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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A novel analog muliplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers.
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UHF half-duplex micro-transceiver measuring 1 cubic centimeter, weighing less than 10 grams, and operating at 40 mW on receive and 50mW, 300mW, or 3W on transmit is described. The micro-transceiver is being designed for future Mars exploration missions, but can be adapted for other proximity links. It supports transmission rates up to 256 ksps and higher in BPSK or QPSK format for data return and receives command/control instructions at up to 8 ksps. In addition to its low mass/power features, temperature compensated circuit and system design and radiation tolerance allow operation outside of large shielded enclosures, further reducing the mass and complexity of exploration vehicles.
This paper reports recent Total Ionizing Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased condition.
We provide an overview of our work where carbon-based nanostructures have been applied to two-dimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.
This is a Total Ionizing Dose (TID) test report for the Analog Devices AD9364 RF Transceiver.
We will present the first ever single-event effects testing results on a 22 nm fully-depleted silicon-on-insulator test chip. The 128 MB SRAMs were irradiated with heavy ions and the results are compared to previous technology generations.
High-voltage transistor in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip.
In this paper a method for achieving integrated power electronics is discussed. Furture spacecraft are projected to feature high levels of intergration at the system level particularly in areas not typically associated with an integrated approach.
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This paper presents the results of reliability life testing performed on commercial electronic devices that experienced non-destructive single-event latch-up (SEL) during heavy-ion testing.
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Explore the source record for details and available documents.