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At least 1,135 records · Page 63
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DOE OSTI2014

Review on recent progress of three-dimensional optical photonic crystal

Over the past two decades, the field of photonic-crystals has become one of the most influential realms of contemporary optics. In this paper, we will review two recent experimental progresses in three-dimensional photonic-crystal operating in optical wavelengths. The first is the observation of anomalous light-refraction, an acutely negative refraction, in a 3D photonic-crystal for light trapping, guiding and near-unity absorption. The second is the observation of quasi-coherent thermal emission from an all-metallic 3D photonic-crystal at elevated temperatures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Abbe's number and Cauchy's constant of iodine and selenium doped poly (methylmethacrylate) and polystyrene composites

Poly (methyl methacrylate) / Polystyrene and iodine / selenium hybrid matrixes have been prepared and characterized. Refractive index measurements were done at 390, 535, 590, 635 nm wavelengths. Abbe's number and Cauchy's constants of the iodine / selenium doped poly (methylmethacrylate) and polystyrene samples are being reported. The results also showed that the refractive index of the composite varies non-monotonically with the doping concentration at low iodine concentration or in the region of nanoparticles formation and is also dependent on thermal annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study of optical properties of asymmetric bipolar pulse DC magnetron sputtered Ta{sub 2}O{sub 5} thin film as a function of oxygen content in deposition ambient

Tantalum penta-oxide thin films have been deposited by reactive sputtering technique using asymmetric bipolar pulsed DC source at various oxygen percentage viz. 0 to 50 %. The optical properties of the films have been studied by spectroscopic ellipsometry measurements. It has been observed that compact films with low void fraction, high refractive index and band gap can be obtained by the above technique with oxygen percentage in the range of 30–40%. The films deposited with zero or very low oxygen content have high deposition rate and yield metal rich films with large voids, defects, low band gap and high refractive index. Similarly films deposited with >40% oxygen content again contain voids and defects due to the presence of large amount of gas molecules in the sputtering ambient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Comparative studies of optical and elastic properties of ZrO{sub 2} thin films prepared under normal and oblique incidence deposition geometries

Oblique angle deposited optical thin films have attracted recent researcher’s interest because of their attractive optical, micro-structural, mechanical properties and more importantly because of their great potential in achieving tunability in refractive index. These properties in turn make it important in case of designing different optical devices. In the present work, ZrO{sub 2} thin films have been deposited on fused silica substrate by electron beam evaporation technique in normal as well as oblique angle deposition configurations. Optical properties, especially refractive index of the films have been estimated by fitting the measured transmission spectra with suitable theoretical dispersion models. Atomic force microscopy has been employed to characterize morphological properties of samples. The elastic properties of both the films are estimated by Atomic Force Acoustic Microscopy, a new and highly sensitive technique for thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Nonlinear optical response of semiconductor-nanocrystals-embedded photonic band gap structure

Colloidal CdSe/ZnS core/shell nanocrystals (NCs), which were dispersed in SiO{sub 2} sol, were utilized to fabricate a SiO{sub 2}:NCs/TiO{sub 2} all-dielectric photonic band gap (PBG) structure. The third-order nonlinear refractive index (n{sub 2}) of the PBG structure was nearly triple of that of the SiO{sub 2}:NCs film due to the local field enhancement in the PBG structure. The photoinduced change in refractive index (Δn) could shift the PBG band edge, so the PBG structure would show significant transmission modification, whose transmission change was ∼17 folds of that of the SiO{sub 2}:NCs film. Under excitation of a 30 GW/cm{sup 2} femtosecond laser beam, a transmission decrease of 80% was realized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Broadband impedance-matched electromagnetic structured ferrite composite in the megahertz range

A high refractive-index structured ferrite composite is designed to experimentally demonstrate broadband impedance matching to free-space. It consists of an array of ferrite cubes that are anisotropically spaced, thereby allowing for independent control of the effective complex permeability and permittivity. Despite having a refractive index of 9.5, the array gives less than 1% reflection and over 90% transmission of normally incident radiation up to 70 MHz for one of the orthogonal linear polarisations lying in a symmetry plane of the array. This result presents a route to the design of MHz-frequency ferrite composites with bespoke electromagnetic parameters for antenna miniaturisation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Apodized structures for the integration of defect sites into photonic lattices

We introduce a versatile concept to optically induce photonic structures of local refractive index modulations as well as photonic lattices holding single defect sites. For a given structure, we develop a set of nondiffracting beams obtained by fractionalizing the corresponding spatial spectrum. By combining this set in a multiplexing procedure, we achieve an incoherent combination of all individual structures of the set resulting in a locally addressable refractive index manipulation. We exemplarily present experimental results for apodized, meaning locally confined index changes in a photorefractive crystal resembling a sixfold and a circular symmetric structure. By an additional multiplexing step, we furthermore create periodic photonic lattices featuring embedded defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

General method for simultaneous optimization of light trapping and carrier collection in an ultra-thin film organic photovoltaic cell

We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach is applied here to a ultra-thin film solar cell with a SubPc/C{sub 60} photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980 mA/cm{sup 2} for 30 nm and 45 nm SubPc/C{sub 60} heterojunction layer thicknesses, respectively. These values correspond to a power conversion efficiency enhancement of 78% for the 30 nm thick cell, but only of 32% for a 45 nm thick cell, for which the overall photocurrent is actually higher. Applied to other material systems, the general optimization method can elucidate if light trapping strategies can improve a given cell architecture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On the evolution of cured voxel in bulk photopolymerization upon focused Gaussian laser exposure

Unconstrained depth photopolymerization is emerging as a promising technique for fabrication of several polymer microstructures such as self propagating waveguides, 3D freeform structures by bulk lithography, and polymer nanoparticles by flash exposure. Experimental observations reveal governing physics beyond Beer Lambert's law and scattering effects. This paper seeks to model unconstrained depth photopolymerization using classical nonlinear Schrödinger equation coupled with transient diffusion phenomenon. The beam propagation part of the proposed model considers scattering effects induced due to spatial variation of the refractive index as a function of the beam intensity. The critical curing energy model is used to further predict profile of polymerized voxel. Profiles of photopolymerized voxel simulated using proposed model are compared with the corresponding experimental results for several cases of exposure dose and duration. The comparison shows close match leading to conclusion that the experimentally observed deviation from Beer Lambert's law is indeed due to combined effect of diffusion of photoinitiator and scattering of light because of change in the refractive index.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Absolute analytical prediction of photonic crystal guided mode resonance wavelengths

A class of photonic crystal resonant reflectors known as guided mode resonant filters are optical structures that are widely used in the field of refractive index sensing, particularly in biosensing. For the purposes of understanding and design, their behavior has traditionally been modeled numerically with methods such as rigorous coupled wave analysis. Here it is demonstrated how the absolute resonance wavelengths of such structures can be predicted by analytically modeling them as slab waveguides in which the propagation constant is determined by a phase matching condition. The model is experimentally verified to be capable of predicting the absolute resonance wavelengths to an accuracy of within 0.75 nm, as well as resonance wavelength shifts due to changes in cladding index within an accuracy of 0.45 nm across the visible wavelength regime in the case where material dispersion is taken into account. Furthermore, it is demonstrated that the model is valid beyond the limit of low grating modulation, for periodically discontinuous waveguide layers, high refractive index contrasts, and highly dispersive media.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

36 MATERIALS SCIENCE↗
DOE OSTI2014

ZnO-PVA nanocomposite films for low threshold optical limiting applications

Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages (<1.2 wt%) of ZnO in PVA (∼0.625×10{sup −3}M to 7×10{sup −3}M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |χ{sup (3)}|, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Near-surface density profiling of Fe ion irradiated Si (100) using extremely asymmetric x-ray diffraction by variation of the wavelength

In this work, we report on correlations between surface density variations and ion parameters during ion beam-induced surface patterning process. The near-surface density variations of irradiated Si(100) surfaces were investigated after off-normal irradiation with 5 keV Fe ions at different fluences. In order to reduce the x-ray probing depth to a thickness below 5 nm, the extremely asymmetrical x-ray diffraction by variation of wavelength was applied, exploiting x-ray refraction at the air-sample interface. Depth profiling was achieved by measuring x-ray rocking curves as function of varying wavelengths providing incidence angles down to 0°. The density variation was extracted from the deviations from kinematical Bragg angle at grazing incidence angles due to refraction of the x-ray beam at the air-sample interface. The simulations based on the dynamical theory of x-ray diffraction revealed that while a net near-surface density decreases with increasing ion fluence which is accompanied by surface patterning, there is a certain threshold of ion fluence to surface density modulation. Our finding suggests that the surface density variation can be relevant with the mechanism of pattern formation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Large femtosecond third-order optical nonlinearity of Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} ferroelectric thin films

Both the linear and nonlinear optical properties of Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} (BNT{sub 0.85}) ferroelectric thin films deposited on quartz substrates were investigated. The fundamental optical constants were determined as a function of light wavelength by optical transmittance measurements. By performing single-beam Z-scan experiments with femtosecond laser pulses at a wavelength of 800 nm, the two-photon absorption (TPA) coefficient β and third-order nonlinear refraction index γ were measured to be 1.15 × 10{sup 2 }cm/GW and −8.15 × 10{sup −3} cm{sup 2}/GW, respectively. The large TPA is attributed to an indirect transition process via the intermediate energy levels and the large refractive nonlinearity is the result of the electronic polarization and ferroelectric polarization arisen from the femtosecond midinfrared radiation. The results indicate that the BNT{sub 0.85} thin film is a promising candidate for applications in nonlinear photonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry

Spectroscopic ellipsometry was used to characterize the complex refractive index of chemical-vapor-deposited monolayer transition metal dichalcogenides (TMDs). The extraordinary large value of the refractive index in the visible frequency range is obtained. The absorption response shows a strong correlation between the magnitude of the exciton binding energy and band gap energy. Together with the observed giant spin-orbit splitting, these findings advance the fundamental understanding of their novel electronic structures and the development of monolayer TMDs-based optoelectronic and spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Reversed rainbow with a nonlocal metamaterial

One of the intriguing potentials of metamaterials is the possibility to realize a nonlocal electromagnetic reaction, such that the effective medium response at a given point is fundamentally entangled with the macroscopic field distribution at long distances. Here, it is experimentally and numerically verified that a microwave nonlocal metamaterial formed by crossed metallic wires enables a low-loss broadband anomalous material response such that the refractive index decreases with frequency. Notably, it is shown that an electromagnetic beam refracted by our metamaterial prism creates a reversed microwave rainbow.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗