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At least 1,171 records · Page 65

Annealing kinetics of electron-irradiated GaAs heteroface solar cells in the range 175-200 C

Annealing of electron-irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 10 to the 15th 1-MeV electrons/sq cm followed by thermal annealing. An activation energy for annealing of 1.25 + or - 0.14 eV and a frequency factor of (3.7 + or - 1.9) x 10 to the 9th per sec were determined. A small component of the irradiation damage which does not anneal measurably at 200 C was observed.

Walker, G. H.↗

Laboratory simulation of irradiation-induced dielectric breakdown in spacecraft charging

The discharging of dielectric samples irradiated by a beam of monoenergetic electrons is investigated. The development of a model, or models, which describe the discharge phenomena occuring on the irradiated dielectric targets is discussed. The electrical discharge characteristics of irradiated dielectric samples are discussed and the electrical discharge paths along dielectric surfaces and within the dielectric material are determined. The origin and destination of the surface emitted particles is examined and the charge and energy balance in the system is evaluated.

Yadlowsky, E. J.↗

Viking gas exchange reaction - Simulation on UV-irradiated manganese dioxide substrate

The exchange of O2 for H2O, analogous to that recorded on Mars by the Viking GEX experiment, has been observed on humidifying powdered beta-MnO2 (pyrolusite) which had been irradiated by UV in a humidified analog of the Martian atmosphere. Pyrolusite irradiated in a dry atmosphere did not release O2 on humidification. The XPS spectra of Mn and O of the reactive pyrolusite were shifted toward higher binding energies during UV irradiation. These shifts are consistent with the creation of a surface layer of a Mn(V) or Mn(VI) compound. The destruction of such a layer on humidification could account for the observed O2 release. Although manganese has not been identified in the Martian regolith, the upper limit of the Mn concentration is sufficiently high that O2 release from pyrolusite could have been responsible for the results of the Viking GEX experiment.

Blackburn, T. R.↗

Dependence of the spectral surface irradiance on aerosol properties and surface reflectivity

A reduction in global surface irradiance occurs with increasing aerosol loadings when the aerosols are absorbing. For scattering aerosols, a reduction is pronounced for isotropic scattering (characteristic of small particles) but reduction is not as significant for scattering with a high anisotropy of a large forward peak (characteristic of large particles). This distinction between isotropic and anisotropic scattering becomes small or null over highly reflecting terrain; and for reflectivities higher than 0.5 and solar elevation angles close to the zenith, the global irradiance can be slightly higher for isotropic scattering than in the case of an anisotropy of a forward peak. Under such conditions, which can be encountered in reflective infrared bands over dense vegetation or over sandy deserts (close to noon, in low latitudes) the surface irradiance becomes nearly independent of the aerosol optical thickness.

Otterman, J.↗

The solar spectral irradiance 1200-2550 A at solar maximum

Full-disk solar spectral irradiances at solar maximum were obtained in the spectral range 1200-2550 A at a spectral resolution of approximately 1 A from rocket observations above White Sands, New Mexico, on June 5, 1979. Comparison with measurements made near solar minimum indicates approximately a factor of 2.5 increase in the irradiance at 1200 A, a 20% increase near 1800 A, and no increase within our measurement errors (+ or - 15%) above 2100 A. Irradiances in the range 1800-2100 A are in excellent agreement with previous measurements, but those in the 2100- to 2550-A range are significantly lower. The intensities of strong emission lines at wavelengths below 1850 A are also reported.

Mount, G. H.↗

Late degeneration in rabbit tissues after irradiation by heavy ions

Results are presented for investigations of the late effects of heavy-ion irradiation on rabbit tissues which were undertaken to assess the hazards associated with the long-term exposure of humans to heavy ions in space during such activities as the construction of solar power stations or voyages to Mars. White rabbits approximately six weeks old were exposed to various doses of collimated beams of 400-MeV/n Ne ions, 570 MeV/n Ar ions and Co-60 gamma rays directed through both eyes, and the responses of the various tissues (hair follicles, skin, cornea, lens, retina, Harderian glands, bone and forebrain) were examined. Proliferating tissues are found to exhibit high damage levels in the early and late periods following irradiation, while terminally differentiating tissues repond to radiation most intensely in the late period, years after irradiation, with no intermediate recovery. The results obtained from rabbits are used to predict the occurrence of late tissue degeneration in the central nervous system, terminally differentiating systems and stem cells of humans one or more decades following exposure to radiation levels anticipated during long-duration space flights. The studies also indicate that tissues may be prematurely aged in the sense that tissue life spans may be shortened without the development of malignancies.

Lett, J. T.↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

Radiometer for accurate (+ or - 1%) measurement of solar irradiance equal to 10,000 solar constants

The 10,000 solar constant radiometer was developed for the accurate (+ or - 1%) measurement of the irradiance produced in the image formed by a parabolic reflector or by a multiple mirror solar installation. This radiometer is water cooled, weighs about 1 kg, and is 5 cm (2 in.) in diameter by 10 cm (4 in.) long. A sting is provided for mounting the radiometer in the solar installation capable of measuring irradiances as high as 20,000 solar constants, the instrument is self calibrating. Its accuracy depends on the accurate determination of the cavity aperture, and absorptivity of the cavity, and accurate electrical measurements. The spectral response is flat over the entire spectrum from far UV to far IR. The radiometer responds to a measurement within 99.7% of the final value within 8 s. During a measurement of the 10,000 solar constant irradiance, the temperature rise of the water is about 20 C. The radiometer has perfect cosine response up to 60 deg off the radiometer axis.

Kendall, J. M., Sr.↗

The solar spectral irradiance 1200-3184 a near solar maximum, 15 July 1980

Full disk solar spectral irradiances near solar maximum were obtained in the spectral range 1200 to 3184 A at a spectral resolution of approximately 1 A from rocket observations above White Sands Missile Range. Comparison with measurements made during solar minimum confirm a large increase at solar maximum in the solar irradiance near 1200 A with no change within the measurement errors near 2000 A. Irradiances in the range 1900 to 2100 A are in excellent agreement with previous measurements, and those in the 2100 to 2500 A range are lower than separate previous results in this range. Agreement is found with previous values 2500 to 2900 A A, and then fall below those values 2900 to 3184 A.

Mount, G. H.↗

I-Xe dating - Intercomparisons of neutron irradiations and reproducibility of the Bjurbole standard

Previously unpublished data from the stepwise heating analysis of the Valecitos 1 (V1) Bjurbole standard are presented together with the results of an isotopic dilution measurement of a KI monitor included in the V1 irradiation package. The results of these analyses are compared with the values observed in other irradiations. Apparent I-Xe 'formation' ages are reproducible for three different samples of Bjurbole, suggesting isotopic homogeneity for initial iodine in the bulk material. The systematics of neutron capture in Xe-135 (produced from U-235 neutron fission) are examined and verified in irradiated BCR-1.

Hohenberg, C. M.↗

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗

Stratospheric observations of the attenuated solar irradiance in the Schumann-Runge band absorption region of molecular oxygen

A spectrometer flown on the first Solar Absorption Balloon Experiment (SABE-1) observed the attenuated solar irradiance between 184 and 202 nm from an altitude near 40 km. These measurements provide a check on the absorption cross sections of molecular oxygen in the spectral region of the Schumann-Runge bands. Comparison of the measurements with calculations based on cross sections derived from laboratory data shows a general agreement although the irradiance measurements have large error bars near the centers of the absorption bands. The results imply that the 184-200 nm solar irradiance that penetrates to the stratosphere can be computed to an accuracy of + or - 30% or better by using presently available cross sections.

Frederick, J. E.↗

Solar total irradiance observations by active cavity radiometers

Investigations have been conducted concerning the development of new cavity pyrheliometer for an absolute measurement of solar irradiance both in preflight testing of spacecraft and in flight experiments to measure the total solar flux. A series of instruments developed as part of this program are electrically self-calibrated cavity pyrheliometers whose mode of operation is characterized by the name Active Cavity Radiometer (ACR). The temperatures of their cavity sensors are servocontrolled, actively maintained at constant temperatures relative to their heat sinks by electrical heating. The solar irradiance is related to the International System of Units by measuring the difference in amount of electrical heating required with the cavity sensor alternately shaded and exposed to the sun. Studies conducted with the ACR are discussed. While variations of a few tenths of a percent in solar total irradiance lasting no more than a week or two have been detected, no long term trends were identified.

Willson, R. C.↗

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Li, S. S.↗

Penetration of solar irradiance in the Schumann-Runge bands of O2 - A comparison of balloon-borne measurements and calculations

Measurements of the attenuated solar irradiance made from the STRATCOM VIII balloon are compared with calculated values of the solar irradiance reaching the 40 km level for a solar zenith angle of 66.18 deg. The ability of theory to match intensity maxima which correspond to the cross section minima between the bands is investigated. The comparisons show that model results are too small by a factor of 1.8 between 199 and 22 nm, which is attributed to a systematic calibration offset between the balloon data and the irradiances of Bruckner et al. (1976). A large disagreement between the observed and calculated intensities at peaks H and I results from an error in the cross sections used in current aeronomic work.

Frederick, J. E.↗

Damage and coefficients and thermal annealing of irradiated silicon and GaAs solar cells

Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.

Anspaugh, B. E.↗

Solar irradiance modulation by active regions during 1980

The solar irradiance modulation due to active regions during 1980 has been investigated in detail. Specifically, the uncertainties caused by ground-based data used as input in the modeling effort, and by currently incomplete knowledge of the proper parameters that describe the angular variation of sunspot and facular contrasts are estimated. It is concluded that the most significant uncertainties are due to errors in area measurements and, possibly, varying spot and facular brightness. A 'standard model' for later use is derived to a best-fit technique of the currently available ACRIM irradiance data and the predictions of models with appropriately varied parameters. Finally, the expected irradiance for the entire year of 1980 is computed.

Sofia, S.↗

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗