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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Layer-dependent optically induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semi-conductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for optoelectronics due to its high electron mobility, tunable direct band gap, and quantum transport. In addition to these confirmed properties, there are predictions of spin-dependent optical selection rules, suggesting the potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the g factor for InSe was extracted. Further investigations are done by calculating precession values using a k · p model, which is supported by ab initio density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. In conclusion, optical orientation of spin is an important prerequisite for optospintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1971

Optical probing of supersonic flows with statistical correlation

Remote sensing tool reliably measures statistical properties of supersonic turbulence. Tool neither affects nor is adversely affected by flow field. Device determines characteristics of supersonic flow with optical system and provides method and apparatus for separating translational and rotational motions of turbulent structures in supersonic flow.

Funk, B. H.↗
DOE OSTI2026

Plasmons Enable Ultralow Threshold Solid-State Triplet Fusion Upconversion with a 2D Sensitizer

Solid-state triplet−triplet annihilation (TTA) upconversion has significant potential for application in light harvesting, optoelectronic devices, and bioimaging. However, the high optical powers required to achieve efficient upconversion have inhibited its adoption. In this work, we demonstrate plasmon-enhanced near-infrared (NIR)-to-blue TTA upconversion in a monolayer WSe2/organic heterojunction. Under far-field excitation, the device reaches a threshold of 19 mW/cm 2 and an external quantum efficiency (EQE) of 0.17% with an anti-Stokes shift of 1.1 eV. Plasmon excitation lowers the threshold to 0.9 mW/cm 2 and improves the EQE to 3.6%. We attribute the plasmon enhancement to surface plasmon polariton (SPP) near-field enhancement and dark-exciton absorption. Optimization of the WSe 2 transfer process is identified as a key factor for the device performance. This work demonstrates that plasmon excitation overcomes the low far-field absorption of 2D transition-metal dichalcogenide (TMD) sensitizers. Consequently, monolayer TMDs can achieve solid-state upconversion with a performance among the best reported.

2D materials↗
DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗
NASA NTRS2008

Range Imaging without Moving Parts

Range-imaging instruments of a type now under development are intended to generate the equivalent of three-dimensional images from measurements of the round-trip times of flight of laser pulses along known directions. These instruments could also provide information on characteristics of targets, including roughnesses and reflectivities of surfaces and optical densities of such semi-solid objects as trees and clouds. Unlike in prior range-imaging instruments based on times of flight along known directions, there would be no moving parts; aiming of the laser beams along the known directions would not be accomplished by mechanical scanning of mirrors, prisms, or other optical components. Instead, aiming would be accomplished by using solid-state devices to switch input and output beams along different fiber-optic paths. Because of the lack of moving parts, these instruments could be extraordinarily reliable, rugged, and long-lasting. An instrument of this type would include an optical transmitter that would send out a laser pulse along a chosen direction to a target. An optical receiver coaligned with the transmitter would measure the temporally varying intensity of laser light reflected from the target to determine the distance and surface characteristics of the target. The transmitter would be a combination of devices for generating precise directional laser illumination. It would include a pulsed laser, the output of which would be coupled into a fiber-optic cable with a fan-out and solid-state optical switches that would enable switching of the laser beam onto one or more optical fibers terminated at known locations in an array on a face at the focal plane of a telescope. The array would be imaged by the telescope onto the target space. The receiver optical system could share the aforementioned telescope with the transmitter or could include a separate telescope aimed in the same direction as that of the transmitting telescope. In either case, light reflected from the target would be focused by the receiver optical system onto an array of optical fibers matching the array in the transmitter. These optical fibers would couple the received light to one or more photodetector( s). Optionally, the receiver could include solid-state optical switches for choosing which optical fiber(s) would couple light to the photodetector(s). This instrument architecture is flexible and can be optimized for a wide variety of applications and levels of performance. For example, it is scalable to any number of pixels and pixel resolutions and is compatible with a variety of ranging and photodetection methodologies, including, for example, ranging by use of modulated (including pulsed and encoded) light signals. The use of fixed arrays of optical fibers to generate controlled illumination patterns would eliminate the mechanical complexity and much of the bulk of optomechanical scanning assemblies. Furthermore, digital control of the selection of the fiber-optic pathways for the transmitted beams could afford capabilities not seen in previous three-dimensional range-imaging systems. Instruments of this type could be specialized for use as, for example, proximity detectors, three-dimensional robotic vision systems, airborne terrain-mapping systems, and inspection systems.

Blair, J. Bryan↗
DOE OSTI2023

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗
DOE OSTI2020

Mid- to long-wave infrared computational spectroscopy with a graphene metasurface modulator

In recent years there has been much interest concerning the development of modulators in the mid- to long-wave infrared, based on emerging materials such as graphene. These have been frequently pursued for optical communications, though also for other specialized applications such as infrared scene projectors. Here we investigate a new application for graphene modulators in the mid- to long-wave infrared. We demonstrate, for the first time, computational spectroscopy in the mid- to long-wave infrared using a graphene-based metasurface modulator. Furthermore, our metasurface device operates at low gate voltage. To demonstrate computational spectroscopy, we provide our algorithm with the measured reflection spectra of the modulator at different gate voltages. We also provide it with the measured reflected light power as a function of the gate voltage. The algorithm then estimates the input spectrum. We show that the reconstructed spectrum is in good agreement with that measured directly by a Fourier transform infrared spectrometer, with a normalized mean-absolute-error (NMAE) of 0.021.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Coherent photoexcitation of entangled triplet pair states

The functional properties of organic semiconductors are defined by the interplay between optically bright and dark states. Organic devices require rapid conversion between these bright and dark manifolds for maximum efficiency, and one way to achieve this is through multiexciton generation (S 1 → 1 TT). Here, the dark state 1 TT is typically generated from bright S 1 after optical excitation; however, the mechanistic details are hotly debated. Here we report a 1 TT generation pathway in which it can be coherently photoexcited, without any involvement of bright S 1 . Using <10-fs transient absorption spectroscopy and pumping sub-resonantly, 1 TT is directly generated from the ground state. Applying this method to a range of pentacene dimers and thin films of various aggregation types, we determine the critical material properties that enable this forbidden pathway. Through a strikingly simple technique, this result opens the door for new mechanistic insights into 1 TT and other dark states in organic materials.

14 SOLAR ENERGY↗
NASA NTRS1981

Optical modulators based on electrocapillarity

Electrically addressable variable-power optical elements of small (less than 1-mm) dimensions that can be used as optical modulators are described, and experimental results are presented. The devices use the curved interface between two immiscible liquids as an optical element. The electrocapillarity effect is used to change the interfacial tension and hence the curvature and power of the interface. Both the transmission and reflection systems are described.

Lea, M. C.↗
NASA NTRS2001

Borescope Imaging System Developed for Luminescent Paint Measurements

The luminescent paint measurement technique utilizes a coating that is applied to a test article, allowing the air pressure or temperature of a surface to be measured. These coatings are commonly referred to as pressure- or temperature-sensitive paints. These paints are excited with short wavelength light and emit light at a longer wavelength. By measuring the change of intensity of the emitted light from a known reference condition, researchers can determine the pressure or temperature. The technique of measuring full-field surface pressure and temperatures using luminescent coatings has required a direct line-of-sight from the camera to the surface under study. In most experiments that have used pressure-or temperature-sensitive paints, the test surfaces are mounted so it is straightforward to position the camera and excitation source. In other cases, the luxury of having optical access through a window is not available or even possible. We developed a borescope imaging system to gain optical access in these confined areas. The commercially available 10-mm-diameter rigid borescope contains relay optics to transmit the detected light to a charge-coupled device (CCD) camera as well as an internal fiber-optic light guide to provide the excitation source for the luminescent coatings. The coupled light source can be continuous for the intensity method but also can be pulsed or have a variable intensity for a newer method of acquisition that measures the decay or phase lag of the emitted light. This type of borescope focuses the image directly on the CCD chip without using a fiber-optic relay, eliminating unwanted honeycomb patterns that are typical of fiber-optic type borescopes. This produces images of much higher clarity and uniformity, which are critical for acquiring accurate measurements from the luminescent coatings.

Bencic, Timothy J.↗
NASA NTRS1992

Spatial Light Amplifier Modulators

Spatial light amplifier modulators (SLAM's) are conceptual devices that effect two-dimensional spatial modulation in optical computing and communication systems. Unlike current spatial light modulators, these provide gain. Optical processors incorporating SLAM's designed to operate in reflection or transmission mode. Each element of planar SLAM array is optical amplifier - surface-emitting diode laser. Array addressed electrically with ac modulating signals superimposed on dc bias currents supplied to lasers. SLAM device provides both desired modulation and enough optical gain to enable splitting of output signal into many optical fibers without excessive loss of power.

Eng, Sverre T.↗
NASA NTRS1975

Development of a laboratory demonstration model active cleaning device

A laboratory demonstration model of a device for removing contaminant films from optical surfaces in space was developed. The development of a plasma tube, which would produce the desired cleaning effects under high vacuum conditions, represented the major problem in the program. This plasma tube development is discussed, and the resulting laboratory demonstration-model device is described.

Shannon, R. L.↗
DOE OSTI2024

Inverse design for waveguide dispersion with a differentiable mode solver

Inverse design of optical components based on adjoint sensitivity analysis has the potential to address the most challenging photonic engineering problems. However, existing inverse design tools based on finite-difference-time-domain (FDTD) models are poorly suited for optimizing waveguide modes for adiabatic transformation or perturbative coupling, which lies at the heart of many important photonic devices. Among these, dispersion engineering of optical waveguides is especially challenging in ultrafast and nonlinear optical applications involving broad optical bandwidths and frequency-dependent anisotropic dielectric material response. In this work, we develop gradient back-propagation through a general-purpose electromagnetic eigenmode solver and use it to demonstrate waveguide dispersion optimization for second harmonic generation with maximized phase-matching bandwidth. This optimization of three design parameters converges in eight steps, reducing the computational cost of optimization by ∼100x compared to exhaustive search and identifying new designs for broadband optical frequency doubling of laser sources in the 1.3–1.4 µm wavelength range. Furthermore, we demonstrate that the computational cost of gradient back-propagation is independent of the number of parameters, as required for optimization of complex geometries. This technique enables practical inverse design for a broad range of previously intractable photonic devices.

Gray, Dodd (ORCID:000000030469599X)↗
NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗
DOE OSTI2020

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

To evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Phase control and beam steering of semiconductor laser arrays

The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.

Katz, J.↗
NASA NTRS1991

Infrared power cells for satellite power conversion

An analytical investigation is performed to assess the feasibility of long-wavelength power converters for the direct conversion of IR radiation onto electrical power. Because theses devices need to operate between 5 and 30 um the only material system possible for this application is the HgCdTe system which is currently being developed for IR detectors. Thus solar cell and IR detector theories and technologies are combined. The following subject areas are covered: electronic and optical properties of HgCdTe alloys; optimum device geometry; junction theory; model calculation for homojunction power cell efficiency; and calculation for HgCdTe power cell and power beaming.

Summers, Christopher J.↗
DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗