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At least 1,171 records · Page 65

Phosphorous transient enhanced diffusion suppression and activation enhancement with cluster carbon co-implantation

Carbon co-implantation is well known as an effective method for suppressing boron/phosphorous transient enhanced diffusion (TED). Germanium pre-amorphization implantation (PAI) is usually applied prior to carbon co-implantation for suppressing channeling tail of dopants. In this study, cluster carbon was applied instead of the combination of germanium PAI and monomer carbon co-implantation prior to phosphorous implantation. Dependence of phosphorous activation and TED on amorphous layer thickness, carbon dose, carbon distribution and substrate temperature have been investigated. Cluster carbon implantation enables thick amorphous layer formation and TED suppression at the same time and low temperature implantation enhances the ability of amorphous layer formation so that shallow junction and low Rs can be achieved without Ge implantation.

36 MATERIALS SCIENCE↗

Development of an accelerator-based diagnostic for plasma-facing surfaces in magnetic confinement devices

The focus of this work was the development of the Accelerator-based In-situ Material Surveillance (AIMS) diagnostic. The understanding of plasma-material interaction processes in fusion devices has been greatly hampered by the lack of ability to measure the surface ~micron layers of solid surfaces that are in contact with and greatly modified by the boundary fusion plasma. AIMS was the first diagnostic developed and deployed that allowed non-destructive surface measurements with adequate spatial and time resolution. The deployment was primarily carried out on the Alcator C-Mod tokamak. AIMS diagnostic goal is to remotely generate isotopic concentration maps on a plasma shot-to-shot timescale that cover a large fraction of the plasma-facing surface inside of a magnetic fusion device without the need for vacuum breaks or physical access to the material surfaces. The diagnostic used a compact (~ 1 m), high-current (~ 1 milliamp) radio-frequency quadrupole accelerator to inject 0.9 MeV deuterons into the Alcator C-Mod tokamak. The tokamak magnetic fields were controlled – in between plasma shots – to steer the deuterons to material surfaces where the deuterons cause high-Q nuclear reactions with low-Z isotopes up to 5 microns into the material. The induced neutrons and gamma rays are measured with scintillation detectors; energy spectra analysis provides quantitative reconstruction of surface compositions. Experimental validation showed that low-Z isotopes such as deuterium and boron can be quantified on the material surfaces, and that magnetic steering provides access to different measurement locations. AIMS measurements of D retention on inner wall PFCs were acquired during diverted and limited plasma operations and during wall conditioning experiments om Alcator C-Mod. Intershot measurements demonstrate the local erosion and co-deposition of boron films on PFC surfaces with a constant D-B ratio. This is consistent with previous results suggesting that D co-=deposition with boron is insufficient to account for the net retention observed in Alcator C-Mod. Changes in deuterium concentration during boronization, electron cyclotron and glow cleanings were also measured. These initial results were limited to studying low-Z surface properties, because the Coulomb barrier precludes nuclear reactions between high-Z elements and the ~1 MeV AIMS deuteron beam. In order to measure the high-Z erosion of interest in Alcator C-Mod and future fusion devices, a new technique using deuteron-induced gamma emission and a low-Z depth marker was developed using implanted depth markers as a method of measuring bulk erosion and redeposition. This method is dubbed DEA: Depth marker Erosion with AIMS. DEA simulations and experiments were used to validate this technique, both in the laboratory and via experiments in the EAST tokamak. Based on these results, the DEA technique, using ion beam implanted depth markers as a reference to the surface in order to monitor surfaces for erosion and redeposition, is a viable option as a diagnostic, both in and ex situ. These markers show stability to temperature, the tokamak environment, and multiple probing beams. The ex-situ (eDEA) method, which uses resonances in the cross sections of gamma producing reactions to track the surface, was used to successfully measure erosion in samples that were exposed in the EAST tokamak. The in-situ (iDEA) method, which uses the gamma yield ratio to monitor changes to the surface, was used to differentiate between markers implanted to different depths. Both techniques were successfully simulated, and both presented unique challenges experimentally and in data analysis. In particular, the eDEA probing beam was found to have energy variations leading to initial experimental uncertainty, and the iDEA gamma spectra had conflicting gamma peaks which make data analysis difficult. However, the end result is a promising framework for a diagnostic technique that supplements the abilities of AIMS and expands the possibilities of surface diagnostics in fusion devices. While the results of this work are overwhelmingly encouraging for further development of AIMS in general, and the DEA technique specifically, several areas require significant development before this diagnostic is as robust and widely applicable as a surface diagnostic ought to be. Recommended future work includes the development of a cross section/yield measurement database, erosion tests with secondary verification of results using a fiducial mark from a focused ion beam, and acquiring a new accelerator with a more reliable high energy proton and deuterium beam The project resulted in 14 publications, including the PhD theses of three MIT graduate students, cited in the included bibliography.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Scanning transmission electron microscopy (STEM) study on surface modified CVD diamond/Si(111) film post implanted Fe-B and NiFe-B related to GMR properties

Nanostructure investigation on the post implantation by Fe-B and NiFe-B on CVD diamond/Si(111) film have been studied by means of STEM related to their GMR phenomena. Two samples were investigated carefully, firstly sample is post NiFe-B at E=70keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as A-E3D1). Secondly, is post FeB at E=20 keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as B-E1D1). Based on FPP measurement at room temperature (RT) and H{sub applied} = 8 kOe, A-E3D1 sample has MR ratio almost 80% and MR ratio in B-E1D1 sample is 45%. Based on STEM-EDX investigation, there are two aspects of how MR ratio of A-E3D1 more higher than those of B-E1D1. Firstly, surface nanostructure on the top of A-E3D1 film is more grazing than on the top of B-E1D1. Analysis with Scanning Transmission Electron Microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS) the growth of amorphous carbon layer on top of the implanted diamond film with thickness around 100 nm and only 20 nm on the no implanted sample have observed. Boron atoms were found inside the carbon amorphous layer distributed homogenously. Secondly, oxygen content at the interface between diamond film and silicon substrate in sample A-E3D1 was lower than those in B-E1D1 sample. This condition gives the resistance value in A-E3D1 lower than value in B-E1D1. This result is close to the Raman Spectroscopy data measurement which obviously suggests changes on the Raman spectrum due to implantation related to Oxygen excitation from B-E1D1 sample.

36 MATERIALS SCIENCE↗

Ion probe determinations of the rare earth concentrations of individual meteoritic phosphate grains

A new ion probe method for quantitative measurements of the concentrations of all the REE down to the ppm level in 5-20 micron spots is presented. The first application of the method is the determination of REE abundances in meteoritic phosphates. Results are shown to be in good agreement with previous INAA and ion probe determinations. The merrillites in the St. Severin amphoterite are richer in REE than the apatites (the enrichment factors, for various REE, range from 2.3 to 14.2) in contradiction with the results of Ebihara and Honda (1983). Provided good standards for other mineral phases are found or implanted marker ion techniques are used, the method should find a wide range of applications for the study of both terrestrial and extraterrestrial crystals at the microscopic level.

Crozaz, G.↗

Physical understanding of cryogenic implant benefits for electrical junction stability

We investigate the effect of cryogenic temperature implants on electrical junction stability for ultra shallow junction applications for sub-32 nm technology nodes and beyond. A comprehensive study was conducted to gain physical understanding of the impact of cryogenic temperature implants on dopant-defect interactions. Carborane (C{sub 2}B{sub 10}H{sub 12}) molecule, a potential alternative to monomer boron was implanted in carbon preamorphized silicon substrates at cryogenic implant temperatures. Results indicate implants at cryogenic temperatures increase dopant activation with reduced diffusion, resulting in lower sheet resistance for a lower junction depth. Further, this study emphasizes the benefits of co-implants performed at cryogenic temperatures as alternative to traditional preamorphizing implants.

36 MATERIALS SCIENCE↗

Diffusion and Interaction of In and As Implanted into SiO{sub 2} Films

By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO{sub 2} films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As{sup +}-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO{sub 2} with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D{sub As} = 3.2 × 10{sup –14} cm{sup 2} s{sup –1}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5-1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic binary collision model and to simulations using the Monte-Carlo code SDTRIMSP . The influence of the contribution of implanted primary ions on energy distributions of sputtered and scattered particles is studied in simulations. It is found that a 10% variation of the target composition leads to detectable but small differences in the energy distributions of scattered ions. Comparison with previously reported data for other ion/target configurations confirms the presence of similar trends and anisotropic effects: The number of high-energy sputtered ions increases with increasing energy of incident ions and decreasing scattering angle. The effect of the ion/target mass ratio is additionally investigated. Small differences are observed with the change of the primary ion species: The closer the mass ratio to unity, the higher the average energy of sputtered ions. Finally, the presence of peaks, assigned to different mechanisms of direct scattering, strongly depends on the ion/target mass ratio.

42 ENGINEERING↗

Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere

It has been found that “hot” high-fluence Zn{sup +} implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in SiO{sub 2} film. The precipitate’s crystalline nature is confirmed by HRTEM studies. Post-implantation annealing at 700°C for 60 min leads to Zn atoms redistribution in implanted region, formation of the larger crystallites (up to 25 nm) and the small Zn nanoparticles surrounded by the oxide shells (core (Zn)/shell(ZnO) structure) as well as the voids formation at the interface “Zn nanocluster/SiO{sub 2} matrix”. The number of the core (Zn)/shell (ZnO) structures and the voids increases after annealing at 700°C for 120 min.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Si film separation obtained by high energy proton implantation

High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 {mu}m. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100) and (111)Si after high energy implantation in order to understand the origin of such a behavior. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Fracture therefore propagates easily in (111)Si, while it requires higher fluence to overcome unfavorable precursors orientation and propagate in (100)Si.

36 MATERIALS SCIENCE↗

Stability, Electronic and Magnetic Properties of Rare Earth (Eu, Tm) Implanted InGaN

The electronic structure and magnetic behavior of InGaN:RE (RE = Eu, Tm) have been studied by using scalar relativistic full-potential linear augmented-plane-wave plus local orbital (FPLAPW + lo) calculations with LSDA+U approximation. Band structure and density of states are analyzed. It appears that the In-site is the preferred site for doping InGaN alloy with rares earth (Eu, Tm) from the formation energy. Our study reveals that these materials are semiconductors with a direct band gap of 1.2345 eV and 1.3657 eV for InGaN:Eu and InGaN:Tm respectively. The total energy of the FM phase is lower than the AFM total energy; this confirms the fact that the ground state at zero temperature is ferromagnetic. A small-induced magnetic moment on other nonmagnetic atoms (Ga, In, and N) and the total magnetic moment of these compounds is mainly due to RE-4f states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

FASTGRASS implementation in BISON and Fission gas behavior characterization in UO 2 and connection to validating MARMOT

This activity is supported by the US Nuclear Energy Advanced Modeling and Simulation (NEAMS) Fuels Product Line (FPL). Two major accomplishments in FY 15 are summarized in this report: (1) implementation of the FASTGRASS module in the BISON code; and (2) a Xe implantation experiment for large-grained UO 2 . Both BISON AND MARMOT codes have been developed by Idaho National Laboratory (INL) to enable next generation fuel performance modeling capability as part of the NEAMS Program FPL. To contribute to the development of the Moose-Bison-Marmot (MBM) code suite, we have implemented the FASTGRASS fission gas model as a module in the BISON code. Based on rate theory formulations, the coupled FASTGRASS module in BISON is capable of modeling LWR oxide fuel fission gas behavior and fission gas release. In addition, we conducted a Xe implantation experiment at the Argonne Tandem Linac Accelerator System (ATLAS) in order to produce the needed UO 2 samples with desired bubble morphology. With these samples, further experiments to study the fission gas diffusivity are planned to provide validation data for the Fission Gas Release Model in MARMOT codes.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes

An innovative Kinetic Monte Carlo (KMC) code has been developed, which rules the post-implant kinetics of the defects system in the extremely far-from-the equilibrium conditions caused by the laser irradiation close to the liquid-solid interface. It considers defect diffusion, annihilation and clustering. The code properly implements, consistently to the stochastic formalism, the fast varying local event rates related to the thermal field T(r,t) evolution. This feature of our numerical method represents an important advancement with respect to current state of the art KMC codes. The reduction of the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. Phosphorus activation efficiency, experimentally determined in similar conditions, has been related to the emerging damage scenario.

36 MATERIALS SCIENCE↗

Microstructural Effects of High Dose Helium Implantation in ErD 2

Metal hydrides can store hydrogen isotopes with high volumetric density. In metal tritides, tritium beta decay can result in accumulation of helium within the solid, in some cases exceeding 10 at.% helium after only 4 years of aging. Helium is insoluble in most materials, but often does not readily escape, and instead coalesces to form nanoscale bubbles when helium concentrations are near 1 at.%. Blistering or spallation often occurs at higher concentrations. Radioactive particles shed during this process present a potential safety hazard. This study investigates the effects of high helium concentrations on erbium deuteride (ErD 2 ), a non-radioactive surrogate material for erbium tritide (ErT 2 ). To simulate tritium decay in the surrogate, high doses of 120 keV helium ions were implanted into ErD 2 films at room temperature. Scanning and transmission electron microscopy indicated spherical helium bubble formation at a critical concentration of 1.5 at.% and bubble linkage leading to nanoscale crack formation at a concentration of 7.5 at.%. Additionally, crack propagation occurred through the nanocrack region, resulting in spallation extending from the implantation peak to the surface. Electron energy loss spectroscopy was utilized to confirm the presence of high-pressure helium in the nanocracks, suggesting that helium gas plays a predominant role in deformation. This work improves the overall understanding of helium behavior in ErD 2 by using modern characterization techniques to determine: the critical helium concentration required for bubble formation, the material failure mechanism at high concentration, and the nanoscale mechanisms responsible for material failure in helium implanted ErD 2 .

36 MATERIALS SCIENCE↗

Development of Ultra Small Scale Mechanical Testing and Localized He Implantation for Nuclear Applications

Mechanical properties degradation of components deployed in nuclear applications has been a concern since the deployment of first generation nuclear power plants. Radiation damage along with environmental degradation, elevated temperatures, and long term deployment of nuclear structures pose a challenging environment for all materials in these applications. Traditionally, the mechanical properties are assessed by standardized macroscopic testing methods. While those are providing engineering relevant data these techniques do have limitations, especially on reactor irradiated materials, due to the large size of the samples. Limitations on the amount of radioactivity of large samples must be applied for research applications as they are conducted at universities. In addition it can be difficult to retrieve sufficiently large amounts of material from an operating reactor component. Therefore smaller sample sizes are desirable and reduce the amount of radioactive material which needs to be handled or material which needs to be retrieved. In addition, the number of tests which can be performed on materials irradiated in a test reactor program is limited due to limited space in specific dose and temperature positions. Downsizing of the mechanical test can overcome this issue and perform more tests on the same amount of irradiated materials, reducing the statistical uncertainties. In addition, smaller scale samples allow access to specific regions of interest in a material or component, be it the zone in front of a crack tip or the sampling of very small components like springs or welded areas. In addition ion beam irradiation has become an integral part of nuclear materials research to enhance the understanding of radiation damage in materials in a time and cost effective fashion. The drawback of ion beam irradiation is the small penetration depth of the ions into the material making localized microstructural characterization as well as small scale mechanical testing necessary. Another more fundamental motivation is the fact that since the beginning of electron microscopy, one has been concerned about imaging and quantifying defects in materials. Multiscale tools to image a large range of radiation induced defects have been established starting from atom probe tomography to transmission electron microscopy, up to scattering techniques. Mechanical testing, however, has always been performed on a large scale, and an attempt to match the same scale where a defect is observed with the materials' mechanical property response has not yet been realized. However, the question of separate effects testing on specific radiation induced defects remains and is an additional driving force for small scale mechanical testing. In this work we present an approach for small scale mechanical testing in irradiated materials and the variety of possible test methods developed today. We also present recent efforts of performing localized ion beam implantation to achieve a number of different doses in the same region of interest enhancing comparability and quantification of observed phenomena. It is the intention to give the reader an overview of the different microscale mechanical testing techniques possible today as well as an introduction of a novel ion beam irradiation method using a newly established capability. In this paper we can't discuss all aspects of all small scale mechanical testing of irradiated materials However, It does give an overview over the techniques enabled due to recent effort and enhanced instrument capability. While indentation or micro compression testing has been performed previously tensile testing and ion beam irradiation using the He ion beam microscope are novel approaches not attempted previously. (authors)

36 MATERIALS SCIENCE↗

Suppressed gross erosion of high-temperature lithium via rapid deuterium implantation

Lithium-coated high-Z substrates are planned for use in the NSTX-U divertor and are a candidate plasma facing component (PFC) for reactors, but it remains necessary to characterize the gross Li erosion rate under high plasma fluxes (>10 23 m -2 s -1 ), typical for the divertor region. In this work, a realistic model for the compositional evolution of a Li/D layer is developed that incorporates first principles molecular dynamics (MD) simulations of D diffusion in liquid Li. Predictions of Li erosion from a mixed Li/D material are also developed that include formation of lithium deuteride (LiD). The erosion rate of Li from LiD is predicted to be significantly lower than from pure Li. This prediction is tested in the Magnum-PSI linear plasma device at ion fluxes of 10 23 -10 24 m -2 s -1 and Li surface temperatures. ≤800 °C. Li/LiD coatings ranging in thickness from 0.2 to 500 μm are studied. The dynamic D/Li concentrations are inferred via diffusion simulations. The pure Li erosion rate remains greater than Langmuir Law evaporation, as expected. For mixed-material Li/LiD surfaces, the erosion rates are reduced, in good agreement with modelling in almost all cases. Lastly, these results imply that the temperature limit for a Li-coated PFC may be significantly higher than previously imagined.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗