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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Note: A scanning electron microscope sample holder for bidirectional characterization of atomic force microscope probe tips

A novel sample holder that enables atomic force microscopy (AFM) tips to be mounted inside a scanning electron microscopy (SEM) for the purpose of characterizing the AFM tips is described. The holder provides quick and easy handling of tips by using a spring clip to hold them in place. The holder can accommodate two tips simultaneously in two perpendicular orientations, allowing both top and side view imaging of the tips by the SEM.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Thickness-Dependent Defect Structure of Epitaxial Silicon Thin Films Deposited by Hot-Wire Chemical Vapor Deposition

In this work, we study the defect structure of epitaxial film silicon grown by hot-wire chemical vapor deposition (HWCVD) on Si wafers, as a function of film thickness. We used scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) to investigate the distribution, type, and composition of the defects. To investigate the crystallographic structure, we used electron backscattering diffraction (EBSD) on the surface and cross sections of the samples. We observed that, as desired, the films grew epitaxially, and that there was an increase in the density of defects as the film thickness increased. One of the most dominant types of defects grows as long columns, reaching many micrometers in diameter at the surface. EBSD showed that these defects were composed of randomly oriented polycrystalline-silicon grains. To study the electrical nature of the film and defects, we used conductive atomic force microscopy (C-AFM), which provides information on film conductivity with high-spatial resolution. C-AFM showed that the columnar defects have much lower conductivity than the surrounding Si thin film. In this work, we show how the concentration and distribution of the defects change as the film thickness increases, and investigate their electrical properties. Finally, we discuss how the defect structure might impact solar cells made with this material.

14 SOLAR ENERGY↗
DOE OSTI2014

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Influence of UV and visible laser light on the structure and composition of layered organic - inorganic zinc and copper nanocomposites

The effect of UV and visible laser light on the structure and composition of layered organic-inorganic nanocomposites of transition metals, zinc [zinc hydroxide/dodecyl sulfate, Zn(OH){sub 2}DS] and copper [copper hydroxide/dodecyl sulfate, Cu{sub 2}(OH){sub 3}DS], has been experimentally investigated. Nanocomposites have been synthesised by laser ablation of targets from the aforementioned materials in aqueous solutions of a surfactant: sodium dodecyl sulfate (SDS). The absorption and Raman spectra of the thus obtained colloids are analysed. The structural composition and morphology of the solid phase isolated from the colloids are determined using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. It is shown that exposure of nanocomposites to UV and visible laser light with intensities in the range of 5 Multiplication-Sign 10{sup 5}-10{sup 7} W cm{sup -2} or higher leads to their fragmentation and change in their composition. (optical nanostructures)

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10{sup −5} Ω-cm{sup 2}. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Epi-cleaning of Ge/GeSn heterostructures

We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Reliability Implications of Solder in Multiwire Modules under Dynamic Mechanical Loading: Preprint

Two generations of multiwire modules were studied under dynamic mechanical loading (DML). The earlier generation module was found to use an In-based solder alloy, and the current generation a Bi-based alloy. The earlier generation module degraded significantly under DML with increasing resistance, while the state-of-the-art module did not demonstrate degradation under DML. The degradation in the earlier module was attributed to damage at the solder-gridline interfaces. Atomic force microscopy scratch testing estimated the wear resistance of each solder alloy to assess susceptibility to degradation. Bi-based alloys appear to be more wear resistant than In-based alloys, consistent with the DML results. These results indicate that current multiwire designs may have higher mechanical durability than earlier generations.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2014

An AFM-based pit-measuring method for indirect measurements of cell-surface membrane vesicles

Highlights: • Air drying induced the transformation of cell-surface membrane vesicles into pits. • An AFM-based pit-measuring method was developed to measure cell-surface vesicles. • Our method detected at least two populations of cell-surface membrane vesicles. - Abstract: Circulating membrane vesicles, which are shed from many cell types, have multiple functions and have been correlated with many diseases. Although circulating membrane vesicles have been extensively characterized, the status of cell-surface membrane vesicles prior to their release is less understood due to the lack of effective measurement methods. Recently, as a powerful, micro- or nano-scale imaging tool, atomic force microscopy (AFM) has been applied in measuring circulating membrane vesicles. However, it seems very difficult for AFM to directly image/identify and measure cell-bound membrane vesicles due to the similarity of surface morphology between membrane vesicles and cell surfaces. Therefore, until now no AFM studies on cell-surface membrane vesicles have been reported. In this study, we found that air drying can induce the transformation of most cell-surface membrane vesicles into pits that are more readily detectable by AFM. Based on this, we developed an AFM-based pit-measuring method and, for the first time, used AFM to indirectly measure cell-surface membrane vesicles on cultured endothelial cells. Using this approach, we observed and quantitatively measured at least two populations of cell-surface membrane vesicles, a nanoscale population (<500 nm in diameter peaking at ∼250 nm) and a microscale population (from 500 nm to ∼2 μm peaking at ∼0.8 μm), whereas confocal microscopy only detected the microscale population. The AFM-based pit-measuring method is potentially useful for studying cell-surface membrane vesicles and for investigating the mechanisms of membrane vesicle formation/release.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nano-machining, surface analysis and emittance measurements of a copper photocathode at SPARC_LAB

R&D activity on Cu photocathodes is under development at the SPARC_LAB test facility to fully characterize each stage of the photocathode “life” and to have a complete overview of the photoemission properties in high brightness photo-injectors. The nano(n)-machining process presented here consists in diamond milling, and blowing with dry nitrogen. This procedure reduces the roughness of the cathode surface and prevents surface contamination introduced by other techniques, such as polishing with diamond paste or the machining with oil. Both high roughness and surface contamination cause an increase of intrinsic emittance and consequently a reduction of the overall electron beam brightness. To quantify these effects, we have characterized the photocathode surface in terms of roughness measurement, and morphology and chemical composition analysis by means of Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscopy (AFM) techniques. The effects of n-machining on the electron beam quality have been also investigated through emittance measurements before and after the surface processing technique. Finally, we present preliminary emittance studies of yttrium thin film on Cu photocathodes.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALD Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.

Mamun, M.A.↗
DOE OSTI2025

Graphene-driven correlated electronic states in one dimensional defects within WS2

Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of one-dimensional defects hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation within defectively engineered WS2 atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by one-dimensional metal (1DM) defects. It appears that the vertical heterostructure with graphene and the induced charge transfer from graphene into the 1DM is critical for the formation of a TLL.

Rossi, Antonio↗
DOE OSTI2020

Carbon nanotube porin diffusion in mixed composition supported lipid bilayers

Carbon nanotube porins (CNTPs), short pieces of carbon nanotubes capable of self-inserting into a lipid bilayer, represent a simplified model of biological membrane channels. We have used high-speed atomic force microscopy (HS-AFM) and all-atom molecular dynamics (MD) simulations to study the behavior of CNTPs in a mixed lipid membrane consisting of DOPC lipid with a variable percentage of DMPC lipid added to it. HS-AFM data reveal that the CNTPs undergo diffusive motion in the bilayer plane. Motion trajectories extracted from the HS-AFM movies indicate that CNTPs exhibit diffusion coefficient values broadly similar to values reported for membrane proteins in supported lipid bilayers. The data also indicate that increasing the percentage of DMPC leads to a marked slowing of CNTP diffusion. MD simulations reveal a CNTP-lipid assembly that diffuses in the membrane and show trends that are consistent with the experimental observations.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

Ultraviolet and infrared femtosecond laser induced periodic surface structures on thin polymer films

This work demonstrates the formation of femtosecond laser induced periodic surface structures (LIPSS) by multipulse irradiation with the fundamental and 3rd harmonic of a linearly polarized Ti:sapphire laser (795 and 265 nm) on thin films of the polymers poly (ethylene terephthalate), poly (trimethylene terephthalate), and poly (carbonate bisphenol A) prepared by spin-coating. LIPSS, inspected by atomic force microscopy, are formed upon multiple pulse UV and IR irradiation with wavelength-sized period in a narrow range of fluences below the ablation threshold. Control and tunability of the size and morphology of the periodic structures become thus possible ensuring photochemical integrity of polymer films.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

We demonstrate the capability of growing high quality ultrathin (10 or fewer quintuple layers) films of the topological insulators Bi{sub 2}Se{sub 3} and Bi{sub 2}Te{sub 3} using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy, which is a direct probe of bandstructure, and ex-situ atomic force microscopy. We find that the conduction band lies above the Fermi energy, indicating bulk insulating behavior with only the surface states crossing the Fermi energy. The use of a thermal cracker allows for more stoichiometric flux rates during growth, while still creating intrinsically doped films, paving the way for future improvements in growth of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhanced triboelectrification of the polydimethylsiloxane surface by ultraviolet irradiation

Study of the triboelectric charging effect has recently gained much attraction by proposing a new potential technical application in the field of energy harvesting. Transparent polydimethylsiloxane (PDMS) has some advantages in employing the triboelectric effect due to good conformity at nanometer scale and the simple fabrication process. In this study, we demonstrate that UV irradiation can enhance the performance of a PDMS-based nanotribogenerator. Contact atomic force microscopy combined with Kelvin probe force microscopy enables an in-depth investigation of the effect of UV illumination on local triboelectric charge generation and its decay in PDMS. We found that UV exposure not only facilitates triboelectric charge generation but also enhances charge redistribution, which is related to the wettability of the PDMS surface. This study provides insights into the fundamental understanding and design of triboelectric generator devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Optical emission characteristics of medium- to high-pressure N{sub 2} dielectric barrier discharge plasmas during surface modification of polymers

The authors measured the band spectra (first and second positive systems) of the nitrogen molecule by optical emission spectroscopy with an aim to understand the mechanism of surface processing by medium- to high-pressure dielectric barrier discharge (DBD) plasmas. The experimentally measured and calculated spectra were compared to determine the vibrational and rotational temperatures of the N{sub 2} (C{sup 3}{Pi}{sub u}) state in the generated plasmas. The authors generated the N{sub 2} DBD plasmas at a driving frequency of 1-7 kHz and a discharge pressure of 20-10{sup 5} Pa for the surface modification of a polyethylene terephthalate (PET) sample. It was found that the vibrational temperature was greatly affected by the N{sub 2} pressure while the rotational temperature remained constant in the N{sub 2} pressure range of 20-10{sup 5} Pa. The emission intensity of N{sub 2} first positive system (B{sup 3}{Pi}{yields}A{sup 3}{Sigma}) rapidly decreased at an increasing N{sub 2} pressure due to the collisional relaxation process of the B{sup 3}{Pi} state with N{sub 2} molecules. The N{sub 2}{sup +}(B{sup 2}{Sigma}{sub u}{sup +}{yields}X{sup 2}{Sigma}{sub g}{sup +}) radiative transition was observed in the low-pressure DBD plasmas, which was attributed to the direct electron impact ionization of N{sub 2} molecules. The surface characterizations of treated PET samples by contact angle measurement and atomic force microscopy indicate that the low-pressure N{sub 2} DBD plasma is an effective method for the surface modification of polymers. Analysis indicates the plasma characteristics such as electron temperature and ion energy are mainly dependent on the N{sub 2} pressure, which turn to determine the surface properties of treated PET samples.

36 MATERIALS SCIENCE↗