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Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

36 MATERIALS SCIENCE↗

Screen printing large-area organometal halide perovskite thin films for efficient photodetectors

Highlights: • A stable paste with perovskite precursor was produced out. • Screen printing was proposed to fabricate perovskite thin films. • The perovskite photodetectors with symmetric architectures show reasonable performance with high photocurrent and fast response. - Abstract: Organometal halide perovskites have demonstrated excellent features compared to conventional optoelectronic materials. To date, the perovskite films have generally been fabricated by either spin coating or vapor deposition. However, both methods cannot simultaneously meet large scale and low cost of production. Here, a simple, low-cost and high-throughput strategy was proposed to fabricate perovskite thin films, which were further applied in photodetectors. First, lead compound nanoparticles were synthesized by a solvent precipitation method, then a paste with the lead compound nanoparticles was screen printed to form PbO films involving calcination, and next the PbO films directly reacted with CH{sub 3}NH{sub 3}I solution to convert into CH{sub 3}NH{sub 3}PbI{sub 3} films. The CH{sub 3}NH{sub 3}PbI{sub 3} films consisted of micron crystals, whose sizes can be effectively controlled by adjusting CH{sub 3}NH{sub 3}I concentration. Furthermore, the CH{sub 3}NH{sub 3}PbI{sub 3} films were applied in photodetectors, which showed good performance with high sensitivity and fast response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Annealing induced microstructure engineering of antimony tri-selenide thin films

Highlights: • Deposition of Sb{sub 2}Se{sub 3} thin films using thermal vapour deposition. • Films are deposited on substrates with concurrent heating and without heating. • Effect of post deposition annealing on the two types of films are investigated. • Influence of temperature and processing conditions on optical band gap are probed. • This Sb{sub 2}Se{sub 3} films can find application in solar cells and optoelectronic devices. - Abstract: The presented work demonstrates the effect of annealing on the structural, surface morphology and optical properties of Antimony Triselenide (Sb{sub 2}Se{sub 3}) thin films deposited by thermal evaporation. Two sets of thin films of Sb{sub 2}Se{sub 3} were grown on soda lime glass (SLG) substrates by thermal evaporation with and without substrate heating. Both sets of films were then annealed at three distinct temperatures (100 °C, 200 °C and 300 °C) to study the effects of annealing on the microstructure. Analysis using XRD (X-Ray Diffraction) characterization revealed that the as-deposited films without substrate heating exhibit an amorphous nature, whereas the films grown with concurrent substrate heating are polycrystalline with orthorhombic structure. The films annealed at high temperature with concurrent substrate heating possess smooth and continuous grain morphologies. The effect of annealing was also found to have significant impact on the band gap and optical properties of the Sb{sub 2}Se{sub 3} thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nd3+ Doping effect on the optical and electrical properties of SnO2 thin films prepared by nebulizer spray pyrolysis for opto-electronic application

Highlights: • High quality, Nd:SnO{sub 2} thin films prepared using simple nebulizer spray pyrolysis technique. • Characterizations of the films confirmed good crystallinity and smooth surface morphology. • High optical transparency with low electrical resistivity in nebulizer spray pyrolysis prepared Nd: SnO{sub 2} thin films is presented. - Abstract: Neodymium doped tin oxide (Nd: SnO{sub 2}) thin films were deposited on heated glass substrates with different Nd concentrations (0, 2, 4 and 6 %) by nebulizer spray pyrolysis method. Effects of Nd doping on structural, optical and electrical properties of the prepared films were investigated. X-ray diffraction study confirmed that all the deposited Nd: SnO{sub 2} films are in polycrystalline tetragonal structure with (211) preferential orientation. FESEM images showed that the prepared SnO{sub 2} particles are in nano-size in spherical shape, completely covering the substrate. AFM topology showed smooth deposition of the films with minimum surface roughness. The films showed maximum optical transmittance 90 % in the visible region with a band gap value 3.67 eV, also showed low refractive index and extinction coefficients. Room temperature photoluminescence (PL) spectrum exhibited a strong UV emission peak at 356 nm for all the films. All the Nd: SnO{sub 2} films displayed n-type conductivity with low electrical resistivity 5.88 × 10{sup −4} (Ω cm) for 4 % Nd doping. As the films showed good figure of merit (ϕ) values, these Nd doped SnO{sub 2} thin films can perform better role in optoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors

Highlights: • A dual-wavelength UV photodetector has been constructed with a sandwich structure. • The ratio of the two response peaks can be changed by changing the bias voltage. • The principle was investigated by interpretation of the depletion widths. - Abstract: In this work, dual-wavelength UV photodetectors were successfully constructed by growing ZnO and MgZnO layers on SiO{sub 2} substrates with ZnO/Au/MgZnO structure. The photodetectors exhibited high performance and the influence of different thickness of MgZnO layers was investigated. Moreover, simply by adjusting the applied voltage on the devices, the ratio of the two response peaks (caused by MgZnO and ZnO layers) changed therewith. The detecting properties may originate from the two layers having different increasing rates where the existence of Schottky junctions plays an important role. The photodetectors are meaningful for fabricating dual-wavelength optoelectronic devices for practical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spectroscopic studies of Sm3+ ions doped alkaline-earth chloro borate glasses for visible photonic applications

Highlights: • AECB glasses doped with Sm{sup 3+} ions were synthesized by melt quenching technique. • Bonding parameters reveal bonding nature between Sm-Oxygen as ionic. • Energy transfer leads to shrink in experimental decay times of Sm{sup 3+} ions. • AECB{sub 0}.5Sm glass is apt for designing reddish orange optoelectronic devices. - Abstract: A new series of Sm{sup 3+} ions doped Alkaline-Earth Chloro Borate (AECB) glasses with compositions (25-x)CaO-5SrO-10BaCl{sub 2}-60B{sub 2}O{sub 3}-xSm{sub 2}O{sub 3} (x = 0.1 mol%–2.5 mol%) were prepared by a conventional melt quenching technique and characterized with XRD, absorption, excitation, photoluminescence (PL) and fluorescence decay spectral measurements. From the absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω{sub 2}, Ω{sub 4}, Ω{sub 6}) have been measured. The PL spectra under 402 nm excitation show bright reddish-orange emission at 602 nm. The decay spectral profiles of {sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} (602 nm) luminescence transition used to measure experimental lifetimes (τ{sub R}). The Inokuti-Hirayama model used to understand the predominant energy transfer mechanism involved in the prepared glasses. The evaluated emission cross-sections (σ{sub se}), branching ratios (β{sub R}) and quantum efficiency (η) allows us to contemplate that the Sm{sup 3+} ions doped AECB glasses are aptly suitable as potential gain mediums for visible reddish orange lasers pumped directly by commercially available 405 nm laser diodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Construction of Eu2+ doped H3Sr6(PO4)5·2H2O with novel cruciate multilayer microarchitectures: facile hydrothermal synthesis, growth mechanism, and luminescence properties

Highlights: • H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} phosphors were synthesized via a simple hydrothermal method. • H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} showed novel cruciate multilayer microarchitectures. • Phase and morphology were depended on the optimization of the reaction conditions. • H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} exhibited intense characteristic blue emission of Eu{sup 2+}. - Abstract: A series of monodisperse cruciate multilayer H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} microarchitectures assembled by crossed nanorods have been successfully synthesized via a facile surfactant-assisted hydrothermal route. XRD and FT-IR confirmed the existence of crystalline water in the phosphor. The FE-SEM images revealed that the phase and morphology of resulting samples were strongly depended on the optimization of the reaction conditions, especially the pH value and the molar ratio of citric acid (CA)/Cations. Furthermore, the possible growth mechanism of H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} microarchitectures was proposed in detail. Under near-ultraviolet excitation of 365 nm, the as-obtained H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:0.05Eu{sup 2+} sample exhibited intense wide characteristic blue emission of Eu{sup 2+}, which could be decomposed by Gaussian fitting into two peaks corresponding to different Eu{sup 2+} luminous centers. The present results demonstrated that the morphology-tunable H{sub 3}Sr{sub 6}(PO{sub 4}){sub 5}·2H{sub 2}O:Eu{sup 2+} microarchitecture could be used as a potential candidate for future optoelectronic device applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Improvements in the electroless deposition of Ag nanowires in hot ethylene glycol for resistive touchscreen device

Highlights: • High quality Ag nanowires prepared by an improved electroless deposition process in hot ethylene glycol. • Increase in nanowire length due to the sonication of AgNO{sub 3}/EG solution and salt addition. • Resistive touchscreen device fabrication using Ag nanowire transparent conducting electrodes. - Abstract: We report several approaches to improve the quality of silver (Ag) nanowires synthesized by electroless deposition in hot ethylene glycol (polyol). Ultralong Ag nanowires with lengths up to 50 μm and about 60 nm in mean diameter were prepared using CuCl{sub 2} as stabilizer. Without CuCl{sub 2}, mostly large Ag particles were produced due to oxidative etching of multiply-twinned Ag seeds. Sonication of the AgNO{sub 3}/EG solution prior to injection resulted in longer and thinner nanowires. Without these pretreatments, low aspect ratio Ag nanowires mixed with nanoparticles were produced. The Ag nanowire transparent conducting electrode attained a low sheet resistance of 57.4 Ω/sq and high optical transmittance of 90%. A resistive touch screen device with a microcontroller was fabricated to prove the viability of Ag nanowire electrode for optoelectronic device applications. The Ag nanowire electrodes exhibited a resistive characteristic, which varied depending on the point of contact on the touch screen.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Tunable upconversion emission of Ho3+/Yb3+-doped single β-NaYF4 microrod

Highlights: • An intense red UC emission of Ho{sup 3+} ions was obtained in single NaYF{sub 4} microrod. • The UC emission of Ho{sup 3+} ions can be precisely turned via changing Ce{sup 3+} ion doped concentrations. • The UC mechanism and conversion efficiency were discussed. • The single NaYF{sub 4} microrod will have great potential applications in the laser. - Abstract: In this work, a series of hexagonal phase NaYF{sub 4}: Yb{sup 3+}/Ho{sup 3+} microrods have been successfully synthesized through hydrothermal methods, and their optical properties studied by a confocal microscope equipment with a 980 nm laser. An intense green and red upconversion emissions with candy-like emission pattern are observed from a single NaYF{sub 4}: Yb{sup 3+}/Ho{sup 3+} microrod. As the codoping Ce{sup 3+} ion concentrations increases from 0% to 12% in the microrods, the interesting phenomenon that fluorescence emission of Ho{sup 3+} ion is tuned green to red emission has been obtained. The red-to-green ratio emission of Ho{sup 3+} ions is enhanced about 11-fold, which is due to the two efficient cross-relaxation processes between Ho{sup 3+} and Ce{sup 3+} ions, which leading to the populations increase of the {sup 5}F{sub 5} state. The possible upconversion emission mechanisms are discussed based on the emission spectra of Ho{sup 3+} ions. The current study suggests that the NaYF{sub 4}: Yb{sup 3+}/Ho{sup 3+} microrods with the strong red upconversion emission may have great potential applications in micro-fiber laser, multicolor display, micro-optoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low dimensional metal halide perovskites and hybrids

Organic-inorganic metal halide hybrids are an important class of crystalline materials with exceptional structural and property tunability. Recently metal halide perovskites with ABX 3 structure have been extensively investigated as new generation semiconductors for various optoelectronic devices, including photovoltaic cells, light emitting diodes, photodetectors, and lasers, for their exceptional optical and electronic properties. By controlling the morphological dimensionality, low dimensional metal halide perovskites, including 2D perovskite nanoplatelets, 1D perovskite nanowires, and 0D perovskite quantum dots, have been developed to exhibit distinct properties from their bulk counterparts, due to quantum size effects. Besides ABX 3 perovskites, organic-inorganic metal halide hybrids, containing the same fundamental building block of metal halide octahedra (BX 6 ), can also be assembled to possess other types of crystallographic structures. Using appropriate organic and inorganic components, low dimensional organic-inorganic metal halide hybrids with 2D, quasi-2D, corrugated-2D, 1D, and 0D structures at the molecular level have been developed and studied. Due to the strong quantum confinement and site isolation, these low dimensional metal halide hybrids at the molecular level exhibit remarkable and unique properties that are significantly different from those of ABX 3 perovskites. In light of the rapid development of low dimensional metal halide perovskites and hybrids, it is indeed timely to review the recent progress in these areas. Also, there is a need to clarify the difference between morphological low dimensional metal halide perovskites and molecular level low dimensional metal halide hybrids, as currently the terminologies of low dimensional perovskites are not appropriately used in many cases. Finally, in this review article, we discuss the synthesis, characterization, application, and computational studies of low dimensional metal halide perovskites and hybrids.

36 MATERIALS SCIENCE↗

Halide Vapor Phase Epitaxy of Ge from an Elemental Source

Halide vapor phase epitaxy shows promise for low-cost photovoltaic device manufacturing because of its high growth rates and lower cost elemental precursors but previously has not been used to deposit epitaxial Ge. Here, we demonstrate Ge deposition by generating GeCl 2 in situ from solid Ge and HCl in a N 2 ambient. To achieve Ge growth, we inject AsH 3 and PH 3 as sources of active hydrogen to the growth surface to create a driving force for growth. We do not observe Ge growth unless a supply of hydrogen is added, consistent with thermodynamic calculations. Furthermore, we show the hydrogen source must crack readily on the substrate surface to enable growth; relatively stable sources such as H 2 do not cause growth. Unintentional group V doping is one drawback of using AsH 3 and PH 3 to drive the Ge reaction. We observed As or P concentrations in the Ge films ranging from 4 x 10 17 to 1 x 10 18 atoms/cm 3 , concentrations that can drastically influence device characteristics. However, we note there are numerous other "helper molecule" options that can provide active hydrogen without doping or etching the material. This work provides a path forward for Ge deposition for optoelectronic devices from an elemental source.

14 SOLAR ENERGY↗

The Role of Cation Coordination in the Electrical and Optical Properties of Amorphous Transparent Conducting Oxides

Amorphous oxide semiconductor materials have demonstrated numerous advantages without compromise of electrical properties as compared to their crystalline counterparts, yet understanding of the fundamental principles allowing this has remained elusive. To study the origins of enhanced optoelectronic properties, we apply high-throughput, combinatorial sputtering, structural and spectral mapping, and computationally intensive ab initio molecular dynamics simulations with density functional theory to a ternary, post-transition metal oxide system, namely, zinc tin oxide. The deposited thin films exhibit a high figure of merit, achieving carrier densities in the range of 1019 to 1020 cm–3 and carrier mobilities up to 35 cm2/Vs. These results highlight the role of local distortions and cation coordination in determining the microscopic origins of carrier generation and transport. In particular, we identify the strong likelihood of Sn undercoordination in both Zn-poor and Zn-rich phases leading to the high carrier concentrations observed. This not only diverges from the still widespread historical indictment of oxygen vacancies controlling carrier population in crystalline oxides but also provides a comprehensive framework to describe the unique structure–property relationships using specific structural and electronic descriptors in disordered phase materials.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗

Influence of Annealing and Composition on the Crystal Structure of Mixed-Halide, Ruddlesden–Popper Perovskites

Mixed-halide two-dimensional (2D) hybrid organic–inorganic perovskites offer an important opportunity to control the band gap for applications in optoelectronic devices. In this study, we focus on phenethylammonium lead halide [(PEA) 2 Pb(I 1– x Br x ) 4 ] films, the pure iodide form of which is one of the most widely studied optically active 2D perovskite systems. Resonant infrared, matrix-assisted pulsed laser evaporation is used to grow films to explore the effects of post-growth annealing and mixed-halide composition. The composition, crystal structure, and optical properties are studied for as-grown and annealed films of (PEA) 2 Pb(I 1– x Br x ) 4 for x = 0, 0.25, 0.5, 0.75, and 1. First-principles calculations are used in conjunction with the experimental data to explain the mixed-halide behavior that does not trend monotonically with the bromide content. Important results of this work are as follows: (i) X-ray diffraction reveals evidence for halide phase separation around x = 0.25, consistent with first-principles calculations, whereas no phase separation is observed for x = 0.5 and above and (ii) a unique photoluminescence (PL) peak splitting is observed for x = 0.75, a composition for which no compositional phase separation is observed. The PL splitting is tentatively explained by the coexistence of two distinct types of halide short-range ordering at x = 0.75. Overall, this study demonstrates that mixed-halide n = 1 Ruddlesden–Popper perovskites are not simple random alloys but that instead, they display distinct sites and ordering preferences of the different halide anions. These preferences are critical to understand and rationally tune the properties of the materials.

36 MATERIALS SCIENCE↗

Robust and Highly Conductive Water-Stable Copper Iodide-Based Hybrid Single Crystals

High conductivity, carrier mobility as well as long diffusion length are critical for highly efficient solar cells. Here, we report new types of crystalline inorganic-organic hybrid semiconductors, 2D-Cu 2 I 2 (L) [L = benzo[c][1,2,5]thiadiazole (bs) and benzo[c][1,2,5] selenadiazole (bse)], composed of one-dimensional (1D) copper iodide staircase-like chain and benzodiazole-based ligands. These compounds possess narrow and tunable band gaps and high conductivity. High-quality large single crystals of 2D-Cu 2 I 2 (bse) were grown and used to evaluate the charge transport properties of the material. State-of-the-art time-resolved microwave conductivity (TRMC) techniques were used to investigate the charge carrier dynamics, from which a high conductivity of 2 × 10 -4 S/cm, a carrier mobility of ~1 cm 2 V -1 s -1 , a maximum doping/carrier density of 2 +/- 1 × 10 15 cm -3 , and a diffusion length of ~0.17 um were obtained. We report the excellent water/chemical stability combined with high conductivity makes this I-VII-based hybrid material family promising candidates for potential optoelectronic applications.

36 MATERIALS SCIENCE↗

Employing overlayers to improve the performance of Cu 2 BaSnS 4 thin film based photoelectrochemical water reduction devices

Earth-abundant copper-barium-thiostannate Cu 2 BaSnS 4 (CBTS)-based thin films have recently been reported to exhibit the optoelectronic and defect properties suitable as absorbers for photoelectrochemical (PEC) water splitting and the top cell of tandem photovoltaic solar cells. However, the photocurrents of CBTS-based PEC devices are still much lower than the theoretical value, partially due to ineffective charge collection at CBTS/water interface and instability of CBTS in electrolytes. Here, we report on overcoming these issues by employing overlayer engineering. We find that CdS/ZnO/TiO 2 overlayers can significant-ly improve the PEC performance, achieving saturated cathodic photocurrents up to 7.8 mA cm -2 at the potential of -0.10 V versus reversible hydrogen electrode (RHE) in a neutral electrolyte solution, which is much higher than the best bare CBTS film attaining a photocurrent of 4.8 mA cm -2 at the potential of -0.2 V versus RHE. Finally, our results suggest a viable approach for improving the performance of CBTS-based PEC cells.

08 HYDROGEN↗

Design of Metastable Tin Titanium Nitride Semiconductor Alloys

Here, we report on design of optoelectronic properties in previously unreported metastable tin titanium nitride alloys with spinel crystal structure. Theoretical calculations predict that Ti alloying in metastable Sn 3 N 4 compound should improve hole effective mass by up to 1 order of magnitude, while other optical bandgaps remains in the 1–2 eV range up to x ~ 0.35 Ti composition. Experimental synthesis of these metastable alloys is predicted to be challenging due to high required nitrogen chemical potential (Δμ N ≥ +1.0 eV) but proven to be possible using combinatorial cosputtering from metal targets in the presence of nitrogen plasma. Characterization experiments confirm that thin films of such (Sn 1–x Ti x ) 3 N 4 alloys can be synthesized up to x = 0.45 composition, with suitable optical band gaps (1.5–2.0 eV), moderate electron densities (10 17 to 10 18 cm –3 ), and improved photogenerated hole transport (by 5×). Overall, this study shows that it is possible to design the metastable nitride materials with properties suitable for potential use in solar energy conversion applications.

14 SOLAR ENERGY↗

Halide Perovskites: Is It All about the Interfaces?

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

14 SOLAR ENERGY↗

Lifetime Enhancement of Visible Light Induced Photocharges in Tungsten and Nitrogen in situ Codoped TiO 2 :WN Thin Films

We report on one-step in situ codoped TiO2 thin films synthesized by cosputtering. The purpose of this acceptor-donor passivated codoping approach is to overcome the optoelectronic limitations that arise for monodoped TiO2 in photocatalytic applications. To evaluate these added benefits, the TiO2:WN thin films were characterized by different techniques. X-ray diffraction patterns and X-ray photoelectron spectral analysis revealed that both N and W dopants are mostly present in the desired substitutional locations. Additionally, the codoping approach was found to reduce the internal strain and defect density of the TiO2:WN films as compared to their monodoped TiO2:N counterparts. This defect reduction is confirmed via photocharge lifetime variation obtained using visible light flash photolysis time-resolved microwave conductivity measurements (FP-TRMC). Photocharge lifetime analysis indicated the presence of three distinct decay processes: charge trapping, recombination, and surface reactions. These characteristic lifetimes of the codoped TiO2:WN films (i.e., 0.08, 0.75, and 11.5 us, respectively) were found to be about double those of their nitrogen monodoped TiO2:N counterparts (i.e., 0.03, 0.35, and 6.8 us), quantitatively confirming the effective passivating outcome of the tungsten-nitrogen codoping approach developed here. The practicality of this method was confirmed by integrating the TiO2:WN films as photoanodes for the electro-photocatalytic, solar light driven degradation of a real pollutant (i.e., atrazine). A significant increase in the degradation kinetics, leading to a 4-fold increase in the pseudo-first-order degradation constant for the optimally doped TiO2:WN photoanodes (0.106 min-1) from the undoped TiO2-x ones (0.026 min-1), is a direct consequence of the increased photocharge lifetimes in tandem with visible light photosensitivity.

14 SOLAR ENERGY↗