecular beam epitaxy (hMBE) with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO 3 and TbScO 3 substrates. Strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the space group of the strained films, with the results compared to those of DFT-optimized models of phase stability versus strain. Contrary to past reports, we find that compressively strained SrHfO 3 undergoes octahedral tilt distortions without associated ferroelectric polarization and most likely takes on the I4/mcm phase with the a 0 a 0 c – tilt pattern.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Tuning Structural and Mechanical Properties of Two-Dimensional Molecular Crystals: The Roles of Carbon Side Chains

A key requirement for the future applicability of molecular electronics devices is a resilience of their properties to mechanical deformation. At present, however, there is no fundamental understanding of the origins of mechanical properties of molecular films. Here we use quinacridone, which possesses flexible carbon side chains, as a model molecular system to address this issue. Eight molecular configurations with different molecular coverage are identified by scanning tunneling microscopy. Theoretical calculations reveal quantitatively the roles of different molecule-molecule and molecule-substrate interactions and predict the observed sequence of configurations. Remarkably, we find that a single Young's modulus applies for all configurations, the magnitude of which is controlled by side chain length, suggesting a versatile avenue for tuning not only the physical and chemical properties of molecular films but also their elastic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Emergent layer stacking arrangements in c-axis confined MoTe 2

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe 2 possesses two stacking arrangements, the ferroelectric Weyl semimetal T d phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe 2 , it is unclear if the layer stacking follows the T d , 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe 2 layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and T d domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe 2 stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe 2 flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

New oxyfluoride glass with high fluorine content and laser patterning of nonlinear optical BaAlBO{sub 3}F{sub 2} single crystal line

A new oxyfluoride glass of 50BaF{sub 2}-25Al{sub 2}O{sub 3}-25B{sub 2}O{sub 3} (mol. %) with a large fraction of fluorine, i.e., F/(F + O) = 0.4, was prepared using a conventional melt-quenching method in order to synthesize new glass-ceramics containing nonlinear optical oxyfluoride crystals. The refractive index at 632.8 nm and ultra-violet cutoff wavelength of the glass were 1.564 and {approx}200 nm, respectively. Eu{sup 3+} ions in the glass showed a high quantum yield of 88% in the photoluminescence spectrum in the visible region. BaAlBO{sub 3}F{sub 2} crystals (size: 50-100 nm) showing second harmonic generations were formed through the crystallization of the glass. Lines consisting of BaAlBO{sub 3}F{sub 2} crystals were patterned successfully on the glass surface by laser irradiations (Yb:YVO{sub 4} laser with a wavelength of 1080 nm, laser power of 1.1 W, scanning speed of 8 {mu}m/s). High resolution transmission electron microscope observations combined with a focused ion beam technique indicate that BaAlBO{sub 3}F{sub 2} crystals are highly oriented just like a single crystal. The present study proposes that the new oxyfluoride glass and glass-ceramics prepared have a high potential for optical device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of environmental ageing on HMS-polypropylene/Cloisite nanocomposites

High melt strength polypropylene Nanocomposites (NC-HMSPP) were obtained with concentrations of 0.1 and 5 wt% of Cloisite 20A. The melt intercalation, using twin screw extruder was done to homogenize the nanocomposite in presence of polypropylene graft maleic anhydride (PP-g-MA) compatibilizer agent. In this work, the manufactured dumbbell samples were settled in device for natural ageing assay. The period of exposition was January to December of 2012. The effects of environmental ageing was determined by carbonyl index (FT-IR) and the results showed that nanocomposites were more stable than HMSPP. The mechanical properties (elongation and rupture strength) were evaluated and the thermal behavior was investigated by differential scanning calorimetry (DSC) and X ray diffraction (DRX). The morphology was observed by scanning electron microscopy (SEM) in which the nanocomposites showed intense cracks on the surface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures

Group III Nitrides nanowires are well suited materials for the design of light emitting devices. The internal electric field created by spontaneaous and piezoelectric polarizations in these materials poses some difficulties, but also possible solutions, towards this goal. Here, we report on the high spatial asymmetry of the cathodoluminescence intensity across a GaN quantum well embedded in an AlN nanowire, when a 60 keV, 1 nm wide electron beam is scanned over this heterostructure. This asymmetry is remarkable between positions at different sides of the quantum well. We interpret this asymmetry as originating from the different drift directions of carriers due to the internal electric field. This interpretation is corroborated by the direct determination of the polarity with convergent beam electron diffraction. A precise knowledge of hole mobility and diffusion coefficients would allow an estimate of the electric field in the AlN segment of the nanowire.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

SU-F-J-177: A Novel Image Analysis Technique (center Pixel Method) to Quantify End-To-End Tests

Purpose: To implement a novel image analysis technique, “center pixel method”, to quantify end-to-end tests accuracy of a frameless, image guided stereotactic radiosurgery system. Methods: The localization accuracy was determined by delivering radiation to an end-to-end prototype phantom. The phantom was scanned with 0.8 mm slice thickness. The treatment isocenter was placed at the center of the phantom. In the treatment room, CBCT images of the phantom (kVp=77, mAs=1022, slice thickness 1 mm) were acquired to register to the reference CT images. 6D couch correction were applied based on the registration results. Electronic Portal Imaging Device (EPID)-based Winston Lutz (WL) tests were performed to quantify the errors of the targeting accuracy of the system at 15 combinations of gantry, collimator and couch positions. The images were analyzed using two different methods. a) The classic method. The deviation was calculated by measuring the radial distance between the center of the central BB and the full width at half maximum of the radiation field. b) The center pixel method. Since the imager projection offset from the treatment isocenter was known from the IsoCal calibration, the deviation was determined between the center of the BB and the central pixel of the imager panel. Results: Using the automatic registration method to localize the phantom and the classic method of measuring the deviation of the BB center, the mean and standard deviation of the radial distance was 0.44 ± 0.25, 0.47 ± 0.26, and 0.43 ± 0.13 mm for the jaw, MLC and cone defined field sizes respectively. When the center pixel method was used, the mean and standard deviation was 0.32 ± 0.18, 0.32 ± 0.17, and 0.32 ± 0.19 mm respectively. Conclusion: Our results demonstrated that the center pixel method accurately analyzes the WL images to evaluate the targeting accuracy of the radiosurgery system. The work was supported by a Research Scholar Grant, RSG-15-137-01-CCE from the American Cancer Society.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

A feasibility study for experimentally determining dynamic force distribution in a lap joint

Developing constitutive models of the physics in mechanical joints is currently stymied by inability to measure forces and displacements within the joint. The current state of the art estimates whole joint stiffness and energy loss per cycle from external measured force input and one or two acceleration responses. To validate constitutive models beyond this state requires a measurement of the distributed forces and displacements at the joint interface. Unfortunately, introducing measurement devices at the interface completely disrupts the desired physics. A feasibility study is presented for a non-intrusive method of solving for the interface dynamic forces from an inverse problem using full field measured responses. The responses come from the viewable surface of a beam. The noise levels associated with digital image correlation and continuous scanning laser Doppler velocimetry are evaluated from typical beam experiments. Two inverse problems are simulated. One utilizes the extended Sum of Weighted Accelerations Technique (SWAT). The second is a new approach dubbed the method of truncated orthogonal forces. These methods are much more robust if the contact patch geometry is well identified. Various approaches to identifying the contact patch are investigated, including ion marker tracking, Prussian blue and ultrasonic measurements. A typical experiment is conceived for a beam which has a lap joint at one end with a single bolt connecting it to another identical beam. In a virtual test using the beam finite element analysis, it appears that the SWAT inverse method requires evaluation of too many coefficients to adequately identify the force distribution to be viable. However, the method of truncated orthogonal forces appears viable with current digital image correlation (and probably other) imaging techniques.

47 OTHER INSTRUMENTATION↗