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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

The presence of defects in graphene have for a long time been recognized as a bottleneck for its utilization in electronic and mechanical devices. We recently showed that micro four-point probes may be used to evaluate if a graphene film is truly 2D or if defects in proximity of the probe will lead to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation is found between the density filling factor and the simulation yield, the fraction of cases with 1D transport and the mean sheet conductance. The upper transition limit is shown to agree with the percolation threshold for sticks. Finally, the conductance of a square sample evaluated with macroscopic edge contacts is compared to the micro four-point probe conductance measurements and we find that the micro four-point probe tends to measure a slightly higher conductance in samples containing defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Current flow and efficiencies of concentrator InGaP/GaAs/Ge solar cells at temperatures below 300K

The forward dark current density – voltage (J-V) characteristic is one of the most important characteristics of multi-junction solar cells. It indicates that the mechanisms of current flow in the space charge region of photoactive p-n junctions. If one is to idealize the optical and electrical (coupling) elements of the solar cells, it is the J-V characteristic that determines the theoretically possible efficiency of the solar cell. In this paper, using the connection between the dark J-V and photovoltaic (η-J{sub g}) efficiency – generated current density characteristics, the effect of current transport mechanisms in the space charge on the efficiency of multi-junction solar cells was investigated in the temperature range of 300 – 80 K. In the experimental J-V and η-J{sub g} curves of the multi-junction solar cells, segments corresponding to the dominant current transport mechanisms were identified. The developed method, based on the analysis of forward dark J-V characteristics, makes it possible to identify the parameters affecting the efficiency of the multi-junction solar cells in a wide range of temperatures and solar radiation concentration.

14 SOLAR ENERGY↗
DOE OSTI2014

Measurement of the target current by inductive probe during laser interaction on terawatt laser system PALS

Measurements of the return-current flowing through a solid target irradiated with the sub-nanosecond kJ-class Prague Asterix Laser System is reported. A new inductive target probe was developed which allows us measuring the target current derivative in a kA/ns range. The dependences of the target current on the laser pulse energy for cooper, graphite, and polyethylene targets are reported. The experiment shows that the target current is proportional to the deposited laser energy and is strongly affected by the shot-to-shot fluctuations. The corresponding maximum target charge exceeded a value of 10 μC. A return-current dependence of the electromagnetic pulse produced by the laser-target interaction is presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Dark current mechanism of terahertz quantum-well photodetectors

Dark current mechanisms of terahertz quantum-well photodetectors (THz QWPs) are systematically investigated experimentally and theoretically by measuring two newly designed structures combined with samples reported previously. In contrast to previous investigations, scattering-assisted tunneling dark current is found to cause significant contributions to total dark current. A criterion is also proposed to determine the major dark current mechanism at different peak response frequencies. We further determine background limited performance (BLIP) temperatures, which decrease both experimentally and theoretically as the electric field increases. This work gives good description of dark current mechanism for QWPs in the THz region and is extended to determine the transition fields and BLIP temperatures with response peaks from 3 to 12 THz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Short-circuit current density imaging of crystalline silicon solar cells via lock-in thermography: Robustness and simplifications

Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can be omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

The use of segmented cathodes to determine the spoke current density distribution in high power impulse magnetron sputtering plasmas

The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes, the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies E{sub p} < 0.8 J, spokes appear to be chaotic in nature (with random arrival times), however as E{sub p} increases, coherent spokes are observed with velocities between 6.5 and 10 km s{sup −1} and mode numbers m = 3 or above. At E{sub p} > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Physical processes in an electron current layer causing intense plasma heating and formation of x-lines

We study the evolution of an electron current layer (ECL) through its several stages by means of three-dimensional particle-in-cell (PIC) simulations with ion to electron mass ratio M/m{sub e} = 400. An ECL evolves through the following stages: (i) Electrostatic (ES) current-driven instability (CDI) soon after its formation with half width w about 2 electron skin depth (d{sub e}), (ii) current disruption in the central part of the ECL by trapping of electrons and generation of anomalous resistivity, (iii) electron tearing instability (ETI) with significantly large growth rates in the lower end of the whistler frequency range, (iv) widening of the ECL and modulation of its width by the ETI, (v) gradual heating of electrons by the CDI-driven ES ion modes create the condition that the electrons become hotter than the ions, (vi) despite the reduced electron drift associated with the current disruption by the CDI, the enhanced electron temperature continues to favor a slow growth of the ion waves reaching nonlinear amplitudes, (vii) the nonlinear ion waves undergo modulation and collapse into localized density cavities containing spiky electric fields like in double layers (DLs), (viii) such spiky electric fields are very effective in further rapid heating of both electrons and ions. As predicted by the electron magnetohydrodynamic (EMHD) theories, the ETI growth rate maximizes at wave numbers in the range 0.4 < k{sub x}W < 0.8 where k{sub x} is the wave number parallel to the ECL magnetic field and w is the evolving half width of the ECL. The developing ETI generates in-plane currents that support out-of-plane magnetic fields around the emerging x-lines. The ETI and the spiky electrostatic structures are accompanied by fluctuations in the magnetic fields near and above the lower-hybrid (ion plasma) frequency, including the whistler frequency range. We compare our results with experimental results and satellite observation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors

We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metal atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Investigation of defect-induced abnormal body current in fin field-effect-transistors

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Suppression of external quantum efficiency roll-off of nanopatterned organic-light emitting diodes at high current densities

We developed organic light-emitting diodes (OLEDs) with nanopatterned current flow regions using electron-beam lithography with the aim of suppressing singlet–polaron annihilation (SPA). Nanopatterns composed of lines and circles were used in the current flow regions of nano-line and nano-dot OLEDs, respectively. Excitons partially escape from the current flow regions where SPA takes place. As such, current densities where external quantum efficiencies were half of their initial values (J{sub 0}) increased as line width and circle diameter were decreased to close to the exciton diffusion length. Circles were more efficient at enhancing exciton escape and increasing J{sub 0} than lines. The J{sub 0} increase in the nano-dot OLEDs containing nanopatterned circles with a diameter of 50 nm was approximately 41-fold that of a conventional OLED with a current flow region of 4 mm{sup 2}. The dependence of J{sub 0} on the size and shape of the nanopatterns was well explained by an SPA model that considered exciton diffusion. Nanopatterning of OLEDs is a feasible method of obtaining large J{sub 0}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 10{sup 15} Ge cm{sup −2} and annealing between 1000 °C and 1100 °C introduced two broad electron levels E{sub C} − 0.38 eV and E{sub C} − 0.29 eV in n-type samples and a single broad hole trap E{sub V} + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Computational modeling of the effect of external electron injection into a direct-current microdischarge

Electron emission from the electrode surface plays an important role in determining the structure of a direct-current microdischarge. Here we have developed a computational model of a direct-current microdischarge to study the effect of external electron injection from the cathode surface into the discharge to manipulate its properties. The model provides a self-consistent, multi-species, multi-temperature fluid representation of the plasma. A microdischarge with a metal-insulator-metal configuration is chosen for this study. The effect of external electron injection on the structure and properties of the microdischarge is described. The transient behavior of the microdischarge during the electron injection is examined. The nonlinearities in the dynamics of the plasma result in a large increase of conduction current after active electron injection. For the conditions simulated a switching time of ∼100 ns from a low-current to high-current discharge state is realized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Measurement of toroidal vessel eddy current during plasma disruption on J-TEXT

In this paper, we have employed a thin, printed circuit board eddy current array in order to determine the radial distribution of the azimuthal component of the eddy current density at the surface of a steel plate. The eddy current in the steel plate can be calculated by analytical methods under the simplifying assumptions that the steel plate is infinitely large and the exciting current is of uniform distribution. The measurement on the steel plate shows that this method has high spatial resolution. Then, we extended this methodology to a toroidal geometry with the objective of determining the poloidal distribution of the toroidal component of the eddy current density associated with plasma disruption in a fusion reactor called J-TEXT. The preliminary measured result is consistent with the analysis and calculation results on the J-TEXT vacuum vessel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Emission current from a single micropoint of explosive emission cathode

Explosive emission cathodes (EECs) are widely used due to their large current. There has been much research on the explosive electron emission mechanism demonstrating that a current density of 10{sup 8}–10{sup 9 }A/cm{sup 2} is necessary for a micropoint to explode in several nanoseconds and the micropoint size is in micron-scale according to the observation of the cathode surface. This paper, however, makes an effort to research the current density and the micropoint size in another way which considers the space charge screening effect. Our model demonstrates that the relativistic effect is insignificant for the micropoint emission due to the small size of the micropoint and uncovers that the micron-scale size is an intrinsic demand for the micropoint to reach a space charge limited current density of 10{sup 8}–10{sup 9 }A/cm{sup 2}. Meanwhile, our analysis shows that as the voltage increases, the micropoint emission will turn from a field limited state to a space charge limited state, which makes the steady-state micropoint current density independent of the cathode work function and much less dependent on the electric field and the field enhancement factor than that predicted by the Fowler-Nordheim formula.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Time-dependent density-functional theory simulation of local currents in pristine and single-defect zigzag graphene nanoribbons

The spatial current distribution in H-terminated zigzag graphene nanoribbons (ZGNRs) under electrical bias is investigated using time-dependent density-functional theory solved on a real-space grid. A projected complex absorbing potential is used to minimize the effect of reflection at simulation cell boundary. The calculations show that the current flows mainly along the edge atoms in the hydrogen terminated pristine ZGNRs. When a vacancy is introduced to the ZGNRs, loop currents emerge at the ribbon edge due to electrons hopping between carbon atoms of the same sublattice. The loop currents hinder the flow of the edge current, explaining the poor electric conductance observed in recent experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Temperature Sensitivity Study of Eddy Current and Digital Gauge Probes for Nuclear Fuel Rod Oxide Measurement

Temperature Sensitivity Study of Eddy Current and Digital Gauge Probes for Nuclear Fuel Rod Oxide Measurement Faith R. Beck, Department of Mechanical Engineering, Penn State University, State College, PA R. Paul Lind and James A. Smith, Idaho National Laboratory, Idaho Falls, ID Novel fuels are part of the nationwide effort to reduce the enrichment of Uranium for energy production. Performance of such fuels is determined by irradiating their surfaces. To test irradiated samples, the machinery must operate remotely. The plate checker used in this experiment at Idaho National Lab (INL) performs non-destructive testing on fuel rod and plate geometries with two different types of sensors: eddy current and digital thickness gauges. The sensors measure oxide growth and total sample thickness on research fuels, respectively. Sensor measurement accuracy is crucial because even 10 microns of error is significant when determining the viability of an experimental fuel. One parameter known to affect the eddy current and thickness gauge sensors is temperature. Since both sensor accuracies depend on the ambient temperature of the system, the plate checker has been characterized for these sensitivities. The eddy current probes were tested previously in a non-radioactive environment and are noted to have sensitivity to temperature. The manufacturer of the digital gauge probes has noted a rather large coefficient of thermal expansion for their linear scale. It should also be noted that the accuracy of the digital gauge probes are specified at 20°C, which is approximately 7°C cooler than the average hot-cell temperature. In this work, the effect of temperature on the eddy current and digital gauge probes is studied, and thickness measurements are given as empirical functions of temperature. Acknowledgement: This work was supported by the INL and the DOE office of NNSA (National Nuclear Safety Administration).

36 MATERIALS SCIENCE↗