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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Photosynthesis of CO from CO 2 with an iron polypyridyl catalyst at a passivated silicon photoelectrode

A first-row transition metal catalyst, [Fe(tpy)(Mebim-py)(NCCH 3 )] 2+ (tpy = 2,2′:6′,2′′-terpyridine, Mebim-py = 1-methylbenzimidazol-2-ylidene-3-(2′-pyridine)) mediates CO 2 reduction to CO at passivated p-Si photoelectrodes with applied potentials 240 mV positive of the standard CO 2 /CO reduction potential. The molecular catalyst's selectivity for CO was retained under photoelectrochemical conditions, with negligible direct proton reduction promoted by the photoelectrode. The faradaic efficiency for CO (44 ± 6%) was slightly enhanced relative to the catalyst performance in the dark (33%). A photosynthetic cell based on this photocathode system, coupled with ferrocene oxidation at the anode, successfully operated at a cell voltage of −1.2 V. The photovoltage generated by illumination of p-Si–CH 3 met and surpassed the potential required for CO 2 reduction when coupled with ferrocene oxidation. By leveraging a low-overpotential CO 2 reduction electrocatalyst, a photo-assisted electrochemical efficiency of 0.15% and applied bias photon-to-current efficiency of 0.05% was achieved for this single-junction cell, ultimately storing 46 kJ mol −1 (11 kcal mol −1 ) of photon energy.

Carbon Dioxide Reduction↗
DOE OSTI2026

Functional silicon crosslinks in conjugated polymer networks

The first conjugated polymers with functional Si–Si crosslinks are reported. In addition to complete structural characterization using solid-state NMR techniques, the electronic structure of the polymers are supported by electrochemical studies.

Wentz, Kelsie E. [Department of Chemistry, Johns H↗
DOE OSTI2026

Semi-Dynamic Leach Testing of Densified Silicon-based Iodine Waste Forms

Iodine waste forms (IWF) require a conceptual corrosion release model (CCRM) to provide iodine (I) release rates for performance modeling nuclear waste disposal repositories. To develop a CCRM, an understanding of the corrosion mechanisms of the IWF are required along with data from consistent test methods to parameterize the model. The present study has advanced both areas by providing and assessing the corrosion resistance of IWF types based on their processing history in minor variations of semi-dynamic leach tests. The test included a series of semi-dynamic leach tests using monolithic IWFs in deionized water (leachant). Several experiments were conducted under alternate test conditions with changes to temperature, leachant replacement, leachant pH, leachant volume, masking, and surface finish to elucidate if varying these conditions impacted IWF corrosion behavior. Tests were conducted on two classes of IWFs: (1) I-bearing silver-mordenite (AgZ) materials processed by hot isostatic pressing (HIP) at different temperatures, pressures, sizes, and times; and (2) I-bearing silver-functionalized silica aerogels (SFA) processed by either HIP or spark plasma sintering (SPS). The corrosion susceptibility of AgZ samples was influenced by HIP temperature and pressure. The SPS SFAs retained I far better than HIP SFAs. Additional findings in this study include: (1) The iodine dissolution rate decreased with decreasing temperature, (2) a common ion effect may occur and slow dissolution of the host phase if the leachant is not regularly replaced, (3) pH controls the dissolution rate, and (4) the iodine dissolution rate slows with extended test time (up to 224 days). Based on this work, these parameters should thus be represented when developing a CCRM.

corrosion↗
DOE OSTI2020

Re-examining the silicon self-interstitial charge states and defect levels: A density functional theory and bounds analysis study

The self-interstitial atom (SIA) is one of two fundamental point defects in bulk Si. Isolated Si SIAs are extremely difficult to observe experimentally. Even at very low temperatures, they anneal before typical experiments can be performed. Given the challenges associated with experimental characterization, accurate theoretical calculations provide valuable information necessary to elucidate the properties of these defects. Previous studies have applied Kohn–Sham density functional theory (DFT) to the Si SIA, using either the local density approximation or the generalized gradient approximation to the exchange-correlation (XC) energy. The consensus of these studies indicates that a Si SIA may exist in five charge states ranging from -2 to +2 with the defect structure being dependent on the charge state. This study aims to re-examine the existence of these charge states in light of recently derived “approximate bounds” on the defect levels obtained from finite-size supercell calculations and new DFT calculations using both semi-local and hybrid XC approximations. We conclude that only the neutral and +2 charge states are directly supported by DFT as localized charge states of the Si SIA. Within the current accuracy of DFT, our results indicate that the +1 charge state likely consists of an electron in a conduction-band-like state that is coulombically bound to a +2 SIA. Furthermore, the -1 and -2 charge states likely consist of a neutral SIA with one and two additional electrons in the conduction band, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗
DOE OSTI2024

Silicon implantation and annealing in β -Ga 2 O 3 : Role of ambient, temperature, and time

Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts and selective area doping. Here we report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga 2 O 3 at concentrations from 5 × 10 18 to 1 × 10 20 cm −3 , demonstrating full activation (>80% activation, mobilities >70 cm 2 /V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga 2 O 3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 10 18 , 5 × 10 19, and 1 × 10 20 cm −3 . Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga 2 O 3 stability, p O2 must be greater than 10 −9 bar. Anneals up to p O2 = 1 bar achieve full activation at 5 × 10 18 cm −3, while 5 × 10 19 cm −3 must be annealed with p O2 ≤ 10 −4 bar, and 1 × 10 20 cm −3 requires p O2 < 10 −6 bar. Water vapor prevents activation and must be maintained below 10 −8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 10 19 cm −3 and occurs rapidly at 1 × 10 20 cm −3 . Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga 2 O 3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
DOE OSTI2024

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

For this work, we have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy reveals a notably higher Si concentration of 7.0% ± 2.3% in zinc blende (ZB) NWs than 2.3% ± 1.2% in wurtzite (WZ) NWs. Meanwhile, density functional theory calculations show that incorporation of 8 at. % Si on the Ga sublattice inverts the difference in formation energies between WZ and ZB GaN, such that the ZB polytype of GaN is stabilized. This identification of Si and other ZB polytype stabilizers will enable the development of polytype heterostructures in a wide variety of WZ-preferring compounds.

77 NANOSCIENCE AND NANOTECHNOLOGY↗