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At least 1,171 records · Page 65

X-ray and γ-ray beam interstellar communication and implications for SETI

The possibility of detecting artificial signals transmitted by alien civilizations via collimated X-ray or gamma-ray beams is investigated. The prospect of using such beams for human communication within the solar system and beyond is also discussed. Detector responses were simulated for input signals and analyzed using relative entropy. For simplicity, all signals were assumed to use on-off keying (OOK) modulation. “Real” signals were generated by taking digital files and sequentially feeding their raw binary data to the detector simulator, the resulting normalized information content of the detector signals was plotted and compared to random noise signals. Since jpeg files contain compressed information, these served as a proxy for artificial alien signals. This showed that there is a clear difference in measured information content between natural and artificial signals, even with relatively poor time resolution in the detector causing the signals to be smeared (dead-time/rise-time intervals many times longer than the duration between signal pulses). It was found that so long as the signal lasts for at least several rise-time/dead-time intervals, the distinction between random and artificial signals is obvious. A space-telescope with high time resolution for searching for such signals is briefly described and its basic requirements are outlined.

43 PARTICLE ACCELERATORS↗

Hybrid molecular beam epitaxy of germanium-based oxides

Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.

36 MATERIALS SCIENCE↗

High frequency beam oscillation keyhole dynamics in laser melting revealed by in-situ x-ray imaging

The metal additive manufacturing industry is actively developing instruments and strategies to enable higher productivity, optimal build quality, and controllable as-built microstructure. A beam controlling technique, laser oscillation has shown potential in all these aspects in laser welding; however, few attempts have been made to understand the underlying physics of the oscillating keyholes/melt pools which are the prerequisites for these strategies to become a useful tool for laser-based additive manufacturing processes. Here, to address this gap, we utilized a synchrotron-based X-ray operando technique to image the dynamic keyhole oscillation in Ti-6Al-4V using a miniature powder bed fusion setup. We found good agreement between the experimental observations and simulations performed with a validated Lattice Boltzmann multiphysics model. The study revealed the continuous and periodic fluctuations in the characteristic keyhole parameters that are unique to the oscillating laser beam processing and responsible for the chevron pattern formation at solidification. In particular, despite the intrinsic longer-range fluctuation, the oscillating technique displayed potential for reducing keyhole instability, mitigating porosity formation, and altering surface topology. These insights on the oscillating keyhole dynamics can be useful for the future development and application of this technique.

36 MATERIALS SCIENCE↗

Dissociation path competition of radiolysis ionization-induced molecule damage under electron beam illumination

Radiolysis ionization under electron beam illumination induces dissociation and damage of organic and biological molecules; thus, it is impossible to image the related materials by transmission electron microscopy (TEM). To understand the atomistic mechanism of radiolysis damage, we developed a systematical procedure based on real-time time-dependent density functional theory (rt-TDDFT) for simulating the radiolysis damage processes of molecules; this procedure can describe the ionization cross sections of the electronic states and the fast dissociation processes caused by hot carrier cooling and the Auger decay on deep levels. For the radiolysis damage of C 2 H 6 O 2 , our simulation unexpectedly showed that there is strong competition among three different dissociation paths, including fast dissociation caused by nonadiabatic cooling of the hot carrier; fast dissociation caused by Auger decay, which induces double ionization and Coulomb explosion; and slow dissociation caused by increased kinetic energy. As the energy of the incident electron beam changes, the time scales of these dissociation paths and their relative contributions to the molecule damage change significantly. These simulation results explain the measured mass spectra of the C 2 H 6 O 2 dissociation fragments and also provide clear competition mechanisms for blocking these dissociation paths in the TEM imaging of organic and biological materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. Additionally, the pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Directed gas phase preparation of ethynylallene (H 2 CCCHCCH; X 1 A') via the crossed molecular beam reaction of the methylidyne radical (CH; X 2 Π) with vinylacetylene (H 2 CCHCCH; X 1 A')

The gas-phase bimolecular reaction of the methylidyne (CH; X 2 Π) radical with vinylacetylene (H 2 CCHCCH; X 1 A') was conducted at a collision energy of 20.3 kJ mol –1 under single collision conditions exploiting the crossed molecular beam experimental results merged with ab initio electronic structure calculations and ab initio molecular dynamics (AIMD) simulations. The laboratory data reveal that the bimolecular reaction proceeds barrierlessly via indirect scattering dynamics through long-lived C 5 H 5 reaction intermediate(s) ultimately dissociating to C 5 H 4 isomers along with atomic hydrogen with the latter predominantly originating from the vinylacetylene reactant as confirmed by the isotopic substitution experiments in the D1-methylidyne–vinylacetylene reaction. Combined with ab initio calculations of the potential energy surface (PES) and statistical Rice–Ramsperger–Kassel–Marcus (RRKM) calculations, the experimental determined reaction energy of –146 ± 26 kJ mol –1 along with the distribution minimum of T(θ) at 90° and isotopic substitution experiments suggest ethynylallene (p1; ΔrG = –230 ± 4 kJ mol –1 ) as the dominant product. The ethynylallene (p1) may be formed with extensive rovibrational excitation, which would result in a lower maximum translational energy. Further, AIMD simulations reveal that the reaction dynamics leads to p1 (ethynylallene, 75%) plus atomic hydrogen with the dominant initial complex being i1 formed by methylidyne radical addition to the double C[double bond, length as m-dash]C bond in vinylacetylene. Altogether, combining the crossed molecular beam experimental results with ab initio electronic structure calculations and ab initio molecular dynamics (AIMD) simulations, ethynylallene (p1) is expected to represent the dominant product in the reaction of the methylidyne (CH; X 2 Π) radical with vinylacetylene (H 2 CCHCCH; X 1 A').

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design of target irradiation and diagnostic chamber to study ps-laser generated plasma as a source of singly charged ions for external injection into an electron beam ion source

High repetition-rate (~10 kHz) ps-lasers are becoming available on the market with reasonable cost and may offer several advantages compared to ns-lasers by generating nearly continuous beams of singly charged ions appropriate for the “slow” injection mode into the Electron Beam Ion Source (EBIS). To evaluate these advantages, we will perform studies of a ps-laser generated plasma using a laser with a pulse duration of 8 ps and energy up to 5 mJ per pulse. A vacuum chamber equipped with a 3D target positioner, a focusing lens, and a Faraday Cup has been designed and built for this study. Lens-to-target distance variations have been measured using a laser tracker over the whole range of horizontal and vertical translation for all five targets we will use. The variations were found to be within ±150 µm. This level of “target flatness” should be acceptable for our experimental conditions. Ion currents and ion pulse durations of various elements (from Al to Ta) will be measured for different target irradiation conditions (focal spot size and laser pulse energy). The results obtained will allow us to specify all parameters and geometry of a laser ion source based on a ps-laser to provide external ion injection into the relativistic heavy ion collider EBIS

43 PARTICLE ACCELERATORS↗

Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO 3 (111)

Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.

36 MATERIALS SCIENCE↗

Multichannel dynamics in the OH+ n -butane reaction revealed by crossed-beam slice imaging and quasiclassical trajectory calculations

Multidimensional reactions present various channels that can exhibit very different dynamics and give products of varying subsequent reactivity. Here, we present a combination of experiment and theory to reveal the dynamics of hydrogen abstraction by OH radical at primary and secondary sites in n-butane at a collision energy of 8 kcal/mol. Crossed molecular beam slice imaging experiments unequivocally probe the secondary abstraction channel showing backward angular distributions with mild energy release to product translation, which are accurately captured by trajectory calculations using a specific-reaction-parameter Hamiltonian. Additionally, experiments containing both reaction channels indicate a less marked backward character in the angular distribution, whose origin is shown by trajectory calculations to appear as an evolution toward more sideways scattering from the secondary to primary channel. While the two channels have markedly different angular distributions, their energy release is largely comparable, showing ample energy release into the water product. The synergistic combination of crossed-beam imaging and trajectories opens the door to detailed reaction-dynamics studies of chemical reactions with ever-increasing complexity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Scintillator detector characterization for laser-driven proton beam imaging

The spatial resolution and imaging characteristics of plastic scintillators are characterized using laser-driven proton beams. Laser-driven proton beams typically have broad energy spectra and are accompanied by relativistic electrons and high-energy photons, both potentially contributing to background noise. Different types and thicknesses of Eljen Technology scintillators are compared to determine their intrinsic point spread function. Point-projection imaging of a mesh is used to compare the imaging resolution of the scintillator to the usual imaging detector, radiochromic film, and is found to be reasonably comparable and sufficient for many experimental applications.

47 OTHER INSTRUMENTATION↗

Magnetically collimated relativistic charge-neutral electron–positron beams from high-power lasers

In this work, we report the observation of charge-neutral MeV electron-positron beams from magnetically collimated laser-driven pair-production experiments. Relativistic pairs of electrons were generated from laser-solid interactions in an external 13-T mirror field. The pairs were subsequently confined, deflected or collimated depending on the particle energy and field strength, and measured by a magnetic particle spectrometer. Equal quantities of positrons and electrons were measured in the collimated beams with an energy around 13 MeV along the magnetic mirror axis.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

36 MATERIALS SCIENCE↗

Generation of collimated vortex gamma-rays from intense Poincaré beam–plasma interaction

We report on numerical calculations in which a multi-petawatt γ-ray beam is generated using a novel configuration based on fully structured light irradiating an overdense plasma waveguide. We analyze how the relativistic laser pulse efficiently confines and accelerates plasma electrons to GeV-scale energies and drives a quasi-static field that induces magneto-bremsstrahlung radiation. Multiphoton Compton scattering of electrons in the intense part of the laser also occurs although the radiated energy-density is comparatively lower. The emitted γ-rays carry orbital angular momentum, are highly collimated, and account for upwards of 15% of the incident field energy in one particular case. A comparison of the laser-to-particle angular momentum and energy transfer efficiencies is made between the cases of irradiation by a circularly polarized Laguerre–Gauss mode and one type of full Poincaré beam, and it is found that the latter yields an order-of-magnitude enhancement. In conclusion, the essential characteristics of the interaction are validated with three-dimensional particle-in-cell simulations that include quantum electrodynamical effects.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Lagrangian particle simulation of hydrogen pellets and SPI into runaway electron beam in ITER

Numerical studies of the ablation of pellets and shattered pellet injection (SPI) fragments into a runaway electron beam in ITER have been performed using a time-dependent pellet ablation code [Samulyak et al., Nucl. Fusion, 61(4), 046007 (2021)]. The code resolves detailed ablation physics near pellet fragments and large-scale expansion of ablated clouds. The study of a single-fragment ablation quantifies the influence of various factors, in particular, the impact ionization by runaway electrons and cross-field transport models, on the dynamics of ablated plasma and its penetration into the runaway beam. Simulations of SPI performed using different numbers of pellet fragments study the formation and evolution of the ablation clouds and their large-scale dynamics in ITER. In conclusion, the penetration depth of the ablation clouds is found to be of the order of 50 cm.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Excitation of long electrostatic solitary waves in ion beam neutralization process

Unusually long electrostatic solitary waves (ESWs) are discovered in a particle-in-cell simulation study of the process of ion beam neutralization by electron emission from a filament. These ESWs are long because the density perturbation responses to the potential wells created by the ESWs are very small. Notably, the density perturbation is small because the trapped (positive) and untrapped (negative) electron density perturbations nearly compensate each other because of a non-Maxwellian electron velocity distribution in the beam.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Lightwave-driven electron emission for polarity-sensitive terahertz beam profiling

The full exploitation of advanced light sources in the terahertz (THz) frequency range requires versatile experimental tools to fully characterize the spatial, temporal, and spectral shapes of the THz electric field. Several techniques for passive THz beam profiling exist that offer information about the temporally integrated intensity. Thus, any information about the electric field itself is lost. Here, we show that a UV–visible light emission produced via a lightwave-driven field emission from single-layer metasurfaces can be used to visualize the peak electric field distribution of THz beams in real time. Our technique is scalable up to frequencies approaching the plasma frequency of the metal used for the metasurface. Uniquely, our device is sensitive to the absolute polarity of the THz lightwave. These findings demonstrate a general pathway to designing metamaterial-based field-sensitive optical detectors suitable for the entire THz and IR spectral region.

42 ENGINEERING↗

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core–shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core–shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core–shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag–Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. In conclusion, this study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

36 MATERIALS SCIENCE↗

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗