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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Molecular Dynamics Study of Creep Deformation in Nickel-based Superalloy

The present study employs molecular dynamics simulations of Ni-based superalloy to investigate the creep behavior under uniaxial compression test. Dislocation dynamics is analyzed for the nickel-based single crystal superalloy with the presence of void and with varying the distribution of gamma-prime phase The results show that multiple-void systems are more prone to yield than single-void systems and single-void systems are more prone to yield than the system withoutvoid. From the simulations, it has been determined that the creep mechanism in Ni/Ni3Al is subject to change on the applied stress depending on the distribution of gamma-prime phases change. Dislocation behavior is also observed in addition to the time evolution of dislocation nucleation and growth to quantify the propensity and mechanism of creep in nickel-based single crystal superalloy. The studies confirmed that dislocation length prior to plastic deformation decreased as the number of voids increased. In addition, the deformation behavior for finegrained nickel-based polycrystalline superalloy upon grain size variation is also investigated. Our findings show that both the movement mechanisms of the grains and grain boundaries and the relationship between grain size and yield strength are highly affected by the grain size of the materials. All the databases have then been classified to accurately predict the target class vi machine learning using the data mining tool WEKA.

creep, nickel-based superalloy, molecular dynamics↗
NASA NTRS1981

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Grung, B. L.↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
NASA NTRS1979

Silicon-on-ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

Significant progress is reported in fabricating a 4 sq cm cell having a 10.1 percent conversion efficiency and a 10 sq cm cell having a 9.2 percent conversion efficiency. The continuous (SCIM) coater succeeded in producing a 16 sq cm coating exhibiting unidirectional solidification and large grain size. A layer was grown at 0.2 cm/sec in the experimental coater which was partially dendritic but also contained a large smooth area approximately 100 micron m thick. The dark characteristic measurements of a typical SCC solar cell yield shunt resistance values of 10K ohms and series resistance values and 0.4 ohm. The production dip-coater is operating at over 50 percent yield in terms of good cell quality material. The most recent run yielded 13 good substrates out of 15.

Chapman, P. W.↗
DOE OSTI2020

X-ray topographic study of Bridgman-grown CdZnTeSe

We have characterized the structural quality of Cd 0.9 Zn 0.1 Te 0.93 Se 0.07 ingot grown by the vertical Bridgman growth technique. The structural quality of Cd 0.9 Zn 0.1 Te 0.93 Se 0.07 ingot along the length was investigated via X-ray topography in the reflection mode using a white beam synchrotron radiation source. The X-ray topography data revealed the presence of very few sub grain boundaries and no sub-grain boundary network for the CdZnTeSe samples used in this study.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Microstructure effects on fatigue crack growth in additively manufactured Ti–6Al–4V

In this article we investigate the relationship between the different microstructural features in additively-manufactured (AM) Direct Metal Laser Deposited Ti–6Al–4V alloys and the observed fatigue and fracture behaviors, using high resolution Digital Image Correlation experiments and microstructural imaging. Fatigue cracks in the AM specimens were observed to periodically propagate parallel to the α' laths and deflect at prior β grain boundaries. Corresponding plastic strain distributions show needle-like regions of high strain that correlated to the α' laths, suggesting significant influence of the microstructure on the plastic zone. In many cases, the fatigue cracks also propagated towards voids from unsintered powder or gas entrapment in the vicinity. In several experiments, premature failure of the AM specimens occurred under monotonic fracture or cyclic fatigue loading, which we attribute to the presence of void clusters located near the crack-tip. These fatigue and fracture characteristics were similar for AM specimens of different build-orientations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A nonlinear elasto-plastic bond model for the discrete element modeling of woody biomass particles

This work presents an experiment-informed, semi-empirical, elasto-plastic bond model for the discrete element modeling of woody biomass particles. The model renders nonlinear plastic deformation of materials when subjected to compression/tension, bending, and twisting, essential for accurately simulating the behavior of biomass in comminution. The model is implemented in an open-source DEM package LIGGGHTS and is assessed in a number of verification tests. The model is applied to simulate the fracturing test of notched loblolly pine blocks. Reduced bond strength is prescribed to the weak planes along the growth rings. It is found that the square-root formulation for describing the elasto-plastic normal bond contact delivers the best agreement with the experimental data over its linear and quadratic counterparts. Furthermore, the model predicts a strong anisotropic behavior of wood blocks with regard to the grain orientations, indicating that the cutting angle should be an important attribute for the optimization of biomass comminution.

42 ENGINEERING↗
NASA NTRS1987

Diffuse and dark clouds in the interstellar medium

Observations of clouds in the ISM of the Galaxy and the Magellanic Clouds, obtained with the IUE satellite since its launch in 1978, are reviewed. Consideration is given to the techniques used to analyze IUE Maxwellian growth curves and oscillator strengths, the general structure of the Galactic ISM, the high-velocity clouds, heavy-element depletion, and observations toward strongly reddened stars in the outer portions of dark clouds. Theoretical models of interstellar dust formation and selective and nonselective removal of elements from dust grains are discussed; observations of reflection nebulae and their implications for light scattering by dust are examined; the dynamics and ionization structure of the Galactic halo ISM are described; and the Magellanic Cloud observations are briefly characterized. Diagrams, graphs, and tables of numerical data are provided.

De Boer, Klaas S.↗
DOE OSTI2025

Growth and structure of alpha-Ta films for quantum circuit integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. The remaining loss pathways originate in microscopic defects that manifest as two level systems (TLSs) at low temperatures. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for the growth of fully-oriented films with α-Ta [1 1 1]//Al2O3 [0 0 0 1] and α-Ta [1 −1 0]//Al2O3 [1 0 −1 0] orientational relationships and having residual resistivity ratio (RRR) ∼ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ∼ 30. We further demonstrate airbridge fabrication using Nb to nucleate α-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 ± 0.3 × 106 at 10 mK (for a waveguide gap and conductor width of 3 and 6 μm, respectively). Structural characterization using scanning electron microscopy, x-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights into the fabrication of advanced superconducting devices including qubit arrays and guide future works on crystallographically deterministic qubit fabrication.

42 ENGINEERING↗
NASA NTRS1979

Analysis of ultraviolet spectrophotometric data from Copernicus

Ultraviolet spectral data from the OAO 3 satellite are being used to study interstellar absorption lines and stellar and circumstellar lines in hot stars. The interstellar data are beneficial in analyzing the depletions of heavy elements from the gas phase and in elucidating how these depletions depend on physical conditions. Abundances in separate velocity components were determined from line profiles. Observations were carried out for interstellar abundances, both atomic and molecular, towards a number of stars. The better quality data are being analyzed for profile information and the lesser data are being used in curve-of-growth analyses. Molecular observations were carried out as well, N2 was sought; interstellar C2 was detected and its rotational excitation utilized to establish limits in interstellar cloud temperatures. An extensive search for H2O resulted in a tentative identification which will produce new information on chemical reaction rates. Interstellar depletions and grain properties in the rho Ophiuchi cloud, stellar wind variability, and circumstellar lines are also under study.

Snow, T. P., Jr.↗
NASA NTRS1991

Space dust and debris; Proceedings of the Topical Meeting of the Interdisciplinary Scientific Commission B (Meetings B2, B3, and B5) of the COSPAR 28th Plenary Meeting, The Hague, Netherlands, June 25-July 6, 1990

The present conference on space dust and debris encompasses orbital debris, in situ measurements and laboratory analysis of space-dust particles, comparative studies of comets, asteroids, and dust, the protection and maneuvering of spacecraft in space-debris environments, and the out-of-elliptic distribution of interplanetary dust derived from near-earth flux. Specific issues addressed include asteroid taxonomy, the optical properties of dust from cometary and interplanetary grains, light scattering by rough surfaces on asteroidal/lunar regoliths, and the first results of particulate impacts and foil perforations on the Long Duration Exposure Facility. Also addressed are collision probability and spacecraft disposition in the geostationary orbit, a flash on the moon caused by orbital debris, the limits of population growth in low earth orbit due to collisional cascading, and the simulation of cosmic man-made dust effects on space-vehicle elements in rocket and laboratory experiments.

Kessler, D. J.↗
NASA NTRS2018

Can Egypt Become Self-Sufficient in Wheat?

Egypt produces half of the 20 million tons of wheat that it consumes with irrigation and imports the other half. Egypt is also the world's largest importer of wheat. The population of Egypt is currently growing at 2.2% annually, and projections indicate that the demand for wheat will triple by the end of the century. Combining multi-crop and -climate models for different climate change scenarios with recent trends in technology, we estimated that future wheat yield will decline mostly from climate change, despite some yield improvements from new technologies. The growth stimulus from elevated atmospheric CO2 will be overtaken by the negative impact of rising temperatures on crop growth and yield. An ongoing program to double the irrigated land area by 2035 in parallel with crop intensification could increase wheat production and make Egypt self-sufficient in the near future, but would be insufficient after 2040s, even with modest population growth. Additionally, the demand for irrigation will increase from 6 to 20 billion m3 for the expanded wheat production, but even more water is needed to account for irrigation efficiency and salt leaching (to a total of up to 29 billion m3). Supplying water for future irrigation and producing sufficient grain will remain challenges for Egypt.

Asseng, Senthold↗
NASA NTRS2007

Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze

In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.

Su, Ching-Hua↗
DOE OSTI2023

Epitaxial growth and characterization of magnesium gallate (MgGa 2 O 4 ) thin films by pulsed laser deposition

To advance high power device application of MgGa 2 O 4 , it is imperative to achieve crystalline epitaxial thin films and to observe its materials’ characteristics within a wide range of growth conditions. However, there is no published work on the growth of this promising ultrawide bandgap material till this day. In this study, we report the crystalline growth of MgGa 2 O 4 thin films on c-plane (006) sapphire substrates using the pulsed laser deposition (PLD) technique in a broad range of temperature and oxygen pressure. The temperature range for this crystalline growth was within the temperature range of 300°C to 700°C and a pressure range of 1x10 -1 to 1x10 -3 Torr. Within this parameter range, the structural, chemical, optical, and surface property of MgGa 2 O 4 thin films have been investigated. Specifically, the acquired XRD patterns confirmed the film growth along the [111] preferential crystal orientation in the lattice. Here, the rocking curve measurement of the prominent (222) plane showed an increasing trend of the crystallinity with growth temperature and pressure. Furthermore, the XRD phi (φ) scan demonstrated the six-fold rotational symmetry of the MgGa 2 O 4 films and the epitaxial relationship of 30° between the film and the sapphire substrate. The XPS spectra confirmed the presence of +2 and +3 oxidation state for Mg and Ga respectively, in the films. The direct bandgap of MgGa 2 O 4 films was obtained ~5.27±0.03 eV by analyzing the UV-Vis absorbance spectra using the Tauc equation. The SEM images exhibited a granular surface morphology of the MgGa 2 O 4 films with an increasing trend in the grain size from low to high temperature and pressure. The refractive index and thickness of these films were in the range of ~1.90±0.02 and ~70±2.0 nm, respectively determined by fitting the spectroscopic ellipsometry data.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
NASA NTRS1988

The growth of the continental crust: Constraints from radiogenic isotope geochemistry

Most models for evolution of continental crust are expressed in the form of a diagram illustrating the cumulative crustal mass (normalized relative to the present crustal mass) as a function of time. Thus, geochronological data inevitably play a major role in either constructing or testing crustal growth models. For all models, determining the start-time for effective crustal accretion is of vital importance. To this end, the continuing search for, and reliable characterization of, the most ancient crustal rock-units remains a worthy enterprise. Another important role for geochronology and radiogenic isotope geochemistry is to assess the status of major geological events as period either of new crust generation or of reworking of earlier formed continental crust. For age characterization of major geological provinces, using the critieria outined, the mass (or volume) of crust surviving to the present day should be determinable as a function of crust formation age. More recent developments, however, appear to set severe limitations on recycling of crust, at least by the process of sediment subduction. In modeling crustal growth without recycling, valuable constaints on growth rate variations through time can be provided if variations in the average age of the continental crust can be monitored through geological history. The question of the average age of the exposed continental crust was addressed by determining Sm-Nd crustal residence model ages (T-CR) for fine-grained sediment loads of many of the world's major rivers.

Taylor, Paul N.↗
NASA NTRS1991

Crystal regularity with high-resolution synchrotron X-radiation diffraction imaging

New, high-resolution sources of X-radiation such as monochromatic synchrotron radiation beams with subarcsec divergence allow observation of regularities in a range of crystals with sufficient clarity for comprehensive analyses, whose results can deepen understanding of the nature of various crystal irregularities, their sources, and their effects on device performance. An account is presented of the results thus achievable with irregularities encountered in lattice orientation and strain, grain and subgrain boundaries, dislocations, domain boundaries, additional phases, and surface scratches. Significant achievements to date encompass the observation of critical anomalies in lead tin telluride, the reconciliation of disparate observations of GaAs, the determination of the performance effects of irregularities in mercuric iodide, and the characterization of the origins of crystal growth in bismuth silicon oxide.

Steiner, Bruce↗
NASA NTRS1993

Micrometeorite dynamic pyrometamorphism: Nonstoichiometric clinoenstatite (CLEN)

Polymorphs of enstatite are common phases in many meteorites. They contain clues on their formation and the thermal evolution of their host rock which includes shock metamorphism. Rare, micron-sized, CLEN whiskers and thin platelets in chondritic porous micrometeorites were interpreted as solar nebula condensates that remained unaffected during atmospheric entry flash-heating. This CLEN formed by protoenstatite (PEN) inversion whereby the surface energy of the micron-sized PEN crystals aided the OREN-CLEN transformation or by metastable growth. Ca-poor, Mg,Fe-pyroxene with unequilibrated, intraparticle, Mg/(Mg+Fe) distributions occur in most chondritic micrometeorites. These distributions are a parent body signature that survived dynamic pyrometamorphism because the duration of the thermal spike during atmospheric entry is too short but this conclusion does not consider the ultrafine grain size of micrometeorites. The maximum temperature and duration of the heating event will depend on the kinetic energy and entry angle of the incoming micrometeorite. But lacking detailed petrological data for an individual particle, its thermal profile during atmospheric entry can not be deduced from its mass alone as a function of entry angle. In order to constrain dynamic pyrometamorphism in unmelted micrometeorites, I determined the petrological composition and silicate mineralogy in non-chondritic micrometeorites L2005T13, L2005E40, and L2006A28.

Rietmeijer, Frans J. M.↗