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At least 1,153 records · Page 64

Synergistically optimized electrical and thermal transport properties of SnTe via alloying high-solubility MnTe

Lead chalcogenides are the most efficient thermoelectric materials. In comparison, SnTe, a lead-free analogue of PbTe, exhibits inferior thermoelectric performance due to low Seebeck coefficient and high thermal conductivity. In this report, we show that we can synergistically optimize the electrical and thermal transport properties of SnTe via alloying Mn. Further, we report that the introduction of Mn (0–50%) induces multiple effects on the band structure and microstructure of SnTe: for the former, it can tune the Fermi level and promote the convergence of the two valence bands, concurrently enhancing the Seebeck coefficient; for the latter, it can profoundly modify the microstructure into an all-scale hierarchical architecture (including nanoscale precipitates/MnTe laminates, stacking faults, layered structure, atomic-scale point defects, etc.) to scatter phonons with a broad range of mean free paths, strongly reducing the lattice thermal conductivity. Meanwhile, most significantly, the Mn alloying enlarges the energy gap of the conduction band (C band) and the light valence band (L band), thereby suppressing the bipolar thermal conductivity by increasing the band gap. The integration of these effects yields a high ZT of 1.3 at 900 K for 17% Mn alloyed SnTe.

36 MATERIALS SCIENCE↗

Electronegative Guests in CoSb 3

Introducing guests into a host framework to form a so called inclusion compound can be used to design materials with new and fascinating functionalities. The vast majority of inclusion compounds have electropositive guests with neutral or negatively charged frameworks. Here, we show a series of electronegative guest filled skutterudites with inverse polarity. The strong covalent guest-host interactions observed for the electronegative group VIA guests, i.e., S and Se, feature a unique localized cluster vibration which significantly influences the lattice dynamics, together with the point-defect scattering caused by element substitutions, resulting in very low lattice thermal conductivity values. The findings of electronegative guests provide a new perspective for guest-filling in skutterudites, and the covalent filler/lattice interactions lead to an unusual lattice dynamics phenomenon which can be used for designing high-efficiency thermoelectric materials and novel functional inclusion compounds with open structures.

36 MATERIALS SCIENCE↗

Thickness-dependence of block copolymer coarsening kinetics

In spite of active research, many fundamental aspects of block copolymer ordering remain unresolved. We studied the thickness-dependence of block copolymer grain coarsening kinetics, and find that thinner films order more rapidly than thicker films. Bilayer films, or monolayers with partial layers of islands, order more slowly than monolayers because of the greater amount of material that must rearrange in a coordinated fashion. Sub-monolayer films order much more rapidly than monolayers, exhibiting considerably smaller activation energies, as well as larger exponents for the time-growth power-law. Furthermore, by using molecular dynamics simulations, we directly study the motion of defects in these film regimes. Here, we attribute the enhanced grain growth in sub-monolayers to the film boundaries, where defects can be spontaneously eliminated. The boundaries thus act as efficient sinks for morphological defects, pointing towards methods for engineering rapid ordering of self-assembling thin films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Large reduction of thermal conductivity leading to enhanced thermoelectric performance in p-type Mg 3 Bi 2 –YbMg 2 Bi 2 solid solutions

Intensifying the phonon scattering via point defect engineering has been demonstrated to be particularly effective in minimizing the lattice thermal conductivity for enhancing thermoelectric performance. In this work, significant phonon scattering has been realized by alloying YbMg 2 Bi 2 with Mg 3 Bi 2 . The substantial mass difference between the host atom Yb and the alloying atom Mg leads to an intense phonon scattering effect that significantly reduces the lattice thermal conductivity. The room-temperature lattice thermal conductivity decreases from ~2.7 W m -1 K -1 for YbMg 2 Bi 1.96 to ~0.8 W m -1 K -1 for Yb 0.7 Mg 0.3 Mg 2 Bi 1.96 , a reduction of ~70%. Benefiting from the greatly reduced thermal conductivity, the average ZT has been effectively improved from ~0.46 for YbMg 2 Bi 1.96 to ~0.61 for Yb 0.8 Mg 0.2 Mg 2 Bi 1.96 , an enhancement of ~33%. In addition, the predicted maximum heat-to-electricity conversion efficiency can be increased from ~7% for YbMg 2 Bi 1.96 to ~10% for Yb 0.8 Mg 0.2 Mg 2 Bi 1.96 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

GaSb doping facilitates conduction band convergence and improves thermoelectric performance in n-type PbS

P-type lead chalcogenides have superior thermoelectric performance because they exhibit the energy convergence of several valence bands. However, despite the existence of two conduction bands, there has been no report about conduction band (CB) convergence for n-type counterparts because of the large energy difference between them. Therefore, new strategies are required to manipulate the CBs if enhancing the electrical transport performance of n-type lead chalcogenides is to be achieved. PbS is a highly attractive member of the lead chalcogenides because of its high earth-abundance and low cost. Here, we report that the introduction of GaSb can successfully dope the PbS matrix with Ga and Sb atoms occupying the Pb site in its rock salt structure. GaSb doping leads to conduction band convergence and enlarged effective density of state mass for n-type PbS. This effect results in superior power factor and decreased lattice thermal conductivity caused by the soft phonon modes and point defect scattering of phonons. Consequently, a record-high average power factor PF avg of ~20.4 μW cm –1 K –2 and figure of merit ZT avg of ~0.84 in the temperature range of 400 K to 923 K were obtained, higher than any n- and p-type PbS-based thermoelectric materials.

36 MATERIALS SCIENCE↗

Effect of growth dynamics on the structural, photophysical and pseudocapacitance properties of famatinite copper antimony sulphide colloidal nanostructures (including nanosheets)

Facile phase selective synthesis of copper antimony sulphide (CAS) nanostructures is important because of their tunable photoconductive and electrochemical properties. In this study, off-stoichiometric famatinite phase CAS (fCAS) quasi-spherical and quasi-hexagonal colloidal nanostructures (including nanosheets) of sizes, 2.4–18.0 nm were grown under variable conditions of temperature (60–200 °C), time and oleylamine capping ligand concentration using copper(II) acetylacetonate and antimony(III) diethyldithiocarbamate precursors. Data from powder X-ray diffraction, Raman spectroscopy and high-resolution scanning/transmission electron microscopy confirm the tetragonal structure of the famatinite phase. X-ray photoelectron spectroscopy, transmission electron microscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy data suggest a correlation of particle size, morphology and composition of the off-stoichiometric fCAS nanostructures with growth temperature and time, and oleylamine concentration. The off-stoichiometric Cu 3-a Sb 1+b S 4±c (a, b, c – mole fractions) nanostructures being severely copper-deficient and antimony-rich, exhibit shallow-lying acceptor copper vacancy states, deep-lying donor states of antimony interstitials, sulphur vacancies and antimony-copper antisites and shallow-lying acceptor surface trapping states. Further, these electronic states are likely implicated in tunable UV-visible absorption and bandgaps between 2.3 and 2.8 eV, and broad visible-NIR photoluminescence with fast recombination of radiative lifetimes between 0.2 and 6.2 ns, confirmed from absorption, steady-state and time-resolved photoluminescence spectroscopies. Additionally, cyclic voltammetry and electrochemical impedance spectroscopy confirm that electrodes of the fCAS nanostructures display slightly variable pseudocapacitance of charge-storage primarily via possible sodium ion intercalation with a high specific capacitance of ~84 F g -1 obtained at a scan rate of 5 mV s -1 . Overall, these results show the influence of composition, in particular point defects, phase quality and morphology on the optical and pseudocapacitance properties of fCAS nanostructures, suitable as solar absorbers or electrodes for energy storage devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Epitaxially Grown Single-Crystalline SrTiO 3 Membranes Using a Solution-Processed, Amorphous SrCa 2 Al 2 O 6 Sacrificial Layer

Water-soluble sacrificial layers based on epitaxially-grown, single crystalline (Ca, Sr, Ba) 3 Al 2 O 6 layer are widely used for creating free-standing perovskite oxide membranes. However, obtaining these sacrificial layers with intricate stoichiometry remains a challenge, especially for molecular beam epitaxy (MBE). In this study, we demonstrate the hybrid MBE growth of epitaxial, single crystalline SrTiO 3 films using a solution processed, amorphous SrCa 2 Al 2 O 6 sacrificial layer onto SrTiO 3 (001) substrates. Prior to the growth, the oxygen plasma exposure was used to first create the crystalline SrCa 2 Al 2 O 6 layer with well-defined surface crystallinity. Utilizing reflection high energy electron diffraction, x-ray diffraction, and atomic force microscopy, we observe an atomic layer-by-layer growth of epitaxial, single crystalline SrTiO 3 film on the SrCa 2 Al 2 O 6 layer with atomically smooth surfaces. The SrCa 2 Al 2 O6 layer was subsequently dissolved in de-ionized water to create free-standing SrTiO3 membranes that were transferred onto a metal-coated Si wafer. Membranes created with Sr-deficiency revealed ferroelectric-like behavior measured using piezo force microscopy whereas stoichiometric films remained paraelectric-like. Furthermore, these findings underscore the viability of using ex-situ deposited amorphous SrCa2Al2O6 for epitaxial, single crystalline growth, as well as the importance of point defects in determining the ferroic properties in membranes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface magnetism in vanadium-doped MoS 2 /graphene heterostructures

Magnetism in two-dimensional materials is of great importance in discovering new physical phenomena and developing new devices at the nanoscale. In this paper, first-principles simulations are used to calculate the electronic and magnetic properties of heterostructures composed of graphene and MoS 2 considering the influence of point defects and vanadium doping. It is found that the concentration of the dopants and the types of defects can result in induced magnetic moments leading to ferromagnetically polarized systems with sharp interfaces. This provides a framework for interpreting the experimental observations of enhanced ferromagnetism in both MoS 2 /graphene and V-doped MoS 2 /graphene heterostructures. The computed electronic and spin polarizations give a microscopic understanding of the origin of ferromagnetism in these systems and illustrate how doping and defect engineering can lead to targeted property tunability. Our work has demonstrated that through defects engineering, ferromagnetism can be achieved in V-doped MoS2/graphene heterostructures, providing a potential way to induce magnetization in other TMDC/graphene materials and opening new opportunities for their applications in nano-spintronics.

36 MATERIALS SCIENCE↗

First-principles thermodynamic assessment of Sr-containing secondary phase formation in strontium-substituted lanthanum manganites for solid oxide cell applications

Sr-secondary phase formation is a potentially significant degradation mode with direct impact upon solid-oxide cell (SOC) commercial viability. A first-principles based thermodynamic study was performed for La 1−x Sr x MnO 3±δ (LSM) perovskites to assess their stability against formation of different Sr-secondary phases, including SrO, SrCrO 4 , SrSO 4 , SrCO 3 , and Sr(OH) 2 , for SOC applications. The Sr-secondary phase formation reaction free energies were determined via a thermodynamic model by combining ab initio lattice dynamics calculations for the solid phases and ab initio thermodynamic data for the gas phases. The current approach expands the previously reported thermodynamic modeling studies by integrating first-principles based point defect equilibria into the thermodynamic analysis. The modeling results obtained using this new approach indicate an increased tendency to form the SrO oxide upon decreasing the oxygen partial pressure. Additionally, the enhancing factors to form the Sr-related secondary phase from the associated SrO activity in LSM are further quantified by considering the equilibrium of SrO reacting with the contaminant gas species as a function of temperature and pressure.

defect thermodynamics modeling↗

Fabrication of nanoscale patterns in lithium fluoride crystal using a 13.5 nm Schwarzschild objective and a laser produced plasma source

Lithium fluoride (LiF) crystal is a radiation sensitive material widely used as EUV and soft x-ray detector. The LiF-based detector has high resolution, in principle limited by the point defect size, large field of view, and wide dynamic range. Using LiF crystal as an imaging detector, a resolution of 900 nm was achieved by a projection imaging of test meshes with a Schwarzschild objective operating at 13.5 nm. In addition, by imaging of a pinhole illuminated by the plasma, an EUV spot of 1.5 {mu}m diameter in the image plane of the objective was generated, which accomplished direct writing of color centers with resolution of 800 nm. In order to avoid sample damage and contamination due to the influence of huge debris flux produced by the plasma source, a spherical normal-incidence condenser was used to collect EUV radiation. Together with a description of experimental results, the development of the Schwarzschild objective, the influence of condenser on energy density and the alignment of the imaging system are also reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ultrafast switching in wetting properties of TiO{sub 2}/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation

We have demonstrated dark hydrophilicity of single crystalline rutile TiO{sub 2}(100) thin films, in which rapid switching from a hydrophobic to a hydrophilic surface was achieved using nanosecond excimer laser irradiation. The TiO{sub 2}/YSZ/Si(001) single crystalline heterostructures were grown by pulsed laser deposition and were subsequently irradiated by a single pulse of a KrF excimer laser at several energies. The wettability of water on the surfaces of the samples was evaluated. The samples were hydrophobic prior to laser annealing and turned hydrophilic after laser annealing. Superhydrophilic surfaces were obtained at higher laser energy densities (e.g., 0.32 J.cm{sup -2}). The stoichiometries of the surface regions of the samples before and after laser annealing were examined using XPS. The results revealed the formation of oxygen vacancies on the surface, which are surmised to be responsible for the observed superhydrophilic behavior. According to the AFM images, surface smoothening was greater in films that were annealed at higher laser energy densities. The samples exhibited hydrophobic behavior after being placed in ambient atmosphere. The origin of laser induced wetting behavior was qualitatively understood to stem from an increase of point defects near the surface, which lowered the film/water interfacial energy. This type of rapid hydrophobic/hydrophilic switching may be used to facilitate fabrication of electronic and photonic devices with novel properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identification of As-vacancy complexes in Zn-diffused GaAs

We have used positron annihilation spectroscopy to study the introduction of point defects in Zn-diffused semi-insulating GaAs. The diffusion was performed by annealing the samples for 2 h at 950 Degree-Sign C. The samples were etched in steps of 7 {mu}m. Both Doppler broadening using slow positron beam and lifetime spectroscopy studies were performed after each etching step. Both techniques showed the existence of vacancy-type defects in a layer of about 45 {mu}m. Secondary ion mass spectroscopy measurements illustrated the presence of Zn at high level in the sample almost up to the same depth. Vacancy-like defects as well as shallow positron traps were observed by lifetime measurements. We distinguish two kinds of defects: As vacancy belongs to defect complex, bound to most likely one Zn atom incorporated on Ga sublattice, and negative-ion-type positron traps. Zn acceptors explained the observation of shallow traps. The effect of Zn was evidenced by probing GaAs samples annealed under similar conditions but without Zn treatment. A defect-free bulk lifetime value is detected in this sample. Moreover, our positron annihilation spectroscopy measurements demonstrate that Zn diffusion in GaAs system is governed by kick-out mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies ease the adsorption of 4-chlorophenol, hydroxyl, and water molecules to the surface. Thus, n-NiO/p-NiO single crystalline catalysts can be introduced as a potent candidate to remediate the environmental pollution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanical properties of irradiated single-layer graphene

The mechanical properties of irradiated single-layer graphene sheets are determined as a function of inserted vacancy concentration. We find that the vacancy-induced crystalline-to-amorphous transition is accompanied by a brittle-to-ductile transition in the failure response of irradiated graphene sheets for inserted vacancy concentrations of 8%-12%. While point defects and larger voids appreciably degrade the strength of pristine graphene, we find that even heavily damaged samples ({approx}20% vacancies) exhibit tensile strengths of {approx}30 GPa, in significant excess of those typical of engineering materials. Our results suggest that defect engineering of graphene is feasible without incurring a complete loss of its desirable mechanical properties.

36 MATERIALS SCIENCE↗

Induced magnetic ordering in alloyed compounds based on Pauli paramagnet YCo{sub 2}

Intermetallic YCo{sub 2} compound is a Pauli exchange-enhanced paramagnet. Structural and magnetic properties melt-spun YCo{sub 2} pure and alloyed with Nb or Ti are presented. The samples crystallize in MgCu{sub 2}-type phase with lattice constant a changing from 7.223 Å for YCo{sub 2}, through 7.213 Å for Y{sub 0.9}Nb{sub 0.1}Co{sub 2} to 7.192 Å for Y{sub 0.9}Ti{sub 0.1}Co{sub 2}, where Y atoms are replaced by Nb or Ti atoms. Nanocrystalline phases can be produced by appropriate cooling rates for the solidification process. By the synthesis process free volumes, vacancies, and alloyed atoms are introduced into the YCo{sub 2} intermetallic. Ab-initio calculations have been performed to investigate the effects of substitution on the spin-split electronic band structure in the ordered YCo{sub 2}. A ferrimagnetic ground state is found in the alloyed systems with substitution on the Y-site which is energetically favorable compared to point defects on Co-sites. However, the experimentally found increased magnetic ordering in alloyed YCo{sub 2} appears to be based on microstructure effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantitative comparison between Z{sub 1∕2} center and carbon vacancy in 4H-SiC

In this study, to reveal the origin of the Z{sub 1∕2} center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z{sub 1∕2} center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z{sub 1∕2} concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V{sub C}) measured by EPR under light illumination can well be explained with the Z{sub 1∕2} concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z{sub 1∕2} center originates from a single V{sub C}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Irradiation-induced nano-voids in strained tin precipitates in silicon

We report on self-assembling of spherically shaped voids in nanometer size strained Sn precipitates after irradiation with He{sup +} ions in different conditions. It is found that high-temperature irradiation induces vacancies which are collected by compressively strained Sn precipitates enhancing of out-diffusion of Sn atoms from the precipitates. Nano-voids formation takes place simultaneously with a β- to α-phase transformation in the Sn precipitates. Post-irradiation thermal treatment leads to the removal of voids and a backward transformation of the Sn phase to β-phase. Strain-enhanced separation of point defects along with vacancy assisted Sn out-diffusion and precipitate dissolution are discussed.

36 MATERIALS SCIENCE↗