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Results for “SILICON OXIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Evaluation of metallized paint coatings for composite spacecraft structures

The extreme temperature excursions of composite spacecraft structures in LEO must be minimized through the use of thermal-control coatings. Attention is presently given to tests of silicone resin coatings which were pigmented with either leafing aluminum or combinations of leafing aluminum with silicate-treated zinc oxide pigment. Atomic oxygen, UV/vacuum, and outgassing screening tests were conducted on several such coating formulations in order to characterize the performance characteristics of this coating concept. Performance was found to depend on pigment volume concentration.

Brzuskiewicz, John E.↗
NASA NTRS1998

Method for Waterproofing Ceramic Materials

Hygroscopic ceramic materials which are difficult to waterproof with a silane, substituted silane or silazane waterproofing agent, such as an alumina containing fibrous, flexible and porous, fibrous ceramic insulation used on a reentry space vehicle, are rendered easy to waterproof if the interior porous surface of the ceramic is first coated with a thin coating of silica. The silica coating is achieved by coating the interior surface of the ceramic with a silica precursor converting the precursor to silica either in-situ or by oxidative pyrolysis and then applying the waterproofing agent to the silica coated ceramic. The silica precursor comprises almost any suitable silicon containing material such as a silane, silicone, siloxane, silazane and the like applied by solution, vapor deposition and the like. If the waterproofing is removed by e.g., burning, the silica remains and the ceramic is easily rewaterproofed. An alumina containing TABI insulation which absorbs more that five times its weight of water, absorbs less than 10 wt. % water after being waterproofed according to the method of the invention.

Cagliostro, Domenick E.↗
NASA NTRS1989

Photosensor with enhanced quantum efficiency

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Janesick, James R.↗
NASA NTRS1977

Improved performance of silicon nitride-based high temperature ceramics

Results are presented regarding experiments intended for improving the strength and toughness of hot-pressed Si3N4 (HPSN), improving the strength and oxidation resistance of reaction-sintered Si3N4 (RSSN), and improving the strength and oxidation resistance of sinterable Si-Al-O-N compositions. It is shown that the use of ZrO2 instead of MgO as a sintering aid improved the room-temperature and high-temperature flexural strength of HPSN, in addition to enhancing the rupture strength and Charpy impact resistance. The use of crushable energy absorbing layers increased the impact resistance of HPSN. Impregnation of RSSN with solutions that oxidize to Al2O3 or ZrO2 resulted in increased bending strength at room temperature. Beta-prime Si-Al-O-N sintered to full density by means of the sintering aids CeO2, Y2O3, and ZrO2 yielded the greatest strength with Y2O3 and the greatest oxidation resistance with ZrO2.

Ashbrook, R. L.↗
DOE OSTI2024

Impacts of Curing-Induced Phase Segregation in Silicon Nanoparticle-Based Electrodes

We report the investigation of silicon nanoparticle composite anodes for Li-ion batteries, using a combination of two nm-scale atomic force microscopy-based techniques: scanning spreading resistance microscopy for electrical conduction mapping and contact resonance and force volume for elastic modulus mapping, along with scanning electron microscopy-based energy dispersion spectroscopy, nanoindentation, and electrochemical analysis. Thermally curing the composite anode—made of polyethylene oxide-treated Si nanoparticles, carbon black, and polyimide binder—reportedly improves the anode electrochemical performance significantly. This work demonstrates phase segregation resulting from thermal curing, where alternating bands of carbon and silicon active material are observed. This electrode morphology is retained after extensive cycling, where the electrical conduction of the carbon-rich bands remains relatively unchanged, but the mechanical modulus of the bands decreases distinctly. These electrical and mechanical factors may contribute to performance improvement, with carbon bands serving as a mechanical buffer for Si deformation and providing electrical conduction pathways. This work motivates future efforts to engineer similar morphologies for mitigating capacity loss in silicon electrodes.

25 ENERGY STORAGE↗
DOE OSTI2022

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗
DOE OSTI2023

Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide

Anodic electrolytic etching of germanium has been performed in hydrogen peroxide etchants with controlled external conditions. In-situ current and ex-situ etch-depths were measured and tracked with respect to etchant composition and stir rates. Gas bubbles formed during the etching process were found to cause non-uniformity in etch-current and surface quality. The effects were minimized in specific composition spaces. Quantitative analysis revealed a linear correlation of the number of electrons transferred during germanium oxidation with the number of surface atoms removed. Experimental results of 2.77 electrons/atom deviate significantly from 4 electrons/atom previously reported for silicon. The conclusion is that etching mechanisms for germanium are sufficiently different from those for silicon which invalidates the direct transfer of processing techniques between the two materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1976

Development of aircraft brake materials

A program has been carried out to study and develop high temperature aircraft brake materials. A survey of the requirements of brake materials was made to select materials to meet these requirements. Based upon their physical and thermal properties, a number of materials were selected and evaluated in sliding tests which simulated aircraft braking. The mating material is 17-22 AS steel. Additives were incorporated into these materials to optimize their wear or strength behavior with particular emphasis on nickel and molybdenum base materials. Optimum materials were developed which had improved wear behavior over conventional brake materials in the simulated test. The best materials were a nickel, aluminum oxide, lead tungstate composition containing graphite and a molybdenum base material containing LPA 100 (an intermetallic compound of cobalt, molybdenum and silicon).

Ho, T.-L.↗
NASA NTRS1984

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Lieneweg, U.↗
NASA NTRS1986

Coating Circuit Boards With Silicone

Techniques appropriate to boards containing CMOS circuits detailed. Document presents procedure for applying thin conformal coating to such electronic assemblies as printed-circuit boards and wire-wrapped boards. Coating is from 1 to 7 mils (25 to 178 micrometers) thick and composed of room-temperature-vulcanizing (RTV) silicone. Specifies materials, equipment, spraying method, and quality requirements. Takes into account special needs of circuits made with complementary metal-oxide/semiconductor (CMOS) devices on circuit boards. Special attention given to preventing damage by electrostatic discharge, to which CMOS circuits especially sensitive.

Gaudiano, S.↗
NASA NTRS1991

Evaluation of bearing configurations using the single bearing tester in liquid nitrogen

Various bearing configurations were tested using the Marshall Space Flight Center single bearing tester with LN2 as the cryogenic coolant. The baseline was one Rocketdyne phase one high pressure oxidizer turbopump (HPOTP) pump end 45-mm bore bearing. The bearing configurations that were tested included a Salox/M cage configuration, a silicon nitride ball configuration, an elongated cage configuration, and a Bray 601 grease configuration.

Jett, T.↗
NASA NTRS1997

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth↗
NASA NTRS2000

Silicon-Based Ceramic-Matrix Composites for Advanced Turbine Engines: Some Degradation Issues

SiC/BN/SiC composites are designed to take advantage of the high specific strengths and moduli of non-oxide ceramics, and their excellent resistance to creep, chemical attack, and oxidation, while circumventing the brittleness inherent in ceramics. Hence, these composites have the potential to take turbine engines of the future to higher operating temperatures than is achievable with metal alloys. However, these composites remain developmental and more work needs to be done to optimize processing techniques. This paper highlights the lingering issue of pest degradation in these materials and shows that it results from vestiges of processing steps and can thus be minimized or eliminated.

Thomas-Ogbuji, Linus U. J.↗
NASA NTRS2003

Matrix Cracking in Four Different 2D SiC/SiC Composite Systems

Silicon carbide fiber reinforced, silicon carbide matrix composites are some of the most advanced composite systems for high-temperature, high-stress applications in oxidizing environments. A basic area that needs to be understood for the purpose of material behavior modeling and optimization is the architectural, constituent, and mechanistic factors that contribute to non-linear stress-strain behavior. The mechanism that causes non-linear stress-strain in dense-matrix composites is the formation and propagation of bridged matrix cracks. In addition, the occurrence and propagation of matrix cracks controls the time-dependent strength-properties of these materials in oxidizing environments at elevated temperatures. A modal acoustic emission technique has been used to monitor and estimate the stress-dependent matrix cracking. Two different SiC matrix systems, chemical vapor infiltrated (CVI) and melt-infiltrated (MI), with two different SiC fiber reinforcement, Hi-Nicalon (trademark) and Sylramic (trademark) were compared. Even though the averages of the range where matrix cracking occurred for the composites varied by more than 0.1% in strain and almost 200 MPa in stress, the range or distribution for matrix cracking could be reduced to a narrow band of stress for CVI SiC and MI SiC composites if it were assumed that all matrix cracks emanate outside of the load-bearing fiber, interphase, CVI preform minicomposite. A simple relationship was determined to describe stress-dependent matrix cracking which can then be used to estimate the onset of large, bridged matrix cracks or for material behavior models.

Morscher, Gregory N.↗
NASA NTRS2004

SiC/SiC Composites for 1200 C and Above

The successful replacement of metal alloys by ceramic matrix composites (CMC) in high-temperature engine components will require the development of constituent materials and processes that can provide CMC systems with enhanced thermal capability along with the key thermostructural properties required for long-term component service. This chapter presents information concerning processes and properties for five silicon carbide (SiC) fiber-reinforced SiC matrix composite systems recently developed by NASA that can operate under mechanical loading and oxidizing conditions for hundreds of hours at 1204, 1315, and 1427 C, temperatures well above current metal capability. This advanced capability stems in large part from specific NASA-developed processes that significantly improve the creep-rupture and environmental resistance of the SiC fiber as well as the thermal conductivity, creep resistance, and intrinsic thermal stability of the SiC matrices.

DiCarlo, J. A.↗
NASA NTRS2012

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

Chervenak, James↗