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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Production technology for high efficiency ion implanted solar cells

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Kirkpatrick, A. R.↗
NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗
DOE OSTI2018

A Digitally Interfaced Analog Correlation Filter System for Object Tracking Applications

This study reports a 24×57 correlation filter system for object tracking applications. While digital interfacing of the input and output data enabled a standard and flexible way of communication with pre- and post-processing digital blocks, the multiply-accumulate (MAC) operations were performed in the analog domain to save power and area. The proposed system utilizes non-volatile floating-gate memories to store filter coefficients. The chip was fabricated in a 0.13- μm CMOS process and occupies 3.23 mm 2 of silicon area. The system dissipates 388.4 μW of power at a throughput of 11.3 kVec/s, achieving an energy efficiency of 25.2 pJ/MAC. Finally, experimental results for a custom filter designed to detect vehicles are presented.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗
NASA NTRS1981

Current status of solar cell performance of unconventional silicon sheets

It is pointed out that activities in recent years directed towards reduction in the cost of silicon solar cells for terrestrial photovoltaic applications have resulted in impressive advancements in the area of silicon sheet formation from melt. The techniques used in the process of sheet formation can be divided into two general categories. All approaches in one category require subsequent ingot wavering. The various procedures of the second category produce silicon in sheet form. The performance of baseline solar cells is discussed. The baseline process included identification marking, slicing to size, and surface treatment (etch-polishing) when needed. Attention is also given to the performance of cells with process variations, and the effects of sheet quality on performance and processing.

Yoo, H. I.↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
DOE OSTI2024

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon‐hafnium oxynitride‐tetracene structure is studied and a combination of magnetic‐field‐dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band‐edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid‐gap states, which may explain observed silicon photoluminescence quenching. These results show that band‐edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

Rhee, S. S.↗
NASA NTRS1972

Silicon-germanium technology program of the Jet Propulsion Laboratory.

The outer planetary exploration missions studied by the Jet Propulsion Laboratory require silicon-germanium radioisotope thermoelectric generators (RTGs) in which the factors of safety are as low as is compatible with the reliable satisfaction of the power needs. Work on silicon germanium sublimation performed at the Jet Propulsion Laboratory is presented. Analytical modeling work on the solid-diffusion process involved in the steady-state (free) sublimation of silicon germanium is described. Analytical predictions are made of the sublimation suppression which can be achieved by using a cover gas. A series of accelerated (high-temperature) tests which were performed on simulated hardware (using four SiGe couples) to study long-term sublimation and reaction mechanisms are also discussed.

De Winter, F.↗
NASA NTRS1979

Semiconductor grade, solar silicon purification project

Experimental apparatus and procedures used in the development of a 3-step SiF2(x) polymer transport purification process are described. Both S.S.M.S. and E.S. analysis demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). Recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the goal of $10/Kg(1975 dollars). The process appears to be readily scalable to a major silicon purification facility.

Ingle, W. M.↗
DOE OSTI2017

Probing stress and fracture mechanism in encapsulated thin silicon solar cells by synchrotron X-ray microdiffraction

Thin ( < 150 µm) silicon solar cell technology is attractive due to the significant cost reduction associated with it. Consequently, fracture mechanisms in the thin silicon solar cells during soldering and lamination need to be fully understood quantitatively in order to enable photovoltaics (PV) systems implementation in both manufacturing and field operations. Synchrotron X-ray Microdiffraction (µSXRD) has proven to be a very effective means to quantitatively probe the mechanical stress which is the driving force of the fracture mechanisms (initiation, propagation, and propensity) in the thin silicon solar cells, especially when they are already encapsulated. Here in this article, we present the first ever stress examination in encapsulated thin silicon solar cells and show how nominally the same silicon solar cells encapsulated by different polymer encapsulants could have very different residual stresses after the lamination process. It is then not difficult to see how the earlier observation, as reported by Sander et al. (2013) [1], of very different fracture rates within the same silicon solar cells encapsulated by different Ethylene Vinyl Acetate (EVA) materials could come about. Finally, the complete second degree tensor components of the residual stress of the silicon solar cells after lamination process are also reported in this paper signifying the full and unique capabilities of the Synchrotron X-Ray Microdiffraction technique not only for measuring residual stress but also for measuring other potential mechanical damage within thin silicon solar cells.

14 SOLAR ENERGY↗
NASA NTRS2006

Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Orion↗
NASA NTRS1995

3D thin film microstructures for space microrobots

Micromechanisms of locomotion and a manipulator with an external skeleton like the structure of an insect are proposed. Several micro-sized models were built on silicon wafers by using polysilicon for rigid plates and polyimide for elastic joints. Due to scale effects, friction in micromechanical components is dominant as compared to the inertial forces because friction is proportional to L(exp 2) while mass is proportional to L(exp 3). Therefore, to ensure efficient motion, rotational joint that exhibits rubbing should be avoided. In this paper, paper models of a robot leg and a micro-manipulator are presented to show structures with external skeletons and elastic joints. Then the large scale implementation using plastic plates, springs, and solenoids is demonstrated. Since the assembly technique is based on paper folding, it is compatible with thin film micro-fabrication and integrated circuit (IC) planar processes. Finally, several micromechanisms were fabricated on silicon wafers to demonstrate the feasibility of building a 3D microstructure from a single planar structure that can be used for space microrobots.

Shimoyama, Isao↗
DOE OSTI2020

0D-1D Hybrid Silicon Nanocomposite as Lithium-Ion Batteries Anodes

Lithium ion batteries (LIBs) are the enabling technology for many of the societal changes that are expected to happen in the following years. Among all the challenges for which LIBs are the key, vehicle electrification is one of the most crucial. Current battery materials cannot provide the required power densities for such applications and therefore, it makes necessary to develop new materials. Silicon is one of the proposed as next generation battery materials, but still there are challenges to overcome. Poor capacity retention is one of those drawbacks, and because it is tightly related with its high capacity, it is a problem rather difficult to address with common and scalable fabrication processes. Here we show that combining 0D and 1D silicon nanostructures, high capacity and stability can be achieved even using standard electrode fabrication processes. Capacities as high as 1200 mAh/g for more than 500 cycles at high current densities (2 A/g) were achieved with the produced hybrid 0D/1D electrodes. In this research, it was shown that while 0D nanostructures provide good strain relaxation capabilities, 1D nanomaterials contribute with enhanced cohesion and conductive matrix integrity.

0D↗
NASA NTRS1981

The effects of impurities on the performance of silicon solar cells

The major factors that determine the tolerable concentrations of impurities in silicon feedstock for solar cells used in power generation are discussed in this report. It is concluded that a solar-grade silicon can be defined only for a specific manufacturing process. It is also concluded that it is the electrical effects, efficiency and resistivity, that are dominant in determining tolerable concentrations of impurities in the silicon feedstock. Crystal growth effects may become important when faster growth rates and larger crystal diameters are developed and used.

Yamakawa, K. A.↗
NASA NTRS1992

Fabrication of silicon-based shape memory alloy micro-actuators

Thin film shape memory alloy has been integrated with silicon in a new actuation mechanism for microelectromechanical systems. This paper compares nickel-titanium film with other actuators, describes recent results of chemical milling processes developed to fabricate shape memory alloy microactuators in silicon, and describes simple actuation mechanisms which have been fabricated and tested.

Johnson, A. David↗
NASA NTRS1995

Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride

Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.

Miyoshi, Kazuhisa↗
NASA NTRS1988

T55-L-712 turbine engine compressor housing refurbishment-plasma spray project

A study was conducted to assess the feasibility of reclaiming T55-L-712 turbine engine compressor housings with an 88 wt percent aluminum to 12 wt percent silicon alloy applied by a plasma spray process. Tensile strength testing was conducted on as-sprayed and thermally cycled test specimens which were plasma sprayed with 0.020 to 0.100 in. coating thicknesses. Satisfactory tensile strength values were observed in the as-sprayed tensile specimens. There was essentially no decrease in tensile strength after thermally cycling the tensile specimens. Furthermore, compressor housings were plasma sprayed and thermally cycled in a 150-hr engine test and a 200-hr actual flight test during which the turbine engine was operated at a variety of loads, speeds and torques. The plasma sprayed coating system showed no evidence of degradation or delamination from the compressor housings. As a result of these tests, a procedure was designed and developed for the application of an aluminum-silicon alloy in order to reclaim T55-L-712 turbine engine compressor housings.

Leissler, George W.↗