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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Silicon sheet surface studies

Results of the program are presented on developing an understanding of the basic mechanisms of abrasion and wear of silicon and on the nondestructive measurement of residual stresses in sheet silicon. Experiments were conducted at various temperatures and in the presence of various fluids. In abrasive wear, it was shown that dislocations, microtwins, and cracks are generated beneath the contact surface. Residual stresses in ribbon by the edge defined film growth process were measured by use of a shadow moire interferometry technique.

Danyluk, S.↗
NASA NTRS1986

Lithium counterdoped silicon solar cell

The resistance to radiation damage of an n(+)p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type. The lithium is introduced into the solar cell wafer by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375 C for two hours.

Weinberg, I.↗
NASA NTRS1985

Properties of silicon suspensions and slip-cast bodies

The effect of varying pH, sonication times, and solid loading of silicon powder suspensions on the properties of powder/water suspensions and on the resulting pore characteristics of slip-cast bodies was studied. Aqueous suspensions of ground an aged silicon powder (of 0.3 micron median Stokes diameter and containing 1.3 vol pct Fe2O3 powder) were prepared, with solids loading in the range of 30-56 vol pct, and were adjusted to varying pH values by addition of either HCl or NH4OH or NaOH. Suspension aliquots were sonicated for 0, 15, 30, or 60 min. Suspensions were characterized by zeta potentials, ionic strength, and viscosity. Pore characteristics of cast bodies were determined by mercury porosimetry. It was found that intermediate pH values (pH 7-9), long sonication (60 min), and high solid loadings (56 vol pct) produced samples with highest green densities and smallest median pore radius.

Sacks, M. D.↗
NASA NTRS1986

Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Daryabeigi, K.↗
NASA NTRS1985

Processing study of injection molding of silicon nitride for engine applications

The high hardness of silicon nitride, which is currently under consideration as a structural material for such hot engine components as turbine blades, renders machining of the material prohibitively costly; the near net shape forming technique of injection molding is accordingly favored as a means for component fabrication. Attention is presently given to the relationships between injection molding processing parameters and the resulting microstructural and mechanical properties of the resulting engine parts. An experimental program has been conducted under NASA sponsorship which tests the quality of injection molded bars of silicon nitride at various stages of processing.

Rorabaugh, M. E.↗
NASA NTRS1986

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗
NASA NTRS1986

Fatigue behavior of continuous-fiber silicon carbide/aluminum composites

Four lay-ups of continuous fiber silicon carbide (SCS2) fiber/aluminum matrix composites were tested to assess fatigue mechanisms including stiffness loss when cycled below their respective fatigue limits. The lay-ups were 0 (sub 8), 0(sub 2)/ + or - 45 (sub 2s), 0/90 (sub 2s), and 0/ + or - 45/90 (subs). The data were compared with predictions from the author's previously published shakedown model which predicts fatigue-induced stiffness loss in metal matrix composites. A fifth lay-up, + or - 45 (sub 2s), was tested to compare shakedown and fatigue limits. The particular batch of silicon-carbide fibers tested in this program had a somewhat lower modulus (340 GPa) than expected and displayed poor bonding to the aluminum matrix. Good agreement was obtained between the stiffness loss model and the test data. The fatigue damage below the fatigue limit was primarily in the form of matrix cracking. The fatigue limit corresponded to the laminate shakedown for the + or - 45 (sub 2s) laminate.

Johnson, W. S.↗
NASA NTRS1986

Impurity effects in silicon for high efficiency solar cells

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Hopkins, R. H.↗
NASA NTRS1987

Preventing Cracks in Silicon-Reactor Liners

Correct placement helps prevent contamination while eliminating crack-causing deposits. Repositioning quartz liner in silicon fluidized-bed reactor prevents cracking of liner when cools. Liner protects stainless-steel walls of reactor from abrasion by particles in fluidized bed. Prevents contamination of newly formed silicon by material abraded from wall and ensures high-quality product.

Lutwack, R.↗
NASA NTRS1987

New Polymeric Precursors of Silicon Carbide

Silicon carbide made by pyrolizing polymers. Method conceived for preparation of poly(decamethylcyclohexasilanes) as precursors for preparation of silicon carbide at high yield. Technical potential of polysilanes as precursors of SiC ceramics being explored. Potential limited by intractability of some polysilanes; formation of small, cyclic polycarbosilane fragments during pyrolysis; and overall low char yield and large shrinkage in conversion to ceramics.

Litt, M.↗
NASA NTRS1987

Improving Solar Cells With Polycrystalline Silicon

In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

Rohatgi, Ajeet↗
NASA NTRS1987

Making a Silicon-Nitride/Silicon-Carbide Composite

Hot pressing and nitriding produce strong fiber/matrix material. Fabrication method developed for processing strong and tough silicon-based ceramic composite material, SiC/RBSN, which consists of reaction-bonded Si3N4 (RBSN) reinforced by continuous-length, high-modulus, high strength silicon carbide (SiC) fibers prepared by chemical-vapor deposition method. Increased toughness and ultimate strength of SiC/RBSN composite makes it potential structural material for advanced heat engines.

Bhatt, R. T.↗
NASA NTRS1986

A review of high-efficiency silicon solar cells

Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

Rohatgi, A.↗
NASA NTRS1986

Analysis of silicon stress/strain relationships

Results are presented for work on stress-strain relationships in silicon ribbon. Calculations of stress fields, dislocation desities, and buckling were made; uniaxial tensile tests were made on silicon at 1150 C; and dislocation motion studies were performed.

Dillon, O.↗
NASA NTRS1986

Silicon stress/strain activities at JPL

In-house Jet Propulsion Laboratory (JPL) work is described for silicon stress/strain, including the study of fracture mechanics, and on the high-temperature test program in which the low-strain response of silicon sheet materials above 1000 C is being measured and high temperature material property data are being determined.

Chen, C. P.↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1986

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.↗