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High-throughput combinatorial synthesis of Al 1− x RE x N (RE = Pr, Tb) thin films with 0 < x < 0.4 was performed to assess composition-phase-property relationships in an emerging materials family.
Sm2Fe17C3 phase (2:17) is metastable and exhibits excellent intrinsic hard magnetic properties. Doping elements such as Ga facilitate the formation of a single-phase 2:17 structure in arc-melted Sm2Fe17Cx alloys, which opens a promising route for fabricating fully dense bulk Sm2Fe17Cx magnets via high-temperature techniques such as melting and sintering. First-principles electronic structure calculation indicates that Ga prefers to partially replace Fe at the 9d and 18h crystallographic sites in Sm2Fe17C3 and Sm2Fe17, respectively. This difference in site preference is attributed to the distinct chemical environments surrounding the Fe atoms in the two compounds. Ga substitution favors the Sm–Ga bonding formation while avoiding Ga–C interactions. Doped Ga atoms result in more negative formation energy in Sm2(Fe, Ga)17C3, indicating improved structural stability. Crystal Orbital Hamilton Population analysis reveals that carbon insertion weakens the bonding of Sm-Fe (18h) and Sm-Fe (18f) in Sm2Fe17C3. Ga doping facilitates electron redistribution across chemical bonds, thereby reinforcing Fe(18h)–Sm and Fe(18f)–Sm interactions and stabilizing the carbon-centered octahedral local structure. This synergistic effect contributes significantly to the observed enhancement in phase stability of Sm2(Fe, Ga)17Cx. These findings suggest that chemical bond engineering through the selective doping of Ga can enhance phase stability and facilitate the synthesis of Sm2Fe17C3, providing a viable strategy for developing advanced magnets.
Chitin is an abundant biopolymer and pathogen-associated molecular pattern that stimulates a host innate immune response. Mammals express chitin-binding and chitin-degrading proteins to remove chitin from the body. One of these proteins, Acidic Mammalian Chitinase (AMCase), is an enzyme known for its ability to function under acidic conditions in the stomach but is also active in tissues with more neutral pHs, such as the lung. Here, we used a combination of biochemical, structural, and computational modeling approaches to examine how the mouse homolog (mAMCase) can act in both acidic and neutral environments. We measured kinetic properties of mAMCase activity across a broad pH range, quantifying its unusual dual activity optima at pH 2 and 7. We also solved high-resolution crystal structures of mAMCase in complex with oligomeric GlcNAcn, the building block of chitin, where we identified extensive conformational ligand heterogeneity. Leveraging these data, we conducted molecular dynamics simulations that suggest how a key catalytic residue could be protonated via distinct mechanisms in each of the two environmental pH ranges. These results integrate structural, biochemical, and computational approaches to deliver a more complete understanding of the catalytic mechanism governing mAMCase activity at different pH. Engineering proteins with tunable pH optima may provide new opportunities to develop improved enzyme variants, including AMCase, for therapeutic purposes in chitin degradation.
Development of inside diameter slicing technology to significantly increase the number of useable slices per inch of crystal over industry practice is discussed. The required reduction of both blade and slice thickness is to be accomplished by a combination of three key elements of slicing technology: (1) ingot rotation with minimum exposed blade area; (2) dynamic cutting edge control; and (3) the use of prefabricated insert blades. Design modifications on a slicing saw with microprocessor controls and hardware fabrication to complete this conversion were initiated. Several runs were conducted on the engineering saw incorporating the method of ingot rotation. Ingots with diameters up to six inches were sliced successfully on a production saw.
Local heat transfer coefficients were measured along the midchord of a three-times-size turbine vane airfoil in a static cascade operated at roon temperature over a range of Reynolds numbers. The test surface consisted of a composite of commercially available materials: a Mylar sheet with a layer of cholestric liquid crystals, which change color with temperature, and a heater made of a polyester sheet coated with vapor-deposited gold, which produces uniform heat flux. After the initial selection and calibration of the composite sheet, accurate, quantitative, and continuous heat transfer coefficients were mapped over the airfoil surface. Tests were conducted at two free-stream turbulence intensities: 0.6 percent, which is typical of wind tunnels; and 10 percent, which is typical of real engine conditions. In addition to a smooth airfoil, the effects of local leading-edge sand roughness were also examined for a value greater than the critical roughness. The local heat transfer coefficients are presented for both free-stream turbulence intensities for inlet Reynolds numbers from 1.20 to 5.55 x 10 to the 5th power. Comparisons are also made with analytical values of heat transfer coefficients obtained from the STAN5 boundary layer code.
Local heat transfer coefficients were measured along the midchord of a three-times-size turbine vane airfoil in a static cascade operated at room temperature over a range of Reynolds numbers. The test surface consisted of a composite of commercially available materials: a Mylar sheet with a layer of cholestric liquid crystals, which change color with temperature, and a heater made of a polyester sheet coated with vapor-deposited gold, which produces uniform heat flux. After the initial selection and calibration of the composite sheet, accurate, quantitative, and continuous heat transfer coefficients were mapped over the airfoil surface. Tests were conducted at two free-stream turbulence intensities: 0.6 percent, which is typical of wind tunnels; and 10 percent, which is typical of real engine conditions. In addition to a smooth airfoil, the effects of local leading-edge sand roughness were also examined for a value greater than the critical roughness. The local heat transfer coefficients are presented for both free-stream turbulence intensities for inlet Reynolds numbers from 1.20 to 5.55 x 10 to the 5th power. Comparisons are also made with analytical values of heat transfer coefficients obtained from the STAN5 boundary layer code.
Using density functional theory combined with the Boltzmann transport equation, we uncover a new class of high-performance thermoelectric materials, i.e., supertetrahedral Ga 4 C-family materials characterized by an ultrahigh thermoelectric figure of merit (ZT), which is produced both by a large power factor and ultralow lattice thermal conductivity. The former is contributed by multiple electronic band degeneracies, flat bands and valley anisotropy, while the latter is contributed both by strong phonon scattering and low phonon group velocity. Furthermore, we find that tensile strain engineering may further suppress lattice thermal conductivity, while well retaining the multi-band degeneracies, valley anisotropy and flat bands. In addition to the band degeneracy, the scattering mechanism of the system can also dominate the power factor in the process of strain implementation. Consequently, a novel thermoelectric phenomenon, i.e., a high thermoelectric figure of merit, is observed in Ca 4 C with a ZT value larger than 4.4 under a small strain ratio (0.75%). In conclusion, our theoretical studies not only uncover a new class of high-performance thermoelectric materials integrating multiple effective mechanisms, but also establish a realistic material plateau to investigate the competitive effect of multiple factors on enhancing the thermoelectric figure of merit.
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Radiation of the plant pyridoxal 5'-phosphate (PLP)-dependent aromatic L -amino acid decarboxylase (AAAD) family has yielded an array of paralogous enzymes exhibiting divergent substrate preferences and catalytic mechanisms. Plant AAADs catalyze either the decarboxylation or decarboxylation-dependent oxidative deamination of aromatic L -amino acids to produce aromatic monoamines or aromatic acetaldehydes, respectively. These compounds serve as key precursors for the biosynthesis of several important classes of plant natural products, including indole alkaloids, benzylisoquinoline alkaloids, hydroxycinnamic acid amides, phenylacetaldehyde-derived floral volatiles, and tyrosol derivatives. In this paper, we present the crystal structures of four functionally distinct plant AAAD paralogs. Through structural and functional analyses, we identify variable structural features of the substrate-binding pocket that underlie the divergent evolution of substrate selectivity toward indole, phenyl, or hydroxyphenyl amino acids in plant AAADs. Moreover, we describe two mechanistic classes of independently arising mutations in AAAD paralogs leading to the convergent evolution of the derived aldehyde synthase activity. Applying knowledge learned from this study, we successfully engineered a shortened benzylisoquinoline alkaloid pathway to produce (S)-norcoclaurine in yeast. This work highlights the pliability of the AAAD fold that allows change of substrate selectivity and access to alternative catalytic mechanisms with only a few mutations.
The long range position-determining system (LRPDS) has been developed by the Corps of Engineers to provide the Field Army with a rapid and accurate positioning capability. The LRPDS consists of an airborne reference position set (RPS), up to 30 ground based positioning sets (PS), and a position computing central (PCC). The PCC calculates the position of each PS based on the range change information provided by each Set. The positions can be relayed back to the PS again via RPS. Each PS unit contains a double oven precise crystal oscillator. The RPS contains a Hewlett-Packard cesium beam standard. Frequency drifts and off-sets of the crystal oscillators are taken in account in the data reduction process. A field test program was initiated in November 1972. A total of 54 flights were made which included six flights for equipment testing and 48 flights utilizing the field test data reduction program. The four general types of PS layouts used were: short range; medium range; long range; tactical configuration. The overall RMS radial error of the unknown positions varied from about 2.3 meters for the short range to about 15 meters for the long range. The corresponding elevation RMS errors vary from about 12 meters to 37 meters.
In 2001 NASA created a fifth Strategic Enterprise, the Office of Biological and Physical Research (OBPR), to bring together physics, chemistry, biology, and engineering to foster interdisciplinary research. The Materials Science Program is one of five Microgravity Research disciplines within this new Enterprise's Division of Physical Sciences Research. The Materials Science Program will participate within this new enterprise structure in order to facilitate effective use of ISS facilities, target scientific and technology questions and transfer results for Earth benefits. The Materials Science research will use a low gravity environment for flight and ground-based research in crystallization, fundamental processing, properties characterization, and biomaterials in order to obtain fundamental understanding of various phenomena effects and relationships to the structures, processing, and properties of materials. Completion of the International Space Station's (ISS) first major assembly, during the past year, provides new opportunities for on-orbit research and scientific utilization. The Enterprise has recently completed an assessment of the science prioritization from which the future materials science ISS type payloads will be implemented. Science accommodations will support a variety of Materials Science payload hardware both in the US and international partner modules with emphasis on early use of Express Rack and Glovebox facilities. This paper addresses the current scope of the flight and ground investigator program. These investigators will use the various capabilities of the ISS lab facilities to achieve their research objectives. The type of research and classification of materials being studied will be addressed. This includes the recent emphasis being placed on radiation shielding, nanomaterials, propulsion materials, and biomaterials type research. The Materials Science Program will pursue a new, interdisciplinary approach, which contributes, to Human Space Flight Exploration research. The Materials Science Research Facility (MSRF) and other related American and International experiment modules will serve as the foundation for the flight research environment. A summary will explain the concept for materials science research processing capabilities aboard the ISS along with the various ground facilities necessary to support the program.
Some wholly aromatic ether-imides consisting of rod-shaped, relatively-low-mass molecules that can form liquid crystals have been investigated for potential utility as electron-donor-type (ntype) organic semiconductors. It is envisioned that after further research to improve understanding of their physical and chemical properties, compounds of this type would be used to make thin film semiconductor devices (e.g., photovoltaic cells and field-effect transistors) on flexible electronic-circuit substrates. This investigation was inspired by several prior developments: Poly(ether-imides) [PEIs] are a class of engineering plastics that have been used extensively in the form of films in a variety of electronic applications, including insulating layers, circuit boards, and low-permittivity coatings. Wholly aromatic PEIs containing naphthalene and perylene moieties have been shown to be useful as electrochromic polymers. More recently, low-molecular-weight imides comprising naphthalene-based molecules with terminal fluorinated tails were shown to be useful as n-type organic semiconductors in such devices as field-effect transistors and Schottky diodes. Poly(etherimide)s as structural resins have been extensively investigated at NASA Langley Research Center for over 30 years. More recently, the need for multi-functional materials has become increasingly important. This n-type semiconductor illustrates the scope of current work towards new families of PEIs that not only can be used as structural resins for carbon-fiber reinforced composites, but also can function as sensors. Such a multi-functional material would permit so-called in-situ health monitoring of composite structures during service. The work presented here demonstrates that parts of the PEI backbone can be used as an n-type semiconductor with such materials being sensitive to damage, temperature, stress, and pressure. In the near future, multi-functional or "smart" composite structures are envisioned to be able to communicate such important parameters to the flight crew and provide vital information with respect to the operational status of their aircraft.
Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.
Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.
The most effective way to enhance the dissipation-free supercurrent in the presence of a magnetic field for type II superconductors is to introduce defects that act as artificial pinning centers (APCs) for vortices. For instance, the in-field critical current density of doped BaFe 2 As 2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion irradiation. The technique of ion irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains with widths of approximately 30–60 nm. The grains are rotated around the b- (or a-) axis by 1.5° and around the c-axis by –1°, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.
The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.
Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.
Ternary transition metal dichalcogenides (TMDs) provide a versatile platform to explore novel electronic and magnetic ground states via compositional substitution and local structural modulations. Using a combination of scanning tunneling microscopy and spectroscopy (STM/S), magnetic property measurements, and density functional theory (DFT) calculations, the emergence of local magnetic moments driven by the clustering of Ta atoms in ternary TaWSe 2 single crystals is analyzed. STM topography reveals triangular clusters of Ta atoms embedded within W-rich regions of TaWSe 2 . These clusters exhibit a consistent shape and an orderly arrangement throughout the surfaces. DFT calculations show that these Ta clusters induce local strain, giving rise to localized magnetic moments. The magnetic behavior is further corroborated by temperature-dependent magnetization measurements, which exhibit a magnetic anomaly at ∼50 K. In conclusion, this study offers a pathway to engineer magnetism in TMD systems with potential applications in spintronic and quantum materials.