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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

AlGaAs-GaAs cascade solar cell

Computer modeling studies are reported for a monolithic, two junction, cascade solar cell using the AlGaAs GaAs materials combination. An optimum design was obtained through a serial optimization procedure by which conversion efficiency is maximized for operation at 300 K, AM 0, and unity solar concentration. Under these conditions the upper limit on efficiency was shown to be in excess of 29 percent, provided surface recombination velocity did not exceed 10,000 cm/sec.

Lamorte, M. F.↗
NASA NTRS1980

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗
NASA NTRS1981

Coplanar back contacts for thin silicon solar cells

The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

Storti, G.↗
NASA NTRS1980

Problems with state-of-the-art float zone silicon

An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.

Jastrzebski, L.↗
NASA NTRS1981

Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

Lagowski, J.↗
NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗
NASA NTRS1981

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

The effect of silicon film thickness on the energy conversion efficiency of a back surface field solar cell is investigated. A computer-aided design study on the dependence of efficiency peaks on the concentrations of the recombination and dopant impurities is presented. The illuminated current voltage characteristics of over 100 cell designs were obtained using the transmission line circuit model to numerically solve the Shockley Equations. Using an AM1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies less than 1% over more than three-to-one range of cell thickness from 30 to 100 microns. Optical reflecting back surface will give only a slight improvement of AM1 efficiency, about 0.7%, in this thickness range. The sensitive dependence of efficiency on patchiness across the back surface field, low high junction in thin cells is noted.

Sah, C. T.↗
NASA NTRS1981

IUE observations of circumstellar emission from the late-type variable R AQR (M6 + pec)

The IUE observations of R Aqr (M7 + pec) obtained in low dispersion are discussed with particular reference to circumstellar emission. Strong permitted, semiforbidden, and forbidden emission lines are seen, superimposed on a bright ultraviolet continuum. It is deduced that the strong emission line spectrum that involves C III, C IV, Si III, (0 II) and (0 III) probably arises from a dense compact nebula the size of which is comparable to the orbital radius of the binary system of which R Aqr is the primary star. The low excitation emission lines of Fe II, Mg II, 0 I, and Si II probably a white dwarf, comparable to or somewhat brighter than the Sun, since such a star can produce enough ionizing photons to excite the continuum and emission line spectrum and yet be sufficiently faint as to escape detection by direct observation. The UV continuum is attributed to Balmer recombination from the dense nebula and not to blackbody emission from the hot companion.

Hobbs, R. W.↗
NASA NTRS1981

Evolution of the atmosphere of Venus

The photochemistry of the stratosphere of Venus was modeled using an updated and expanded chemical scheme, and the results of recent laboratory studies. The model satisfactorily accounts for the observations of CO, O2, (1) and SO2 in the stratosphere. Oxygen, derived from CO2 photolysis, is primarily consumed by CO2 recombination and oxidation of SO2 to H2SO4. Photolysis of HCl in the upper stratosphere provides a major source of odd hydrogen radicals essential for the catalytic oxidation of CO. Oxidation of SO2 by O occurs in the lower stratosphere, with the O-O bond broken by S + O2 and SO + HO2. The sensitivity of stratospheric chemistry to ambient H2 abundance was studied and the model prefers the high value (1 10 ppm) recently inferred from the Pioneer Venus ionospheric measurements. The importance of the photochemical production of S2O, (SO)2, S2, H2S2O2 and H2S2O3 is speculated. A number of previously unsuspected similarities between the chemistry of the stratospheres of Venus and the Earth, presented and discussed.

Yung, Y. L.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1980

Kinetics of the ClO + NO2 + M reaction

The ClO + NO2 + M reaction has been studied with two techniques: Fourier transform infrared spectroscopy of the products, and flash photolysis-ultraviolet absorption to monitor the decay of ClO in excess NO2. The measured third-order rate constant is 1.5 x 10 to the -31st cm to the 6th/molecule-squared per sec at 298 K with M = N2, in good agreement with previous literature values, but the rate constant appears to decrease by up to a factor of three in the presence of increasing amounts of OClO. For the infrared studies a stoichiometric mixture of ClO and NO2 was prepared in a flow system by mixing NO with OClO; at least as much NO2 as ClONO2 was produced under a variety of experimental conditions. These two sets of results are incompatible with the assumption made in previous kinetic studies that ClONO2 is the only recombination product; other isomers such as OClONO or ClOONO are likely to be formed three to four times faster. These results imply that potential stratospheric ozone depletion due to chlorofluoromethanes may be even larger than previously thought.

Molina, M. J.↗
NASA NTRS1981

The properties of polycrystalline silicon solar cells with controlled titanium additions

By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

Rohatgi, A.↗
NASA NTRS1980

Interactions of efficiency and material requirements for terrestrial silicon solar cells

The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

Bowler, D. L.↗
NASA NTRS1981

Excited ozone is a possible source of atmospheric N2O

Consideration is given to the possibility that internally excited ozone formed in the three-body recombination reaction between oxygen atoms and molecules may be a potential source of atmospheric N2O through a gas-phase reaction with nitrogen molecules. Determinations of the wavelength dependence of the quantum yield for N2O formation from the photolysis of dilute solutions of O3 in liquid N2 and of the O(1D) quantum yield in the gas-phase photolysis of O3 are interpreted as suggesting the possibility of the excited ozone reaction, and a new expression for N2O quantum yield is derived. An expression for the production rate of N2O through the proposed reaction is then obtained and used to calculate atmospheric concentrations and fluxes of N2O. The theoretical profile obtained is found to agree better with experimental data than that obtained without the excited ozone reaction taken into account and to demonstrate a wide variability in N2O mixing ratios. In addition, the existence of the new N2O source is noted to imply a significantly smaller flux of N2O from surface microbiological activities, and provide a possible physical basis for latitudinal and temporal N2O variations and an additional stability for the ozone layer.

Prasad, S. S.↗
NASA NTRS1981

Analyses of atomic oxygen, the green line, and Herzberg bands in the lower thermosphere

Measured altitude profiles of atomic oxygen, 557.7-nm emissions, and Herzberg I emission between 80 and 120 km were used to test the proposed mechanisms leading to these emissions. As generally assumed, the O2(A 3 Sigma u +) that emits the Herzberg I bands is excited by three-body recombination of atomic oxygen. The quenching of this state is by N2 or O2; for N2 the lifetime times the rate is 2.75 x 10 to the -13th per cu cm; other quenchers are insignificant. It is found that the atomic oxygen O(1S) emitting the green line is excited by the Barth mechanism.

Thomas, R. J.↗
NASA NTRS1981

IUE and visual spectrophotometry of Markarian 9, Markarian 10, and 3C 390.3

Ultraviolet spectra from IUE are combined with visual spectra for the three type I Seyfert galaxies Mrk 9, Mrk 10, and 3C 390.3. The 2175 A interstellar feature is measured well enough in Mrk 9 to indicate that the extinction corresponding to E(B-V) = 0.14 + or - 0.04 is in the galaxy. Mrk 10 displays evidence for 2175 A absorption and also yields E(B-V) = 0.14 + or - 0.07, while the continuum for 3C 390.3 is too weak to positively detect the feature. It is found, after correcting for reddening, that the line-intensity ratio L(alpha)/H(beta) ranges from 8 to 18, while that for H(alpha)/H(beta) goes from 2.1 to 5.4. It is noted that the He II 1640/4686 line ratio is uncertain but appears to be consistent with the recombination value of about 8. If photoionization is assumed, a comparison of the strengths of L(alpha) and H(beta) with the UV ionizing flux suggests that H(beta) is enhanced rather than L(alpha) depressed. When a comparison is made with similar ratios in quasars, L(alpha) is found to be much stronger and H(beta) slightly stronger in Seyferts than in quasars.

Oke, J. B.↗
NASA NTRS1980

Transport of ionospheric O/+/ ions across the Venus terminator and implications

Data from the Pioneer Venus orbiter retarding potential analyzer demonstrate that the velocity of ionospheric O(+) ions in the vicinity of the terminator is directed antisunward and radially inward toward the planet in the range of 1-8 km/s. The velocity tends to increase with altitude, and may increase to still larger values just below the ionopause. The Alfven Mach number of the flow is generally greater than 1, indicating that the flow is controlled more by inertial forces than by magnetic forces. The ion Mach number is also greater than one. The flux of O(+) ions across the terminator planetwise is estimated to be equal to the integrated recombination rate of O2(+) on the night side within a factor of 2. Ion transport contributes substantially, and possibly predominantly, to the maintenance of the night side ionosphere.

Knudsen, W. C.↗
NASA NTRS1980

Silicon solar cells with high open-circuit voltage

Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

Minnucci, J. A.↗