Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Retention of ion-implemented-xenon in olivine - Dependence on implantation dose

The diffusion of Xe in olivine, a major mineral in both meteorites and linear samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted XE retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100 percent occurred for an implanting dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with approximately more than or = 50 percent loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature. Previously announced in STAR as N83-18528

Melcher, C. L.↗
DOE OSTI2016

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

Wintucky, E. G.↗
NASA NTRS2021

Sputtering of Surfaces by Ion Irradiation: A Comparison of Molecular Dynamics and Binary Collision Approximation Models to Laboratory Measurements

We compare various sputtering simulation methods to experimental results in both the low energy (<1 keV) and high energy (≥1 keV) impact regimes for argon ions impacting a pure copper substrate at normal incidence. Our results indicate that for high energy impacts, both binary collision approximation (BCA) and molecular dynamics methods can be used to generate reasonable predictions for the yield and energy distribution of the sputtered atoms. We also find reasonable agreement between the theoretical and experimental results down to impact energies of 600 eV. However, at 200 eV impact energies, significant discrepancies appear between the experimental and theoretical ejecta energy distributions in the peak position, the width of the energy distribution, and the magnitude of the high energy tail. These discrepancies appear to arise from the experimental results being only for atoms sputtered normal to the substrate surface, whereas the theoretical results are integrated over all 2π solid angles above the surface. Using the BCA code SDTrimSP and limiting the results to only atoms emitted within ±15° of the surface normal brings theory and experiment into reasonable agreement. These results suggest that for low energy impacts, the energy distribution of sputtered atoms is highly dependent on the emission angle of the ejecta.

Solar wind↗
DOE OSTI2022

Long-range cooperative resonances in rare-earth ion arrays inside photonic resonators

Engineering arrays of active optical centers to control the interaction Hamiltonian between light and matter has been the subject of intense research recently. Collective interaction of atomic arrays with optical photons can give rise to directionally enhanced absorption or emission, which enables engineering of broadband and strong atom-photon interfaces. Here, we report on the observation of long-range cooperative resonances in an array of rare-earth ions controllably implanted into a solid-state lithium niobate micro-ring resonator. We show that cooperative effects can be observed in an ordered ion array extended far beyond the light’s wavelength. We observe enhanced emission from both cavity-induced Purcell enhancement and array-induced collective resonances at cryogenic temperatures. Engineering collective resonances as a paradigm for enhanced light-matter interactions can enable suppression of free-space spontaneous emission. The multi-functionality of lithium niobate hosting rare-earth ions can open possibilities of quantum photonic device engineering for scalable and multiplexed quantum networks.

42 ENGINEERING↗
DOE OSTI2013

Direct observation of enhanced emission sites in nitrogen implanted hybrid structured ultrananocrystalline diamond films

A hybrid-structured ultrananocrystalline diamond (h-UNCD) film, synthesized on Si-substrates by a two-step microwave plasma enhanced chemical vapour deposition (MPECVD) process, contains duplex structure with large diamond aggregates evenly dispersed in a matrix of ultra-small grains ({approx}5 nm). The two-step plasma synthesized h-UNCD films exhibit superior electron field emission (EFE) properties than the one-step MPECVD deposited UNCD films. Nitrogen-ion implantation/post-annealing processes further improve the EFE properties of these films. Current imaging tunnelling spectroscopy in scanning tunnelling spectroscopy mode directly shows increased density of emission sites in N implanted/post-annealed h-UNCD films than as-prepared one. X-ray photoelectron spectroscopy measurements show increased sp{sup 2} phase content and C-N bonding fraction in N ion implanted/post-annealed films. Transmission electron microscopic analysis reveals that the N implantation/post-annealing processes induce the formation of defects in the diamond grains, which decreases the band gap and increases the density of states within the band gap of diamond. Moreover, the formation of nanographitic phase surrounding the small diamond grains enhanced the conductivity at the diamond grain boundaries. Both of the phenomena enhance the EFE properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Ar Post-irradiations on Magnetic Properties of Cu-Implanted ZnO Single Crystals

Ar{sup +} post-irradiation effects on magnetic behavior of Cu{sup +}-implanted ZnO single crystals were studied. It was found that Cu{sup +}-implanted and Ar{sup +}-irradiated samples, even the primary sample, showed a magnetic moment (M{sub M}), but the saturation magnetization (M{sub S}) of Ar{sup +} post-irradiated on Cu{sup +} as-implanted one drastically decreased. Based on the first-principle method, it was drawn to the incomplete filling electronic configuration of the substituted Cu ion whose 3d orbital hybridized with O-2p contributing to the magnetism. The M{sub M} induced by the substituted Cu{sup +} ion was much less than that induced by the substituted Cu{sup 2+} and Cu{sup 3+} ion, so the ratio of Cu{sup 2+,3+}/Cu{sup +} decreased after Ar{sup +} post-irradiation, leading to the decrease of M{sub S}. The excessive concentration of O vacancy induced by post-irradiation also weakened the M{sub M} by their compensating electrons, and decreased the effective magnetic exchange coupling interaction. Cu-related clusters dissolution was also a critical reason for the reduction of M{sub S}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Deep levels generated by thermal oxidation in p-type 4H-SiC

Thermal oxidation is an effective method to reduce deep levels, especially the Z{sub 1/2}-center (E{sub C}-0.67 eV), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 (E{sub V}+0.79 eV) and HK2 (E{sub V}+0.98 eV) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1 Multiplication-Sign 10{sup 13} cm{sup -3} after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C{sup +}- or Si{sup +}-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C{sup +}/Si{sup +} implantation are also studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels

The properties of oxide dispersion-strengthened steels are highly dependent on the nature and size distribution of their constituting nano-oxide precipitates. A fine control of the processes of synthesis would enable the optimization of pertinent properties for use in various energy systems. This control, however, requires knowledge of the precise mechanisms of nucleation and growth of the nanoprecipitates, which are still a matter of debate. In the present study, nano-oxide precipitates were produced via the implantation of Y, Ti, and O ions in two different sequential orders in an Fe-10%Cr matrix that was subsequently thermally annealed. The results show that the oxides that precipitate are not necessarily favoured thermodynamically, but rather result from complex kinetics aspects related to the interaction between the implanted elements and induced defects. When Y is implanted first, the formation of nanoprecipitates with characteristics similar to those in conventionally produced ODS steels, especially with a core/shell structure, is evidenced. In contrast, when implantation starts with Ti, the precipitation of yttria during subsequent high-temperature annealing is totally suppressed, and corundum Cr 2 O 3 precipitates instead. Moreover, the systematic involvement of {110} matrix planes in orientation relationships with the precipitates, independently of the precipitate nature, suggests matrix restriction effects on the early stages of precipitation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Structural and photocatalytic studies on pure and Sn ion doped ZnO-graphene nanocomposites

Graphene based metal oxide nanocomposites have been widely used as a photocatalyst for the treatment of water pollutants. This work demonstrates the synthesis of graphene composite with pure and Sn ion doped-ZnO and their photocatalytic properties are reported. Structural studies were carried out by X-ray diffraction and Raman spectroscopy to confirm the formation of the nanocomposites. Microstructure was characterized by scanning electron microscopy showing rod shaped ZnO and the layer structured graphene in the ZnO-graphene composite. In comparison with the undoped ZnO-graphene composite, the Sn ion doped ZnO-graphene composite have shown better degradation of methyl orange dye that is about 99% of degradation. Band gap of the composite materials was calculated to be 3.36 eV from the UV-Vis result.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Bubble morphology in U 3 Si 2 implanted by high-energy Xe ions at 300 °C

The microstructure modifications of a high-energy Xe implanted U 3 Si 2 , a promising accident tolerant fuel candidate, were characterized and are reported upon. The U 3 Si 2 pellet was irradiated at Argonne Tandem Linac Accelerator System (ATLAS) by an 84 MeV Xe ion beam at 300 °C. The irradiated specimen was then investigated using a series of transmission electron microscopy (TEM) techniques. A dense distribution of bubbles were observed near the range of the 84 MeV Xe ions. Xe gas was also found to accumulate at multiple types of sinks, such as dislocations and grain boundaries. Bubbles aggregated at those sinks are slightly larger than intragranular bubbles in lattice. At 300 °C, the gaseous swelling strain is limited as all the bubbles are below 10 nm, implying the promising fission gas behavior of U 3 Si 2 under normal operating conditions in light water reactors (LWRs).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Solute segregation and precipitation across damage rates in dual-ion–irradiated T91 steel

We report that dual-ion irradiations using 5.0 MeV defocused Fe 2+ ions and co-injected energy degraded 2.00 to 2.85 MeV He 2+ ions were conducted on a Fe9CrMo ferritic-martensitic steel T91 to 17 dpa at a damage rate range of 5 × 10 -5 dpa/s to 3 × 10 -3 dpa/s at 445°C, followed by characterization of the microstructure using conventional and scanning transmission electron microscopy. Radiation induced Ni/Si clusters and radiation induced segregation were quantified using energy dispersive X-ray spectroscopy at each condition and were compared with the same material irradiated in the BOR-60 reactor and in the as-received condition. No significant Cr segregation was found at lath boundaries after dual-ion irradiation, while Ni and Si enrichments both decreased with increasing damage rate leading to a sharp decrease in the density of Ni/Si clusters with damage rate. Increased point defect recombination at higher ion damage rates likely reduced the Ni/Si cluster density compared with BOR-60. Although the overall vacancy concentration and diffusion are enhanced by the irradiation damage rate, the lack of time for thermal diffusion and ballistic displacements of solutes are significant limiting factors for Ni/Si cluster formation. This work demonstrates the effect of irradiation damage rate on elemental segregation and clustering when using ion irradiation to simulate reactor irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interstitial Fe in MgO

Isolated {sup 57}Fe atoms were studied in MgO single-crystals by emission Mössbauer spectroscopy following implantation of {sup 57}Mn decaying to {sup 57}Fe. Four Mössbauer spectral components were found corresponding to different Fe lattice positions and/or charge states. Two components represent Fe atoms substituting Mg as Fe{sup 2+} and Fe{sup 3+}, respectively; a third component is due to Fe in a strongly implantation-induced disturbed region. The fourth component, which is the focus of this paper, can be assigned to Fe at an interstitial site. Comparison of its measured isomer shift with ab initio calculations suggests that the interstitial Fe is located on, or close to, the face of the rock-salt MgO structure. To harmonize such an assignment with the measured near-zero quadrupole interaction a local motion process (cage motion) of the Fe has to be stipulated. The relation of such a local motion as a starting point for long range diffusion is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗