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At least 1,153 records · Page 64

All sources NASA NTRS DOE OSTI

NASA NTRS2011

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. The investigation we report here extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional changes in the work output of the material, which has a stress-free austenite finish temperature of 113 C, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted on the aforementioned alloy at various stresses from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 C. The data indicated that the amount of applied stress influenced the transformation strain, as would be expected. However, the maximum temperature reached during the thermal excursion also plays an equally significant role in determining the transformation strain, with the maximum transformation strain observed during thermal cycling to 290 C. In situ neutron diffraction at stress and temperature showed that the differences in transformation strain were mostly related to changes in martensite texture when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗

NASA NTRS1994

Perceptual Repetition Blindness Effects

The phenomenon of repetition blindness (RB) may reveal a new limitation on human perceptual processing. Recently, however, researchers have attributed RB to post-perceptual processes such as memory retrieval and/or reporting biases. The standard rapid serial visual presentation (RSVP) paradigm used in most RB studies is, indeed, open to such objections. Here we investigate RB using a "single-frame" paradigm introduced by Johnston and Hale (1984) in which memory demands are minimal. Subjects made only a single judgement about whether one masked target word was the same or different than a post-target probe. Confidence ratings permitted use of signal detection methods to assess sensitivity and bias effects. In the critical condition for RB a precue of the post-target word was provided prior to the target stimulus (identity precue), so that the required judgement amounted to whether the target did or did not repeat the precue word. In control treatments, the precue was either an unrelated word or a dummy.

Hochhaus, Larry↗

NASA NTRS1990

Multiprocessor architecture: Synthesis and evaluation

Multiprocessor computed architecture evaluation for structural computations is the focus of the research effort described. Results obtained are expected to lead to more efficient use of existing architectures and to suggest designs for new, application specific, architectures. The brief descriptions given outline a number of related efforts directed toward this purpose. The difficulty is analyzing an existing architecture or in designing a new computer architecture lies in the fact that the performance of a particular architecture, within the context of a given application, is determined by a number of factors. These include, but are not limited to, the efficiency of the computation algorithm, the programming language and support environment, the quality of the program written in the programming language, the multiplicity of the processing elements, the characteristics of the individual processing elements, the interconnection network connecting processors and non-local memories, and the shared memory organization covering the spectrum from no shared memory (all local memory) to one global access memory. These performance determiners may be loosely classified as being software or hardware related. This distinction is not clear or even appropriate in many cases. The effect of the choice of algorithm is ignored by assuming that the algorithm is specified as given. Effort directed toward the removal of the effect of the programming language and program resulted in the design of a high-level parallel programming language. Two characteristics of the fundamental structure of the architecture (memory organization and interconnection network) are examined.

Standley, Hilda M.↗

DOE OSTI2022

Optical control of topological memory based on orbital magnetization

Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field.

Science & Technology - Other Topics↗

DOE OSTI2023

Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution and emergence of stochastic non-idealities. While prior work has mainly focused on binary transitions, in this work, we leverage the stochastic switching of a three-state ferroelectric field-effect transistor to implement a long-term and short-term two-tier stochastic synaptic memory with a single device. Experimental measurements are performed on a scaled 28 nm high-k metal gate technology-based device to develop a probabilistic model of the hybrid stochastic synapse. In addition to the advantage of ultra-low programming energies afforded by scaling, our hardware–algorithm co-design analysis reveals the efficacy of the two-tier memory in comparison to binary stochastic synapses in on-chip learning tasks—paving the way for algorithms exploiting multi-state devices with probabilistic transitions beyond deterministic ones.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Case Study: Field Evaluation of a Low-Cost Circuit-Level Electrical Submetering System

Circuit-level metering technologies provide the ability to monitor individual circuits within an electrical panel in a building, providing detailed power and energy consumption data at a much more granular level than was previously achievable in a cost-effective manner. While the fundamental hardware components of circuit-level—split-core current transformers (CTs) and power monitoring meters—have existed for some time, the new offerings in the market have tightly integrated these components, lower costs, and have streamlined data organization, transport, and access via software solutions accessible through web and application programming interfaces (API). NREL evaluated Meazon’s single-circuit metering system. The evaluation of the equipment under test (EUT) focused on three aspects: (1) accuracy of the data provided by the system, (2) ease of installation of this technology and ease of data integration into existing U.S. General Services Administration (GSA) analytics platforms, and (3) total cost of ownership and cost-effectiveness of the technology. The metering technology was tested in a field deployment where it was installed in low and high-voltage commercial electrical panels in the César E. Chávez Memorial Building in Denver, Colorado. The goals were to assess the metering accuracy, the ease of installation and data retrieval, and the total cost of ownership and cost-effectiveness. This technology proved easy to install by a certified electrician who completed the install of 6 meters in 2 separate panels (120/208 V and 277/480 V) and 2 circuit disconnects (along with associated commissioning) at the César E. Chávez Memorial Building in less than one day. The technology was installed in high- and low-voltage panels and with limited space in the electrical room, demonstrating the applicability of this technology to almost all commercial buildings in the GSA portfolio. Primary considerations for this technology include appropriate sizing of CTs for each circuit, selection of loads/circuits/panels that are of high value for detailed submetering (e.g., tailored for high-load devices), and how GSA would like to integrate these data with its existing energy management infrastructure. Through the field evaluation, we demonstrated data integration from the vendor system into the primary software component on the GSA enterprise-level energy management and information system, GSA Link. Data from the circuit-level metering were integrated into this platform and used to perform FDD. This demonstrated the ability of the EUT to augment existing energy management and information systems in buildings where GSA Link is deployed and provides a pathway for delivering FDD at other buildings throughout the portfolio.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

DOE OSTI2017

Optimizing the Four-Index Integral Transform Using Data Movement Lower Bounds Analysis

The four-index integral transform is a fundamental and computationally demanding calculation used in many computational chemistry suites such as NWChem. It transforms a four-dimensional tensor from an atomic basis to a molecular basis. This transformation is most efficiently implemented as a sequence of four tensor contractions that each contract a four-dimensional tensor with a two-dimensional transformation matrix. Differing degrees of permutation symmetry in the intermediate and final tensors in the sequence of contractions cause intermediate tensors to be much larger than the final tensor and limit the number of electronic states in the modeled systems. Loop fusion, in conjunction with tiling, can be very effective in reducing the total space requirement, as well as data movement. However, the large number of possible choices for loop fusion and tiling, and data/computation distribution across a parallel system, make it challenging to develop an optimized parallel implementation for the four-index integral transform. We develop a novel approach to address this problem, using lower bounds modeling of data movement complexity. We establish relationships between available aggregate physical memory in a parallel computer system and ineffective fusion configurations, enabling their pruning and consequent identification of effective choices and a characterization of optimality criteria. This work has resulted in the development of a significantly improved implementation of the four-index transform that enables higher performance and the ability to model larger electronic systems than the current implementation in the NWChem quantum chemistry software suite.

Rajbhandari, Samyam↗

NASA NTRS1991

Parallel computation of aerodynamic influence coefficients for aeroelastic analysis on a transputer network

Aeroelastic analysis is mult-disciplinary and computationally expensive. Hence, it can greatly benefit from parallel processing. As part of an effort to develop an aeroelastic analysis capability on a distributed-memory transputer network, a parallel algorithm for the computation of aerodynamic influence coefficients is implemented on a network of 32 transputers. The aerodynamic influence coefficients are calculated using a three-dimensional unsteady aerodynamic model and a panel discretization. Efficiencies up to 85 percent are demonstrated using 32 processors. The effects of subtask ordering, problem size and network topology are presented. A comparison to results on a shared-memory computer indicates that higher speedup is achieved on the distributed-memory system.

Janetzke, D. C.↗

DOE OSTI2015

Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Ultra-low latency recurrent neural network inference on FPGAs for physics applications with hls4ml

Abstract Recurrent neural networks have been shown to be effective architectures for many tasks in high energy physics, and thus have been widely adopted. Their use in low-latency environments has, however, been limited as a result of the difficulties of implementing recurrent architectures on field-programmable gate arrays (FPGAs). In this paper we present an implementation of two types of recurrent neural network layers—long short-term memory and gated recurrent unit—within the hls4ml framework. We demonstrate that our implementation is capable of producing effective designs for both small and large models, and can be customized to meet specific design requirements for inference latencies and FPGA resources. We show the performance and synthesized designs for multiple neural networks, many of which are trained specifically for jet identification tasks at the CERN Large Hadron Collider.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1995

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗

NASA NTRS1987

Rare-earth substitution in (BiYCa)3(FeSiGe)5O12 bubble films

The substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy (GIA). The presently accepted film composition intended for 6-or 8-micron-period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions, it is observed that YGdHoBilG films posess less (GIA) than their Gd, Ho-free counterparts. Thus, to satisfy (GIA) requirements, the supercooling during growth must be increased by 20 K to 80 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-micron-period memory devices. It can be grown with only 45-50 K supercooling.

Luther, L. C.↗

DOE OSTI2021

Effective field theory of stochastic diffusion from gravity

Planar black holes in AdS have long-lived quasinormal modes which capture the physics of charge and momentum diffusion in the dual field theory. How should we characterize the effective dynamics of a probe system coupled to the conserved currents of the dual field theory? Specifically, how would such a probe record the long-lived memory of the black hole and its Hawking fluctuations? We address this question by exhibiting a universal gauge invariant framework which captures the physics of stochastic diffusion in holography: a designer scalar with a gravitational coupling governed by a single parameter, the Markovianity index. We argue that the physics of gauge and gravitational perturbations of a planar Schwarzschild-AdS black hole can be efficiently captured by such designer scalars. We demonstrate that this framework allows one to decouple, at the quadratic order, the long-lived quasinormal and Hawking modes from the short-lived ones. It furthermore provides a template for analyzing fluctuating open quantum field theories with memory. In particular, we use this set-up to analyze the diffusive Hawking photons and gravitons about a planar Schwarzschild-AdS black hole and derive the quadratic effective action that governs fluctuating hydrodynamics of the dual CFT. Along the way we also derive results relevant for probes of hyperscaling violating backgrounds at finite temperature.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2020

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. Our results motivate further research in the understanding and applications of defects in 2D materials.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Thermally generated magnonic spin currents in a polycrystalline gadolinium iron garnet thin film with perpendicular magnetic anisotropy

Rare-earth iron garnets (REIGs) are the benchmark systems for magnonics, including the longitudinal spin Seebeck effect (LSSE). While most research has focused on single-crystalline REIGs on complimentary garnet substrates, moving to more, cost-effective complementary metal-oxide semiconductor (CMOS)-compatible substrates is important to integrate REIG thin films with existing technology. In this regard, we grow a 130 nm-thick polycrystalline gadolinium iron garnet (GdIG) film on the Si/SiO2 substrate and investigate the temperature-dependent LSSE. Interestingly, the polycrystalline GdIG film exhibits perpendicular magnetic anisotropy (PMA) at room temperature which is induced by tensile in-plane (IP)-strain originating from the thermal-expansion mismatch between the GdIG film and the substrate during rapid thermal annealing. Further, a spin-reorientation transition from the out-of-plane IP direction below TS = 180 K is observed. Additionally, the film reveals a magnetic compensation temperature, TComp, of ≈240 K. The LSSE voltage not only demonstrates a sign-inversion around TComp, but also shows noticeable changes around TS. As compared to a single-crystalline GdIG film, the lower LSSE voltage for the polycrystalline GdIG is attributed to the higher effective magnetic anisotropy and enhanced magnon scattering at the grain boundaries. Our study not only paves the way for the cost-effective growth of CMOS-compatible REIG-based systems with PMA for magnonic memory and information processing applications, but also highlights the fact that the spincaloritronic and spin-insulatronic properties of the polycrystalline REIGs follow those of their single-crystalline counterparts with reduced spin-to-charge conversion efficiency through LSSE which can be tuned further by controlling the average gran size and interface engineering.

Physics↗

DOE OSTI2015

GAP CLEARING BY PLANETS IN A COLLISIONAL DEBRIS DISK

We apply our 3D debris disk model, SMACK, to simulate a planet on a circular orbit near a ring of planetesimals that are experiencing destructive collisions. Previous simulations of a planet opening a gap in a collisionless debris disk have found that the width of the gap scales as the planet mass to the 2/7th power (α = 2/7). We find that gap sizes in a collisional disk still obey a power law scaling with planet mass, but that the index α of the power law depends on the age of the system t relative to the collisional timescale t {sub coll} of the disk by α = 0.32(t/t {sub coll}){sup –0.04}, with inferred planet masses up to five times smaller than those predicted by the classical gap law. The increased gap sizes likely stem from the interaction between collisions and the mean motion resonances near the chaotic zone. We investigate the effects of the initial eccentricity distribution of the disk particles and find a negligible effect on the gap size at Jovian planet masses, since collisions tend to erase memory of the initial particle eccentricity distributions. Finally, we find that the presence of Trojan analogs is a potentially powerful diagnostic of planets in the mass range ∼1-10 M {sub Jup}. We apply our model to place new upper limits on planets around Fomalhaut, HR 4796 A, HD 202628, HD 181327, and β Pictoris.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2015

Characterization of Proxy Application Performance on Advanced Architectures. UMT2013, MCB, AMG2013

Three codes were tested at LLNL as part of a Tri-Lab effort to make detailed assessments of several proxy applications on various advanced architectures, with the eventual goal of extending these assessments to codes of programmatic interest running more realistic simulations. Teams from Sandia and Los Alamos tested proxy apps of their own. The focus in this report is on the LLNL codes UMT2013, MCB, and AMG2013. We present weak and strong MPI scaling results and studies of OpenMP efficiency on a large BG/Q system at LLNL, with comparison against similar tests on an Intel Sandy Bridge TLCC2 system. The hardware counters on BG/Q provide detailed information on many aspects of on-node performance, while information from the mpiP tool gives insight into the reasons for the differing scaling behavior on these two different architectures. Results from three more speculative tests are also included: one that exploits NVRAM as extended memory, one that studies performance under a power bound, and one that illustrates the effects of changing the torus network mapping on BG/Q.

97 MATHEMATICS AND COMPUTING↗