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At least 1,171 records · Page 65

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DOE OSTI2025

NLR HPC Eagle GPU Node Metrics

Ganglia node metrics and iLO (Integrated Lights Out) power data captured from six representative Eagle GPU nodes The Eagle HPC operated at NLR from 2019 through 2024. Eagle was a 2,000-node, 8-petaflop system. This dataset is a representative sample of metrics for 6 of the GPU nodes. Each GPU node contained 2 CPUs and 2 GPUs. Data provided in compressed CSV format. Ganglia and iLO Power Time Series Fields ts: Timestamp dv: Device / Node - Rack and Unit - r103u17 == r(ack)103u(nit)17 mt: Metric (only present for Ganglia) vl: Value - Value in watts for iLO power (instantaneous value at sampling time) or specified Ganglia metric below Ganglia Metrics Metric name -- Metric description -- Unit cpu_aidle -- Percent of time since boot idle CPU -- Percent cpu_idle -- Percent CPU idle -- Percent cpu_nice -- Percent CPU nice -- Percent cpu_speed -- Speed in MHz of CPU -- MHz cpu_user -- Percent CPU user -- Percent cpu_wio -- The percentage of CPU Wait I/O -- Percent gpu0_bar1_memory -- Used GPU bar1 memory -- MB gpu0_decoder_util -- GPU decoder utilization -- Percent gpu0_ecc_db_error -- Total ECC error counts for the GPU -- Number gpu0_encoder_util -- GPU encoder utilization -- Percent gpu0_fan -- Fan speed -- RPM gpu0_fb_memory -- Used GPU framebuffer memory -- MB gpu0_graphics_clock_report -- Current clock speeds for the device -- MHz gpu0_mem_total -- Memory total -- MB gpu0_mem_util -- Memory utilization -- Percent gpu0_power_usage_report -- Power usage report -- Watts gpu0_temp -- GPU 1 temperature -- Celsius gpu1_bar1_memory -- Used GPU bar1 memory -- MB gpu1_decoder_util -- GPU decoder utilization -- Percent gpu1_ecc_db_error -- Total ECC error counts for the GPU -- Number gpu1_encoder_util -- GPU encoder utilization -- Percent gpu1_fan -- Fan speed -- RPM gpu1_fb_memory -- Used GPU framebuffer memory -- MB gpu1_graphics_clock_report -- Current clock speeds for the GPU -- MHz gpu1_mem_total -- Memory total -- MB gpu1_mem_util -- Memory utilization -- MB gpu1_power_usage_report -- Power usage report -- Watts gpu1_temp -- GPU 1 temperature -- Celsius ipmi_cpu1_temp -- CPU 1 temperature -- Celsius ipmi_cpu2_temp -- CPU 2 temperature -- Celsius ipmi_inlet_ambient_temp -- Temperature measured at intake -- Celsius ipmi_vr_p1_temp -- CPU 1 voltage regulator temperature -- Celsius ipmi_vr_p2_temp -- CPU 2 voltage regulator temperature -- Celsius mem_buffers -- Amount of buffered memory -- Bytes mem_cached -- Amount of cached memory -- Bytes mem_free -- Amount of available memory -- Bytes mem_shared -- Amount of shared memory -- Bytes mem_total -- Amount of available memory -- Bytes

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2017

Hysteretic Superconducting Heat-Flux Quantum Modulator

In this work, we discuss heat transport in a thermally biased superconducting quantum-interference device (SQUID) in the presence of an external magnetic flux, when a non-negligible inductance of the SQUID ring is taken into account. A properly sweeping driving flux causes the thermal current to modulate and behave hysteretically. The response of this device is analyzed as a function of both the hysteresis parameter and the degree of asymmetry of the SQUID, highlighting the parameter range over which hysteretic behavior is observable. Markedly, the temperature of the SQUID also shows hysteretic evolution, with sharp transitions characterized by temperature jumps up to, e.g., approximately 0.02 K for a realistic Al-based setup. In view of these results, the proposed device can effectively find an application as a temperature-based superconducting memory element, working even at gigahertz frequencies by suitably choosing the superconductor on which the device is based.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2026

Maximizing dynamic range and performance of anatase TiO 2 ECRAM through structure and programming

Here, in this study, we investigate the structure-dependent modulation characteristics of all-solid-state three-terminal electrochemical random-access memory (ECRAM) based on an anatase Li x TiO 2 channel. By directly comparing “asymmetric” and “symmetric” ECRAM device architectures, we reveal significant insight into the impact of a non-zero gate-drain open-circuit voltage and its influence on voltage vs. current-controlled gating. We also explore the impact of potentiation/depression write parameters on the symmetry, linearity, and dynamic range of the device response. Together, initial results from optimizing structure and programming approaches yielded unprecedented G max /G min ratios of >1,000 for ECRAM and hundreds of tunable memory states with excellent linearity and symmetry. Simulations based on these ECRAM devices further illustrate the promise of this analog memory technology, achieving near 2% classification error in the MNIST digit recognition benchmark for a range of training parameters compared to a theoretical best of 1.66% and outperforming other device models extracted from the literature.

AIHWKit↗

DOE OSTI2014

Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

36 MATERIALS SCIENCE↗

DOE OSTI2012

High Temperature, High Pressure Devices for Zonal Isolation in Geothermal Wells

The U.S. Department of Energy is leading the development of alternative energy sources that will ensure the long-term energy independence of our nation. One key renewable resource being advanced is geothermal energy which offers an environmentally benign, reliable source of energy for the nation. To utilize this resource, water will be introduced into wells 3 to 10 km deep to create a geothermal reservoir. This approach is known as an Enhanced Geothermal System (EGS). The high temperatures and pressures at these depths have become a limiting factor in the development of this energy source. For example, reliable zonal isolation for high-temperature applications at high differential pressures is needed to conduct mini-fracs and other stress state diagnostics. Zonal isolation is essential for many EGS reservoir development activities. To date, the capability has not been sufficiently demonstrated to isolate sections of the wellbore to: 1) enable stimulation; and 2) seal off unwanted flow regions in unknown EGS completion schemes and high-temperature (>200°C) environments. In addition, packers and other zonal isolation tools are required to eliminate fluid loss, to help identify and mitigate short circuiting of flow from injectors to producers, and to target individual fractures or fracture networks for testing and validating reservoir models. General-purpose open-hole packers do not exist for geothermal environments, with the primary barrier being the poor stability of elastomeric seals at high temperature above 175°C. Experimental packer systems have been developed for geothermal environments but they currently only operate at low pressure, they are not retrievable, and they are not commercially available. The development of the high-temperature, high-pressure (HTHP) zonal isolation device would provide the geothermal community with the capability to conduct mini-fracs, eliminate fluid loss, to help identify and mitigate short circuiting of flow from injectors to producers, and to target individual fractures or fracture networks for testing and validating reservoir models. The goal of this program, therefore, was to develop and demonstrate reliable high-temperature high-pressure zonal isolation devices that are compatible with the high-temperature downhole environment anticipated for Enhanced Geothermal Systems. Over the course of this 3 year program, CTD designed and demonstrated a high temperature high pressure zonal isolation device. CTD has utilized its expertise in high-temperature materials, shape memory composites and foams, and deployment mechanisms for spacecraft and oil tools to develop a new class of HTHP zonal isolation devices for use in EGS. Specifically, the objective was to demonstrate the ability to isolate sections of an EGS wellbore to: 1) enable stimulation; and 2) seal off unwanted flow regions in unknown EGS completion schemes and high-temperature (>200°C) environments at temperatures upwards of 300°C. A concept for a high-temperature, high-pressure zonal isolation device was designed for use in creating circulation paths in environments where temperatures are in excess of 300°C and differential pressures of up to 10,000 psi are required to stimulate solid granite. This new zonal isolation device distributes the high-pressure differential through a significant length of high temperature, shape memory polymer composite material. The development of differential pressure is initiated by a thermally triggered actuation of a ‘structural seal’ that fills the cross section of the bore with the shape memory material. After this preliminary seal is made, differential pressure begins to build through the material as the seal forces the flow to pass through pores in the shape memory material. The shape memory material is compressed into place to react the force of the internal

58 GEOSCIENCES↗

DOE OSTI2018

Electrical control of 2D magnetism in bilayer CrI 3

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Optimizing Data Movement for GPU-Based In-Situ Workflow Using GPUDirect RDMA

The extreme-scale computing landscape is increasingly dominated by GPU-accelerated systems. At the same time, in-situ workflows that employ memory-to-memory inter-application data exchanges have emerged as an effective approach for leveraging these extreme-scale systems. In the case of GPUs, GPUDirect RDMA enables third-party devices, such as network interface cards, to access GPU memory directly and has been adopted for intra-application communications across GPUs. In this paper, we present an interoperable framework for GPU-based in-situ workflows that optimizes data movement using GPUDirect RDMA. Specifically, we analyze the characteristics of the possible data movement pathways between GPUs from an in-situ workflow perspective, and design a strategy that maximizes throughput. Furthermore, we implement this approach as an extension of the DataSpaces data staging service, and experimentally evaluate its performance and scalability on a current leadership GPU cluster. The performance results show that the proposed design reduces data-movement time by up to 53% and 40% for the sender and receiver, respectively, and maintains excellent scalability for up to 256 GPUs.

Zhang, Bo↗

DOE OSTI2016

Suppression of boron diffusion using carbon co-implantation in DRAM

Highlights: • The impact of Ge + C co-implantation on dopant diffusion was investigated. • DIBL and V{sub TH} variation was improved by Ge + C co-implantation. • The V{sub TH} mismatch and the write characteristics were improved in the DRAM device. - Abstract: In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V{sub TH}) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the V{sub TH} mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Impact of Oxygen Non-Stoichiometry on Near-Ambient Temperature Ionic Mobility in Polaronic Mixed-Ionic-Electronic Conducting Thin Films

Enhanced ionic mobility in mixed ionic and electronic conducting solids contributes to improved performance of memristive memory, energy storage and conversion, and catalytic devices. Ionic mobility can be significantly depressed at reduced temperatures, for example, due to defect association and therefore needs to be monitored. Measurements of ionic transport in mixed conductors, however, proves to be difficult due to dominant electronic conductivity. This study examines the impact of different levels of quenched-in oxygen deficiency on the oxygen vacancy mobility near room temperature as measured by a novel dynamic current-voltage analysis. A Pr 0.1 Ce 0.9 O 2-δ film was grown by pulsed laser deposition and subsequently annealed, from 400-600° C, in various oxygen partial pressures to modify its oxygen vacancy concentration while minimizing microstructural growth and cation segregation. To monitor changes in film non-stoichiometry, we leverage the existence of an optical absorption center, related to the oxidation state of Pr ions in Pr0.1Ce0.9O2-δ. The oxygen vacancy migration enthalpy was found to exhibit a small increase from 0.73± 0.04 to 0.79 ± 0.02 eV with increasing oxygen deficiency, while the pre-factor was found to increase by a factor of 135. Here, a nearly 13-fold increase in ionic mobility at 60 °C for increases in oxygen non-stoichiometry from 0.032 ± 0.001 to 0.042± 0.001 was thereby detected. Raman spectroscopy was employed to rule out changes in strain as the primary cause for the significant change in mobility. Several factors potentially contributing to the large pre-factor changes are examined and discussed. Insights into how ionic defect concentration can markedly impact ionic mobility should help in elucidating the origins of variations seen in nanoionic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Exploring phase transitions and magnetoelectric coupling of epitaxial asymmetric multilayer heterostructures

Magnetoelectric (ME) heterostructures can exhibit higher magnetic and ferroelectric ordering temperatures along with large ME coupling compared to single-phase multiferroic materials. We synthesized Pb(Fe 0.5 Nb 0.5 )O 3 (PFN)/Ni 0.65 Zn 0.35 Fe 2 O 4 (NZFO)/Pb(Fe 0.5 Nb 0.5 )O 3 (PFN)/Ni 0.65 Zn 0.35 Fe 2 O 4 (NZFO)/Pb(Fe 0.5 Nb 0.5 )O 3 (PFN) multilayer heterostructures having dimensions of 40/10/40/10/40 nm. High quality epitaxial growth of these heterostructures was confirmed via X-ray diffraction (XRD) and selected area electron diffraction (SAED) patterns. These nanostructures show well saturated polarization (~52 μC cm -2 ) and magnetization (~62 emu cm -3 ) at room temperature (RT). The magnetic and ferroelectric transitions occur well above RT. These heterostructures exhibit relaxor behavior and undergo 2nd order ferroelectric phase transition. Magnetodielectric measurements show significant coupling between the magnetic and electrical order parameters at RT. These characteristics of the heterostructures make them suitable as potential candidates for ultra-low power memory, spintronics, and different multifunctional (micro)nanoscale device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Charge state hysteresis in semiconductor quantum dots

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

Quantum reading of unitary optical devices

We address the problem of quantum reading of optical memories, namely the retrieving of classical information stored in the optical properties of a media with minimum energy. We present optimal strategies for ambiguous and unambiguous quantum reading of unitary optical memories, namely when one's task is to minimize the probability of errors in the retrieved information and when perfect retrieving of information is achieved probabilistically, respectively. A comparison of the optimal strategy with coherent probes and homodyne detection shows that the former saves orders of magnitude of energy when achieving the same performances. Experimental proposals for quantum reading which are feasible with present quantum optical technology are reported.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

The role of atomic vacancies on phonon confinement in α-GeTe

Atomic defects and their dynamics play a vital role in controlling the behavior of non-volatile phase change memory materials used in advanced optical storage devices. Synthesis and structural analysis by XRD and Raman spectroscopy on α-GeTe single crystal with different sizes are reported. The spectroscopic measurements on micron and nano sized α-GeTe single crystal reveal the evolution of phonon confinement with crystal sizes of few hundred nanometers. The characteristic vibrational modes of bulk α-GeTe structure are found to downshift and asymmetrically broaden to lower frequency with decreasing the single crystal size. We attribute the observed downshift of Raman lines in α-GeTe is largely due to the presence of high concentration of atomic vacancies. The crystal size and temperature dependent Raman spectra provide explicitly the dynamics of vacancies on optical phonon confinement in α-GeTe structure. Thus, the observed large concentration of vacancies and their size dependency might influence the phase change phenomenon in GeTe based alloys.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Spin-torque switching of a nano-magnet using giant spin hall effect

The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

36 MATERIALS SCIENCE↗

DOE OSTI2016

On the origin of resistive switching volatility in Ni/TiO{sub 2}/Ni stacks

Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO{sub 2} is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin film sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Combined effects of vertical and lateral confinement on the magnetic properties of MnAs micro and nano-ribbons

The micromagnetic domain structure of MnAs films gave place to an intense research activity in the last few years due to its potential application in magneto-electronic devices such as domain-wall track memories and logic circuits. These applications require a full knowledge of miniaturization effects on the magnetic properties of the material. In this work, X-ray photoemission electron microscopy has been used for imaging magnetic domains in lithographically fabricated MnAs ribbons, addressing the dependence of the domain configuration on film thickness and ribbon width. Our experiments show a transition from head-on to regular stripe domains below a critical width/thickness ratio w{sub c} ≈ 6. Micromagnetic simulations suggest that this transition is correlated to the magnetic structure of the surface plane. Depending on the ribbon width and thickness, the magnetic configuration is shown to evolve from flux-closure domain structure to a state of almost homogeneous magnetization, observed for narrower ribbons. The evolution of the domain structure, magnetic fraction, and magnetization with temperature has been studied across the ferromagnetic/paramagnetic transition. Our experiments show that the magnetic configuration in ribbons exhibits higher stability to temperature variations than in as-cast films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗