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At least 1,153 records · Page 64

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DOE OSTI2020

Nanoaperture fabrication in ultra-smooth single-grain gold films with helium ion beam lithography

In this paper, we demonstrate a simple three-step gold thin-film sample preparation process to enhance the morphology and lithographic precision using helium ion based direct-writing. The procedure includes metal deposition, heat treatment and template stripping, which produce smooth monocrystalline gold grains with sizes up to 500 nm and an average surface roughness of 0.267 nm. By using a helium ion microscope, we can fabricate structures with feature sizes less than 20 nm in a 100 nm thick gold film with high-quality sidewalls. We demonstrate the efficacy of this technique by producing high-quality double nanohole (DNH) nanoapertures for single nanoparticle trapping in a single grain of 100 nm thick gold. This procedure can be applied to a wide range of antenna geometries and features that need to be fabricated producing optical and or electronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

Fabrication and characterization of 3D printing induced orthotropic functional ceramics

The orthotropic functional properties of additively manufactured ceramics due to the fabrication process was characterized in this study. Spherical, environmentally benign barium titanate (BaTiO 3 ) powders were fabricated using binder jetting 3D printing. Dielectric and piezoelectric properties of these ceramics were characterized as a function of the printing orientation. The dielectric constant of the samples tested normal to the printing layers was observed to be 20% higher than those tested in the parallel fashion. Similarly, the piezoelectric response was found to be over 35% in the normal orientation. With these results, it was shown that the electroding orientation has a direct influence on the functional properties of additively manufactured ceramics. Overall, with less than 37% of the theoretical density, the average piezoelectric coefficient for the perpendicularly tested ceramics was found to be 152.7 pC N -1 , which is 80% of the theoretical value. Finally, the high piezoelectric response obtained with such low densities can lead to the development of more mass efficient, and cost-effective sensing and energy harvesting devices, as well as structures that can be tuned to respond based on the direction of the loads applied.

36 MATERIALS SCIENCE↗

DOE OSTI2019

High-throughput fabrication and semi-automated characterization of oxide thin film transistors

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Fabrication and performance of AC-coupled LGADs

Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit excellent timing performance. Since pads much larger than the substrate thickness are necessary to achieve a spatially uniform multiplication, a fine pad pixelation is difficult. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. At Brookhaven National Laboratory, we have designed and fabricated prototypes of AC-coupled LGAD sensors. The performance of small test structures with different particle beams from radioactive sources are shown.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Effect of layer thickness on structural, morphological and superconducting properties of Nb 3 Sn films fabricated by multilayer sequential sputtering

Superconducting Nb3Sn films can be synthesized by controlling atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films where Sn composition of deposited films can be controlled by controlling the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates with ex-situ annealing at 950 °C for 3 h. We have investigated the effect of Nb and Sn layer thickness on the properties of Nb3Sn films. The thicknesses of Nb and Sn layers were varied in two ways: (1) varied Nb:Sn thickness ratio (1:1, 2:1, 3:1, 4:1), and (2) varied layer thickness of both Nb and Sn layers, while keeping constant Nb:Sn thickness ratio of 2:1. The crystal structure, surface morphology, topography, and film composition were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS) respectively. The results showed Sn loss from the surface due to evaporation during annealing. Superconducting Nb3Sn films of critical temperature up to 17.93 K have been achieved.

Sayeed, M. N.↗

DOE OSTI2026

Effect of deposition rate on microstructure and mechanical properties of 17-4 PH stainless steel fabricated by laser engineered net shaping

Laser engineered net shaping (LENS) is an additive manufacturing technique for fabricating and repairing metallic components. However, the relationships between its process parameters and the resulting mechanical properties of alloys such as 17-4 precipitation-hardening (PH) stainless steel require further investigation to enable reliable application. This study examines the specific effect of LENS deposition rate on the microstructure and mechanical properties of 17-4 PH stainless steel. Specimens were fabricated at two different deposition rates (8.47 and 9.31 mm s−1), subjected to subsequent solution and H900 aging treatment, and then evaluated via tensile testing, hardness measurements, and microscopy. A higher deposition rate results in a finer grain structure but increased porosity, leading to greater ultimate tensile strength (∼1294 MPa) yet lower ductility (strain at failure ∼5.8%) compared to the slower deposition rate (∼1266 MPa, ∼9.0% strain). Hardness follows the same trend as tensile strength. Tensile fracture surfaces for both conditions exhibited a mixed mode of ductile dimples and brittle quasi-cleavage regions, with chromium/silicon oxide particles identified within dimples. Complementary finite element modeling indicates that small void fractions primarily reduce ductility by enhancing localized plasticity, with only a marginal decrease in tensile strength. These integrated experimental and numerical results elucidate the mechanical properties linked to deposition rate, providing insight into tailoring LENS processes to achieve desired properties of 17-4 PH stainless steel.

17-4 PH stainlesssteel↗

DOE OSTI2021

Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO 2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.

2D-materials↗

DOE OSTI2023

Impact of fabrication methods on binder distribution and charge transport in composite cathodes of all-solid-state batteries

Abstract The manufacturing process of all-solid-state batteries necessitates the use of polymer binders. However, these binders, being ionic insulators by nature, can adversely affect charge transport within composite cathodes, thereby impacting the rate performance of the batteries. In this work, we aim to investigate the impact of fabrication methods, specifically the solvent-free dry process versus the slurry-cast wet process, on binder distribution and charge transport in composite cathodes of solid-state batteries. In the dry process, the binder forms a fibrous network, while the wet process results in binder coverage on the surface of cathode active materials. The difference in microstructure leads to a notable 20-fold increase in ionic conductivity in the dry-processed cathode. Consequently, the cells processed via the dry method exhibit higher capacity retention of 89% and 83% at C/3 and C/2 rates, respectively, in comparison to 68% and 58% for the wet-processed cells at the same rate. These findings provide valuable insights into the influence of fabrication methods on binder distribution and charge transport, contributing to a better understanding of the binder’s role in manufacturing of all-solid-state batteries.

Emley, Benjamin↗

DOE OSTI2022

Novel fabrication technique for high-resolution spherical crystal analyzers using a microporous aluminium base

Modern inelastic X-ray spectrometers employ curved, bent and diced analyzers to capture sufficiently large solid angles of radially emitted scattered radiation emanating from the sample. Fabricating these intricate analyzers, especially when a high energy resolution of a few millielectronvolts is required, is very time-consuming, expensive and often a hit-or-miss affair. A novel fabrication technique is introduced, utilizing a concave-spherical, microporous aluminium base to hold an assembly of a thin glass substrate with a diced crystal wafer bonded to it. Under uniform vacuum forces, the glass substrate is drawn into the aluminium base, achieving the desired bending radius, while dicing of the diffracting crystal layer prevents bending strain from being imposed on the individual crystal pixels. This technique eliminates the need for permanently bonding the crystal assembly to the concave lens, offering the opportunity for correcting figure errors, avoiding long-term degradation of the permanent bond, and making both lens and crystal reusable. Process and material costs are thus substantially decreased. Two analyzers, Si(844) and Ge(337) with intrinsic resolutions of 14.6 meV and 36.5 meV, respectively, were produced in this fashion and characterized in resonant inelastic X-ray scattering (RIXS) measurements. The achieved overall energy resolutions for both analyzers were 29.4 meV for Si(844) and 56.6 meV for Ge(337). Although the RIXS technique is veru sensitive to analyzer imperfections, the analyzers were found to be equal, if not superior, in quality to their traditional, permanently bonded counterparts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Fabrication and characterization of a full-size ultra-precise lamellar grating for the Cosmic beamline at ALS-U

We have developed a new process for the production of ultra-precise variable line spacing (VLS) lamellar diffraction gratings through nanofabrication. The process enables the fabrication of full-size X-ray gratings with sub-nanometre accuracy in groove depth, an optimal land-to-groove ratio, and uniform groove depth across the entire grating area. We also established a method for evaluating VLS groove density variation using stitched Fizeau interferometry. The measurements confirmed the exceptionally high accuracy of the VLS groove density in the fabricated gratings, which is well within the specification tolerances while the residual groove density errors are vanishingly small. The gold-coated grating demonstrated near-theoretical diffraction efficiency across the energy range of 100–1200 eV.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Fabrication and Testing of a Stainless Steel Quartz Coaxial Cable Structure for High Temperature Measurement

This paper presents a stainless-steel quartz coaxial cable structure for distributed sensing of high temperatures. The coaxial cable sensor uses stainless steel as the inner and outer conductors and quartz as the insulator in order to achieve mechanical strength and temperature resilience. Girdle-shaped reflectors are fabricated on the quartz tubing by CNC grinding and CO 2 laser resurfacing. The sensor operates by measuring the temperature dependent change in the effective electromagnetic length between the two adjacent reflectors on the quartz tubing. A retaining collar is fabricated at the tip of the quartz tubing by 3D printing and laser resurfacing to secure the connection between the sensor and the signal cable. The prototype sensor was tested for high temperature measurements up to 600°C, and the performance characteristics of the sensor such as sensitivity, resolution uncertainty, repeatability, and stability were estimated based on the test results.

Jiao, Xinyu↗

DOE OSTI2019

A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss

We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.

42 ENGINEERING↗

DOE OSTI2012

Fabrication of Very-High-Aspect-Ratio Microstructures in Complex Patterns by Photoelectrochemical Etching

We have fabricated very-high-aspect-ratio (VHAR) silicon and metal microstructures in complex geometric patterns. The recently developed surfactant-added tetramethylammonium hydroxide etching allows the formation of V-grooves in any pattern, i.e., not limited by the crystal direction, on a silicon surface. As the resulting sharp pits allow very deep photoelectrochemical etching, VHAR silicon microstructures (4-mu m-wide and over-300-mu m-deep trenches) are successfully fabricated in complex patterns (spiral and zigzag demonstrated), overcoming the prevailing limitations of simple pores and straight trenches. Furthermore, by filling the VHAR silicon mold with nickel and removing the silicon, high-aspect-ratio metal microstructures of complex patterns are also obtained. These VHAR microstructures in complex patterns, which are structurally much stronger than the simple posts and straight plates, overcome the stiction problem even when densely populated. [2012-0042]

Sun, GY↗

DOE OSTI2016

Comparison of CIGS solar cells made with different structures and fabrication techniques

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device's respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.

14 SOLAR ENERGY↗

DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗

DOE OSTI2015

Design and Fabrication of the Superconducting Horizontal Bend Magnet for the Super High Momentum Spectrometer at Jefferson Lab

A collaboration exists between NSCL and JLab to design and build JLab's Super High Momentum Spectrometer (SHMS) horizontal bend magnet that allows the bending of the 12 GeV/c particles horizontally by 3° to allow SHMS to reach angles as low as 5.5°. Two full size coils have been wound and are cold tested for both magnetic and structural properties. Each coil is built from 90 layers of single-turn SSC outer conductor cable. An initial test coil with one third the turns was fabricated to demonstrate that the unique saddle shape with fully contoured ends could be wound with Rutherford superconducting cable. Learned lessons during the trial winding were integrated into the two complete full-scale coils that are now installed in the helium vessel. The fabrication of the iron yoke, cold mass, and thermal shield is complete, and assembly of the vacuum vessel is in progress. This paper presents the process and progress along with the modified magnet design to reduce the fringe field in the primary beam region and also includes the impact of the changes on coil forces and coil restraint system.

43 PARTICLE ACCELERATORS↗

DOE OSTI2016

Fabrication and Analysis of 150-mm-Aperture Nb 3 Sn MQXF Coils

The U.S. LHC Accelerator Research Program (LARP) and CERN are combining efforts for the HiLumi-LHC upgrade to design and fabricate 150-mm-aperture, interaction region quadrupoles with a nominal gradient of 130 T/m using Nb 3 Sn. To successfully produce the necessary long MQXF triplets, the HiLumi-LHC collaboration is systematically reducing risk and design modification by heavily relying upon the experience gained from the successful 120-mm-aperture LARP HQ program. First generation MQXF short (MQXFS) coils were predominately a scaling up of the HQ quadrupole design allowing comparable cable expansion during Nb 3 Sn formation heat treatment and increased insulation fraction for electrical robustness. A total of 13 first generation MQXFS coils were fabricated between LARP and CERN. Systematic differences in coil size, coil alignment symmetry, and coil length contraction during heat treatment are observed and likely due to slight variances in tooling and insulation/cable systems. Analysis of coil cross sections indicate that field-shaping wedges and adjacent coil turns are systematically displaced from the nominal location and the cable is expanding less than nominally designed. Lastly, a second generation MQXF coil design seeks to correct the expansion and displacement discrepancies by increasing insulation and adding adjustable shims at the coil pole and midplanes to correct allowed magnetic field harmonics.

43 PARTICLE ACCELERATORS↗

DOE OSTI2021

Fabrication and Testing of 18-mm-Period, 0.5-m-Long Nb 3 Sn Superconducting Undulator

The Advanced Photon Source at Argonne National Laboratory, in collaboration with FNAL and LBNL, is developing a Nb 3 Sn superconducting undulator with the goal of installing this device on the APS storage ring and providing APS users with the novel radiation source. A series of short, similar to ~ 8-cm-long, 18-mm-period undulator prototype magnets have been designed, fabricated, and tested. The same design was scaled to fabricate a 0.5-m-long undulator prototype. Tests of this prototype showed that the designed peak magnetic field of 1.2 T at 850 A was successfully achieved. It represents at least a 20% improvement in comparison with a NbTi SCU having the same period and magnetic gap. Test results and lessons learned from the design process are reported here.

43 PARTICLE ACCELERATORS↗