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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Including screening in van der Waals corrected density functional theory calculations: The case of atoms and small molecules physisorbed on graphene

The Density Functional Theory (DFT)/van der Waals-Quantum Harmonic Oscillator-Wannier function (vdW-QHO-WF) method, recently developed to include the vdW interactions in approximated DFT by combining the quantum harmonic oscillator model with the maximally localized Wannier function technique, is applied to the cases of atoms and small molecules (X=Ar, CO, H{sub 2}, H{sub 2}O) weakly interacting with benzene and with the ideal planar graphene surface. Comparison is also presented with the results obtained by other DFT vdW-corrected schemes, including PBE+D, vdW-DF, vdW-DF2, rVV10, and by the simpler Local Density Approximation (LDA) and semilocal generalized gradient approximation approaches. While for the X-benzene systems all the considered vdW-corrected schemes perform reasonably well, it turns out that an accurate description of the X-graphene interaction requires a proper treatment of many-body contributions and of short-range screening effects, as demonstrated by adopting an improved version of the DFT/vdW-QHO-WF method. We also comment on the widespread attitude of relying on LDA to get a rough description of weakly interacting systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal Al{sub x}Ga{sub 1−x}P and Al{sub x}Ga{sub 1−x}As alloys, respectively, leads to a direct transition with a gap energy of ∼2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electron screening effect in (p,n) and (p,γ) reactions

To investigate the electron screening effect we compared γ-ray and neutron yields in different metals and insulators (Mn, V and Cd – metals and MnO, VO{sub 2} and CdO – insulators) for the proton induced nuclear reactions {sup 55}Mn(p,n){sup 55}Fe, {sup 55}Mn(p,γ){sup 56}Fe, {sup 113}Cd(p,n){sup 113}In and {sup 51}V(p,γ){sup 52}Cr. We also looked for shifts in resonance energy for metallic compared to insulator targets.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2014

Screening effects in ferroelectric resistive switching of BiFeO{sub 3} thin films

We investigate ferroelectric resistive switching in BiFeO{sub 3} thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.

36 MATERIALS SCIENCE↗
DOE OSTI2014

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (C{sub i}) and substitutional (C{sub s}) atoms forming the C{sub i}C{sub s} defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of C{sub i}C{sub s} defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On one numerical scheme of the solution of a three-dimensional problem of diffraction of an electromagnetic wave on thin ideally conductive screens

In the paper, the problem of diffraction on thin ideally conductive screens is reduced to vector hypersingular integral equation with integral treated in the sense of finite Hadamard value. An numerical scheme to solve the equation is introduced. The scheme is based on piecewise approximation of unknown function. The advantage of the scheme is that integral of singular part is reduced to contour integral which can be analytically calculated so numerical calculation are significantly accelerated. Several examples of resulting numerical experiments are given in comparison with known theoretical and experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

On some numerical scheme of solving diffraction problem on open and closed screens

In the paper, the problem of diffraction on thin ideally conductive screens is reduced to vector hypersingular integral equation with integral treated in the sense of finite Hadamard value. An numerical scheme to solve the equation is introduced. The scheme is based on piecewise approximation of unknown function. The advantage of the scheme is that integral of singular part is reduced to contour integral which can be analytically calculated so numerical calculation are significantly accelerated. Several examples of resulting numerical experiments are given in comparison with known theoretical and experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Screening and sheath formation in a nonequilibrium mixed Cairns-Tsallis electron distribution

The effects of electron nonextensivity for a given nonthermality state, on Debye shielding and electrostatic sheath formation are examined. A physically meaningful Cairns-Tsallis distribution is outlined and a generalized expression for the Debye screening length λ{sub D}{sup q,α} is obtained. It is shown that an increase of the entropic index q causes λ{sub D}{sup q,α} to decrease whatever the amount of plasma nonthermality α. In addition, smaller pertinent values of q along with relatively higher values of α provide larger values of λ{sub D}{sup q,α}. The shielded electrostatic potential falls off as a function of distance more slowly as α increases, a result somewhat analogous to the dynamical shielding decrease (albeit in a different context) of a free charge as it begins to move. Moreover, smaller pertinent values of q along with relatively higher values of α are found to involve higher ion drift speed v{sub i0} for proper sheath formation. As α increases, the sheath electrostatic potential-gradient dΨ{sub s}/dξ becomes abruptly steep slowing down the energetic electrons leakage to the wall. Moreover, the sheath thickness broadens as the electron nonthermality strengthens.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Understanding the stable boron clusters: A bond model and first-principles calculations based on high-throughput screening

The unique electronic property induced diversified structure of boron (B) cluster has attracted much interest from experimentalists and theorists. B{sub 30–40} were reported to be planar fragments of triangular lattice with proper concentrations of vacancies recently. Here, we have performed high-throughput screening for possible B clusters through the first-principles calculations, including various shapes and distributions of vacancies. As a result, we have determined the structures of B{sub n} clusters with n = 30–51 and found a stable planar cluster of B{sub 49} with a double-hexagon vacancy. Considering the 8-electron rule and the electron delocalization, a concise model for the distribution of the 2c–2e and 3c–2e bonds has been proposed to explain the stability of B planar clusters, as well as the reported B cages.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Thermoelectric transport coefficients in mono-layer MoS{sub 2} and WSe{sub 2}: Role of substrate, interface phonons, plasmon, and dynamic screening

The thermoelectric transport coefficients of electrons in two recently emerged transition metal di-chalcogenides (TMD), MoS{sub 2} and WSe{sub 2}, are calculated by solving Boltzmann transport equation using Rode's iterative technique in the diffusive transport regime and the coupled current (electrical and heat) equations. Scattering from remote phonons along with the hybridization of TMD plasmon with remote phonon modes and dynamic screening under linear polarization response are investigated in TMDs sitting on a dielectric environment. The transport coefficients are obtained for a varying range of temperature and doping density for three different types of substrates—SiO{sub 2}, Al{sub 2}O{sub 3}, and HfO{sub 2}. The Seebeck co-efficient for MoS{sub 2} and WSe{sub 2} is found to be higher than 3D semiconductors even with diffusive transport. The electronic thermal conductivity is found to be low, however, the thermoelectric figure of merit is limited by the high phonon thermal conductivity. It is found that judicious selection of a dielectric environment based on temperature of operation and carrier density is crucial to optimize the thermoelectric performance of TMD materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Screening effects due to carrier doping on valley relaxation in transition metal dichalcogenide monolayers

This work theoretically investigated the mechanism of valley polarization relaxation in monolayers of transition metal dichalcogenides, focusing on the exchange interactions between electrons and holes. In particular, we elucidated the effects of screening resulting from carrier doping on valley depolarization dynamics. The results show that the valley relaxation time is highly dependent on the extent of carrier doping. In addition, a finite degree of doping is predicted to induce additional valley relaxation temperature dependence at low temperatures, an effect that is absent at zero doping. Our calculation results suggest the possibility of increasing the valley relaxation time by tuning carrier doping, which could present a means of manipulating the valley degrees of freedom.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Random phase approximation with second-order screened exchange for current-carrying atomic states

The direct random phase approximation (RPA) and RPA with second-order screened exchange (SOSEX) have been implemented with complex orbitals as a basis for treating open-shell atoms. Both RPA and RPA+SOSEX are natural implicit current density functionals because the paramagnetic current density implicitly is included through the use of complex orbitals. We confirm that inclusion of the SOSEX correction improves the total energy accuracy substantially compared to RPA, especially for smaller-Z atoms. Computational complexity makes post self-consistent-field (post-SCF) evaluation of RPA-type expressions commonplace, so orbital basis origins and properties become important. Sizable differences are found in correlation energies, total atomic energies, and ionization energies for RPA-type functionals evaluated in the post-SCF fashion with orbital sets obtained from different schemes. Reference orbitals from Kohn-Sham calculations with semi-local functionals are more suitable for RPA+SOSEX to generate accurate total energies, but reference orbitals from exact exchange (non-local) yield essentially energetically degenerate open-shell atom ground states. RPA+SOSEX correlation combined with exact exchange calculated from a hybrid reference orbital set (half the exchange calculated from exact-exchange orbitals, the other half of the exchange from orbitals optimized for the Perdew-Burke-Ernzerhof (PBE) exchange functional) gives the best overall performance. Finally, numerical results show that the RPA-like functional with SOSEX correction can be used as a practical implicit current density functional when current effects should be included.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Genarris: Random generation of molecular crystal structures and fast screening with a Harris approximation

Herein, we present Genarris, a Python package that performs configuration space screening for molecular crystals of rigid molecules by random sampling with physical constraints. For fast energy evaluations, Genarris employs a Harris approximation, whereby the total density of a molecular crystal is constructed via superposition of single molecule densities. Dispersion-inclusive density functional theory is then used for the Harris density without performing a self-consistency cycle. Genarris uses machine learning for clustering, based on a relative coordinate descriptor developed specifically for molecular crystals, which is shown to be robust in identifying packing motif similarity. In addition to random structure generation, Genarris offers three workflows based on different sequences of successive clustering and selection steps: the "Rigorous" workflow is an exhaustive exploration of the potential energy landscape, the "Energy" workflow produces a set of low energy structures, and the "Diverse" workflow produces a maximally diverse set of structures. The latter is recommended for generating initial populations for genetic algorithms. Here, the implementation of Genarris is reported and its application is demonstrated for three test cases. Published by AIP Publishing.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

On combining the conductor-like screening model and optimally tuned range-separated hybrid density functionals

Range-separated hybrid functionals whose range-separation parameter γ has been nonempirically tuned to a particular molecule have been shown to yield frontier orbital energies and other properties in very good agreement with experiments. Yet, many cases, such as organic optoelectronic devices, require the description of molecules embedded in an environment. This can be done by combining the γ-tuning procedure with polarizable continuum models in general and the very versatile conductor-like screening model in particular. There are at least two different ways of performing this combination. The partially vertical γ-tuning employs equilibrium solvation throughout. The strictly vertical γ-tuning, on the other hand, employs nonequilibrium solvation to obtain ionization energies. Here, we compare ground-state and excited-state properties of several different molecules relevant to organic optoelectronics that were obtained using both of the two different tuning procedures. While there are significant differences in the ground-state properties, we see virtually no difference in the excited-state properties. Given these conclusions, we find that both tuning procedures have to be used in conjunction for the correct description of both ground-state and excited-state properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening

Here, we investigate the effects of surface tunneling on electrostatics and transport properties of two-dimensional electron gases (2DEGs) in undoped Si/SiGe heterostructures with different 2DEG depths. By varying the gate voltage, four stages of density-mobility dependence are identified with two density saturation regimes observed, which confirms that the system transitions between equilibrium and nonequilibrium. Mobility is enhanced with an increasing density at low biases and, counterintuitively, with a decreasing density at high biases as well. The density saturation and mobility enhancement can be semiquantitatively explained by a surface tunneling model in combination with a bilayer screening theory

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Methods to accelerate high-throughput screening of atomic qubit candidates in van der Waals materials

The discovery of atom-like spin emitters associated with defects in two-dimensional (2D) wide-bandgap (WBG) semiconductors presents new opportunities for highly tunable and versatile qubits. So far, the study of such spin emitters has focused on defects in hexagonal boron nitride (hBN). However, hBN necessarily contains a high density of nuclear spins, which are expected to create a strong incoherent spin-bath that leads to poor coherence properties of spins hosted in the material. Therefore, identification of new qubit candidates in other 2DWBG materials is necessary. Given the time demands of ab initio methods, new approaches for rapid screening and calculations of identifying properties of suitable atom-like qubits are required. In this work, we present two new methods for rapid estimation of the zero-phonon line (ZPL), a key property of atomic qubits in WBG materials. First, the ZPL is calculated by exploiting Janak’s theorem. For finite changes in occupation, we provide the leading-order estimate of the correction to the ZPL obtained using Janak’s theorem, which is more rapid than the standard method (ΔSCF). Next, we demonstrate an approach to converging excited states that is faster for systems with small strain than the standard approach used in the ΔSCF method. We illustrate these methods using the case of the singly negatively charged calcium vacancy in SiS2, which we are the first to propose as a qubit candidate. This work has the potential to assist in accelerating the high-throughput search for quantum defects in materials, with applications in quantum sensing and quantum computing.

Kuate Defo, Rodrick (ORCID:0000000242788196)↗
DOE OSTI2021

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗