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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

bulk lifetime↗
DOE OSTI2018

Mechanism of Optical Charge Exchange of Magnetic Centers in BSO : Fe

High-resistance photosensitive crystals of Bi{sub 12}SiO{sub 20} (BSO) doped with iron ions were studied. X-ray diffraction analysis reveals the compression of a unit cell in a BSO : Fe crystal with increasing impurity concentration. Electron paramagnetic resonance demonstrates a decrease in the intensity of the EPR signal when the BSO: Fe crystal is exposed to light that generates photocarriers. It is found that the characteristic time of the EPR signal decrease is close to the value of the Maxwellian relaxation time measured with the help of the longitudinal electrooptical effect. A physical model of the mechanism of optical charge exchange of magnetic iron centers is discussed, based on the statement that the nature of the crystal bonds of the iron ion with ligands without structural modification of the crystal lattice changes during the photogeneration of carriers. A physical model is proposed, according to which a trivalent Fe{sup 3+} ion transforms into a divalent state of Fe{sup 2+} with a change in the total spin from 5/2 to 2. The compression of the unit cell with increasing iron ion concentration in the framework of the model under discussion is due to the transformation of atomic orbitals upon replacement of silicon ions by iron ions. The transformation process affects the cells unoccupied by iron, which is proved by the absence of a bifurcation of X-ray reflections and indicates the long-range nature of the intracrystalline interactions in sillenites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1984

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗
DOE OSTI2022

Freestanding high-aspect-ratio gold masks for low-energy, phase-based x-ray microscopy

High-resolution, x-ray phase contrast microscopy, a key technique with promising potential in biomedical imaging and diagnostics, is based on narrow-slit high-aspect-ratio gold gratings. Here we present the development, fabrication details, and experimental testing of the freestanding 10 μm thick gold membrane masks with an array of 0.9–1.5 μm void slit apertures for a novel low-energy x-ray microscope. The overall mask size is 4 mm × 4 mm, with a grating pitch of 7.5 μm, 6.0–6.6 μm wide gold bars are supported by 3 μm wide crosslinks at 400 μm intervals. The fabrication process is based on gold electroplating into a silicon mold coated with various thin films to form a voltage barrier, plating base, and sacrificial layer, followed by the mold removal to obtain the freestanding gold membrane with void slit apertures. We discuss key aspects for the materials and processes, including gold structures homogeneity, residual stresses, and prevention of collapsing of the grid elements. We further demonstrate the possibility to obtain high-resolution, high contrast 2D images of biological samples using an incoherent, rotating anode x-ray tube.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Temperature and processing effects on lithium ion conductivity of solution‐deposited lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films

Abstract Lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films have been prepared on platinized silicon substrates via a chemical solution deposition approach with processing temperatures between 700°C and 775°C. Films that were subject to a single high‐temperature anneal were found to crystallize at temperatures above 725°C. Crystallization was observed in films annealed after each deposited layer at 700°C and above. In both cases, grain size was found to increase with annealing temperature. Ion conductivity was found to increase with annealing temperature in singly annealed films. In per‐layer annealed films ion conductivity was found to initially increase then decrease with increasing annealing temperature. A maximum ion conductivity of 1.6 × 10 −6 S/cm was observed for the singly annealed 775°C condition, while a maximum ion conductivity of 5.8 × 10 −7 S/cm was observed for the 725°C per‐layer annealed condition. These results are consistent with an increasing influence of cross‐plane, internal interface resistance and vapor phase carrier loss in the per‐layer annealed samples. This work demonstrates that post‐deposition processing methods can strongly affect the ion conducting properties of LiZr 2 P 3 O 12 thin films.

Brummel, Ian A.↗
NASA NTRS1984

Mechanical proof testing in cell processing

Fracture mechanics test methods are applied to evaluate the proof test characteristics of silicon Cz wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof testing and no subcritical crack growth in silicon is observed during proof loading. Mechanical proof testing appears to be an effective method to eliminate weak samples before cell processing.

Chen, C. P.↗
NASA NTRS2001

Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

Spitsberg, Irene T.↗
NASA NTRS2000

Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

Spitsberg, Irene T.↗
DOE OSTI2026

Machine Learning on Heterogeneous, Edge, and Quantum Hardware for Particle Physics (ML-HEQUPP)

The next generation of particle physics experiments will face a new era of challenges in data acquisition, due to unprecedented data rates and volumes along with extreme environments and operational constraints. Harnessing this data for scientific discovery demands real-time inference and decision-making, intelligent data reduction, and efficient processing architectures beyond current capabilities. Crucial to the success of this experimental paradigm are several emerging technologies, such as artificial intelligence and machine learning (AI/ML) and silicon microelectronics, and the advent of quantum algorithms and processing. Their intersection includes areas of research such as low-power and low-latency devices for edge computing, heterogeneous accelerator systems, reconfigurable hardware, novel codesign and synthesis strategies, readout for cryogenic or high-radiation environments, and analog computing. This white paper presents a community-driven vision to identify and prioritize research and development opportunities in hardware-based ML systems and corresponding physics applications, contributing towards a successful transition to the new data frontier of fundamental science.

Gonski, Julia [SLAC]↗
NASA NTRS2007

Large-Area Permanent-Magnet ECR Plasma Source

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Foster, John E.↗
NASA NTRS1977

Silicon materials task of the low cost solar array project, phase 2

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Hopkins, R. H.↗
NASA NTRS2020

Integrated Silicon Platform for Co-planar Design of Vertically Stacked 2.06 THz Mixer Module

The process for fabricating and utilizing the threedimensional Si stack receiver front-end is described in this paper. The capability to have exact dimensionality becomes essential as frequency scales due to the complexity arising in assembly and finer tolerances. Total process yields can be improved through Si fabrication by verifying achievement of specified tolerances lithographically and compatibility to rapid process changes and design fine-tuning. The integrated Si platform with the mounted device is shown in Figure 1. Signal I/O and alignment modalities enable lownoise measurements. Silicon micromachining provides the necessary accuracy for integration at the several THz regime. Particularly, processing and etch recipes have demonstrated smooth surfaces of < 1 μm surface roughness. In consideration is pre-compensating for minute offsets, matching mechanical strain on all interfaces, and including passive alignment verification in the design. As compared to metal blocks, computer numerical controlled (CNC) milling can produce slight burrs in the interfaces resulting in misalignment and resultant strain between two pieces of components. Furthermore, Si integration can make possible arrays of pixel transceivers through compact subsystems for the purpose of measuring multiple lines of spectral content simultaneously in space.

Mehdi, Imran↗
NASA NTRS1981

Producing silicon continuously

Fluid-bed vaporization followed by chemical vapor deposition generates large, semiconductor-grade silicon particles. Method is economical, high-volume alternative to conventional batch-processing methods. Harvested chunks, extracted in cyclone separator, are about 0.5 to 1.3 centimeters in diameter. Process is not limited to polymer feedstock; it utilizes any halosilane intermediate used in silicon production.

Ingle, W. M.↗
NASA NTRSDate not supplied

Toward High-Endurance Nonvolatile Reconfigurable Metasurfaces

The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space optical communications. The advent of metasurfaces optics with reconfigurability has offered a versatile platform for the design of compact optical components, offering a compelling alternative to their conventional bulky counterparts. In this study, we introduce the PROWESS (Phase change Reconfigurable Optical WavEfront Synthesis System project at NASA LaRC), electrically reconfigurable metasurfaces using low-loss, high-contrast phase change material (PCM), Ge2Sb2Se4Te integrated with IR-transparent silicon microheater for various practical applications. The talk covers a reliable platform for switching large-scale PCM-based devices utilizing a microheater and an architecture for the metasurface switching within an integrated circuit configuration, which is compatible with standard foundry fabrication processes. The utilization of near- to midinfrared transparent silicon microheater in the proposed architecture opens possibilities for the development of reconfigurable transmissive optics such as filters, zoom lenses, and beam steering modules. We demonstrated switching of 140 µm × 140 µm PCM pixel, on a 200 µm × 200 µm silicon microheater for several thousand cycles. Further, we performed an in-depth investigation into the failure mechanism utilizing techniques such as transmission electron microscopy and thermal modeling. Guidelines for device performance improvement are proposed, and an improved design with larger endurance is shown in progress. With further progress, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics with demonstrable examples including a reconfigurable beam steerer for ocean surface flash LiDAR and Navigation Doppler LiDAR for precise lunar landing missions.

metasurface optics↗
NASA NTRS1968

Silicon oxide films grown in microwave discharge

Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.

Kraitchman, J.↗
DOE OSTI2018

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of gamma irradiation on the photoluminescence of porous silicon

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

Kachare, A. H.↗