Air-Stable Monolayer Cu 2 Se Exhibits a Purely Thermal Structural Phase Transition
Not provided.
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Not provided.
Broadband near-infrared (NIR) light sources based on phosphor-converted light-emitting diodes are highly desirable for biochemical analysis and medical diagnosis applications. However, thermal quenching remains a demanding challenge for developing efficient NIR phosphors. Herein, we report the enhancement of both quantum efficiency and thermal stability in Cr 3+ -activated K 2 SrP 2 O 7 phosphors through a heterovalent substitution strategy by replacing Sr 2+ with Al 3+ in K 2 Sr 1–x Al x P 2 O 7 (0.05 ≤ x ≤ 0.2) to obtain optimized broadband NIR emission. Structural modulation via Al 3+ substitution leads to the optimized composition, K 2 Sr 0.88 Al 0.1 P 2 O 7 :0.02Cr 3+ , which emits across a broad NIR range of 650–1100 nm peaking at 807 nm with a full width at half-maximum of ∼130 nm under 448 nm excitation. Remarkably, its emission intensity at 150 °C remains 120% of the initial value at room temperature, demonstrating a rare antithermal-quenching behavior. Temperature-dependent XRD studies further reveal that Al 3+ substitution effectively suppresses lattice expansion at elevated temperatures, indicating enhanced lattice stability under thermal excitation. Detailed structural and spectral analyses show that the substitution enhances local site symmetry, reduces electron–phonon coupling, increases thermally induced absorption probability, and fortifies energetic barriers against nonradiative transitions. These synergistic effects collectively endow this NIR phosphor with a superior thermal stability. Furthermore, NIR light-emitting diodes fabricated with this phosphor exhibit strong potential for applications in information identification, nondestructive detection, and night vision technologies. This study demonstrates a local structure engineering strategy for designing thermally robust Cr 3+ -activated NIR phosphors, offering valuable insights into material discovery and NIR spectroscopy device development.
In this study, we present Van Allen Probe observations showing that seed (hundreds of keV) and core ( ≳ 1 MeV) electrons can resonate with ultra-low-frequency (ULF) wave modes with distinctive m values simultaneously. An unusual electron energy spectrogram with double-banded resonant structure was recorded by energetic particle, composition, and thermal plasma (ECT)-magnetic electron ion spectrometer (MagEIS) and, meanwhile, boomerang stripes in pitch angle spectrogram appeared at the lower energy band. A localized drift resonance with m = 10 wave component was responsible for the resonant band peaked at ~200 keV while a global drift resonance with m = 3 component gave rise to the upper band resonance peaked at ~1 MeV. Time-Of-Flight on boomerang stripes suggested that the localized drift resonance with ~200 keV electrons was confined within the plasmaspheric plume. Electron flux modulations were reproduced by numerical simulations in good consistency with the observations, supporting the scenario that localized and global drift resonance could coexist in the outer belt electron dynamics simultaneously.
The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. In conclusion, our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for “h-BN on demand” under a frugal thermal budget.
Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.
This project aimed to identify the performance-limiting mechanisms in mid- to far infrared (IR) sensors by probing photogenerated free carrier dynamics in model detector materials using scanning ultrafast electron microscopy (SUEM). SUEM is a recently developed method based on using ultrafast electron pulses in combination with optical excitations in a pump- probe configuration to examine charge dynamics with high spatial and temporal resolution and without the need for microfabrication. Five material systems were examined using SUEM in this project: polycrystalline lead zirconium titanate (a pyroelectric), polycrystalline vanadium dioxide (a bolometric material), GaAs (near IR), InAs (mid IR), and Si/SiO 2 system as a prototypical system for interface charge dynamics. The report provides detailed results for the Si/SiO 2 and the lead zirconium titanate systems.
The degradation of the internal structure of plutonium (IV) oxalate during calcination was investigated with Transmission Electron Microscopy (TEM), electron diffraction, Electron Energy-Loss Spectroscopy (EELS), and 4D Scanning TEM (STEM). TEM lift-outs were prepared from samples that had been calcined at 300°C, 450°C, 650°C and 950°C. The resulting phase at all calcination temperatures was identified as PuO 2 with electron diffraction. The grain size range was obtained with high-resolution TEM. In addition, 4D STEM images were analyzed to provide grain size distributions. In the 300°C calcined sample, the grains were <10 nm in diameter, at 650°C, the grains ranged from 10 to 20 nm, and by 950°C, the grains were 95–175 nm across. Using the Kolmogorov-Smirnov (K-S) two sample test, it was shown that morphological measurements obtained from 4D-STEM provided statistically significant distributions to distinguish samples at the different calcination conditions. Using STEM-EELS, carbon was shown to be present in the low temperature calcined samples associated with oxalate but had formed carbon (possibly graphite) deposits in the 950°C calcined sample. This work highlights the new methods of STEM-EELS and 4D-STEM for studying the internal structure of special nuclear materials (SNM).
Electronic calorimetric computer calculates nuclear reactor thermal power output to a nominal accuracy of 1 percent. Heat balance is determined by an electronic approach. The thermal power is calculated using the inlet and outlet temperatures and the volume of cooling water and is displayed by a digital readout system.
Using a recently developed technology called thermal-wave microscopy, NASA Lewis Research Center has developed a computer controlled submicron thermal-wave microscope for the purpose of investigating III-V compound semiconductor devices and materials. This paper describes the system's design and configuration and discusses the hardware and software capabilities. Knowledge of the Concurrent 3200 series computers is needed for a complete understanding of the material presented. However, concepts and procedures are of general interest.
Simultaneous observations carried out during the red-arc period of Aug. 8-9, 1970 at Richland, Washington and by the Ogo 6 satellite are examined in the light of the present-day theoretical knowledge. The observed formation of the arc at the electron temperature peak and density trough supports the thermal-conduction theory of red-arc formation. The lack of dc electric fields in the red-arc region rules out these fields as an excitation mechanism. Particle precipitation as a direct source of red-line emission can also be ruled out by the observations presented. The formation of the arc in the plasmapause region and the detection of low-frequency ac fields are consistent with a theory that predicts wave-particle interaction at the plasmapause as a mechanism for supplying thermal energy to the plasmasphere electrons.
The production of plasma waves by a nonthermal beam of high-energy electrons injected into a background thermal plasma was investigated. The coupled kinetic equations for nonthermal electrons were solved, and the level of the plasma waves produced by the bump-on-tail instability arising as a result of the Coulomb collisions of nonthermal electrons with background plasma was estimated. In addition, the radiation signatures of these waves were examined. It is shown that the wave-particle interactions have a significant effect on the overall distribution of the electrons and that it is unlikely that such effects can be discerned in the observed bremsstrahlung or synchrotron radiation of the nonthermal electrons. However, a significant fraction of the energy lost by the beam is transferred to plasma waves and is then dissipated by the thermal plasma.
Inverse Compton scattering of cosmic ray electrons considered in isotropic thermal radiation field with arbitrary energy
The strength retrogression of a Class G cement enriched by adding 60–80% silica cured under the condition of 200 °C and 50 MPa were investigated by multiple different analysis methods. Short-term strength analysis suggests sonic strength testing is a poor indicator of real mechanical strength at such curing condition. Long-term testing up to 142 d shows all designed systems experiences dramatic deterioration in physical and mechanical properties, such as compressive strength, Young's modulus, water permeability and gas permeability. Further testing was conducted using X-ray diffraction, thermal gravimetric analysis, mercury intrusion and scanning electron microscope. The study reveals that the set cement experiences significant microstructure coarsening with increasing curing time, especially after 30 d curing. The strength retrogression and microstructure coarsening seem to be accompanied with the continued consumption of silica, and are likely caused by the gradual conversion of semi-crystalline C-S-H into crystalline tobermorite and xonolite over the long-term curing.
Thermal design of micrometeoroid detector panels and electronics for Pegasus satellite
We have developed a physics-based model based on a pseudo-particle description of the electron cyclotron drift instability. A key improvement of the model with respect to previous work is that linear theory is not applied in the event of wave saturation and deviations of electrons or ions from a Maxwellian distribution function. In the acceleration region, the anomalous collision frequency is computed as the minimum value necessary to prevent the electron drift velocity from exceeding the thermal velocity. A functional based on the electron equilibration time is defined to control the transition from high to low resistivity regions. The model was previously applied to a single Hall thruster at its nominal operating condition, showing promising results that captured accurately the location of the thruster’s acceleration region. In this paper, we extend the use of this firstprinciples models to two additional thrusters, also considering multiple operating conditions for each of them. Numerical results are compared to experimental measurements obtained with non-invasive laser induced fluorescence. In general, the agreement between experiments and simulations is good. The model is able to predict the location of the acceleration region for all cases. We observe however that fine details, such as changes in the plasma potential gradient within the acceleration regions, are not captured. The model is also insensitive to changes in the magnetic field strength while experiments show that small shifts in location (of less than 5% of the acceleration channel length) occur. We plan to address the weaknesses of our method with the help of physical insight gained from kinetic simulations of the acceleration region.
Copper-based chalcogenides have emerged as promising thermoelectric materials due to their high thermoelectric performance, tunable transport properties, earth abundance and low toxicity. We have presented an overview of experimental results and first-principal calculations investigating the thermoelectric properties of various polymorphs of Cu2SnS3 (CTS), Cu2ZnSnS4 (CZTS), and Cu2ZnSnSe4 (CZTSe) synthesized by high-energy reactive mechanical alloying (ball milling). Of particular interest are the disordered polymorphs of these materials, which exhibit phonon-glass–electron-crystal behavior—a decoupling of electron and phonon transport properties. The interplay of cationic disorder and nanostructuring leads to ultra-low thermal conductivities while enhancing electronic transport. These beneficial transport properties are the consequence of a plethora of features, including trap states, anharmonicity, rattling, and conductive surface states, both topologically trivial and non-trivial. Based on experimental results and computational methods, this report aims to elucidate the details of the electronic and lattice transport properties, thereby confirming that the higher thermoelectric (TE) performance of disordered polymorphs is essentially due to their complex crystallographic structures. In addition, we have presented synchrotron X-ray diffraction (SR-XRD) measurements and ab initio molecular dynamics (AIMD) simulations of the root-mean-square displacement (RMSD) in these materials, confirming anharmonicity and bond inhomogeneity for disordered polymorphs.
A hot-electron transition-edge superconducting bolometer with adjustable thermal relaxation speed is proposed. The bolometer contacts are made from a superconductor with high critical temperature which blocks the thermal diffusion of hot carriers into the contacts. Thus electron-phonon interaction is the only mechanism for heat removal. The speed of thermal relaxation for hot electrons in a nanometer-size superconducting bolometer with T(sub c) = 100-300 mK is controlled by the elastic electron mean free path l. The relaxation rate behaves as T(sup 4)l at subkelvin temperatures and can be reduced by a factor of 10-100 by decreasing 1. Then an antenna- or wave guide-coupled bolometer with a time constant approx. = 10(exp -3) to 10(exp -4) s will exhibit photon-noise limited performance at millimeter and submillimeter wavelengths. The bolometer will have a figure-of-merit NEPtau = 10(exp -22) - 10(exp -21) W/Hz at 100 mK which is 10(exp 3) to 10(exp 4) times better (ie: smaller) than that of a state-of-the-art bolometer. A tremendous increase in speed and sensitivity will have a significant impact for observational mapping applications.
Systematic research on the response of crystal materials to the deposition of irradiation energy to electrons and atomic nuclei has attracted considerable attention since it is fundamental to understanding the behavior of various materials in natural and manmade radiation environments. This work examines and compares track formation in LiTaO3 induced by separate and combined effects of electronic excitation and nuclear collision. Under 0.71–6.17 MeV/u ion irradiation with electronic energy loss ranging from 6.0 to 13.8 keV/nm, the track damage morphologies evolve from discontinuous to continuous cylindrical zone. Based on the irradiation energy deposited via electronic energy loss, the subsequently induced energy exchange and temperature evolution processes in electron and lattice subsystems are calculated through the inelastic thermal spike model, demonstrating the formation of track damage and relevant thresholds of lattice energy and temperature. Combined with a disorder accumulation model, the damage accumulation in LiTaO3 produced by nuclear energy loss is also experimentally determined. The damage characterizations and inelastic thermal spike calculations further demonstrate that compared to damage-free LiTaO3, nuclear-collision-damaged LiTaO3 presents a more intense thermal spike response to electronic energy loss owing to the decrease in thermal conductivity and increase in electron–phonon coupling, which further enhance track damage.